公开(公告)号：US20120286309A1

公开(公告)日：2012-11-15

申请号：US13279782

申请日：2011-10-24

Applicant: Seung Wan Chae ,  Tae Hun Kim ,  Su Yeol Lee ,  Sung Tae Kim ,  Jong Ho Lee

Inventor： Seung Wan Chae ,  Tae Hun Kim ,  Su Yeol Lee ,  Sung Tae Kim ,  Jong Ho Lee

IPC: H01L33/46

CPC classification number: H01L33/46 ,  H01L33/20

Abstract: A semiconductor light emitting device includes: a light emitting diode unit including a light-transmissive substrate having a face sloped upwardly at a lower edge thereof. A rear reflective lamination body is formed on the lower face and the surrounding sloped face of the light-transmissive substrate. The rear reflective lamination body includes an optical auxiliary layer and a metal reflective film formed on a lower face of the optical auxiliary layer. A junction lamination body is provided to a lower face of the rear reflective lamination body. The junction lamination body including a junction metal layer made of a eutectic metal material and a diffusion barrier film.

Abstract translation: 一种半导体发光器件包括：发光二极管单元，其包括具有在其下边缘向上倾斜的面的透光基板。 背光层叠体形成在透光性基板的下表面和周边的倾斜面上。 后反光层叠体包括光辅助层和形成在光辅助层的下表面上的金属反射膜。 在后反光层叠体的下表面设置有结层叠体。 结合层叠体包括由共晶金属材料制成的结金属层和扩散阻挡膜。

公开(公告)号：US20120223326A1

公开(公告)日：2012-09-06

申请号：US13471154

申请日：2012-05-14

Applicant: Joon-seop KWAK ,  Jae-hee Cho

Inventor： Joon-seop KWAK ,  Jae-hee Cho

IPC: H01L33/40

CPC classification number: H01L33/007 ,  H01L33/0095 ,  H01L33/20 ,  H01L33/508 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/8592 ,  H01L2924/181 ,  H01L2933/0041 ,  H01L2924/00014 ,  H01L2924/00012

Abstract: A light emitting diode and a method for fabricating the same are provided. The light emitting diode includes: a transparent substrate; a semiconductor material layer formed on the top surface of a substrate with an active layer generating light; and a fluorescent layer formed on the back surface of the substrate with controlled varied thicknesses. The ratio of light whose wavelength is shifted while propagating through the fluorescent layer and the original light generated in the active layer can be controlled by adjusting the thickness of the fluorescent layer, to emit desirable homogeneous white light from the light emitting diode.

Abstract translation: 提供一种发光二极管及其制造方法。 发光二极管包括：透明基板; 半导体材料层，形成在具有产生光的有源层的基板的顶表面上; 以及在受控变化的厚度的基板的背面上形成的荧光层。 可以通过调节荧光层的厚度来控制波长在荧光层上传播而移动的光与在有源层中产生的原始光的比例，从发光二极管发出期望的均匀白光。

公开(公告)号：US20120211789A1

公开(公告)日：2012-08-23

申请号：US13402379

申请日：2012-02-22

Applicant: Won Joon LEE ,  Seong Yeon HAN ,  Yong Seok KIM ,  Jae Wook KWON ,  Sung A. CHOI ,  Myoung Soo CHOI

Inventor： Won Joon LEE ,  Seong Yeon HAN ,  Yong Seok KIM ,  Jae Wook KWON ,  Sung A. CHOI ,  Myoung Soo CHOI

IPC: H01L33/44

CPC classification number: H01L33/486 ,  H01L24/48 ,  H01L24/49 ,  H01L25/0753 ,  H01L33/62 ,  H01L33/642 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/49109 ,  H01L2224/49175 ,  H01L2924/00014 ,  H01L2924/01033 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/12035 ,  H01L2924/12041 ,  H01L2924/19107 ,  H01L2924/3025 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2224/05599

Abstract: There is provided a light emitting device package, including: a package body; a first lead frame coupled to the package body and including a first recess having an exposed side, the first recess having a chip mounting area formed to be downwardly recessed therein, wherein at least a part of a bottom surface of the chip mounting area is exposed to a bottom surface of the package body; a second lead frame coupled to the package body so as to have a predetermined distance from the first lead frame and including a second recess having an exposed side opposed to the exposed side of the first recess; and at least one light emitting device mounted on the chip mounting area of the first lead frame and electrically connected with the first and second lead frames.

