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公开(公告)号：US09658531B2
公开(公告)日：2017-05-23
申请号：US14475967
申请日：2014-09-03
摘要： A mask is disclosed which includes a plurality of first phase shift regions disposed on a first side of the mask, and a plurality of second phase shift regions disposed on a second side of the mask. The first phase shift regions and second phase shift regions may be alternating phase shift regions in which phase shift of the first phase shift regions is out of phase, for instance by 180 degrees, from phase shift of the second phase shift regions. A method for forming the mask, and a semiconductor device fabrication method using the mask is also disclosed.
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公开(公告)号：US09507252B2
公开(公告)日：2016-11-29
申请号：US14798542
申请日：2015-07-14
发明人： Akio Misaka
摘要： A photomask includes a transparent substrate, and a light shield provided to the transparent substrate. The light shield includes a translucent mask pattern opening, and the mask pattern opening includes a plurality of translucent regions which are provided to a periphery of a region corresponding to a desired pattern, and allow exposure light beams to be transmitted at at least three different phases. Each of the plurality of translucent region spaced apart from the region corresponding to the desired pattern, advances more toward an exposure object spaced a predetermined distance apart compared to a phase plane of an exposure light beam transmitted through a translucent region of the plurality of translucent regions, the translucent region close to the region corresponding to the desired pattern, such that the exposure light beams that are transmitted through the mask pattern opening form a projection image of the desired pattern on the exposure object.
摘要翻译： 光掩模包括透明基板和设置在透明基板上的遮光罩。 遮光罩包括半透明掩模图形开口，并且掩模图案开口包括设置在与期望图案对应的区域的周边的多个半透明区域，并允许曝光光束以至少三个不同的相位传播 。 与对应于期望图案的区域间隔开的多个半透明区域中的每一个与透射通过多个半透明区域的半透明区域的曝光光束的相位面相比，更靠近间隔开预定距离的曝光对象 ，靠近与期望图案对应的区域的半透明区域，使得透过掩模图案开口的曝光光束在曝光对象上形成所需图案的投影图像。
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3.发明授权Mask blank, transfer mask, method of manufacturing a transfer mask, and method of manufacturing a semiconductor device 有权掩模毛坯，转印掩模，制造转印掩模的方法以及制造半导体器件的方法公开(公告)号：US09354509B2
公开(公告)日：2016-05-31
申请号：US14222794
申请日：2014-03-24
申请人： HOYA CORPORATION
发明人： Noriyuki Sakaya , Osamu Nozawa
摘要： A mask blank is used for manufacturing a binary mask adapted to be applied with ArF excimer laser exposure light and has a light-shielding film for forming a transfer pattern on a transparent substrate. The light-shielding film has a laminated structure of a lower layer and an upper layer and has an optical density of 2.8 or more for the exposure light. The lower layer is made of a material containing tantalum and nitrogen and has a thickness of 33 nm or more. The upper layer is made of a material containing tantalum and oxygen and has a thickness of 3 nm or more. The phase difference between the exposure light transmitted through the light-shielding film and the exposure light transmitted in air for a distance equal to the thickness of the light-shielding film is 60 degrees or less.
摘要翻译： 掩模坯料用于制造适于施加ArF准分子激光曝光光的二值掩模，并且具有用于在透明基板上形成转印图案的遮光膜。 遮光膜具有下层和上层的层叠结构，并且曝光用光的密度为2.8以上。 下层由含有钽和氮的材料制成，厚度为33nm以上。 上层由含有钽和氧的材料制成，厚度为3nm以上。 透过遮光膜的曝光光与在空气中透射距离等于遮光膜的厚度的曝光光的相位差为60度以下。
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公开(公告)号：US09341940B2
公开(公告)日：2016-05-17
申请号：US14278678
申请日：2014-05-15
发明人： Wen-Chang Hsueh , Chia-Jen Chen , Ta-Cheng Lien , Hsin-Chang Lee
IPC分类号： G03F1/32
摘要： A reticle and a method of fabricating the reticle are provided. In various embodiments, the reticle includes a substrate, a patterned first attenuating layer, a patterned second attenuating layer, and a patterned third attenuating layer. The patterned first attenuating layer is disposed on the substrate. The patterned second attenuating layer is disposed on the patterned first attenuating layer. The patterned third attenuating layer is disposed on the patterned second attenuating layer. A first part of the patterned first attenuating layer, a first part of patterned second attenuating layer, and the patterned third attenuating layer are stacked on the substrate as a binary intensity mask portion.
