公开(公告)号：US20140273409A1

公开(公告)日：2014-09-18

申请号：US13828926

申请日：2013-03-14

申请人： MEMC ELECTRONIC MATERIALS, INC.

发明人： John Allen Pitney ,  Manabu Hamano

IPC分类号： C23C16/455 ,  H01L21/02

CPC分类号： C23C16/45578 ,  C23C16/455 ,  C23C16/45563 ,  C23C16/45565 ,  C23C16/45585 ,  C23C16/45587 ,  C23C16/45589 ,  H01L21/02532 ,  H01L21/0262

摘要： In one aspect, a system for depositing a layer on a substrate is provided. The system includes a processing chamber, a gas injecting port, a gas distribution plate, and a plug. The gas injecting port is disposed upstream from the processing chamber. The gas distribution plate is disposed between the gas injecting port and the processing chamber, and includes an elongate planar body and an array of holes therein. The plug is sized to be received within one of the holes, and includes an orifice therethrough for permitting the passage of gas. The plug is capable of being removably secured to the gas distribution plate within one of the holes.

摘要翻译： 在一个方面，提供了一种用于在衬底上沉积层的系统。 该系统包括处理室，气体注入口，气体分布板和塞子。 气体注入口设置在处理室的上游。 气体分布板设置在气体注入口和处理室之间，并且包括细长平面体和其中的孔阵列。 插头的尺寸被设计成容纳在其中一个孔内，并且包括通孔以允许气体通过。 插头能够可拆卸地固定在其中一个孔内的气体分配板上。

公开(公告)号：US20120180954A1

公开(公告)日：2012-07-19

申请号：US13251663

申请日：2011-10-03

申请人： Jang-Gyoo Yang ,  Matthew L. Miller ,  Xinglong Chen ,  Kien N. Chuc ,  Qiwei Liang ,  Shankar Venkataraman ,  Dmitry Lubomirsky

发明人： Jang-Gyoo Yang ,  Matthew L. Miller ,  Xinglong Chen ,  Kien N. Chuc ,  Qiwei Liang ,  Shankar Venkataraman ,  Dmitry Lubomirsky

IPC分类号： C23F1/02 ,  C23C16/458 ,  C23C16/455 ,  C23C16/50

CPC分类号： H05H1/24 ,  C23C16/45565 ,  C23C16/45585 ,  H01J37/32091 ,  H01J37/32357 ,  H01J37/32422 ,  H01J37/3244 ,  H01J37/32449 ,  H01J37/32532 ,  H01J37/32541 ,  H01J37/32568 ,  H01J37/32724 ,  H01L21/02274

摘要： Substrate processing systems are described that have a capacitively coupled plasma (CCP) unit positioned inside a process chamber. The CCP unit may include a plasma excitation region formed between a first electrode and a second electrode. The first electrode may include a first plurality of openings to permit a first gas to enter the plasma excitation region, and the second electrode may include a second plurality of openings to permit an activated gas to exit the plasma excitation region. The system may further include a gas inlet for supplying the first gas to the first electrode of the CCP unit, and a pedestal that is operable to support a substrate. The pedestal is positioned below a gas reaction region into which the activated gas travels from the CCP unit.

摘要翻译： 描述了具有位于处理室内的电容耦合等离子体（CCP）单元的衬底处理系统。 CCP单元可以包括形成在第一电极和第二电极之间的等离子体激发区域。 第一电极可以包括允许第一气体进入等离子体激发区域的第一多个开口，并且第二电极可以包括允许活化气体离开等离子体激发区域的第二多个开口。 该系统还可以包括用于将第一气体供应到CCP单元的第一电极的气体入口和可操作以支撑衬底的基座。 基座位于气体反应区域的下方，活性气体从CCP单元行进。

公开(公告)号：US20020069826A1

公开(公告)日：2002-06-13

申请号：US09952881

申请日：2001-09-15

申请人： Shipley Company, L.L.C.