Abstract translation: 提供了一种发光器件封装，包括：封装体; 第一引线框架，其耦合到所述封装主体并且包括具有暴露侧的第一凹部，所述第一凹部具有形成为向下凹入其中的芯片安装区域，其中所述芯片安装区域的底表面的至少一部分被暴露 到包装体的底面; 耦合到所述封装体的第二引线框架，以便与所述第一引线框架具有预定距离，并且包括具有与所述第一凹部的暴露侧相对的暴露侧的第二凹部; 以及安装在所述第一引线框架的所述芯片安装区域上并与所述第一引线框架和所述第二引线框架电连接的至少一个发光器件。

公开(公告)号：US20120211780A1

公开(公告)日：2012-08-23

申请号：US13404924

申请日：2012-02-24

Applicant: Suk Ho Jung ,  Hyung Kun Kim ,  Hak Hwan Kim ,  Young Jin Lee ,  Ho Sun Paek

Inventor： Suk Ho Jung ,  Hyung Kun Kim ,  Hak Hwan Kim ,  Young Jin Lee ,  Ho Sun Paek

IPC: H01L33/50

CPC classification number: H01L25/0753 ,  H01L33/486 ,  H01L33/504 ,  H01L33/508 ,  H01L2224/48091 ,  H01L2224/48235 ,  H01L2924/00014

Abstract: An LED package module according to an aspect of the invention may include: a substrate having predetermined electrodes thereon; a plurality of LED chips mounted onto the substrate, separated from each other at predetermined intervals, and electrically connected to the electrodes; a first color resin portion molded around at least one of the plurality of LED chips; a second color resin portion molded around all of the LED chips except for the LED chip around which the first color resin portion is molded, and having a different color from the first color resin portion; and a third color resin portion encompassing both the first color resin portion and the second color resin portion and having a different color from the first color resin portion and the second color resin portion.

Abstract translation: 根据本发明的一个方面的LED封装模块可以包括：其上具有预定电极的基板; 安装在基板上的多个LED芯片，以预定间隔彼此分开，并与电极电连接; 围绕所述多个LED芯片中的至少一个模制的第一颜色树脂部分; 围绕除了第一着色树脂部分成型的LED芯片之外的所有LED芯片的第二颜色树脂部分模制，并且具有与第一着色树脂部分不同的颜色; 以及第三颜色树脂部分，其包围第一着色树脂部分和第二颜色树脂部分，并且具有与第一着色树脂部分和第二着色树脂部分不同的颜色。

公开(公告)号：US20120175665A1

公开(公告)日：2012-07-12

申请号：US13244510

申请日：2011-09-25

Applicant: Jae-yun LIM ,  Kook-jin OH ,  Joon-gil LEE

Inventor： Jae-yun LIM ,  Kook-jin OH ,  Joon-gil LEE

IPC: H01L33/62 ,  H01L33/52

CPC classification number: H01L33/62 ,  H01L24/48 ,  H01L24/78 ,  H01L24/85 ,  H01L2224/4809 ,  H01L2224/48247 ,  H01L2224/48465 ,  H01L2224/78268 ,  H01L2224/78301 ,  H01L2224/85045 ,  H01L2224/85181 ,  H01L2224/85205 ,  H01L2924/00014 ,  H01L2924/01013 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/12036 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/12043 ,  H01L2924/12044 ,  H01L2924/181 ,  H01L2933/0066 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2224/85399 ,  H01L2224/05599

Abstract: A light-emitting device package includes: a package body on which a mount portion and a terminal portion are disposed; a light-emitting device chip that is mounted on the mount portion; and a bonding wire that electrically connects an electrode of the light-emitting device chip and the terminal portion. The bonding wire includes a rising portion that rises from the light-emitting device chip to a loop peak, and an extended portion that connects the loop peak and the terminal portion. A first kink portion, which is bent in a direction intersecting a direction in which the rising portion rises, is disposed on the rising portion.

