公开(公告)号：US4672179A

公开(公告)日：1987-06-09

申请号：US646480

申请日：1984-08-31

申请人： Masayuki Onishi ,  Kenzo Ito ,  Morio Asahi

发明人： Masayuki Onishi ,  Kenzo Ito ,  Morio Asahi

IPC分类号： A47J27/62 ,  G05D23/26 ,  F27D11/02

CPC分类号： A47J27/62 ,  G05D23/26

摘要： Disclosed is an electric rice cooker which includes a pot to hold rice and water, an inner case defining a heating space between the inner case and the outer peripheral and bottom surfaces of the pot, an outer case supporting the inner case, and at least one heater disposed in the heating space at a fixed distance from each of the pot and the inner case for heating air in the heating space to circulate the same by convection, thereby heating the pot and the rice and water in the pot from the upper portion.

摘要翻译： 公开了一种电饭煲，其包括容纳米饭和水的锅，内壳，其在内壳和罐的外周和底面之间限定加热空间，支撑内壳的外壳和至少一个 加热器设置在加热空间中，与锅体和内壳体中的每一个固定距离，用于加热空气中的空气，以通过对流使其循环，从而从上部加热锅中的锅和水和水。

公开(公告)号：US4381528A

公开(公告)日：1983-04-26

申请号：US228888

申请日：1981-01-27

申请人： Masahiko Fujioka

发明人： Masahiko Fujioka

IPC分类号： G11B25/04 ,  G11B23/02 ,  G11B33/14 ,  G11B17/00

CPC分类号： G11B33/1446 ,  G11B23/021

摘要： An enclosed-type magnetic disc recording and/or reproducing apparatus according to this invention, having a pressure chamber to enclose a bearing unit of a flange rotating along with a magnetic disc, introduces an air pressure at a high-pressure portion, created by an air flow produced by rotation of the magnetic disc and the flange, into the pressure chamber so as to raise the pressure within the pressure chamber to a level higher than 1 atm., thereby preventing the lubricant evaporated from the bearing member from sticking to the magnetic disc or head to lower the faculty thereof.

摘要翻译： 根据本发明的封闭式磁盘记录和/或再现装置，具有用于封闭与磁盘一起旋转的凸缘的轴承单元的压力室，将压力引入高压部分，由 通过磁盘和凸缘的旋转而产生的气流进入压力室，以将压力室内的压力升高到高于1atm的水平，从而防止从轴承构件蒸发的润滑剂粘附到磁性 圆盘或头部以降低其教学水平。

公开(公告)号：US4371419A

公开(公告)日：1983-02-01

申请号：US115195

申请日：1980-01-25

申请人： Tsuguo Fukuda ,  Hitoshi Hirano

发明人： Tsuguo Fukuda ,  Hitoshi Hirano

IPC分类号： C01G35/00 ,  C30B15/00 ,  C30B29/30 ,  H01L41/18 ,  H01L41/22 ,  H01L41/39 ,  C30B15/10

CPC分类号： C30B15/00 ,  C30B29/30 ,  Y10S117/90 ,  Y10S117/906 ,  Y10S117/91

摘要： A method for producing a lithium tantalate single crystal comprises the steps of preparing a melt consisting essentially of lithium tantalate in a platinum-rhodium crucible including (20 to 35 weight percent of rhodium and 80 to 65 weight percent of platinum), and growing a lithium tantalate single crystal from the melt.

摘要翻译： 一种钽酸锂单晶的制造方法包括以下步骤：在铂铑坩埚中制备基本上由钽酸锂组成的熔体，其包含（20〜35重量％的铑和80〜65重量％的铂），并生长锂 来自熔体的钽质单晶。

公开(公告)号：US4357621A

公开(公告)日：1982-11-02

申请号：US89102

申请日：1979-10-29

申请人： Minami Takeuchi

发明人： Minami Takeuchi

IPC分类号： H01L29/74 ,  H01L29/747

CPC分类号： H01L29/7416

摘要： A reverse conducting thyristor includes a thyristor section, a diode section and a semiconductor separator section for electrically separating both the sections. The thyristor section includes: a first region of first conductivity type, a second region of a second conductivity type, a third region of the first conductivity type, a main emitter region of the second conductivity type, an auxiliary emitter region formed, with intervention of the exposed portion of said third region, facing at least a part of the periphery of said main emitter region which does not contact the separate section and a cathode electrode, an auxiliary gate electrode contacting the auxiliary emitter region and enclosing, with intervention of the exposed portion of the third region, at least a part of the periphery of said main emitter region which does not contact the separate section, and a main gate electrode formed on the exposure surface of the third region contacting the side wall of the auxiliary emitter region which does not face the main emitter region. The respective components are successively layered on a first electrode acting as an anode electrode. The diode section includes a fourth region of the second conductivity type formed on the first or anode electrode, a fifth region of the first conductivity type formed on the fourth region, and a second electrode formed on the fifth region and connected to the cathode electrode. The separate section includes a sixth region formed on the first electrode and of the first conductivity type, a seventh region formed on the sixth region and of the second conductivity type and an eighth region formed on the seventh region and of the first conductivity type. The resistance values of the semiconductor layers between the cathode electrode and the second electrode and between the cathode electrode and the auxiliary gate electrode are each 2 to 18 Ohms.

