摘要:
A control apparatus, a buck-boost power supply, and a control method that can control an output part comprising two primary switches which are N-type transistors without changing the switching frequency are provided. A control apparatus for a buck-boost power supply comprises: a pulse-width modulation (PWM) signal generator configured to generate a PWM signal having a pulse whose pulse width is based on an output voltage; a mode pulse signal generator configured to generate a mode pulse signal having a signal whose time period is based on at least one of an input voltage, a difference between an input voltage and the output voltage, and a difference between an input voltage and a voltage proportional to the output voltage; a first delayed signal generator configured to generate a first delayed signal having a pulse whose rising edge or falling edge is delayed for a first delay time from a rising edge or a falling edge of the pulse of the PWM signal; and an output controller configured to control an output part of the buck-boost power supply, based on the PWM signal, the mode pulse signal, and the first delayed signal, the output part comprising: two primary switches that are each an N-type transistor; a boost capacitor for driving the high-side switch of the primary switches; and two secondary switches that are each a transistor, wherein the output controller controls switching of the output part so that a first time period during which the high-side switch of the primary switches is off and the low-side switch of the primary switches is on is longer than or equal to the first delay time.
摘要:
A system and method for providing electrical isolation between closely spaced devices in a high density integrated circuit (IC) are disclosed herein. An integrated circuit (IC) comprising a substrate, a first device, a second device, and a buried trench in the substrate and a method of fabricating the same are also discussed. The buried trench is positioned between first and second devices and may be filled with dielectric material. Alternatively, the buried trench contains air. A method of using Hydrogen annealing to create the buried trench is disclosed.
摘要:
A method of restoring an ECC syndrome in a non-volatile memory device having memory cells arranged in a plurality of sectors within a memory cell array, the method comprising identifying a first sector including at least one page having a disabled ECC (error correction code) flag; reading the value of all data bits in said at least one page; calculating values for ECC bits in said at least one page; and writing said data bit values and said calculated ECC bit values to a second sector in the memory cell array.
摘要:
During formation of a charge trap separation in a semiconductor device, a polymer deposition is formed in a reactor using a first chemistry. In a following step, a second chemistry can be used to etch the polymer deposition in the reactor. The same or similar second chemistry can be used in a second etching step to expose a first oxide layer in each of the cells of the semiconductor device and to form a flat upper surface. This additional etch step can also be performed by the reactor, thereby reducing the number of machines required in the formation process.
摘要:
Manufacturing of semiconductor devices often involves performed photolithography to pattern and etch the various features of those devices. Such photolithography involves masking and focusing light onto a surface of the semiconductor device for exposing and etching the features of the semiconductor devices. However, due to design specifications and other causes, the semiconductor devices may not have a perfectly flat light-incident surface. Rather, some areas of the semiconductor device may be raised or lowered relative to other areas of the semiconductor device. Therefore, focusing the light on one area causes another to become unfocused. By carefully designing a photomask to cause phase shifts of the light transmitted therethrough, focus across all areas of the semiconductor device can be achieved during photolithography, which results in sharp and accurate patterns formed on the semiconductor device.
摘要:
A method, apparatus, and tangible computer readable medium for processing a Hidden Markov Model (HMM) structure are disclosed herein. For example, the method includes receiving Hidden Markov Model (HMM) information from an external system. The method also includes processing back pointer data and first HMM states scores for one or more NULL states in the HMM information. Second HMM state scores are processed for one or more non-NULL states in the HMM information based on at least one predecessor state. Further, the method includes transferring the second HMM state scores to the external system.
摘要:
Disclosed herein are system, method and computer program product embodiments for utilizing soft programming a nonvolatile memory. An embodiment operates by sequentially applying a single soft programming voltage pulse to all memory cells along each word line in the nonvolatile memory that fail soft programming verification in a first phase. This sequential application of the single soft programming voltage pulse in the first phase may repeat a predetermined number of times or until a threshold is met. Once the predetermined number of times completes, or the threshold is met, soft programming proceeds to a second phase where soft programming remains with each word line until all memory cells along the word line passes soft programming verification.
摘要:
Disclose is a non-volatile memory (NVM) cell sensing circuit. The sensing circuit may include a sense-side-line conditioning circuit segment adapted to condition a sense-side-line of the NVM cell. Conditioning may include adjusting a charge density within the NVM cell sense-side-line during a first NVM cell current sensing phase. The conditioning circuit segment may also be adapted to maintain an NVM cell current sensing condition during a second NVM cell current sensing phase. Adjusting a charge density within the NVM cell sense-side-line may include inducing current in the sense-side-line in a direction opposite to the sensing current.
摘要:
An apparatus and method for testing is provided. An integrated circuit includes a comparison circuit that is arranged to trip based on a power supply signal reaching a trip point. The integrated circuit also includes an analog-to-digital converter that is arranged to convert the power supply signal into a digital signal. The integrated circuit also includes a storage component that stores a digital value associated with the digital signal, and provides the power supply value at an output pin of the integrated circuit. The integrated circuit includes a latch that is coupled between the analog-to-digital converter and the storage component. The latch is arranged to open when the comparison circuit trips, such that, when the comparison circuit trips, the storage component continues to store a digital value such that the digital value corresponds to the voltage associated with the power supply signal when the comparison circuit tripped.
摘要:
Embodiments of the present invention include a method for multi-chip packaging. For example, the method includes positioning a first integrated circuit (IC) on a substrate package based on a first set of reference markers in physical contact with the substrate package and confirming an alignment of the first IC based on a second set of reference markers in physical contact with the substrate package. A second IC is stacked onto first IC based on the first set of reference markers. An alignment of the second IC is confirmed based on the second set of reference markers, where the second set of reference markers is disposed at a different location on the substrate package than the first set of reference markers.