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公开(公告)号:US20090008366A1
公开(公告)日:2009-01-08
申请号:US12208732
申请日:2008-09-11
IPC分类号: B44C1/22
CPC分类号: H01L21/31111 , H01L21/67086
摘要: This etching composition for etching hafnium compound, includes a fluoride compound and a chloride compound. This method for etching a substrate, includes etching a film which contains hafnium compound and is formed on a substrate by using an etching composition, wherein the etching composition contains a fluoride compound and a chloride compound.
摘要翻译: 用于蚀刻铪化合物的蚀刻组合物包括氟化物和氯化物。 用于蚀刻基板的方法包括使用蚀刻组合物蚀刻含有铪化合物的膜并在基板上形成,其中蚀刻组合物含有氟化物和氯化物。