发明人： Andrew T. Hunt ,  Wayne Neilson ,  Miodrag Oljaca ,  Edward J. Reardon ,  Tzyy-Jiuan Jan Hwang ,  William D. Danielson JR. ,  James D. Huggins ,  David E. Bane ,  Ian H. Campbell ,  Yibin Xue

IPC分类号： C23C016/00

CPC分类号： C23C16/45563 ,  C23C16/4412 ,  C23C16/453 ,  C23C16/45578 ,  C23C16/45585 ,  C23C16/45589 ,  C23C16/45591 ,  C23C16/545

摘要： A continuous feed coater for coating a length of substrate with vaporized or sprayed material, is disclosed. A specific example is a roll-to-roll coater which includes two lower supply rollers for supporting two webs of uncoated material, and two upper take-up rollers for supporting the webs after they are coated. A central web-support forms a plenum that acts as a deposition chimney or chamber by bringing the two webs into close proximity to each other to form two large walls of the plenum. The ends of the webs are sealed using side dams to form the chimney with a rectangular cross section such that the vapor cannot exit from the edges of the material. The vaporized coating constituents to be deposited on the rolled material are directed into the deposition plenum from a coating material supply source located at the bottom of the plenum, and are exhausted through the top of the plenum. By providing a plenum having two large surface area walls formed of the material to be coated, an extremely efficient coating system is provided. The top of the plenum includes an exhaust system with an orifice plate with a plurality of orifices spaced across the width of the deposition plenum. These orifices restrict gas exhaust to provide the gas and vapor residence time for the materials being used. By further controlling the orifices relative to each other, the differential pressure across the width of the chamber can be controlled to further provide an even coating across the width of the two webs of substrate material. Two different web-handling embodiments are disclosed as is a solid substrate system.

摘要翻译： 公开了一种用蒸发或喷射材料涂覆一段衬底的连续进料涂布机。 一个具体的例子是卷对卷涂布机，其包括用于支撑两个未涂覆材料的两个下供应辊和两个用于在涂布之后支撑网的上卷取辊。 中央腹板支撑件形成通过使两个腹板彼此靠近以形成气室的两个大壁的作为沉积烟囱或腔的充气室。 使用侧坝将腹板的端部密封以形成具有矩形横截面的烟囱，使得蒸气不能从材料的边缘排出。 要沉积在轧制材料上的蒸发的涂层组分从位于集气室底部的涂料供应源引入沉积室，并通过气室的顶部排出。 通过提供具有由待涂覆材料形成的两个大的表面积壁的增压室，提供了非常有效的涂层系统。 增压室的顶部包括具有孔板的排气系统，孔板具有跨过沉积室的宽度间隔开的多个孔口。 这些孔限制排气，为所用材料提供气体和蒸气停留时间。 通过相对于彼此进一步控制孔口，可以控制腔室宽度上的压差，以进一步在两个基片材料幅材的宽度上提供均匀的涂层。 公开了两种不同的纸幅处理实施例，就像固体基板系统一样。

公开(公告)号：US4689247A

公开(公告)日：1987-08-25

申请号：US863929

申请日：1986-05-15

申请人： Mitchell E. Doty ,  Thom V. Bernitsky

发明人： Mitchell E. Doty ,  Thom V. Bernitsky

IPC分类号： C03C17/22 ,  C23C16/44 ,  C23C16/455 ,  H01L31/18 ,  B05D5/12

CPC分类号： C23C16/45506 ,  C03C17/22 ,  C23C16/45585 ,  H01L31/18 ,  H01L31/1828 ,  C03C2217/288 ,  C03C2217/289 ,  C03C2218/112 ,  Y02E10/543

摘要： Process and apparatus are disclosed for forming excellent quality, large area thin films essentially without discontinuities and inhomogenuities, particularly for photovoltaic solar cells. The reactants are conducted past a heated substrate in a relatively thin gap, e.g., 0.030 inch, in a turbulent flow. In a specific embodiment, the reactants are contained in nebuli of an atomized solution, and the nebuli are sorted, preferably by gravity, prior to introduction thereof into the gap to prevent introduction of larger size nebuli into the reaction gap.

