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    ELECTROABSORPTION MODULATOR FOR DEPTH IMAGING AND OTHER APPLICATIONS
    1.
    发明申请
    ELECTROABSORPTION MODULATOR FOR DEPTH IMAGING AND OTHER APPLICATIONS 审中-公开
    用于深度成像和其他应用的电解质调制器

    公开(公告)号：US20160259059A1

    公开(公告)日：2016-09-08

    申请号：US15057792

    申请日：2016-03-01

    申请人： Northwestern University

    发明人： Hooman Mohseni

    IPC分类号： G01S17/89 ,  G02F1/017 ,  G06T7/00

    CPC分类号： G01S17/89 ,  G01S7/4816 ,  G01S17/36 ,  G02F1/015 ,  G02F1/017 ,  G02F1/01725 ,  G02F2001/0155 ,  G02F2001/0157 ,  G02F2001/0175

    摘要： A TOF depth imaging system for providing a depth image of an object is provided comprising a light source configured to illuminate an object with amplitude modulated light characterized by a wavelength λ and a modulation frequency f, a surface-normal electroabsorption modulator configured to receive and to modulate reflected light from the object with the modulation frequency f, and an image sensor configured to receive and to detect modulated reflected light from the electroabsorption modulator. The electroabsorption modulator comprises a top doped layer of semiconductor, a bottom doped layer of semiconductor having opposite polarity to the top doped layer, and an active layer between the top and bottom doped layers, the active layer configured as a superlattice structure comprising multiple sublayers of semiconductor configured to provide alternating quantum wells and barriers, the active layer comprising quantum wells configured to exhibit delocalized electron-hole behavior.

    摘要翻译： 提供了一种用于提供物体的深度图像的TOF深度成像系统，包括被配置为用波长λ和调制频率f表征的调幅光照射物体的光源，表面正常电吸收调制器，被配置为接收和 以调制频率f调制来自对象的反射光，以及被配置为接收和检测来自电吸收调制器的调制反射光的图像传感器。 电吸收调制器包括半导体的顶部掺杂层，与顶部掺杂层具有相反极性的半导体的底部掺杂层，以及顶部和底部掺杂层之间的有源层，该有源层被配置为超晶格结构，该超晶格结构包括多个子层 半导体被配置为提供交替量子阱和屏障，所述有源层包括被配置为显示离域电子 - 空穴行为的量子阱。

    Optical set-reset latch
    3.
    发明授权
    Optical set-reset latch 有权
    光学设置复位锁存器

    公开(公告)号：US08363990B1

    公开(公告)日：2013-01-29

    申请号：US13071095

    申请日：2011-03-24

    申请人： Erik J. Skogen

    发明人： Erik J. Skogen

    IPC分类号： G02B6/12 ,  G02B6/13 ,  G02F1/035

    CPC分类号： H03K3/42 ,  B82Y20/00 ,  G02F1/015 ,  G02F1/01708 ,  G02F1/01725 ,  G02F3/00 ,  G02F2001/0157 ,  G02F2001/0158 ,  G02F2001/0175 ,  H01L27/15 ,  H01S5/0265 ,  H03K19/14

    摘要： An optical set-reset (SR) latch is formed from a first electroabsorption modulator (EAM), a second EAM and a waveguide photodetector (PD) which are arranged in an optical and electrical feedback loop which controls the transmission of light through the first EAM to latch the first EAM in a light-transmissive state in response to a Set light input. A second waveguide PD controls the transmission of light through the second EAM and is used to switch the first EAM to a light-absorptive state in response to a Reset light input provided to the second waveguide PD. The optical SR latch, which may be formed on a III-V compound semiconductor substrate (e.g. an InP or a GaAs substrate) as a photonic integrated circuit (PIC), stores a bit of optical information and has an optical output for the logic state of that bit of information.

