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公开(公告)号：US20230132660A1
公开(公告)日：2023-05-04
申请号：US17514815
申请日：2021-10-29
发明人： Chelsea Dubose , Barton Lane , Merritt Funk , Justin Moses , Yohei Yamazawa
摘要： A radio frequency (RF) system including: a first conductive covering surface, a portion of the first conductive covering surface including a portion of the first outer wall of a first RF device; a second conductive covering surface aligned to the first conductive covering surface, the second conductive covering surface being disposed around the insulating hole; an insulating hole for an RF center conductor extending through the first conductive covering surface and the second conductive covering surface, the first conductive covering surface and the second conductive covering surface being disposed around the insulating hole; a cavity bounded by the first conductive covering surface and the second conductive covering surface, the cavity being an insulating region; and an RF signal pickup disposed within the cavity.
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公开(公告)号：US11639947B2
公开(公告)日：2023-05-02
申请号：US17116201
申请日：2020-12-09
发明人： Kenta Saiki , Takuya Ishida
摘要： A method of detecting a foreign object on a stage according to one aspect of the present disclosure includes acquiring first position information of a first pattern included in a first image in a reference state of a surface of the stage capable of attracting an object to be inspected; acquiring second position information of a second pattern included in a second image of the surface, the second image being obtained after obtaining the first image; and detecting one or more foreign objects on the surface by comparing the first position information and the second position information.
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公开(公告)号：US20230128868A1
公开(公告)日：2023-04-27
申请号：US17905438
申请日：2021-03-02
发明人： Hiroki MURAKAMI , Shuichiro SAKAI
IPC分类号： H01L21/311 , H01L21/3065 , H01J37/32
摘要： A substrate processing method of etching an etching target film formed on a substrate includes: preparing the substrate having the etching target film; and etching the etching target film, wherein the etching the etching target film includes repeating, a plurality of times, supplying an etchant gas, and plasma-exciting a reaction gas to expose the substrate to plasma of the reaction gas.
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公开(公告)号：US20230127467A1
公开(公告)日：2023-04-27
申请号：US17970609
申请日：2022-10-21
发明人： Kae TAKAHASHI , Maju TOMURA , Yoshihide KIHARA
IPC分类号： H01L21/3065 , H01L21/67
摘要： A plasma processing method includes: (a) providing a substrate having an etching target film including a silicon oxide film and a silicon nitride film, and a mask film defining an opening over the etching target film, on a substrate support in a chamber of a plasma processing apparatus; (b) generating a first plasma from a first processing gas including HF gas, CxFy gas (x and y are integers of 1 or more) or CsHtFu gas (s, t, and u are integers of 1 or more), and an oxygen-containing gas to etch the silicon nitride film; and (c) generating a second plasma from a second processing gas including HF gas, CvFw gas (v and w are integers of 1 or more), and an oxygen-containing gas to etch the silicon oxide film. In (b) and (c), a temperature of the substrate support is set to 0° C. or lower.
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公开(公告)号：US11636579B2
公开(公告)日：2023-04-25
申请号：US17178778
申请日：2021-02-18
发明人： Toyohisa Tsuruda , Masato Hosaka
摘要： An information processing method includes obtaining information on a deformation factor of a surface of a target substrate; obtaining a surface image of the target substrate; calculating a correction coefficient for correcting an image change due to deformation of the surface, based on the information on the deformation factor of the surface; and generating a corrected image of the target substrate by correcting the surface image of the target substrate using the correction coefficient.
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公开(公告)号：US20230122317A1
公开(公告)日：2023-04-20
申请号：US17964708
申请日：2022-10-12
IPC分类号： H01L21/687 , H01L21/683 , H01L21/67
摘要： There is a substrate placing method for placing a substrate on a placing surface of a placing table in a chamber of a substrate processing apparatus for processing a substrate, the placing table having the placing surface on which a substrate is placed and a tapered surface for guiding the substrate disposed at an outer periphery of the placing surface, the method comprising, locating a lift pin to a substrate transfer position over the placing surface, the lift pin being capable of protruding from and retracting below the placing surface, and transferring the substrate onto the lift pin; lowering the lift pin, on which the substrate is placed, to a substrate placing position lower than the placing surface; and raising the lift pin by a short distance and then returning the lift pin to the substrate placing position.
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公开(公告)号：US20230119730A1
公开(公告)日：2023-04-20
申请号：US18082670
申请日：2022-12-16
发明人： Kohei FUKUSHIMA
IPC分类号： C23C16/52 , C23C16/455 , H01L21/687 , C23C16/458 , H01L21/673 , C23C16/40 , H01L21/67
摘要： A substrate processing method includes supplying processing gas from a plurality of gas holes formed along a longitudinal direction of an injector, which extends in a vertical direction along an inner wall surface of a processing container and is rotatable around a rotational axis extending in the vertical direction, to perform a predetermined process on a substrate accommodated in the processing container. The predetermined process includes a plurality of operations, and a supply direction of the processing gas is changed by rotating the injector in accordance with the operations.
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公开(公告)号：US20230117812A1
公开(公告)日：2023-04-20
申请号：US17451094
申请日：2021-10-15
发明人： Zhiying Chen , Barton Lane , Yun Han , Peter Lowell George Ventzek , Alok Ranjan
IPC分类号： H01J37/32
摘要： A method for plasma processing includes: sustaining a plasma in a plasma processing chamber, the plasma processing chamber including a first radio frequency (RF) electrode and a second RF electrode, where sustaining the plasma includes: coupling an RF source signal to the first RF electrode; and coupling a bias signal between the first RF electrode and the second RF electrode, the bias signal having a bipolar DC (B-DC) waveform including a plurality of B-DC pulses, each of the B-DC pulses including: a negative bias duration during which the pulse has negative polarity relative to a reference potential, a positive bias duration during which the pulse has positive polarity relative to the reference potential, and a neutral bias duration during which the pulse has neutral polarity relative to the reference potential.
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公开(公告)号：US20230111710A1
公开(公告)日：2023-04-13
申请号：US17960746
申请日：2022-10-05
发明人： Takeya INOUE , Kenji SEKIGUCHI , Mitsuaki IWASHITA , Hirokazu UEDA , Koji AKIYAMA , Ryuichi ASAKO
摘要： A purification processing apparatus for supplying purified isopropyl alcohol to a substrate processing apparatus. The purification processing apparatus includes: a processing chamber in which unpurified isopropyl alcohol and ionic liquid are mixed, and the isopropyl alcohol and the ionic liquid are separated to purify the isopropyl alcohol; an unpurified solvent supply port configured to supply the unpurified isopropyl alcohol to the processing chamber; an ionic liquid supply port configured to supply the ionic liquid to the processing chamber; and a purified solvent outlet configured to supply the purified isopropyl alcohol from the processing chamber to the substrate processing apparatus.
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公开(公告)号：US20230110797A1
公开(公告)日：2023-04-13
申请号：US17932752
申请日：2022-09-16
IPC分类号： H01L21/677 , H01L21/68
摘要： A stage includes a base on which an object to be transported or tested is placed, four movable bodies configured to support the base in a manner so that the base can be raised and lowered, four driving motors, provided in correspondence with the four movable bodies, and configured to independently raise and lower the four movable bodies, respectively, four guides configured to guide the four movable bodies, respectively, and a support frame, having wall surfaces parallel to a raising and lowering direction of the base and continuous along a direction perpendicular to the raising and lowering direction of the base, and the four guides fixed to the wall surfaces.
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