摘要翻译： 公开了用于形成基本上没有不连续性和不均匀性，特别是用于光伏太阳能电池的优质，大面积薄膜的方法和装置。 反应物在湍流中通过比较薄的间隙（例如0.030英寸）的加热衬底进行。 在具体实施方案中，反应物包含在雾化溶液的溶液中，并且优选通过重力将所述反应物排入间隙中，以防止将较大尺寸的泡沫引入反应间隙中。

公开(公告)号：US4504526A

公开(公告)日：1985-03-12

申请号：US535798

申请日：1983-09-26

申请人： Peter H. Hofer ,  Eberhard R. Albach

发明人： Peter H. Hofer ,  Eberhard R. Albach

IPC分类号： C23C16/44 ,  C03C17/00 ,  C23C16/455 ,  C23C16/54 ,  C23C11/00 ,  C23C13/00

CPC分类号： C23C16/45504 ,  C03C17/002 ,  C23C16/45582 ,  C23C16/45585 ,  C23C16/45591 ,  C23C16/45595

摘要： The present invention relates to an apparatus and method for directing a constant velocity laminar flow of a fluid along a surface of a planar substrate. The apparatus comprises a plurality of serially arranged, individual passageways interconnecting an inlet and an outlet. The inlet is adapted to be connected to a supply of fluid, while the outlet is positioned adjacent the surface of the substrate for directing the uniform laminar flow of fluid onto the substrate surface. The individual passageways are adapted to vary the velocity of the fluid as it passes through the passageways to ensure that a laminar flow of constant velocity is produced along the surface of the substrate. In the preferred embodiment of the invention, the apparatus is utilized to apply a metal oxide coating to a sheet of moving glass. In these instances, the outlet is an elongate nozzle extending transversely relative to the path of the moving glass to enable a gaseous reactant utilized to form the metal oxide coating to be applied across the entire width of the glass sheet. In one embodiment of the invention, the individual passageways are alternating converging and diverging passageways which function to evenly distribute the fluid within the passageways such that the fluid exits the elongate outlet at a relatively constant velocity to produce a uniform laminar flow of the gaseous reactant across the glass sheet.

摘要翻译： 本发明涉及一种用于沿着平面基板的表面引导流体的恒定速度层流的装置和方法。 该装置包括多个串联布置的独立通道，其互连入口和出口。 入口适于连接到流体供应源，同时出口邻近基板的表面定位，以将流体的均匀层流引导到基板表面上。 各个通道适于在流体通过通道时改变流体的速度，以确保沿衬底的表面产生恒定速度的层流。 在本发明的优选实施例中，该装置用于将金属氧化物涂层施加到移动玻璃板上。 在这些情况下，出口是相对于移动玻璃的路径横向延伸的细长喷嘴，以使得能够形成金属氧化物涂层的气态反应物在玻璃板的整个宽度上施加。 在本发明的一个实施例中，各个通道是交替的会聚和发散通道，其功能是使流体在通道内均匀分布，使得流体以相对恒定的速度离开细长出口以产生气态反应物的均匀层流 玻璃板。

公开(公告)号：US20150214009A1

公开(公告)日：2015-07-30

申请号：US14164182

申请日：2014-01-25

申请人： Yuri GLUKHOY

发明人： Yuri GLUKHOY

IPC分类号： H01J37/32 ,  H01L21/67

CPC分类号： H01J37/3244 ,  C23C16/4404 ,  C23C16/45565 ,  C23C16/45572 ,  C23C16/45585 ,  C23C16/50 ,  C23C16/505 ,  C23C16/509 ,  C23C16/5096 ,  H01J37/32091 ,  H01J37/32449 ,  H01J37/32477

摘要： Proposed is a showerhead-cooler system of a semiconductor-processing chamber with uniform distribution of plasma density. The showerhead has a plurality of through gas holes that are coaxial with respective channels of the gas-feeding cooler plate. On the gas inlet side, the though passages of the showerhead are provided with unequal conical nozzles characterized by a central angle that decreases from the peripheral part of the showerhead to the showerhead center. Such design provides uniformity of plasma density. Furthermore, in order to protect the walls of the nozzle and the walls of the gas holes from erosion that may be caused by the hollow-cathode phenomenon, these areas are coated with a thin protective coating that is resistant to electrical breakdown and chemical corrosion.

