METHOD OF FABRICATING ELECTRON EMISSION SOURCE, ELECTRON EMISSION DEVICE, AND ELECTRON EMISSION DISPLAY DEVICE INCLUDING THE ELECTRON EMISSION DEVICE
    4.
    发明申请
    METHOD OF FABRICATING ELECTRON EMISSION SOURCE, ELECTRON EMISSION DEVICE, AND ELECTRON EMISSION DISPLAY DEVICE INCLUDING THE ELECTRON EMISSION DEVICE 审中-公开
    制造电子发射源的方法,电子发射装置和包括电子发射装置的电子发射显示装置

    公开(公告)号:US20080278062A1

    公开(公告)日:2008-11-13

    申请号:US11865208

    申请日:2007-10-01

    IPC分类号: H01J1/62 H01J9/02 B05D5/12

    摘要: A method is provided for fabricating an electron emission source which can attain improved electron emission efficiency and has simplified manufacturing processes. Also provided are an electron emission display device and an electron emission display device fabricated using the method of fabricating an electron emission source. The method includes forming an electrode, forming a carbide compound thin film on the electrode and forming a carbide-induced carbon thin film layer from the carbide compound thin film using an etching gas. The electron emission device and the electron emission display device each include a first electrode, a second electrode disposed to face the first electrode, and a carbide-induced carbon thin film layer formed to be electrically connected to f the first electrode or the second electrode.

    摘要翻译: 提供了一种用于制造能够获得改善的电子发射效率和简化制造工艺的电子发射源的方法。 还提供了使用制造电子发射源的方法制造的电子发射显示装置和电子发射显示装置。 该方法包括形成电极,在电极上形成碳化物化合物薄膜,并使用蚀刻气体从碳化物化合物薄膜形成碳化物诱导的碳薄膜层。 电子发射装置和电子发射显示装置各自包括第一电极,与第一电极相对设置的第二电极和形成为与第一电极或第二电极电连接的碳化物诱导碳薄膜层。