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公开(公告)号：US11747704B2
公开(公告)日：2023-09-05
申请号：US17731369
申请日：2022-04-28
Applicant: Raytheon BBN Technologies Corp.
Inventor： Moe Soltani , Jeffrey Laroche , Thomas Kazior
CPC classification number: G02F1/225 , G02F1/0018 , G02F1/0316 , G02F1/0152
Abstract: An electro-optical modulator assembly including a transistor including a gate, a drain, and a source disposed on a substrate, a photonic modulator including a first waveguide structure positioned between a first electrode and a second electrode, the photonic modulator being integrated with the transistor on the substrate, and a metal connection coupled between the drain of the transistor and one of the first and second electrodes of the photonic modulator.
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公开(公告)号：US20230408885A1
公开(公告)日：2023-12-21
申请号：US18241715
申请日：2023-09-01
Applicant: Raytheon BBN Technologies Corp.
Inventor： Moe Soltani , Jeffrey Laroche , Thomas Kazior
CPC classification number: G02F1/225 , G02F1/0018 , G02F1/0316 , G02F1/0152
Abstract: An electro-optical modulator assembly including a transistor including a gate, a drain, and a source disposed on a substrate, a photonic modulator including a first waveguide structure positioned between a first electrode and a second electrode, the photonic modulator being integrated with the transistor on the substrate, and a metal connection coupled between the drain of the transistor and one of the first and second electrodes of the photonic modulator.
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公开(公告)号：US20240231132A9
公开(公告)日：2024-07-11
申请号：US17970020
申请日：2022-10-20
Applicant: Nokia Solutions and Networks Oy
Inventor： Jianfeng Ding
CPC classification number: G02F1/0152 , G02F1/212 , G02F1/2257 , G02F2203/50
Abstract: An apparatus includes a silicon (Si) optical phase shifter. In an embodiment, the optical phase shifter comprises a planar optical waveguide having a silicon optical core, and a pair of biasing electrodes located along opposite sides of a segment of the silicon optical core. The segment of the silicon optical core comprises a series of p-n junctions. The series extends in a direction transverse to an optical propagation direction in a segment of the planar optical waveguide including the segment of the silicon optical core. At least two of the p-n junctions are configured to be reverse biased by applying a voltage across the biasing electrodes.
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公开(公告)号：US11886056B2
公开(公告)日：2024-01-30
申请号：US17456468
申请日：2021-11-24
Applicant: Cisco Technology, Inc.
Inventor： Donald Adams , Prakash B. Gothoskar , Vipulkumar Patel , Mark Webster
CPC classification number: G02F1/025 , G02B6/132 , G02B6/136 , G02F1/011 , G02F1/2257 , G02F1/0152
Abstract: An optical modulator may include a lower waveguide, an upper waveguide, and a dielectric layer disposed therebetween. When a voltage potential is created between the lower and upper waveguides, these layers form a silicon-insulator-silicon capacitor (also referred to as SISCAP) guide that provides efficient, high-speed optical modulation of an optical signal passing through the modulator. In one embodiment, at least one of the waveguides includes a respective ridge portion aligned at a charge modulation region which may aid in confining the optical mode laterally (e.g., in the width direction) in the optical modulator. In another embodiment, ridge portions may be formed on both the lower and the upper waveguides. These ridge portions may be aligned in a vertical direction (e.g., a thickness direction) so that ridges overlap which may further improve optical efficiency by centering an optical mode in the charge modulation region.
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公开(公告)号：US20240134215A1
公开(公告)日：2024-04-25
申请号：US17970020
申请日：2022-10-19
Applicant: Nokia Solutions and Networks Oy
Inventor： Jianfeng Ding
CPC classification number: G02F1/0152 , G02F1/212 , G02F1/2257 , G02F2203/50
Abstract: An apparatus includes a silicon (Si) optical phase shifter. In an embodiment, the optical phase shifter comprises a planar optical waveguide having a silicon optical core, and a pair of biasing electrodes located along opposite sides of a segment of the silicon optical core. The segment of the silicon optical core comprises a series of p-n junctions. The series extends in a direction transverse to an optical propagation direction in a segment of the planar optical waveguide including the segment of the silicon optical core. At least two of the p-n junctions are configured to be reverse biased by applying a voltage across the biasing electrodes.
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公开(公告)号：US20240094567A1
公开(公告)日：2024-03-21
申请号：US18526985
申请日：2023-12-01
Applicant: Cisco Technology, Inc.
Inventor： Donald J. ADAMS , Prakash B. GOTHOSKAR , Vipulkumar J. PATEL , Mark J. WEBSTER
CPC classification number: G02F1/025 , G02B6/132 , G02B6/136 , G02F1/011 , G02F1/2257 , G02F1/0152
Abstract: An optical modulator may include a lower waveguide, an upper waveguide, and a dielectric layer disposed therebetween. When a voltage potential is created between the lower and upper waveguides, these layers form a silicon-insulator-silicon capacitor (also referred to as SISCAP) guide that provides efficient, high-speed optical modulation of an optical signal passing through the modulator. In one embodiment, at least one of the waveguides includes a respective ridge portion aligned at a charge modulation region which may aid in confining the optical mode laterally (e.g., in the width direction) in the optical modulator. In another embodiment, ridge portions may be formed on both the lower and the upper waveguides. These ridge portions may be aligned in a vertical direction (e.g., a thickness direction) so that ridges overlap which may further improve optical efficiency by centering an optical mode in the charge modulation region.
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公开(公告)号：US20240061310A1
公开(公告)日：2024-02-22
申请号：US18386490
申请日：2023-11-02
Applicant: Raytheon BBN Technologies Corp.
Inventor： Moe Soltani , Jeffrey Laroche , Thomas Kazior
CPC classification number: G02F1/225 , G02F1/0018 , G02F1/0316 , G02F1/0152
Abstract: An electro-optical modulator assembly including a transistor including a gate, a drain, a source, and a film forming a channel layer for the transistor disposed on a substrate, a photonic modulator including a first waveguide structure positioned between a first electrode and a second electrode, the photonic modulator including a portion disposed over a portion of the transistor, and a metal connection coupled between the drain of the transistor and one of the first and second electrodes of the photonic modulator.
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公开(公告)号：US11768392B2
公开(公告)日：2023-09-26
申请号：US17959229
申请日：2022-10-03
Applicant: Ciena Corporation
Inventor： Christine Latrasse , Alexandre Delisle-Simard , Michel Poulin , Ian Betty , Arash Khajooeizadeh , Michael Vitic
CPC classification number: G02F1/025 , G02F1/2257 , G02B6/12002 , G02B6/134 , G02B2006/12061 , G02B2006/12142 , G02F1/0152 , G02F1/212
Abstract: An optical modulator includes a first Radio Frequency (RF) line and a second RF line; an optical waveguide along a length of the modulator with an input and an output; and a plurality of segments along the length including a first set of segments, a single RF line crossing, and a second set of segments, wherein the first set of segments and the second set of segments have an inversion of their respective orientation at the RF line crossing, and wherein the RF line crossing is located off center relative to the plurality of segments, wherein each of the first RF line and the second RF line extend along the length and cross one another at the RF line crossing.
