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    Ozone cleaning system
    1.
    发明授权
    Ozone cleaning system 有权
    臭氧清洁系统

    公开(公告)号：US09068149B2

    公开(公告)日：2015-06-30

    申请号：US12047442

    申请日：2008-03-13

    申请人： Daniel W. Lynn

    发明人： Daniel W. Lynn

    IPC分类号： B08B3/00 ,  C11D3/39 ,  B01F3/04 ,  B01F5/00 ,  B01F5/04 ,  B01F13/06 ,  C11D11/00 ,  C02F1/78

    CPC分类号： C11D3/3947 ,  B01F3/04475 ,  B01F3/04503 ,  B01F3/04985 ,  B01F5/0068 ,  B01F5/0415 ,  B01F13/065 ,  B01F2003/04886 ,  B01F2215/0468 ,  B08B2203/005 ,  C01B13/10 ,  C02F1/78 ,  C11D11/0041

    摘要： An industrial cleaning system that produces and distributes an aqueous ozone solution is described. The system provides a centralized system for producing the aqueous ozone solution and distributing the aqueous ozone solution to different application points at different flow rates and concentrations. The system includes an ozone generator for generating ozone gas, which is injected into a supply of water to form the aqueous ozone solution. A reaction vessel receives the aqueous ozone solution from the injector. The reaction vessel reduces the bubbles of ozone gas in the aqueous ozone solution to increase the oxidation reduction potential of the aqueous ozone solution.

    摘要翻译： 描述了生产和分配臭氧水溶液的工业清洁系统。 该系统提供了一种用于生产臭氧水溶液的集中式系统，并以不同的流量和浓度将臭氧水溶液分配到不同的应用点。 该系统包括用于产生臭氧气体的臭氧发生器，其被注入到水源中以形成臭氧水溶液。 反应容器从注射器接收臭氧水溶液。 反应容器减少臭氧水溶液中的臭氧气泡，以增加臭氧水溶液的氧化还原电位。

    Method for supplying hydroxyl radical-containing water and apparatus for supplying hydroxyl radical-containing water
    2.
    发明授权
    Method for supplying hydroxyl radical-containing water and apparatus for supplying hydroxyl radical-containing water 有权
    供给含羟基自由基水的方法和供给含羟基自由基水的装置

    公开(公告)号：US08715420B2

    公开(公告)日：2014-05-06

    申请号：US13376165

    申请日：2010-06-01

    申请人： Tadaharu Tanaka ,  Motonobu Shiomi ,  Akihiro Ueno

    发明人： Tadaharu Tanaka ,  Motonobu Shiomi ,  Akihiro Ueno

    IPC分类号： C02F1/461 ,  B08B17/00 ,  C11D11/00 ,  C02F1/78

    CPC分类号： B08B17/00 ,  B08B2203/005 ,  C02F1/68 ,  C02F1/722 ,  C02F1/78 ,  C02F2103/346 ,  C02F2305/023 ,  C11D11/0047 ,  G03F7/423

    摘要： Disclosed is a method for supplying hydroxyl radical-containing water, which is highly convenient and with which water containing a relatively high concentration of hydroxyl radicals can be supplied to the point of use. The method for supplying hydroxyl radical-containing water comprises a production step of producing hydroxyl radical-containing water by dissolving ozone, hydrogen peroxide, and at least one additive substance selected from a group consisting of a water-soluble organic compound, an inorganic acid, a salt of an inorganic acid, and hydrazine in pure water, a transferring step of transferring the produced hydroxyl radical-containing water to the point of use, and a supplying step of supplying the hydroxyl radical-containing water to the point of use after transferring.

