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公开(公告)号：US12100619B2
公开(公告)日：2024-09-24
申请号：US17093597
申请日：2020-11-09
发明人： Martin Hanicinec , Janet Hopkins , Oliver Ansell
IPC分类号： H01L21/78 , H01L21/3065 , H01L21/67
CPC分类号： H01L21/78 , H01L21/3065 , H01L21/67069 , H01L21/67092
摘要： A semiconductor wafer dicing process is disclosed for dicing a wafer into individual dies, each die comprising one integrated circuit. The process comprises: disposing a coating upon the wafer; removing at least a portion of the coating to expose regions of the wafer, along which the wafer is to be diced, to form a workpiece; disposing the workpiece upon a platen within a processing chamber; plasma treating the workpiece with a set of plasma treatment conditions to etch a portion of the exposed regions of the wafer to form a wafer groove which extends laterally beneath the coating to form an undercut; and plasma etching the workpiece with a set of plasma etch conditions, which are different to the plasma treatment conditions, to etch through the wafer and dice the wafer along the wafer groove.
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公开(公告)号：US20240213030A1
公开(公告)日：2024-06-27
申请号：US18375009
申请日：2023-09-29
发明人： Binte Kazemi Samira
IPC分类号： H01L21/3065 , H01J37/32 , H01L21/308 , H01L21/67
CPC分类号： H01L21/3065 , H01J37/32449 , H01L21/3081 , H01L21/67069 , H01J2237/3341
摘要： An additive-containing aluminium nitride film is plasma etched. The additive-containing aluminium nitride film contains an additive element selected from scandium (Sc), yttrium (Y) or erbium (Er). A plasma is established within the chamber to plasma etch the additive-containing aluminium nitride film exposed within the trench. A ratio of the inert diluent gas flow rate to the sum of the BCl3 and Cl2 flow rates is in the range 0.45:1 to 0.75:1 and a ratio of the BCl3 flow rate to the Cl2 flow rate is in the range 0.75:1 to 1.25:1.
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公开(公告)号：US11894254B2
公开(公告)日：2024-02-06
申请号：US16567865
申请日：2019-09-11
发明人： Nicolas Launay
IPC分类号： H01L21/683 , H01J37/32 , H01L21/67 , H01L21/3065
CPC分类号： H01L21/6833 , H01J37/32724 , H01L21/3065 , H01L21/67069 , H01L21/67103 , H01J2237/002 , H01J2237/2007 , H01J2237/334
摘要： A substrate support includes an electrostatic chuck having an upper surface, and a cover positioned on the electrostatic chuck to cover the upper surface thereof. The cover includes a first face adjacent the upper surface of the electrostatic chuck, a second face for supporting a substrate, and one or more conduits extending through the cover to permit a cooling gas to flow from the second face to the first face. The cover is made from a dielectric material.
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4.发明公开公开(公告)号：US20240014018A1
公开(公告)日：2024-01-11
申请号：US18372126
申请日：2023-09-24
发明人： Tony WILBY , Steve BURGESS , Adrian THOMAS , Rhonda HYNDMAN , Scott HAYMORE , Clive WIDDICKS , Ian MONCRIEFF
CPC分类号： H01J37/3452 , C23C14/3485 , C23C14/345 , C23C14/351 , C23C14/185 , C23C14/0641 , C23C14/542 , H01J37/3467 , H01J37/347 , H01J2237/3323
摘要： A magnet assembly is disclosed for steering ions used in the formation of a material layer upon a substrate during a pulsed DC physical vapour deposition process. Apparatus and methods are also disclosed incorporating the assembly for controlling thickness variation in a material layer formed via pulsed DC physical vapour deposition. The magnet assembly comprises a magnetic field generating arrangement for generating a magnetic field proximate the substrate and means for rotating the ion steering magnetic field generating arrangement about an axis of rotation, relative to the substrate. The magnetic field generating arrangement comprises a plurality of magnets configured to an array which extends around the axis of rotation, wherein the array of magnets are configured to generate a varying magnetic field strength along a radial direction relative to the axis of rotation.
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公开(公告)号：US11710670B2
公开(公告)日：2023-07-25
申请号：US17000243
申请日：2020-08-21
发明人： Oliver Ansell , Harry Gordon-Moys
IPC分类号： H01L21/67 , H01L21/3065 , H01J37/32 , H01L21/66 , H01J37/22
CPC分类号： H01L22/26 , H01J37/222 , H01J37/228 , H01J37/32715 , H01L21/3065 , H01L21/67069 , H01J2237/334
摘要： A white light illumination source can illuminate a region of a substrate to be plasma etched with an incident light beam. A camera takes successive images of the region being illuminated during a plasma etch process. Image processing techniques can be applied to the images so as to identify a location of at least one feature on the substrate and to measure a reflectivity signal at the location. The plasma etch process can be modified in response to the measured reflectivity signal at the location.
