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公开(公告)号:US20240363802A1
公开(公告)日:2024-10-31
申请号:US18632870
申请日:2024-04-11
申请人: NICHIA CORPORATION
发明人: Shun KITAHAMA
CPC分类号: H01L33/24 , H01L33/007
摘要: A method of manufacturing a light emitting element includes: providing a semiconductor structure including: an n-side semiconductor layer, an active layer positioned on the n-side semiconductor layer, and a p-side semiconductor layer positioned on the active layer; forming a light-transmissive conducting layer including: a first layer positioned on a portion of the upper surface of the p-side semiconductor layer, and a second layer covering the upper surface of the p-side semiconductor layer and the first layer; forming an insulation film covering the second layer; removing a portion of the insulation film in a region that overlaps the first layer in a plan view to form a first opening in the insulation film and to thereby expose the light-transmissive conducting layer from the insulation film; and forming a first conducting layer in the first opening such that the first conductive layer is electrically connected to the light-transmissive conducting layer.
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公开(公告)号:US20240363795A1
公开(公告)日:2024-10-31
申请号:US18644418
申请日:2024-04-24
申请人: NICHIA CORPORATION
发明人: Masahiko SANO
IPC分类号: H01L33/02 , G01S7/481 , G01S7/4863 , H01L33/26
CPC分类号: H01L33/025 , G01S7/4814 , G01S7/4863 , H01L33/26
摘要: A semiconductor optical element includes a first indirect transition type semiconductor portion including a first conductivity type impurity at a first concentration, a second indirect transition type semiconductor portion including the first conductivity type impurity at a second concentration, a third indirect transition type semiconductor portion including a second conductivity type impurity at a third concentration, a fourth indirect transition type semiconductor portion including the second conductivity type impurity at a fourth concentration, and a fifth indirect transition type semiconductor portion including the second conductivity type impurity at a fifth concentration, in this order. The third indirect transition type semiconductor portion and the fourth indirect transition type semiconductor portion are in contact with each other. The first concentration is higher than the second concentration. The third concentration is higher than the fourth concentration. The fifth concentration is higher than the fourth concentration.
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公开(公告)号:US12116516B2
公开(公告)日:2024-10-15
申请号:US17576221
申请日:2022-01-14
申请人: NICHIA CORPORATION
发明人: Yasuo Kato , Kazuya Matsuda
IPC分类号: H01L23/495 , C09K11/77 , H01L33/48 , H01L33/50 , H01L33/56 , H01L33/60 , H01L33/62 , H01S5/0232
CPC分类号: C09K11/7774 , H01L33/486 , H01L33/502 , H01L33/56 , H01L33/60 , H01L33/62 , H01S5/0232 , H01L2933/0033 , H01L2933/0041 , H01L2933/005 , H01L2933/0058 , H01L2933/0066
摘要: A metallic structure for an optical semiconductor device, including a base body having disposed thereon at least in part metallic layers in the following order; a nickel or nickel alloy plated layer, a gold or gold alloy plated layer, and a silver or silver alloy plated layer, wherein the silver or silver alloy plated layer has a thickness in a range of 0.001 μm or more and 0.01 μm or less.
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公开(公告)号:US12111024B2
公开(公告)日:2024-10-08
申请号:US17963904
申请日:2022-10-11
申请人: NICHIA CORPORATION
发明人: Gensui Tamura
IPC分类号: F21K9/00 , F21K9/68 , F21K9/90 , F21Y105/16
CPC分类号: F21K9/90 , F21K9/68 , F21Y2105/16
摘要: A planar light source includes a light source having a pair of electrodes on one face; a light guide member covering the light source while the electrodes are exposed from the light guide member; a wiring substrate having a wiring layer; a light reflecting sheet interposed between the light guide member and the wiring substrate and defining a pair of first through holes at positions aligned with the electrodes on a one-to-one basis; and a pair of conducting members respectively disposed in the first through holes and electrically connecting the electrodes to the wiring layer. The light reflecting sheet includes a first light reflecting sheet defining the first through holes, and a second light reflecting sheet defining a second through hole at a position overlapping the first through holes in a plan view with the light source being disposed in the second through hole in the plan view.
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公开(公告)号:US12109430B2
公开(公告)日:2024-10-08
申请号:US17243865
申请日:2021-04-29
申请人: NICHIA CORPORATION
发明人: Shinpei Kawarai , Atsushi Tsukamoto , Shota Kubota , Yasuo Fujikawa , Tomohiro Tsurumoto , Makiko Yamagishi
CPC分类号: A61N5/0616 , A61N2005/0626 , A61N2005/0652 , A61N2005/0661
摘要: A method of treating a non-human animal subject includes irradiating, one or more times, light having a peak wavelength in a range of 315-335 nm to an affected area of the animal subject.
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6.
