公开(公告)号：US12126031B2

公开(公告)日：2024-10-22

申请号：US17615830

申请日：2020-06-03

申请人： TOYO TANSO CO., LTD.

发明人： Yoshio Shodai ,  Mizuho Anzai

IPC分类号： H01M4/92 ,  H01M4/86 ,  H01M4/88

CPC分类号： H01M4/926 ,  H01M4/8605 ,  H01M4/8828 ,  H01M2004/8689

摘要： A supported platinum catalyst having a high ratio of a diffraction peak intensity of a Pt (220) plane and having excellent oxidation resistance, obtained by a simple production method without using a polymer. The supported platinum catalyst includes a carbon support and platinum fine particles supported on the carbon support, the platinum fine particles being such that a ratio of a diffraction peak intensity of a (220) plane with respect to a total of diffraction peak intensities of a (111) plane, a (200) plane, and the (220) plane by X-ray diffraction is not less than 0.128.

公开(公告)号：US20220002905A1

公开(公告)日：2022-01-06

申请号：US17277378

申请日：2019-09-19

申请人： TOYO TANSO CO., LTD.

发明人： Norihito YABUKI ,  Takuya SAKAGUCHI ,  Akiko JINNO ,  Satoru NOGAMI ,  Makoto KITABATAKE

IPC分类号： C30B25/18 ,  H01L21/02 ,  H01L21/324

摘要： In a method for manufacturing a device fabrication wafer, an SiC epitaxial wafer that is an SiC wafer 40 having a monocrystalline SiC epitaxial layer formed thereon is subjected to a basal plane dislocation density reduction step of reducing the density of basal plane dislocations existing in the epitaxial layer of the SiC epitaxial wafer, to thereby manufacture the device fabrication wafer for use to fabricate a semiconductor device. In the basal plane dislocation density reduction step, the SiC epitaxial wafer is heated under Si vapor pressure for a predetermined time necessary to reduce the density of basal plane dislocations, without formation of a cap layer on the SiC epitaxial wafer, so that the density of basal plane dislocations is reduced with suppression of surface roughening.

公开(公告)号：US20210040643A1

公开(公告)日：2021-02-11

申请号：US16611903

申请日：2018-05-11

申请人： TOYO TANSO CO., LTD.

发明人： Takuya SAKAGUCHI ,  Masato SHINOHARA ,  Satoru NOGAMI

IPC分类号： C30B25/12 ,  C23C16/458 ,  C30B23/06 ,  C30B25/20 ,  C30B29/36 ,  C23C16/32 ,  H01L21/02

摘要： A susceptor is a component for placing a SiC substrate in forming an epitaxial layer on a main surface of the SiC substrate. In this susceptor, a support surface and a recess are formed. The support surface is formed on lower position than an upper surface of the susceptor and supports an outer circumferential of the rear face of the SiC substrate. The recess is formed in the inside of the diametrical direction than the support surface, and at least the surface is made of a tantalum carbide, the depth of that is not in contact with the rear face of the Sic substrate in forming the epitaxial layer.

公开(公告)号：US20200318908A1

公开(公告)日：2020-10-08

申请号：US16907866

申请日：2020-06-22

申请人： TOYO TANSO CO., LTD.

发明人： Syuhei TOMITA ,  Hiroshi MACHINO ,  Toshiharu HIRAOKA ,  Shingo BITO

IPC分类号： F27D5/00 ,  D03D15/12 ,  F27D3/02 ,  D03D1/00 ,  D03D13/00 ,  D03D19/00 ,  C21D9/00 ,  F27D3/12 ,  F27D3/00

摘要： A heat treatment furnace jig having a box-like frame including a rim part and a bottom part, the bottom part being removable from the rim part, and a removable net of woven strands disposed in the box-like frame and supported from below by the bottom part. The net has a triaxial weave of strands, each strand having a bundle of carbon fibers that are aligned without twisting, wherein, among the woven strands, strands of at least one direction are held by two strands in another direction, and the net is impregnated with a matrix material.

公开(公告)号：US10538691B2

公开(公告)日：2020-01-21

申请号：US15400822

申请日：2017-01-06

申请人： Toyo Tanso Co., Ltd.

发明人： Yoshiaki Hirose

IPC分类号： C09K5/14 ,  H05K7/20 ,  H05K9/00

摘要： An expanded-graphite sheet whose thermal conductivity in its surfacewise directions is relatively uniform and higher than its thermal conductivity in its perpendicular direction can be produced efficiently at relatively low cost. Because the expanded-graphite sheet is made of expanded graphite alone and has thermal conductivity in parallel direction of 350 W/(m·K) or more, its thermal conductivity in parallel direction is much higher than its thermal conductivity in a perpendicular direction; therefore, it is suitable for the conduction and diffusion of heat. Besides, the expanded-graphite sheet can be produced easily, in a short time, efficiently, at relatively low cost.