    摘要翻译： 光学设置复位（SR）锁存器由第一电吸收调制器（EAM），第二EAM和波导光电检测器（PD）形成，该第一电吸收调制器（EAM），第二EAM和波导光电检测器（PD）被布置在控制通过第一EAM的光传输光 以响应于设置光输入而将第一EAM锁定在透光状态。 第二波导PD控制通过第二EAM的光的透射，并且用于响应于提供给第二波导PD的复位光输入而将第一EAM切换到光吸收状态。 可以形成在作为光子集成电路（PIC）的III-V化合物半导体衬底（例如InP或GaAs衬底）上的光学SR锁存器存储一位光学信息，并且具有用于逻辑状态的光学输出 的那一点信息。

    COUPLED QUANTUM WELL STRUCTURE
    5.
    发明申请
    COUPLED QUANTUM WELL STRUCTURE 有权
    耦合量子阱结构

    公开(公告)号：US20100245969A1

    公开(公告)日：2010-09-30

    申请号：US12377481

    申请日：2007-08-17

    申请人： Masanori Nagase ,  Ryoichi Akimoto ,  Hiroshi Ishikawa

    发明人： Masanori Nagase ,  Ryoichi Akimoto ,  Hiroshi Ishikawa

    IPC分类号： G02F1/017 ,  H01L29/12 ,  H01L29/20

    CPC分类号： G02F1/01725 ,  B82Y20/00 ,  G02F2001/01741

    摘要： In the production of optical devices or the like utilizing an intersubband transition of a coupled quantum well, a quantum well structure having strong coupling is provided. In addition, a coupled well structure of excellent productivity capable of avoiding thinning of coupling barrier layer for strengthening the coupling is provided. In the semiconductor coupled well structure of the present invention, a coupled quantum well structure disposed on the semiconductor single crystal substrate includes a coupling barrier layer 1a disposed between two or more quantum well layers 2a and 2b, wherein the coupling barrier layer 1a has an energy barrier that is smaller than an excitation level (E4 and E3) and is larger than a ground level (E2 and E1).

    摘要翻译： 在利用耦合量子阱的子带间转换的光学器件等的制造中，提供了具有强耦合的量子阱结构。 此外，提供了一种能够避免用于加强联接的耦合阻挡层变薄的优异生产率的耦合井结构。 在本发明的半导体耦合阱结构中，设置在半导体单晶衬底上的耦合量子阱结构包括设置在两个或更多个量子阱层2a和2b之间的耦合势垒层1a，其中耦合阻挡层1a具有能量 小于激发电平（E4和E3）并且大于地电平（E2和E1）的势垒。

    Layered composite film incorporating a quantum dot shift register
    7.
    发明授权
    Layered composite film incorporating a quantum dot shift register 失效
    包含量子点移位寄存器的分层复合膜

    公开(公告)号：US07659538B2

    公开(公告)日：2010-02-09

    申请号：US11144326

    申请日：2005-06-03

    申请人： Gary E. Snyder ,  Wil McCarthy

    发明人： Gary E. Snyder ,  Wil McCarthy

    IPC分类号： H01L29/06 ,  H01L31/0328 ,  H01L31/072

    CPC分类号： G11C19/38 ,  B82Y10/00 ,  B82Y20/00 ,  B82Y30/00 ,  G02F1/01725 ,  G02F1/3556 ,  G02F2001/01791 ,  H01L29/127 ,  H01L29/7888 ,  Y10S977/774

    摘要： Quantum dots are positioned within a layered composite film to produce one-dimensional and multi-dimensional shift registers within the film. Charge carriers are driven into the quantum dots by energy in connected control paths. The charge carriers are trapped in the quantum dots through quantum confinement, such that the charge carriers form artificial atoms, which serve as dopants for the surrounding materials. The atomic number of each artificial atom is adjusted through precise variations in the voltage across the quantum dot that confines it. The position of the artificial atom in the film is moved by varying the location of confinement and thus operates as a shift register.

    摘要翻译： 量子点位于分层复合膜内，以在膜内产生一维和多维移位寄存器。 电荷载体通过连接的控制路径中的能量被驱动到量子点中。 电荷载流子通过量子限制被捕获在量子点中，使得载流子形成人造原子，其用作周围材料的掺杂剂。 每个人造原子的原子数通过限制它的量子点两端的电压的精确变化来调节。 膜中的人造原子的位置通过改变限制的位置来移动，并因此作为移位寄存器来操作。