    摘要翻译： 公开了一种提供含羟基自由基水的方法，该方法非常方便，并且可以向其使用含有相对高浓度的羟基自由基的水。 供给含羟基自由基水的方法包括通过溶解臭氧，过氧化氢和至少一种选自水溶性有机化合物，无机酸等的添加剂物质来制造含羟基自由基水的制造工序， 无机酸的盐和纯水中的肼，将生成的含羟基自由基的水转移到使用点的转移步骤，以及向转移后的使用点供给含羟基自由基水的供给工序 。

    Reaction vessel for an ozone cleaning system
    3.
    发明授权
    Reaction vessel for an ozone cleaning system 有权
    用于臭氧清洁系统的反应容器

    公开(公告)号：US08075705B2

    公开(公告)日：2011-12-13

    申请号：US12047461

    申请日：2008-03-13

    申请人： Daniel W. Lynn

    发明人： Daniel W. Lynn

    IPC分类号： B08B3/02

    CPC分类号： C11D3/3947 ,  B01F3/04475 ,  B01F3/04503 ,  B01F3/04985 ,  B01F5/0068 ,  B01F5/0415 ,  B01F13/065 ,  B01F2003/04886 ,  B01F2215/0468 ,  B08B2203/005 ,  C01B13/10 ,  C02F1/78 ,  C11D11/0041

    摘要： A reaction vessel for entraining ozone gas in an aqueous ozone solution for an industrial cleaning system is described. The reaction vessel includes a conical-shaped surface having two or more edges. The conical-shaped surface defines a generally hollow interior, and the two or more edges are in contact with the generally hollow interior. An inlet port is in fluidic communication with a supply of an aqueous ozone solution to supply the aqueous ozone solution to the conical-shaped surface. Nozzles are in fluidic communication with a supply of water, and the nozzles direct the water under pressure at the conical-shaped surface, and the water mixes with the aqueous ozone solution from the inlet port. An outlet is in fluidic communication with the industrial cleaning system. The reaction vessel may receive the aqueous ozone solution from an injector. The reaction vessel reduces the bubbles of ozone gas in the aqueous ozone solution and entrains the bubbles of ozone gas in the aqueous ozone solution to increase the oxidation reduction potential of the aqueous ozone solution.

    摘要翻译： 描述了用于将臭氧气体夹带在用于工业清洁系统的臭氧水溶液中的反应容器。 反应容器包括具有两个或多个边缘的圆锥形表面。 锥形表面限定了大体中空的内部，并且两个或多个边缘与大致中空的内部接触。 入口端口与臭氧水溶液的供给流体连通，以将臭氧水溶液供应到锥形表面。 喷嘴与水源流体连通，并且喷嘴将水压在锥形表面处，并且水与来自入口的臭氧水溶液混合。 出口与工业清洁系统流体连通。 反应容器可以从注射器接收臭氧水溶液。 反应容器减少臭氧水溶液中的臭氧气泡，并在臭氧水溶液中夹带臭氧气泡，提高臭氧水溶液的氧化还原电位。

    Aqueous ozone solution for ozone cleaning system
    4.
    发明授权
    Aqueous ozone solution for ozone cleaning system 有权
    臭氧清洁系统臭氧水溶液

    公开(公告)号：US08071526B2

    公开(公告)日：2011-12-06

    申请号：US12047498

    申请日：2008-03-13

    申请人： Daniel W. Lynn

    发明人： Daniel W. Lynn

    IPC分类号： C11D3/48

    CPC分类号： C11D3/3947 ,  B01F3/04475 ,  B01F3/04503 ,  B01F3/04985 ,  B01F5/0068 ,  B01F5/0415 ,  B01F13/065 ,  B01F2003/04886 ,  B01F2215/0468 ,  B08B2203/005 ,  C01B13/10 ,  C02F1/78 ,  C11D11/0041

    摘要： A method of making an aqueous ozone solution for an industrial cleaning system is described. The method includes providing a reaction vessel for entraining ozone gas in an aqueous solution. The reaction vessel includes a conical-shaped surface having a two or more edges or ridges. The conical-shaped surface defines an interior, and two or more edges or ridges are in contact with the interior. The reaction vessel is in fluidic communication with a supply of water. The reaction vessel is in fluidic communication with a supply of a first aqueous ozone solution. The first aqueous ozone solution is directed to the conical-shaped surface. Water is directed to the conical-shaped surface, and the water and the first aqueous ozone solution are mixed to form a second aqueous ozone solution.