Abstract translation: 发光器件封装包括：封装体，其上设置有安装部分和端子部分; 安装在所述安装部上的发光装置芯片; 以及将发光元件芯片的电极和端子部电连接的接合线。 接合线包括从发光器件芯片上升到环形峰值的上升部分，以及连接环形峰值和端子部分的延伸部分。 在与上升部分相反的方向上弯曲的第一扭结部分设置在上升部分上。

公开(公告)号：US08197090B2

公开(公告)日：2012-06-12

申请号：US12832469

申请日：2010-07-08

Applicant: Dae Yeon Kim ,  Young Sam Park

Inventor： Dae Yeon Kim ,  Young Sam Park

IPC: F21V5/04

CPC classification number: H01L33/58 ,  H01L33/46

Abstract: The invention relates to an LED package having a large beam angle of light emitted from an LED, simplifying a shape of a lens and an assembly process, and to a backlight unit using the same. The LED package includes a housing with a seating recess formed therein and at least one LED seated in the seating recess. The LED package also includes a lens having a predetermined sag on an upper side thereof, covering an upper part of the LED. The LED package and the backlight unit using the same can emit light uniformly without bright spots formed in an output screen, uses a simpler shaped lens with an increased beam angle, and minimizes a color mixing region to achieve miniaturization.

Abstract translation: 本发明涉及一种LED封装，其具有从LED发射的大的光束角度，简化透镜的形状和组装过程，以及使用该LED封装的背光单元。 LED封装包括壳体，其具有形成在其中的座部凹部和位于座部凹部中的至少一个LED。 LED封装还包括在其上侧具有预定凹陷的透镜，覆盖LED的上部。 LED封装和使用该LED封装的背光单元可以均匀地发光而不会在输出屏幕中形成亮点，使用具有增大的光束角的更简单形状的透镜，并且使混色区域最小化以实现小型化。

公开(公告)号：US08182106B2

公开(公告)日：2012-05-22

申请号：US13045946

申请日：2011-03-11

Applicant: Jae Hong Shin ,  Hun Joo Hahm ,  Hyung Suk Kim ,  Chang Ho Shin ,  Dae Yeon Kim ,  Chul Hee Yoo ,  Dong Hyun Cho

Inventor： Jae Hong Shin ,  Hun Joo Hahm ,  Hyung Suk Kim ,  Chang Ho Shin ,  Dae Yeon Kim ,  Chul Hee Yoo ,  Dong Hyun Cho

IPC: F21V21/00

CPC classification number: G02F1/133603 ,  G02F1/133606 ,  G02F1/133611 ,  G09G3/3413 ,  G09G3/3426 ,  G09G2320/0233

Abstract: There is provided a surface light source using white light emitting diodes including: a plurality of white light emitting diodes arranged at a predetermined distance from one another, wherein the white light emitting diodes are arranged such that a light emitting diode unit defined by each of the white light emitting diodes and corresponding ones of the white light emitting diodes disposed at a closest distance from the each white light emitting diode has a central light amount ranging from 80% to 120% with respect to an average light amount of the white light emitting diodes.

Abstract translation: 提供了一种使用白色发光二极管的表面光源，包括：布置成彼此预定距离的多个白色发光二极管，其中白色发光二极管被布置成使得由每个 布置在与白色发光二极管最近距离的白色发光二极管和白色发光二极管中的相应的白色发光二极管的中心光量相对于白色发光二极管的平均光量为80％〜120％ 。

公开(公告)号：US20120107976A1

公开(公告)日：2012-05-03

申请号：US13345437

申请日：2012-01-06

Applicant: IL KWEON JOUNG

Inventor： IL KWEON JOUNG

IPC: H01L33/60

CPC classification number: H01L33/486 ,  H01L33/60 ,  H01L2224/48091 ,  H01L2924/00014

Abstract: The present invention relates to light emitting diode (LED) packages and methods of manufacturing the same, and more particularly, to an LED package and a method of manufacturing the same that can reduce a variation of color coordinates of mass-produced LED packages.

