中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

2491 records (took 0.027 seconds)

筛选除外

    EFFICIENT ENERGY RECOVERY IN A NANOSECOND PULSER CIRCUIT
    4.
    发明公开
    EFFICIENT ENERGY RECOVERY IN A NANOSECOND PULSER CIRCUIT 审中-公开

    公开(公告)号：US20240304417A1

    公开(公告)日：2024-09-12

    申请号：US18413975

    申请日：2024-01-16

    Applicant: Eagle Harbor Technologies, Inc.

    Inventor： James Prager ,  Timothy Ziemba ,  Kenneth Miller ,  Ilia Slobodov ,  Morgan Quinley

    IPC: H01J37/32 ,  H01L21/683

    CPC classification number: H01J37/32146 ,  H01J37/32091 ,  H01J37/32128 ,  H01J37/32174 ,  H01J37/32715 ,  H01L21/6833

    Abstract: Some embodiments include a nanosecond pulser circuit. In some embodiments, a nanosecond pulser circuit may include: a high voltage power supply; a nanosecond pulser electrically coupled with the high voltage power supply and switches voltage from the high voltage power supply at high frequencies; a transformer having a primary side and a secondary side, the nanosecond pulser electrically coupled with the primary side of the transformer; and an energy recovery circuit electrically coupled with the secondary side of the transformer. In some embodiments, the energy recovery circuit comprises: an inductor electrically coupled with the high voltage power supply; a crowbar diode arranged in parallel with the secondary side of the transformer; and a second diode disposed in series with the inductor and arranged to conduct current from a load to the high voltage power supply.

    Multi-stage pumping liner
    5.
    发明授权
    Multi-stage pumping liner 有权

    公开(公告)号：US12068144B2

    公开(公告)日：2024-08-20

    申请号：US16932799

    申请日：2020-07-19

    Applicant: Applied Materials, Inc.

    Inventor： Mingle Tong

    IPC: H01J37/32 ,  C23C16/44 ,  C23C16/455 ,  C23C16/458 ,  H01L21/67

    CPC classification number: H01J37/32834 ,  C23C16/4412 ,  C23C16/45508 ,  C23C16/45591 ,  C23C16/4585 ,  H01J37/32871 ,  H01J37/32091 ,  H01J37/32449 ,  H01J37/32458 ,  H01L21/67167

    Abstract: Exemplary semiconductor processing systems may include a pumping system, a chamber body that defines a processing region, and a pumping liner disposed within the processing region. The pumping liner may define an annular member characterized by a wall that defines an exhaust aperture coupled to the pumping system. The annular member may be characterized by an inner wall that defines a plurality of apertures distributed circumferentially along the inner wall. A plenum may be defined in the annular member between interior surfaces of the walls. A divider may be disposed within the plenum, where the divider separates the plenum into a first plenum chamber and a second plenum chamber, wherein the first plenum chamber is fluidly accessible from the apertures defined through the inner wall, and wherein the divider defines at least one aperture providing fluid access between the first plenum chamber and the second plenum chamber.

    Plasma Etching with Metal Sputtering
    7.
    发明公开
    Plasma Etching with Metal Sputtering 审中-公开

    公开(公告)号：US20240249927A1

    公开(公告)日：2024-07-25

    申请号：US18156900

    申请日：2023-01-19

    Applicant: Tokyo Electron Limited

    Inventor： Minjoon Park ,  Andrew Metz

    IPC: H01J37/34 ,  H01J37/32 ,  H01L21/311

    CPC classification number: H01J37/3473 ,  H01J37/32642 ,  H01J37/32743 ,  H01L21/31116 ,  H01L21/31144 ,  H01J37/32091 ,  H01J37/321 ,  H01J37/32568 ,  H01J2237/3341

    Abstract: A method of etching a substrate that includes: loading the substrate into a plasma etch chamber, the substrate including a patterned hard mask layer and an underlying layer, the plasma etch chamber including a chamber part having a surface including a refractory metal, and a first electrode; flowing a process gas including fluorine and carbon into the plasma etch chamber; applying a source power to the first electrode of the plasma etch chamber to generate a plasma in the plasma etch chamber; and etching the underlying layer, the etching including exposing the surface of the chamber part to the plasma to sputter the refractory metal from the surface of the chamber part, and forming a recess in the underlying layer and a conductive polymer layer including the refractory metal over sidewalls of the patterned hard mask layer and the underlying layer, the forming including exposing the substrate to the plasma.

    Non-Invasive IED Estimation For Pulsed-DC And Low Frequency Applications
    8.
    发明公开
    Non-Invasive IED Estimation For Pulsed-DC And Low Frequency Applications 审中-公开

    公开(公告)号：US20240249914A1

    公开(公告)日：2024-07-25

    申请号：US18158164

    申请日：2023-01-23

    Applicant: MKS Instruments, Inc.

    Inventor： Linnell MARTINEZ ,  David MILLER ,  Aaron RADOMSKI

    IPC: H01J37/32

    CPC classification number: H01J37/32128 ,  H01J37/32091 ,  H01J37/321

    Abstract: A RF power generation system includes a power source configured to generate a periodic waveform applied to a load and a controller configured to receive at least one of a voltage signal or a current signal indicating a respective voltage and current applied to an electrode of the load. The controller determines a surface potential of a workpiece in the load in accordance with the at least one of the voltage signal or the current signal and a series capacitance of the electrode. The controller further determines an ion potential in accordance with an approximation of the surface potential. The periodic waveform may be one of a pulsed DC waveform, a RF waveform, or a pulsed RF waveform.

Patent Agency Ranking