公开(公告)号：US4351894A

公开(公告)日：1982-09-28

申请号：US262938

申请日：1981-05-12

申请人： Toshio Yonezawa ,  Takashi Ajima ,  Shunichi Hiraki ,  Yutaka Koshino ,  Yoshitami Oka

发明人： Toshio Yonezawa ,  Takashi Ajima ,  Shunichi Hiraki ,  Yutaka Koshino ,  Yoshitami Oka

IPC分类号： H01L21/033 ,  H01L21/311 ,  H01L21/314 ,  H01L21/316

CPC分类号： H01L21/31144 ,  H01L21/033 ,  H01L21/31111 ,  H01L21/31116 ,  H01L21/314 ,  Y10S438/945 ,  Y10S438/95 ,  Y10S438/951

摘要： A method of manufacturing a semiconductor device which comprises the step of applying a silicon carbide film having a prescribed perforated pattern as a masking film selectively to etch a silicon dioxide film or diffuse an impurity into a substrate.

摘要翻译： 一种制造半导体器件的方法，包括以下步骤：选择性地施加具有规定穿孔图案的碳化硅膜作为掩模膜，以蚀刻二氧化硅膜或将杂质扩散到衬底中。

公开(公告)号：US4341874A

公开(公告)日：1982-07-27

申请号：US221813

申请日：1980-12-31

申请人： Katsutoshi Nishida ,  Michiyasu Komatsu ,  Tadashi Miyano

发明人： Katsutoshi Nishida ,  Michiyasu Komatsu ,  Tadashi Miyano

IPC分类号： C04B35/584 ,  C04B35/593 ,  C04B35/58

CPC分类号： C04B35/584 ,  C04B35/593

摘要： Ceramic powder material mainly consists of silicon nitride wherein the content of oxygen combined with generally unavoidable impurities as measured by activation analysis accounts for less than 2% by weight. The above-mentioned ceramic powder material can also be prepared preferably by the method which comprises the step of heating raw ceramic powder material mainly consisting of silicon nitride to 1,400.degree. C. to 1,900.degree. C. in the presence of a separately prepared nonsintered molding of ceramic material or sintered molding of ceramic material having a porosity of at least 10%.

摘要翻译： 陶瓷粉末材料主要由氮化硅组成，其中通过活化分析测量的与通常不可避免的杂质结合的氧含量低于2重量％。 上述陶瓷粉末材料也可以优选通过以下方法制备：在单独制备的非烧结成型体的存在下，将主要由氮化硅组成的原料陶瓷粉末材料加热至1400℃至1900℃ 陶瓷材料或具有至少10％的孔隙率的陶瓷材料的烧结成型体。

公开(公告)号：US4316743A

公开(公告)日：1982-02-23

申请号：US89312

申请日：1979-10-30

申请人： Mituo Kawai ,  Takashi Fujita ,  Hideo Shirai ,  Masatoshi Nakagawa ,  Hiroshi Abe

发明人： Mituo Kawai ,  Takashi Fujita ,  Hideo Shirai ,  Masatoshi Nakagawa ,  Hiroshi Abe

IPC分类号： C22C38/18 ,  C22C37/10

CPC分类号： C22C38/18

摘要： A metal alloy exhibiting exceptional damping characteristics consisting essentially of from 1 to 8% aluminum, 2 to 30% chromium, and including up to 0.02% carbon with the balance being essentially iron. The alloy is heat treated at a temperature in the range of 700.degree. to 1200.degree. C. to provide the alloy with the enhanced damping characteristics.

摘要翻译： 一种金属合金显示出特别的阻尼特性，其基本上由1％至8％的铝，2％至30％的铬组成，并且包括高达0.02％的碳，余量基本上是铁。 该合金在700〜1200℃的温度下进行热处理，以提供具有增强的阻尼特性的合金。

公开(公告)号：US4298883A

公开(公告)日：1981-11-03

申请号：US899820

申请日：1978-04-25

申请人： Shigeru Komatsu ,  Satoshi Takahashi ,  Masao Wakatsuki

发明人： Shigeru Komatsu ,  Satoshi Takahashi ,  Masao Wakatsuki

IPC分类号： H01L23/29 ,  H01L23/28 ,  H01L23/31 ,  H01L23/495 ,  H01L23/48 ,  H01L29/44

CPC分类号： H01L23/3107 ,  H01L23/49503 ,  H01L23/49537 ,  H01L23/49568 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L24/48 ,  H01L2924/00014 ,  H01L2924/01014 ,  H01L2924/01079 ,  H01L2924/01322 ,  H01L2924/14 ,  H01L2924/181 ,  Y10T29/49121

