摘要:
In some embodiments, techniques are described for combining an X-ray detector (e.g., for providing EPMA) and an electron detector (e.g., for providing AES) to provide a tool for determining film compositions and thicknesses on a specimen, such as a semiconductor structure or wafer. In one embodiment, a system includes a beam generator configurable to direct a beam towards a specimen. The electron beam may generate Auger electrons and X-rays. The system may also include at least one electron detector disposed adjacent to (e.g., above) the specimen to detect electrons and measure their energies emanating from a top layer of the specimen. One or more X-ray detectors may be disposed adjacent to the specimen to detect X-rays.
摘要:
A method and the instrument for characterization of the defects on a surface with Auger electron spectroscopy in a high vacuum environment are disclosed. Defects on the surface of a sample may be characterized with Auger electron spectroscopy in a high vacuum environment at a pressure of about 10−7 Torr to 10−6 Torr.
摘要:
A method of Auger Electron Spectroscopic (AES) analysis for a surface of an insulating sample. The method is characterized by performing an AES analysis after depositing a conductive layer of a designated thickness on the surface of a sample containing an insulating layer by means of an ion beam sputtering for the purpose of the preventing charge accumulation. The conductive layer preferably is deposited to have a thickness of at least 6 .ANG. to 50 .ANG. and a beam voltage used for applying the conductive layer is at least 3 Kev. The conductive layer is made of any of iridium(Ir), chrome(Cr) and gold(Au). Because any electron charge generated on the sample is discharged via the conductive layer, the AES analysis can be performed for a sample containing an insulating layer.
摘要:
System and methods for decomposing an Auger electron spectrum into elemental and chemical components, includes conditioning and input spectrum to generate a normalized input spectrum; determining statistical correlation between the normalized input spectrum and stored elemental spectral signatures; and characterizing elemental or chemical species in the input spectrum from the statistical correlation, wherein said conditioning the input spectrum includes estimating a background signal of non-Auger electrons in the input spectrum and subtracting the estimated background signal from the input spectrum.
摘要:
An apparatus for treatment of a sample for the manufacture of integrated circuits includes a holder apparatus and a stage which is coupled to the holder apparatus. The stage is capable of holding a portion of a sample to be analyzed. The apparatus also includes a shield that is operably coupled to the stage to block a portion of the sample. The shield is capable of movement relative to the sample to block one or more portions of the sample. The shield is provided on a track member and is movable from a first spatial location to a second spatial location on the track member. The apparatus further includes an enclosure surrounding an entirety of the sample and the shield.
摘要:
A system and method for measuring the thickness of an ultra-thin multi-layer film on a substrate is disclosed. A physical model of an ultra-thin multilayer structure and Auger electron emission from the nano-multilayer structure is built. A mathematical model for the Auger Electron Spectroscopy (AES) measurement of the multilayer thin film thickness is derived according to the physical model. Auger electron spectroscopy (AES) is first performed on a series of calibration samples. The results are entered into the mathematical model to determine the parameters in the mathematical equation. The parameters may be calibrated by the correlation measurements of the alternate techniques. AES analysis is performed on the ultra-thin multi-layer film structure. The results are entered into the mathematical model and the thickness is calculated.
摘要:
A system for providing a compensated Auger spectrum, the system includes: a processor, adapted to generate a compensated Auger spectrum in response to a non-compensated Auger spectrum and in response to an electric potential related parameter; and an interface to a electron detector that is adapted to detect electrons emitted from the first area, wherein the interface is connected to the processor, and wherein the electric potential related parameter reflects a state of a first area of an object that was illuminated by a charged particle beam during the generation of the non-compensated Auger spectrum.
摘要:
A high space resolving power of the scanning type probe microscope combined with an element analysis and the chemical bond condition analyzing ability of an Auger electronic spectroscopic method, and the energy analyzing results of the Auger electron generated by the high energy electron projection are considered, whereby it is possible to determine the three dimensional coordinate of the atomic nucleus of one atom of the surface, analyze the element thereof and analyze the chemical bond condition. While during the inherent operation of the scanning type probe microscope which may observe the atomic order image or in stopping the operation thereof, a super short AC or DC high voltage pulse is once or repeatedly applied between the probe and the sample, so that valent electron spherically symmetrically distributed about a nucleus or an internal shell electron of the sample is excited, and an energy analysis and a counter analysis of a photon or an Auger electron discharged in accordance with the excitation is performed. A determination of a three-dimensional coordinates of a nucleus for every one atom of the surface of the sample, the element analysis thereof, and a measurement of a surface distribution concerning a chemical bond condition analysis are carried out to obtain an atomic image of the surface of the sample including element and chemical bond information.
摘要:
A light source directs ultraviolet light onto a test surface and a detector detects a current of photoelectrons generated by the light. The detector includes a collector which is positively biased with respect to the test surface. Quality is indicated based on the photoelectron current. The collector is then negatively biased to replace charges removed by the measurement of a nonconducting substrate to permit subsequent measurements. Also, the intensity of the ultraviolet light at a particular wavelength is monitored and the voltage of the light source varied to maintain the light a constant desired intensity. The light source is also cooled via a gas circulation system. If the test surface is an insulator, the surface is bombarded with ultraviolet light in the presence of an electron field to remove the majority of negative charges from the surface. The test surface is then exposed to an ion field until it possesses no net charge. The technique described above is then performed to assess quality.
摘要:
An analysis method includes: acquiring a photoelectron spectrum and an X-ray-excited Auger spectrum, the photoelectron spectrum being obtained by detecting photoelectrons emitted from a specimen by irradiating the specimen with X-rays, and the X-ray-excited Auger spectrum being obtained by detecting Auger electrons emitted from the specimen by irradiating the specimen with X-rays; calculating a quantitative value of each element included in the specimen based on the photoelectron spectrum; and performing a curve fitting process on the X-ray-excited Auger spectrum by using an electron beam-excited Auger electron standard spectrum, and calculating a quantitative value of an analysis target element in each chemical bonding state included in the specimen.