摘要翻译： 提出了具有均匀分布的等离子体密度的半导体处理室的喷头冷却器系统。 喷头具有与供气冷却器板的相应通道同轴的多个通气孔。 在气体入口侧，喷头的通道设置有不等的锥形喷嘴，其特征在于从喷头的周边部分到喷头中心减小的中心角。 这种设计提供等离子体密度的均匀性。 此外，为了保护喷嘴的壁和气孔的壁免受可能由中空阴极现象引起的侵蚀，这些区域涂覆有耐电击穿和化学腐蚀的薄保护涂层。

公开(公告)号：US08920565B2

公开(公告)日：2014-12-30

申请号：US12270867

申请日：2008-11-14

申请人： Masaki Ueno ,  Eiryo Takasuka

发明人： Masaki Ueno ,  Eiryo Takasuka

IPC分类号： C23C16/00 ,  C23C16/50 ,  C23F1/00 ,  H01L21/306 ,  C23C16/455 ,  C30B25/08 ,  C23C16/30

CPC分类号： C23C16/45585 ,  C23C16/303 ,  C23C16/45504 ,  C30B25/08

摘要： Affords MOCVD reactors with which, while deposited films are uniformized in thickness, film deposition efficiency can be improved. An MOCVD reactor (1) is furnished with a susceptor (5) and a duct (11). The susceptor (5) has a carrying surface for heating and carrying substrates (20). The duct (11) is for conducting reaction gas (G) to the substrates (20). The susceptor (5) is rotatable with the carrying surface fronting on the duct (11) interior. The duct (11) has channels (11b) and (11c), which merge on the duct end upstream of Point A4. The height of the duct (11) running along the reaction gas (G) flow direction monotonically diminishes heading toward the duct downstream end from Point P1 to Point P2, stays constant from Point P2 to Point P3, and monotonically diminishes heading downstream from Point P3. Point P1 lies upstream of Point A4, while Point P3 lies on the susceptor (5).

摘要翻译： 提供MOCVD反应器，尽管沉积膜的厚度均匀化，但是可以提高膜沉积效率。 MOCVD反应器（1）配备有基座（5）和导管（11）。 基座（5）具有用于加热和承载基板（20）的承载表面。 管道（11）用于将反应气体（G）传导到基板（20）。 基座（5）能够随着在导管（11）内部的承载表面旋转。 管道（11）具有通道（11b）和（11c），其在点A4上游的管道端部合并。 沿着反应气体（G）流动方向运行的管道（11）的高度单调地减小从点P1到点P2的管道下游端的朝向，从点P2到点P3保持恒定，并且单调地减小从点P3的下游 。 点P1位于点A4的上游，而点P3位于基座（5）上。

公开(公告)号：US20130153148A1

公开(公告)日：2013-06-20

申请号：US13773067

申请日：2013-02-21

申请人： Applied Materials, Inc.

发明人： Jang-Gyoo Yang ,  Matthew L. Miller ,  Xinglong Chen ,  Kien N. Chuc ,  Qiwei Liang ,  Shankar Venkataraman ,  Dmitry Lubomirsky

IPC分类号： H05H1/24

CPC分类号： H05H1/24 ,  C23C16/45565 ,  C23C16/45585 ,  H01J37/32091 ,  H01J37/32357 ,  H01J37/32422 ,  H01J37/3244 ,  H01J37/32449 ,  H01J37/32532 ,  H01J37/32541 ,  H01J37/32568 ,  H01J37/32724 ,  H01L21/02274

摘要： Substrate processing systems are described that have a capacitively coupled plasma (CCP) unit positioned inside a process chamber. The CCP unit may include a plasma excitation region formed between a first electrode and a second electrode. The first electrode may include a first plurality of openings to permit a first gas to enter the plasma excitation region, and the second electrode may include a second plurality of openings to permit an activated gas to exit the plasma excitation region. The system may further include a gas inlet for supplying the first gas to the first electrode of the CCP unit, and a pedestal that is operable to support a substrate. The pedestal is positioned below a gas reaction region into which the activated gas travels from the CCP unit.