摘要： With a packaged semiconductor device of this invention, an IC pellet or chip supported on a mounting unit is encapsulated in plastics material, for example, epoxy resin or silicone resin. A plurality of lead strips are disposed at one end in the proximity of the mounting part of the mounting unit. The lead strips are electrically connected to the respective conductive pads of the IC pellet set on the mounting part of the mounting unit. The lead strips extend at the other end outside of an plastics material. Mounting unit-reinforcing side walls project substantially at right angles from the edges of the flat part of the mounting unit. The heat-radiating legs of the mounting unit extend substantially at right angles from the low edges of the side walls with the bottom surface of said legs exposed to the outside of the plastics material.

摘要翻译： 利用本发明的封装半导体器件，支撑在安装单元上的IC芯片或芯片被封装在塑料材料中，例如环氧树脂或硅树脂。 多个引线条设置在安装单元的安装部分附近的一端。 引线条电连接到安装在安装单元的安装部分上的IC芯片的相应导电焊盘。 引线条在另一端延伸到塑料材料外面。 安装单元加强侧壁从安装单元的平坦部分的边缘基本成直角地突出。 安装单元的散热腿从侧壁的低边缘基本上以直角延伸，并且所述腿的底表面暴露于塑料材料的外部。

公开(公告)号：US4296427A

公开(公告)日：1981-10-20

申请号：US70655

申请日：1979-08-28

申请人： Minami Takeuchi ,  Minoru Kuriki

发明人： Minami Takeuchi ,  Minoru Kuriki

IPC分类号： H01L29/74 ,  H01L29/747

CPC分类号： H01L29/7416

摘要： A reverse conducting thyristor comprises a thyristor section, a diode section and a separator section. The three sections are integrally formed into a cylindrical body. The thyristor section is constituted by a first region of a first conductivity type, a second region of the second conductivity type, a third region of the first conductivity type, a main emitter region of the second conductivity type, a cathode electrode, an auxiliary emitter region, an auxiliary gate electrode and a main gate electrode.The first region is formed on a first electrode, the second region on the first region, and the third region on the second region. The main emitter region is so formed in the third region as to have its surface on the same level with that of the third region. The auxiliary emitter region is similarly formed in the third region and faces at least a part of that periphery of the main emitter region which does not contact the separator section. The cathode electrode is formed on the main emitter region. The auxiliary gate electrode is formed partly on the third region and partly on the auxiliary emitter region and is arched concentrically with the cylindrical body so as to surround at least a part of said periphery of the main emitter region. The main gate electrode is formed on that surface portion of the third region which is adjacent to that lateral surface of the auxiliary emitter region which does not face the main emitter region.The diode section comprises a fourth region of the second conductivity type, a fifth region of the first conductivity type and a second electrode. The fourth region is formed on the first electrode, the fifth region on the fourth region, and the second electrode on the fifth region.The separator section is a plate which is constituted by a sixth region of the first conductivity type, a seventh region of the second conductivity type and an eight region of the first conductivity type. The sixth region is formed on the first electrode, the seventh region on the sixth region, and the eighth region on the seventh region.

公开(公告)号：US4292941A

公开(公告)日：1981-10-06

申请号：US176292

申请日：1980-08-08

申请人： Seigo Suzuki

发明人： Seigo Suzuki

IPC分类号： F02P5/15 ,  F02P7/067 ,  F02P5/04

CPC分类号： F02P7/067

摘要： There are provided a counter, a memory device which stores a combustion delay information, that is an information regarding the time delay between ignition initiation and combustion, and a processor. In response to a clock pulse the counter measures the interval between adjacent combustion initiation points and produces a count information corresponding to the combustion interval. The combustion delay information is read out of the memory device by the count information. The processor produces an ignition time information in response to the count information and the combustion delay information. The ignition time information contains an information corresponding to the difference between the combustion initiation points and the combustion delay time, and is used to generate a succeeding ignition initiation time.

摘要翻译： 设置有计数器，存储燃烧延迟信息的存储装置，即燃烧延迟信息，其是关于点火开始和燃烧之间的时间延迟的信息以及处理器。 响应于时钟脉冲，计数器测量相邻燃烧起始点之间的间隔，并产生对应于燃烧间隔的计数信息。 通过计数信息从存储装置读出燃烧延迟信息。 处理器响应于计数信息和燃烧延迟信息产生点火时间信息。 点火时间信息包含对应于燃烧起始点和燃烧延迟时间之间的差异的信息，并且用于产生随后的点火开始时间。