Abstract translation: 发光二极管（LED）封装及其制造方法技术领域本发明涉及发光二极管（LED）封装及其制造方法，更具体地，涉及一种LED封装及其制造方法，其可以减少批量生产的LED封装的色坐标变化。

公开(公告)号：US08168995B2

公开(公告)日：2012-05-01

申请号：US11543231

申请日：2006-10-05

Applicant: Kun Yoo Ko ,  Seok Min Hwang ,  Hyung Jin Park

Inventor： Kun Yoo Ko ,  Seok Min Hwang ,  Hyung Jin Park

IPC: H01L33/00

CPC classification number: H01L33/38 ,  H01L33/20 ,  H01L33/32 ,  H01L2224/05552

Abstract: A nitride based semiconductor LED is provided. In the nitride based semiconductor LED, an n-type nitride semiconductor layer is formed on a substrate. The n-type nitride semiconductor layer has the top surface divided into a first region and a second region with a finger structure, so that the first region and the second region are meshed with each other. An active layer is formed on the second region of the n-type nitride semiconductor layer. A p-type nitride semiconductor layer is formed on the active layer, and a reflective electrode is formed on the p-type nitride semiconductor layer. A p-electrode is formed on the reflective electrode, and an n-electrode is formed on the first region of the n-type nitride semiconductor layer. A plurality of n-type electrode pads are formed on the n-electrode. At least one of the n-type electrode pads are arranged adjacent to different sides of the n-electrode.

Abstract translation: 提供了一种基于氮化物的半导体LED。 在氮化物系半导体LED中，在基板上形成n型氮化物半导体层。 n型氮化物半导体层的顶表面被划分为具有手指结构的第一区域和第二区域，使得第一区域和第二区域彼此啮合。 在n型氮化物半导体层的第二区域上形成有源层。 在有源层上形成p型氮化物半导体层，在p型氮化物半导体层上形成反射电极。 在反射电极上形成p电极，在n型氮化物半导体层的第一区域上形成n电极。 在n电极上形成多个n型电极焊盘。 n型电极焊盘中的至少一个被布置成与n电极的不同侧相邻。

公开(公告)号：US08168454B2

公开(公告)日：2012-05-01

申请号：US12466086

申请日：2009-05-14

Applicant: Su Yeol Lee ,  Sang Ho Yoon ,  Doo Go Baik ,  Seok Beom Choi ,  Tae Sung Jang ,  Jong Gun Woo

Inventor： Su Yeol Lee ,  Sang Ho Yoon ,  Doo Go Baik ,  Seok Beom Choi ,  Tae Sung Jang ,  Jong Gun Woo

IPC: H01L21/00

CPC classification number: H01L33/32 ,  H01L33/14 ,  H01L33/40

Abstract: Provided is a vertical LED including an n-electrode; an n-type GaN layer formed under the n-electrode, the n-type GaN layer having a surface coming in contact with the n-electrode, the surface having a Ga+N layer containing a larger amount of Ga than that of N; an active layer formed under the n-type GaN layer; a p-type GaN layer formed under the active layer; a p-electrode formed under the p-type GaN layer; and a structure support layer formed under the p-electrode.

Abstract translation: 提供包括n电极的垂直LED; 形成在n电极下面的n型GaN层，n型GaN层具有与n电极接触的表面，该表面具有比N大的Ga的Ga + N层; 形成在n型GaN层下面的有源层; 形成在有源层下面的p型GaN层; 形成在p型GaN层下面的p电极; 以及在p电极下面形成的结构支撑层。