摘要:
Provided is a circuit device in which encapsulating resin to encapsulate a circuit board is optimized in shape, and a method of manufacturing the circuit device. A hybrid integrated circuit device, which is a circuit device according to the present invention includes a circuit board, a circuit element mounted on a top surface of the circuit board, and encapsulating resin encapsulating the circuit element, and coating the top surface, side surfaces, and a bottom surface of the circuit board. In addition, the encapsulating resin is partly recessed and thereby provided with recessed areas at two sides of the circuit board. The providing of the recessed areas reduces the amount of resin to be used, and prevents the hybrid integrated circuit device from being deformed by the cure shrinkage of the encapsulating resin.
摘要:
A non-volatile memory (NVM) system includes a plurality of NVM cells fabricated in a dual-well structure. Each NVM cell includes an access transistor and an NVM transistor, wherein the access transistor has a drain region that is continuous with a source region of the NVM transistor. The drain regions of each NVM transistor in a column of the array are commonly connected to a corresponding bit line. The control gates of each NVM transistor in a row of the array are commonly connected to a corresponding word line. The source regions of each of the access transistors in the array are commonly coupled. The NVM cells are programmed and erased without having to apply the high programming voltage VPP across the gate dielectric layers of the access transistors. As a result, the NVM cells can be scaled down to sub-0.35 micron geometries.
摘要:
In one embodiment, a semiconductor device is formed having a trench structure. The trench structure includes a single crystalline semiconductor plug formed along exposed upper surfaces of the trench. In one embodiment, the single crystalline semiconductor plug seals the trench to form a sealed core.
摘要:
In one embodiment a transistor is formed with a gate structure having an opening in the gate structure. An insulator is formed on at least sidewalls of the opening and a conductor is formed on the insulator.
摘要:
A non-volatile memory (NVM) system includes a set of NVM cells, each including: a NVM transistor; an access transistor coupling the NVM transistor to a corresponding bit line; and a source select transistor coupling the NVM transistor to a common source. The NVM cells are written by a two-phase operation that includes an erase phase and a program phase. A common set of bit line voltages are applied to the bit lines during both the erase and programming phases. The access transistors are turned on and the source select transistors are turned off during the erase and programming phases. A first control voltage is applied to the control gates of the NVM transistors during the erase phase, and a second control voltage is applied to the control gates of the NVM transistors during the program phase. Under these conditions, the average required number of Fowler-Nordheim tunneling operations is reduced.
摘要:
In one embodiment, the bulk input voltage is used to form a reference signal that is used for controlling a switching power supply system to operate in a power overload operating mode.
摘要:
A LED driver IC includes a control module(s) for controlling one or more LED drive parameters and non-volatile memory for storing settings data for that control module(s). The control module(s) is fully integrated into the LED driver IC and does not require any control input from off-chip components or signals. Therefore, the space requirements for LED circuits that make use of the LED driver IC can be minimized. Also, the non-volatile memory storage of settings data eliminates the need for an initialization or configuration input each time the LED driver IC is powered on. The non-volatile memory can be a one-time programmable memory or can be a reprogrammable memory.
摘要:
In one embodiment, a voltage regulator uses a first current to charge a by-pass capacitor for a first time period and uses a second current after the first time period.
摘要:
In one embodiment, a method for forming a molded flat pack style package includes attaching electronic chips to an array lead frame, which includes a plurality of elongated flag portions with tab portions and a plurality of leads. The method further includes connecting the electronic chips to specific leads, and then molding the array lead frame while leaving portions of the leads exposed to form a molded array structure. The molded array structure is then separated to provide molded flat pack style packages having exposed leads for insertion mount and exposed tab portions. In an alternative embodiment, the separation step produces a no-lead configuration with exposed tab portions.