METHOD OF MANUFACTURING LIGHT EMITTING ELEMENT AND LIGHT EMITTING ELEMENT

    公开(公告)号:US20240363802A1

    公开(公告)日:2024-10-31

    申请号:US18632870

    申请日:2024-04-11

    发明人: Shun KITAHAMA

    IPC分类号: H01L33/24 H01L33/00

    CPC分类号: H01L33/24 H01L33/007

    摘要: A method of manufacturing a light emitting element includes: providing a semiconductor structure including: an n-side semiconductor layer, an active layer positioned on the n-side semiconductor layer, and a p-side semiconductor layer positioned on the active layer; forming a light-transmissive conducting layer including: a first layer positioned on a portion of the upper surface of the p-side semiconductor layer, and a second layer covering the upper surface of the p-side semiconductor layer and the first layer; forming an insulation film covering the second layer; removing a portion of the insulation film in a region that overlaps the first layer in a plan view to form a first opening in the insulation film and to thereby expose the light-transmissive conducting layer from the insulation film; and forming a first conducting layer in the first opening such that the first conductive layer is electrically connected to the light-transmissive conducting layer.

    SEMICONDUCTOR OPTICAL ELEMENT, MEASUREMENT DEVICE AND LIGHT SOURCE DEVICE USING SEMICONDUCTOR OPTICAL ELEMENT, AND METHOD FOR MANUFACTURING SEMICONDUCTOR OPTICAL ELEMENT

    公开(公告)号:US20240363795A1

    公开(公告)日:2024-10-31

    申请号:US18644418

    申请日:2024-04-24

    发明人: Masahiko SANO

    摘要: A semiconductor optical element includes a first indirect transition type semiconductor portion including a first conductivity type impurity at a first concentration, a second indirect transition type semiconductor portion including the first conductivity type impurity at a second concentration, a third indirect transition type semiconductor portion including a second conductivity type impurity at a third concentration, a fourth indirect transition type semiconductor portion including the second conductivity type impurity at a fourth concentration, and a fifth indirect transition type semiconductor portion including the second conductivity type impurity at a fifth concentration, in this order. The third indirect transition type semiconductor portion and the fourth indirect transition type semiconductor portion are in contact with each other. The first concentration is higher than the second concentration. The third concentration is higher than the fourth concentration. The fifth concentration is higher than the fourth concentration.

    Planar light source and the method of manufacturing the same

    公开(公告)号:US12111024B2

    公开(公告)日:2024-10-08

    申请号:US17963904

    申请日:2022-10-11

    发明人: Gensui Tamura

    CPC分类号: F21K9/90 F21K9/68 F21Y2105/16

    摘要: A planar light source includes a light source having a pair of electrodes on one face; a light guide member covering the light source while the electrodes are exposed from the light guide member; a wiring substrate having a wiring layer; a light reflecting sheet interposed between the light guide member and the wiring substrate and defining a pair of first through holes at positions aligned with the electrodes on a one-to-one basis; and a pair of conducting members respectively disposed in the first through holes and electrically connecting the electrodes to the wiring layer. The light reflecting sheet includes a first light reflecting sheet defining the first through holes, and a second light reflecting sheet defining a second through hole at a position overlapping the first through holes in a plan view with the light source being disposed in the second through hole in the plan view.