摘要翻译： 提供了掩模版和制作掩模版的方法。 在各种实施例中，掩模版包括衬底，图案化的第一衰减层，图案化的第二衰减层和图案化的第三衰减层。 图案化的第一衰减层设置在基板上。 图案化的第二衰减层设置在图案化的第一衰减层上。 图案化的第三衰减层设置在图案化的第二衰减层上。 图案化第一衰减层的第一部分，图案化第二衰减层的第一部分和图案化的第三衰减层作为二值强度掩模部分堆叠在基板上。
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5.发明授权Phase-shift mask, manufacturing method thereof and manufacturing method of semiconductor element 失效相移掩模，其制造方法和半导体元件的制造方法公开(公告)号：US07754397B2
公开(公告)日：2010-07-13
申请号：US11812062
申请日：2007-06-14
申请人： Toshio Konishi , Yosuke Kojima , Satoru Nemoto , Jun Sasaki , Keishi Tanaka
发明人： Toshio Konishi , Yosuke Kojima , Satoru Nemoto , Jun Sasaki , Keishi Tanaka
IPC分类号： G03F1/00
摘要： A phase-shift mask including a transparent substrate, and a light-shielding film formed on the transparent substrate and provided with first apertures and second apertures which are alternately arranged. The transparent substrate is partially removed through the second apertures to form a recessed portion having a predetermined depth. Light transmitted through the first apertures and light transmitted through the second apertures are enabled to alternately invert in phase thereof. This phase-shift mask is characterized in that a phase shift of transmitted light is set in conformity with a pitch between an edge of the first aperture and an edge of the second aperture of the light-shielding film.
摘要翻译： 包括透明基板的相移掩模和形成在透明基板上并设置有交替布置的第一孔和第二孔的遮光膜。 通过第二孔部分地去除透明基板，以形成具有预定深度的凹部。 透过第一孔的光使透过第二孔的光能够相位交替反转。 该相移掩模的特征在于，透射光的相移被设定为与第一孔的边缘和遮光膜的第二孔的边缘之间的间距一致。
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6.发明授权Continuous sloped phase edge architecture fabrication technique using electron or optical beam blur for single phase shift mask ret 失效使用电子或光束模糊的连续倾斜相位架构制造技术，用于单相位移掩模公开(公告)号：US07695872B2
公开(公告)日：2010-04-13
申请号：US11894795
申请日：2007-08-20
申请人： Matt F. Vernon , Wen-Hao Cheng
发明人： Matt F. Vernon , Wen-Hao Cheng
IPC分类号： G03F1/00
摘要： A phase shift mask may include boundaries between phase shift regions with continuous sloped phase edges. The continuous sloped phase edges may be produced by introducing a predetermined degree of defocus into a beam used during production of the mask to image the pattern on the mask. Such a phase shift mask may be “trimless”, i.e., not require a corresponding binary “trim” mask for a second exposure to remove phase conflicts after exposure with the phase shift mask.
摘要翻译： 相移掩模可以包括具有连续倾斜相位边缘的相移区域之间的边界。 连续倾斜的相位边缘可以通过将预定程度的散焦引入到在制作掩模期间使用的光束中以在掩模上成像以形成图案来产生。 这样的相移掩模可以是“无偏转”的，即不需要用于第二曝光的对应的二进制“修剪”掩模，以消除用相移掩模曝光之后的相位冲突。
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公开(公告)号：US07648806B2
公开(公告)日：2010-01-19
申请号：US11670887
申请日：2007-02-02
申请人： Fei Wang
发明人： Fei Wang
IPC分类号： G03F1/00
摘要： Systems and methods are provided for use in photolithography. In one embodiment, a reticle is provided that comprises a phase shift and transmission control layer, wherein a gap in the phase shift and transmission control layer defines a line. Adjacent to the phase shift and transmission control layer is an optically transparent material, comprising a groove located within the line, wherein the groove comprises a region of reduced thickness in the optically transparent material. The region of reduced thickness serves to shift the phase of light passing through the groove, as compared to light passing through other regions of the optically transparent material. Thus, the reticle has a clear feature comprising light of two different phases.