摘要翻译： 描述了具有位于处理室内的电容耦合等离子体（CCP）单元的衬底处理系统。 CCP单元可以包括形成在第一电极和第二电极之间的等离子体激发区域。 第一电极可以包括允许第一气体进入等离子体激发区域的第一多个开口，并且第二电极可以包括允许活化气体离开等离子体激发区域的第二多个开口。 该系统还可以包括用于将第一气体供应到CCP单元的第一电极的气体入口和可操作以支撑衬底的基座。 基座位于气体反应区域的下方，活性气体从CCP单元行进。

公开(公告)号：US20120085278A1

公开(公告)日：2012-04-12

申请号：US13157250

申请日：2011-06-09

申请人： Mehrdad M. Moslehi ,  Karl-Josef Kramer ,  Jay Ashjaee ,  George D. Kamian ,  David Mordo ,  Takao Yonehara

发明人： Mehrdad M. Moslehi ,  Karl-Josef Kramer ,  Jay Ashjaee ,  George D. Kamian ,  David Mordo ,  Takao Yonehara

IPC分类号： C30B23/06 ,  H01L21/673 ,  C30B23/02 ,  C23C16/455 ,  C23C16/46

CPC分类号： H01L21/67754 ,  C23C16/45585 ,  C23C16/481 ,  C23C16/54 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/6719 ,  H01L21/67757

摘要： High productivity thin film deposition methods and tools are provided wherein a thin film semiconductor material layer with a thickness in the range of less than 1 micron to 100 microns is deposited on a plurality of wafers in a reactor. The wafers are loaded on a batch susceptor and the batch susceptor is positioned in the reactor such that a tapered gas flow space is created between the susceptor and an interior wall of the reactor. Reactant gas is then directed into the tapered gas space and over each wafer thereby improving deposition uniformity across each wafer and from wafer to wafer.

摘要翻译： 提供了高生产率薄膜沉积方法和工具，其中厚度在小于1微米至100微米范围内的薄膜半导体材料层沉积在反应器中的多个晶片上。 将晶片装载在分批基座上，并且批量基座位于反应器中，使得在基座和反应器的内壁之间形成锥形气体流动空间。 然后将反应性气体引导到锥形气体空间中并遍及每个晶片，从而改善每个晶片和从晶片到晶片的沉积均匀性。

公开(公告)号：US5173336A

公开(公告)日：1992-12-22

申请号：US643400

申请日：1991-01-22

申请人： Adam M. Kennedy

发明人： Adam M. Kennedy

IPC分类号： C23C16/44 ,  C23C16/455 ,  C30B25/14

CPC分类号： C23C16/45504 ,  C23C16/45508 ,  C23C16/45585 ,  C23C16/45591 ,  C30B25/14

摘要： A semiconductor substrate or other object (32) for vapor deposition is mounted on a susceptor disk (16) which rotates about a vertical axis. Chemical vapor flows downwardly through a passageway (14) onto the object (32). A radial space (14a) is provided between the periphery of the disk (16) and an adjacent inner wall (12a) of the passageway (14). Rotation of the disk (16) urges a portion of the vapor flow (60) to be deflected from the disk (16) and the wall (12a) of the passageway (14) upwardly to cause deleterious recirculation of the vapor above the disk (16). A flow guide (52) disposed in the passageway (14) above the disk (16) has an upstream converging section (52a) which causes the flow (56) of vapor to accelerate, and a downstream diverging section (52b) which causes the accelerated flow (58) to expand downwardly and radially outwardly so as to interact with, and prevent upward movement of the deflected portion of the flow (60) and thereby suppress recirculation of the vapor.

摘要翻译： 用于气相沉积的半导体衬底或其它物体（32）安装在围绕垂直轴旋转的基座盘（16）上。 化学蒸气向下流过通道（14）到物体（32）上。 径向空间（14a）设置在盘（16）的周边和通道（14）的相邻内壁（12a）之间。 盘（16）的旋转促使蒸汽流（60）的一部分从盘（16）和通道（14）的壁（12a）向上偏转以引起盘上方的蒸气的有害再循环（ 16）。 设置在盘（16）上方的通道（14）中的流动引导件（52）具有使蒸气流（56）加速的上游会聚部分（52a），以及下游发散部分（52b） 加速流动（58）向下并径向向外膨胀以与流动（60）的偏转部分相互作用并防止向上运动，从而抑制蒸汽的再循环。