公开(公告)号：US10388536B2

公开(公告)日：2019-08-20

申请号：US15527622

申请日：2015-11-17

申请人： Toyo Tanso Co., Ltd. ,  KWANSEI GAKUIN EDUCATIONAL FOUNDATION

发明人： Satoshi Torimi ,  Masato Shinohara ,  Youji Teramoto ,  Norihito Yabuki ,  Satoru Nogami ,  Tadaaki Kaneko ,  Koji Ashida ,  Yasunori Kutsuma

IPC分类号： H01L21/306 ,  H01L21/67 ,  C30B29/36 ,  C30B33/12 ,  H01L21/302 ,  C30B35/00

摘要： Provided is a method for controlling the rate of etching of a SiC substrate based on a composition of a storing container. The etching method of the present invention is for etching the SiC substrate by heating the SiC substrate under Si vapor pressure, in a state where the SiC substrate is stored in a crucible. The crucible is formed of a tantalum metal, and has a tantalum carbide layer provided on an internal space side of the tantalum metal, and a tantalum silicide layer provided on the side further toward the internal space side than the tantalum carbide layer. The rate of etching of the SiC substrate is controlled based on difference in a composition of the tantalum silicide layer.

公开(公告)号：US10358741B2

公开(公告)日：2019-07-23

申请号：US13996077

申请日：2011-06-29

申请人： Satoshi Torimi ,  Satoru Nogami ,  Tsuyoshi Matsumoto

发明人： Satoshi Torimi ,  Satoru Nogami ,  Tsuyoshi Matsumoto

IPC分类号： C30B19/12 ,  C30B29/36 ,  C30B28/14

摘要： Provided is an inexpensive seed material for liquid phase epitaxial growth of silicon carbide. A seed material 12 for liquid phase epitaxial growth of a monocrystalline silicon carbide includes a surface layer containing a polycrystalline silicon carbide with a 3C crystal polymorph. Upon X-ray diffraction of the surface layer thereof, a first-order diffraction peak corresponding to a (111) crystal plane is observed as a diffraction peak corresponding to the polycrystalline silicon carbide with a 3C crystal polymorph but no other first-order diffraction peak having a diffraction intensity of 10% or more of the diffraction intensity of the first-order diffraction peak corresponding to the (111) crystal plane is observed.

公开(公告)号：US20190083957A1

公开(公告)日：2019-03-21

申请号：US16083606

申请日：2017-01-18

申请人： NISSAN MOTOR CO., LTD. ,  TOYO TANSO CO., LTD.

发明人： Takehiko OKUI ,  Hiroyuki TANAKA ,  Kazuki ARIHARA ,  Tetsuya MASHIO ,  Atsushi OHMA ,  Takahiro MORISHITA ,  Yoshio SHODAI

IPC分类号： B01J21/18 ,  B01J23/42 ,  B01J37/08 ,  B01J37/34 ,  B01J35/00 ,  H01M4/90 ,  C01B32/20

摘要： Provided are a carbon powder which can provide a catalyst exhibiting high performance and a catalyst. A carbon powder for fuel cell comprising carbon as a main component, which has a ratio (B/A) of an area B of peak 1 to an area A of peak 0 of more than 0 and 0.15 or less, wherein the area A represents an area of peak 0 at a position of 2θ=22.5° to 25° as observed by XRD analysis when the carbon powder for fuel cell is subjected to heat treatment at 1800° C. for 1 hour in an inert atmosphere, and the area B represents an area of peak 1 at a position of 2θ=26° as observed by XRD analysis when the carbon powder for fuel cell is subjected to heat treatment at 1800° C. for 1 hour in an inert atmosphere.

公开(公告)号：US20180301359A1

公开(公告)日：2018-10-18

申请号：US15766191

申请日：2016-10-06

申请人： Toyo Tanso Co., Ltd.

发明人： Satoshi Torimi ,  Masato Shinohara ,  Norihito Yabuki ,  Satoru Nogami

IPC分类号： H01L21/67 ,  H01L21/3065 ,  H01L21/04 ,  H01L21/687

摘要： A heat treatment container (1) is provided with support members (6) for supporting a disc-shaped SiC substrate (2), which is an object, at a time of an etching treatment of the SiC substrate (2). Each of the support members (6) has an inclined surface (6F) for supporting a lower surface end (2E) of the SiC substrate (2), the inclined surface being inclined so as to increasingly approach the centerline of the SiC substrate (2) going downward. More specifically, each of the support members (6) is formed in a conical shape with a diameter that increases going downward, and a conical surface which is the peripheral surface of each supporting member forms the inclined surface (6F). A vertically-middle section of the inclined surface (6F) contacts the lower surface end (2E) of the SiC substrate (2).

公开(公告)号：US09991175B2

公开(公告)日：2018-06-05

申请号：US15300653

申请日：2015-03-10

申请人： Toyo Tanso Co., Ltd.

发明人： Satoshi Torimi ,  Norihito Yabuki ,  Satoru Nogami

IPC分类号： H01L21/00 ,  H01L21/66 ,  H01L21/02 ,  H01L21/04 ,  H01L29/16

CPC分类号： H01L22/12 ,  H01L21/0201 ,  H01L21/02019 ,  H01L21/02024 ,  H01L21/0475 ,  H01L21/3065 ,  H01L29/1608

摘要： This method for estimating the depth of latent scratches in SiC substrates includes an etching step, a measurement step, and an estimation step. In the etching step, a SiC substrate in which at least the surface is formed from single crystal SiC, and which has been subjected to machining, is subjected to heat treatment under Si atmosphere to etch the surface of the SiC substrate. In the measurement step, the surface roughness or the residual stress of the SiC substrate which has been subjected to the etching step is measured. In the estimation step, the depth of latent scratches or the presence or absence of latent scratches in the SiC substrate before the etching step are estimated on the basis of the results obtained in the measurement step.