摘要翻译： 提供了用于光刻的系统和方法。 在一个实施例中，提供了一种掩模版，其包括相移和透射控制层，其中相移和透射控制层中的间隙限定线。 与相移和透射控制层相邻的是光学透明的材料，其包括位于该线内的凹槽，其中该凹槽包括在该光学透明材料中的厚度减小的区域。 与通过光学透明材料的其它区域的光相比，厚度减小的区域用于移动通过凹槽的光的相位。 因此，光罩具有包括两个不同相的光的清晰特征。
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公开(公告)号：US07579122B2
公开(公告)日：2009-08-25
申请号：US11399288
申请日：2006-04-05
申请人： Yukio Taniguchi
发明人： Yukio Taniguchi
IPC分类号： G03F1/00
CPC分类号： G03F7/70283 , G03F1/28 , G03F1/32 , G03F7/70666
摘要： A method of exposing a surface to be exposed and an attenuated type phase shift mask for use in the method are provided herein. The attenuated type phase shift mask has a reference area allowing a light radiated from a light source to pass through and an amplitude and phase modulation area allowing a part of said light to pass through. The phase modulation amount of the amplitude and phase modulation area relative to the reference area of the attenuated type phase shift mask is {360°×n+(182° to 203°)} (n is an integer).
摘要翻译： 本文提供了一种暴露待暴露的表面的方法和用于该方法的衰减型相移掩模。 衰减型相移掩模具有允许从光源辐射的光通过的参考区域和允许所述光的一部分通过的幅度和相位调制区域。 振幅相位调制区域相对于衰减型移相掩模的基准面的相位调制量为{360°×n +（182°〜203°）}（n为整数）。
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公开(公告)号：US20090155699A1
公开(公告)日：2009-06-18
申请号：US12128617
申请日：2008-05-29
申请人： Kuo-Kuei Fu , Yuan-Hsun Wu , Ya-Chih Wang
发明人： Kuo-Kuei Fu , Yuan-Hsun Wu , Ya-Chih Wang
CPC分类号： G03F1/34 , G03F1/28 , G03F7/2022
摘要： A phase-shift mask for forming a pattern includes a glass substrate and a pattern, a first phase-shift region, a second phase-shift region and a third phase-shift region on the glass substrate. The first phase-shift region and the second phase-shift region are alternately arranged and the third phase-shift regions are formed at the terminal ends of the first phase-shift region.
摘要翻译： 用于形成图案的相移掩模包括在玻璃基板上的玻璃基板和图案，第一相移区域，第二相移区域和第三相移区域。 交替布置第一相移区域和第二相移区域，并且在第一相移区域的末端形成第三相移区域。
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10.发明授权公开(公告)号：US07541116B2
公开(公告)日：2009-06-02
申请号：US11254729
申请日：2005-10-21
申请人： Chun Yu Lin
发明人： Chun Yu Lin
IPC分类号： G03F1/00
CPC分类号： G03F1/28 , G03F1/50 , G03F7/70283
摘要： A mask at frequency domain comprises a plurality of amplitude patterns positioned on a first surface of the mask and a plurality of phase patterns positioned on a second surface of the mask. The amplitude patterns have different vertical thicknesses to change the amplitude of an exposing light, and the phase patterns have different vertical thicknesses to change the phase of the exposing light. Preferably, the amplitude patterns are made of inorganic material, such as molybdenum silicide (MoSi), and the phase patterns are made of transparent material, such as quartz. The amplitude patterns and phase patterns are the Fourier transform of a circuit layout, and their numbers and positions are correspondent with each other.
摘要翻译： 在频域处的掩模包括位于掩模的第一表面上的多个幅度图案和位于掩模的第二表面上的多个相位图案。 幅度图案具有不同的垂直厚度以改变曝光光的幅度，并且相位图案具有不同的垂直厚度以改变曝光光的相位。 优选地，幅度图案由诸如硅化钼（MoSi）的无机材料制成，并且相图由诸如石英的透明材料制成。 幅度图案和相位图案是电路布局的傅里叶变换，它们的数量和位置彼此对应。
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