    摘要翻译： 对工业清洗系统的臭氧水溶液的制造方法进行说明。 该方法包括提供用于将臭氧气体夹带在水溶液中的反应容器。 反应容器包括具有两个或多个边缘或脊的圆锥形表面。 锥形表面限定内部，并且两个或多个边缘或脊与内部接触。 反应容器与水源流体连通。 反应容器与供应第一臭氧水溶液流体连通。 第一种臭氧水溶液被引导到锥形表面。 将水引导到锥形表面，并将水和第一臭氧水溶液混合以形成第二臭氧水溶液。

    Semiconductor wafer treatment method and apparatus therefor
    6.
    发明授权
    Semiconductor wafer treatment method and apparatus therefor 有权
    半导体晶片处理方法及其装置

    公开(公告)号：US07731801B2

    公开(公告)日：2010-06-08

    申请号：US11213809

    申请日：2005-08-30

    申请人： Makoto Takemura ,  Yasuo Fukuda ,  Kazuaki Souda ,  Junichiro Iwahashi ,  Koichi Okuda

    发明人： Makoto Takemura ,  Yasuo Fukuda ,  Kazuaki Souda ,  Junichiro Iwahashi ,  Koichi Okuda

    IPC分类号： B08B6/00 ,  C25F1/00 ,  C25F3/30

    CPC分类号： H01L21/02052 ,  B08B3/04 ,  B08B2203/005 ,  H01L21/304

    摘要： In the ozone water treatment process, the silicon wafer is treated with the first ultra-pure water that includes ozone. The first ultra-pure water is refined by the ultraviolet ray sterilization method. The first ultra-pure water includes total organic carbon content of more than 1 μg/liter and not more than 20 μg/liter, so that the silicon wafer of the predetermined degree of cleanliness is obtained. The silicon wafer is treated by using the second ultra-pure water that has a lower TOC value than the first ultra-pure water in the ultra-pure water rinsing process (including the chemical solution cleaning process as required). The second ultra-pure water is refined by the ultraviolet ray oxidization method, and includes total organic carbon content with a concentration of 1 μg/liter or less. Thus the silicon wafer of the predetermined degree of cleanliness is obtained.

    摘要翻译： 在臭氧水处理工艺中，用包含臭氧的第一超纯水处理硅晶片。 第一超纯水通过紫外线灭菌法精制。 第一超纯水的总有机碳含量大于1μg/升且不大于20μg/升，从而获得预定清洁度的硅晶片。 在超纯水冲洗过程（包括所需的化学溶液清洗过程）中，使用具有比第一超纯水低的TOC值的第二超纯水处理硅晶片。 第二超纯水通过紫外线氧化法精制，其总有机碳含量为1μg/升以下。 因此，获得了预定清洁度的硅晶片。

    Substrate treatment apparatus and substrate treatment method
    7.
    发明授权
    Substrate treatment apparatus and substrate treatment method 有权
    基板处理装置及基板处理方法

    公开(公告)号：US07494549B2

    公开(公告)日：2009-02-24

    申请号：US10631797

    申请日：2003-07-31

    申请人： Atsuro Eitoku

    发明人： Atsuro Eitoku

    IPC分类号： B08B3/00 ,  B08B3/02 ,  B08B3/04 ,  B08B3/08 ,  B08B7/00 ,  B08B7/04

    CPC分类号： H01L21/02052 ,  B08B3/02 ,  B08B3/08 ,  B08B3/12 ,  B08B2203/005 ,  B08B2203/0288 ,  C23F1/18 ,  H01L21/67051 ,  H01L21/6708 ,  Y10S134/902

    摘要： A substrate treatment apparatus for removing an unnecessary substance from a surface of a substrate. The apparatus is provided with: an oxidation liquid supply mechanism for supplying an oxidation liquid having an oxidative effect to the substrate surface; a physical cleaning mechanism for physically cleaning the substrate surface; and an etching liquid supply mechanism for supplying an etching liquid having an etching effect to the substrate surface. It is preferred to physically clean the substrate surface while supplying the oxidation liquid to the substrate surface.