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公开(公告)号：US20230170188A1
公开(公告)日：2023-06-01
申请号：US17983341
申请日：2022-11-08
发明人： Alex Huw Wood , Kevin Riddell , Huma Ashraf , Janet Hopkins
IPC分类号： H01J37/32
CPC分类号： H01J37/32449 , H01J37/32816 , H01J2237/3343 , H01J2237/182 , H01J37/321
摘要： An additive-containing aluminium nitride film is plasma etched. The additive-containing aluminium nitride film contains an additive element selected from scandium, yttrium or erbium. A workpiece is placed upon a platen within a plasma chamber. The workpiece includes a substrate having an additive-containing aluminium nitride film deposited thereon and a mask disposed upon the additive-containing aluminium nitride film, which defines at least one trench. A first etching gas is introduced into the chamber with a first flow rate, a second etching gas is introduced into the chamber with a second flow rate, and a plasma is established within the chamber to etch the additive-containing aluminium nitride film exposed within the trench. The first etching gas comprises boron trichloride and the second etching gas comprises chlorine. A ratio of the first flow rate to the second flow rate is greater than or equal to 1:1.
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公开(公告)号：US20220155011A1
公开(公告)日：2022-05-19
申请号：US17510333
申请日：2021-10-25
发明人： Trevor THOMAS , Martin Ayres
摘要： A spin rinse dryer for treating a substrate has an enclosure, a rotatable support for supporting the substrate, a rotatable member located within the enclosure above the rotatable support, and a drive for rotating the rotatable member. During cleaning of the wafer, liquid that splashes up from the wafer will strike the rotatable member, rather than the upper wall of the enclosure, and may form droplets on the rotatable member. After the flow of cleaning liquid has stopped, the drive can rotate the rotatable member at high speed, which tends to throw the liquid droplets off the rotatable member through centrifugal force. The liquid then runs down the walls of the enclosure, away from the wafer, so that there is a much reduced chance of contamination of the cleaned wafer. The rotatable member and support may be integrally formed and rotated together or may be separate members.
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公开(公告)号：US10655217B2
公开(公告)日：2020-05-19
申请号：US15968433
申请日：2018-05-01
发明人： Michael Grimes , Yuyuan Lin
摘要： A method of forming a passivation layer on a substrate includes providing a substrate in a processing chamber. The substrate includes a metallic surface which is a copper, tin or silver surface, or an alloyed surface of one or more of copper, tin or silver. The method further includes depositing at least one organic layer onto the metallic surface by vapour deposition, the organic layer formed from an organic precursor. The organic precursor includes a first functional group including at least one of oxygen, nitrogen, phosphorus, sulphur, selenium, tellurium, or silicon, and a second functional group selected from hydroxyl (—OH) or carboxyl (—COOH). The first functional group is adsorbed onto the metallic surface. The method further includes depositing at least one inorganic layer onto the organic layer by vapour deposition, wherein the second functional group acts as an attachment site for the inorganic layer.
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公开(公告)号：US10153135B2
公开(公告)日：2018-12-11
申请号：US15190722
申请日：2016-06-23
发明人： Anthony Paul Wilby , Stephen R Burgess , Ian Moncrieff , Paul Densley , Clive L Widdicks , Paul Rich , Adrian Thomas
摘要： An ICP plasma etching apparatus for etching a substrate includes at least one chamber, a substrate support positioned within the chamber, a plasma production device for producing a plasma for use in etching the substrate, and a protective structure which surrounds the substrate support so that, in use, a peripheral portion of the substrate is protected from unwanted deposition of material. The protective structure is arranged to be electrically biased and is formed from a metallic material so that metallic material can be sputtered from the protective structure onto an interior surface of the chamber to adhere particulate material to the interior surface.
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公开(公告)号：US10062576B2
公开(公告)日：2018-08-28
申请号：US15588779
申请日：2017-05-08
发明人： Nicolas Launay , Maxine Varvara
IPC分类号： H01L21/3065 , H01J37/305 , H01J37/32 , H01L21/67 , H01L21/683 , H01L21/768
CPC分类号： H01L21/30655 , H01J37/3053 , H01J37/32082 , H01J37/32366 , H01J37/32403 , H01J37/32422 , H01J37/32577 , H01J2237/334 , H01L21/67069 , H01L21/6831 , H01L21/76898
摘要： A method of plasma etching one or more features in a silicon substrate includes performing a main etch using a cyclical etch process in which a deposition step and an etch step are alternately repeated, and performing an over etch to complete the plasma etching of the features. The over etch includes one or more etch steps of a first kind and one or more etch steps of a second kind, each of the etch steps of the first and second kind include etching by ion bombardment of the silicon substrate. The ion bombardment during the one or more etch steps of the second kind has an inward inclination with respect to ion bombardment during the one or more etch steps of the first kind.
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