公开(公告)号:US20240332462A1
公开(公告)日:2024-10-03
申请号:US18735999
申请日:2024-06-06
申请人: NATIONAL UNIVERSITY CORPORATION TOKAI NATIONAL HIGHER EDUCATION AND RESEARCH SYSTEM , OSAKA UNIVERSITY , NICHIA CORPORATION
发明人: Tsukasa TORIMOTO , Tatsuya KAMEYAMA , Marino KISHI , Chie MIYAMAE , Susumu KUWABATA , Taro UEMATSU , Daisuke OYAMATSU , Kenta NIKI
CPC分类号: H01L33/502 , C09K11/62 , H01L33/005 , H01L33/06 , H01L33/507
摘要: Semiconductor nanoparticles including Ag, In, Ga, and S are provided. In the semiconductor nanoparticles, a ratio of a number of Ga atoms to a total number of In and Ga atoms is 0.95 or less. The semiconductor nanoparticles emit light having an emission peak with a wavelength in a range of from 500 nm to less than 590 nm, and a half bandwidth of 70 nm or less, and have an average particle diameter of 10 nm or less.
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公开(公告)号:US12105013B2
公开(公告)日:2024-10-01
申请号:US16598641
申请日:2019-10-10
申请人: NICHIA CORPORATION
IPC分类号: C08L83/04 , C09J183/04 , C09J183/06 , G01N19/04 , G01N33/44 , H01L33/56 , C08G77/20 , C08G77/50
CPC分类号: G01N19/04 , C08L83/04 , C09J183/04 , C09J183/06 , G01N33/442 , G01N33/445 , H01L33/56 , C08G77/20 , C08G77/50 , C09J183/04 , C08K5/3477 , C08K5/5435 , C08K5/56 , C08L83/00
摘要: Provided is a curable resin composition which can be cured to form a material (cured product) that has low tack properties and resists adhesion of garbage. The present invention provides a curable resin composition comprising polysiloxane (A) having not less than 2 alkenyl groups in the molecule and polysiloxane (B) having not less than 2 hydrosilyl groups in the molecule, wherein (T+Q)/D>0.3 and M+D+T+Q=1 are satisfied regarding all silicon atoms contained therein, the amount of the hydrosilyl groups with respect to 1 mol of aliphatic carbon-carbon double bonds present therein is 0.9 to 5.0 mol, and a cured product of the curable resin composition exhibits a separation strength of not more than 0.40 N per mm2 in separation load evaluation and/or a total separation load of not more than 0.018 N·mm per mm2.
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公开(公告)号:US20240316234A1
公开(公告)日:2024-09-26
申请号:US18575261
申请日:2022-06-24
申请人: Nichia Corporation
CPC分类号: A61L2/10 , A61L2/26 , A61L9/20 , C02F1/325 , A61L2202/11 , A61L2209/12 , C02F2201/3222 , C02F2201/3226 , C02F2201/3227 , C02F2303/04
摘要: An ultraviolet light fluid treatment device that can enhance treatment effects is provided. The ultraviolet light fluid treatment device includes an inlet and an outlet of fluid; a flow channel connecting the inlet and the outlet and including a plurality of branch flow channels branching from the inlet, and a merged flow channel connected to a downstream side of each of the branch flow channels; a first light source configured to emit ultraviolet light to the merged flow channel; and a plurality of second light sources configured to emit the ultraviolet light to the plurality of respective branch flow channels.
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9.
公开(公告)号:US12100836B2
公开(公告)日:2024-09-24
申请号:US18342221
申请日:2023-06-27
申请人: Nichia Corporation
发明人: Kenichi Kobayashi , Yukiko Sano
IPC分类号: H01M4/505 , C01G53/00 , H01M4/131 , H01M4/1391 , H01M4/485 , H01M4/525 , H01M10/052 , H01M10/0525
CPC分类号: H01M4/505 , C01G53/006 , C01G53/40 , C01G53/42 , C01G53/50 , H01M4/131 , H01M4/1391 , H01M4/485 , H01M4/525 , H01M10/0525 , C01P2004/03 , C01P2004/51 , C01P2004/61 , C01P2006/40 , H01M10/052
摘要: A method of producing a positive electrode active material for a nonaqueous electrolyte secondary battery, the method includes preparing nickel-containing composite oxide particles having a ratio 1D90/1D10 of a 90% particle size 1D90 to a 10% particle size 1D10 in volume-based cumulative particle size distribution is 3 or less; mixing the composite oxide particles and a lithium compound to obtain a first mixture; subjecting the first mixture to a first heat treatment at a first temperature and a second heat treatment at a second temperature higher than the first temperature to obtain a first heat-treated product; and subjecting the first heat-treated material to a dispersion treatment.
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公开(公告)号:US12100790B2
公开(公告)日:2024-09-24
申请号:US17874787
申请日:2022-07-27
申请人: NICHIA CORPORATION
CPC分类号: H01L33/56 , G02B6/0073 , H01L21/6715 , H01L25/0753 , H01L25/13 , H01L33/62 , G02B6/0021 , G02B6/0068 , H01L2933/005
摘要: A method of manufacturing a light emitting device includes: a resin layer disposition step including disposing, on a support, a resin layer in an A-stage state; a light emitting element mounting step including mounting a light emitting element on the resin layer such that a first surface faces an upper surface of the resin layer; a load application step including applying a load to the light emitting element so as to embed the semiconductor stack structure at least partly in the resin layer while a second surface of the light emitting element is exposed from the resin layer; a first heating step including heating the resin layer at a first temperature without applying the load, to lower a viscosity of the resin layer; and a second heating step including heating the resin layer at a second temperature higher than the first temperature to harden the resin layer.
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