    摘要翻译： 一种用于从基板的表面去除不需要的物质的基板处理装置。 该设备具有：氧化液供给机构，用于将具有氧化作用的氧化液体供给到基板表面; 用于物理清洁衬底表面的物理清洁机构; 以及用于向衬底表面提供具有蚀刻效果的蚀刻液的蚀刻液供给机构。 优选在将氧化液体供给到基板表面的同时物理地清洁基板表面。

    CLEANING METHOD FOR DUV OPTICAL ELEMENTS TO EXTEND THEIR LIFETIME
    9.
    发明申请
    CLEANING METHOD FOR DUV OPTICAL ELEMENTS TO EXTEND THEIR LIFETIME 审中-公开
    用于DUV光学元件的清洁方法来延长寿命

    公开(公告)号：US20090035586A1

    公开(公告)日：2009-02-05

    申请号：US12180849

    申请日：2008-07-28

    申请人： Micheal J. Cangemi ,  Jiangwei Feng ,  Cindy J. Hayden ,  Robert Sabia ,  Horst Schreiber ,  Jue Wang

    发明人： Micheal J. Cangemi ,  Jiangwei Feng ,  Cindy J. Hayden ,  Robert Sabia ,  Horst Schreiber ,  Jue Wang

    IPC分类号： B08B6/00 ,  B01J19/10 ,  B32B9/00

    CPC分类号： B08B3/12 ,  B08B7/0035 ,  B08B7/028 ,  B08B2203/005 ,  G02B1/02 ,  G02B1/105 ,  G02B1/14

    摘要： The invention is directed to a method for cleaning surfaces of optical elements made from metal fluoride single crystals of formula MF2, where M is calcium, barium, magnesium, or strontium, or mixtures of the foregoing, prior to coating the elements with films of protective materials; and to a DUV optic made using the foregoing method. The method has at least the steps of: (a) immersing the optical element in at least one selected liquid and utilizing sonication at megasonic frequencies to remove particulates, polishing slurry residue and the damaged top layer of the optical element; (b) cleaning in a gas phase cleaning process whereby hydrocarbons are removed from the surface of the optical element using UV/ozone cleaning; and (c) exposing, in a gas phase process, of the optical element's surface to a low-energy plasma containing argon and oxygen, xenon and oxygen, or fluorine in a vacuum environment.

    摘要翻译： 本发明涉及一种用于清洁由MF2金属氟化物单晶制成的光学元件的表面的方法，其中M是钙，钡，镁或锶，或前述物质的混合物，在将元件与保护膜 材料; 以及使用上述方法制造的DUV光学器件。 该方法至少具有以下步骤：（a）将光学元件浸入至少一个所选择的液体中，并利用超声波以超声波频率去除微粒，抛光浆料残留物和损坏的光学元件的顶层; （b）在气相清洗过程中进行清洗，由此使用UV /臭氧清洁从光学元件的表面除去烃类; 和（c）在气相工艺中将光学元件表面暴露于在真空环境中含有氩和氧，氙和氧或氟的低能量等离子体。

    Apparatus and method for treating surfaces of semiconductor wafers using ozone
    10.
    发明授权
    Apparatus and method for treating surfaces of semiconductor wafers using ozone 失效
    使用臭氧处理半导体晶片表面的设备和方法

    公开(公告)号：US07258124B2

    公开(公告)日：2007-08-21

    申请号：US11335948

    申请日：2006-01-20

    申请人： In Kwon Jeong ,  Yong Bae Kim ,  Jungyup Kim

    发明人： In Kwon Jeong ,  Yong Bae Kim ,  Jungyup Kim

    IPC分类号： B08B3/00

    CPC分类号： H01L21/02046 ,  B08B3/02 ,  B08B3/08 ,  B08B2203/005 ,  H01L21/02238 ,  H01L21/31662 ,  H01L21/67051

    摘要： An apparatus and method for treating surfaces of semiconductor wafers with a reactive gas, such as ozone, utilizes streams of gaseous material ejected from a gas nozzle structure to create depressions on or holes through a boundary layer of processing fluid formed on a semiconductor wafer surface to increase the amount of reactive gas that reaches the wafer surface through the boundary layer. The apparatus and method may be used to clean a semiconductor wafer surface and/or grow an oxide layer on the wafer surface by oxidation.

    摘要翻译： 用诸如臭氧的反应性气体处理半导体晶片的表面的设备和方法利用从气体喷嘴结构喷出的气态物流，以在半导体晶片表面上形成的处理流体的边界层上形成凹坑， 增加通过边界层到达晶片表面的反应气体的量。 该设备和方法可用于通过氧化来清洁半导体晶片表面和/或在晶片表面上生长氧化物层。