公开(公告)号：US20020190736A1

公开(公告)日：2002-12-19

申请号：US09987893

申请日：2001-11-16

申请人： Mitsubishi Denki Kabushiki Kaisha, Ryoden Semiconductor System Engineering Corporation

发明人： Hiromitsu Sugimoto ,  Tsuyoshi Kanao

IPC分类号： G01R031/02 ,  G01R031/26

CPC分类号： G01R1/07314 ,  G01R3/00

摘要： A substrate testing apparatus includes a first rail group made of a plurality of rails disposed in parallel with each other, a second rail group made of a plurality of rails disposed in parallel with each other in a direction that crosses the first rail group, a plurality of probe units disposed to cover respective intersections of the rails included in the first rail group and the rails included in the second rail group and being movable along the rails included in the first rail group and the second rail group, and corresponding interval maintaining means for keeping each rail included in the first rail group at an interval corresponding to an arrangement of locations to be measured on a substrate subjected to measurement, wherein the plurality of probe units each include a probing needle to be brought into contact with a surface of the substrate.

摘要翻译： 一种基板测试装置，包括由彼此平行设置的多个导轨构成的第一导轨组，由与沿第一导轨组交叉的方向彼此平行设置的多个导轨构成的第二导轨组，多个 设置成覆盖包括在第一轨道组中的轨道和包括在第二轨道组中的轨道的各个交叉点并且可以沿着包括在第一轨道组和第二轨道组中的轨道移动的探针单元，以及相应的间隔保持装置， 保持包括在第一轨道组中的每个轨道的间隔对应于待测量的基板上的要测量位置的间隔，其中多个探针单元各自包括与基板的表面接触的探针 。

公开(公告)号：US20020086496A1

公开(公告)日：2002-07-04

申请号：US09972147

申请日：2001-10-09

申请人： MITSUBISHI DENKI KABUSHIKI KAISHA, RYODEN SEMICONDUCTOR SYSTEM ENGINEERING CORPORATION

发明人： Hiroyuki Nagatani ,  Kouji Taniguchi

IPC分类号： H01L021/76

CPC分类号： H01L21/76235

摘要： A trench is formed by performing an anisotropic etching treatment on a silicon substrate with the use of a mask pattern including a pad oxide film, a polysilicon film, and a silicon nitride film formed on the silicon substrate, as a mask. Next, the side surface of the polysilicon film is retreated by etching so that the part of an oxide film formed on the side surface of the polysilicon film may not be hung over the part of an oxide film formed on the side surface of the pad oxide film. Next, an oxide film is formed by performing a thermal oxidation treatment on the inner wall surface of the trench including the exposed side surface of the polysilicon film. This produces a semiconductor device that prevents voids from being formed in a trench isolation structure.

摘要翻译： 通过使用包括形成在硅衬底上的衬垫氧化物膜，多晶硅膜和氮化硅膜的掩模图案作为掩模，在硅衬底上进行各向异性蚀刻处理来形成沟槽。 接下来，通过蚀刻来回退多晶硅膜的侧表面，使得形成在多晶硅膜的侧表面上的氧化膜的部分不会悬挂在形成在衬垫氧化物的侧表面上的氧化膜的部分上 电影。 接下来，通过对包括多晶硅膜的暴露侧表面的沟槽的内壁表面进行热氧化处理来形成氧化物膜。 这产生了防止在沟槽隔离结构中形成空隙的半导体器件。