公开(公告)号：US20240304469A1

公开(公告)日：2024-09-12

申请号：US18273835

申请日：2021-02-16

Applicant: SK SILTRON CO., LTD.

Inventor： Gun Ho LEE ,  Chi Bok LEE ,  Dae Ki SEO ,  Byeong Ha KO

IPC: H01L21/67 ,  H01L21/02

CPC classification number: H01L21/67051 ,  H01L21/0209

Abstract: The present invention presents a single wafer-type wafer cleaning device and a single wafer-type method for controlling the surface roughness of a wafer, in which, in a wafer cleaning process, mutually different cleaning processes are carried out on the respective two sides of a wafer, and also, mutually different chemicals are used depending on the side of the wafer being cleaned, thereby enabling the respective roughness of the two sides to differ. The single wafer-type wafer cleaning device comprises a spin chamber, a first chemical supply device, a second chemical supply device and a third chemical supply device.

公开(公告)号：US20240258126A1

公开(公告)日：2024-08-01

申请号：US18561531

申请日：2022-03-07

Applicant: SUMCO Corporation

Inventor： Kaito NODA ,  Kazuhiro OHKUBO ,  Michihiko TOMITA ,  Daichi YAMAURA ,  Makoto TAKEMURA ,  Koichi OKUDA

IPC: H01L21/67 ,  H01L21/02 ,  H01L21/687

CPC classification number: H01L21/67051 ,  H01L21/02052 ,  H01L21/0209 ,  H01L21/68785

Abstract: A semiconductor wafer cleaning apparatus that can suppress the generation of particles on the back surface of the semiconductor wafer. A semiconductor wafer cleaning apparatus comprises a rotary table having an opening in the center; a wafer holder provided on the top surface of the rotary table; a return portion provided on the bottom surface of the rotary table; a nozzle head having a centrally located recess and a horizontal portion disposed on the radially outer side of the recess; a lower chemical supply nozzle; and a wafer back surface rinse nozzle, the return portion is disposed near the opening, and a return portion rinse nozzle is provided in the recess of the nozzle head to supply pure water toward the return portion to rinse the return portion.

公开(公告)号：US11908681B2

公开(公告)日：2024-02-20

申请号：US17865737

申请日：2022-07-15

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Hsuan-Ying Mai ,  Hui-Chun Lee

IPC: H01L21/67 ,  H01L21/02 ,  B08B3/04 ,  B08B1/00

CPC classification number: H01L21/0209 ,  B08B1/002 ,  B08B3/04 ,  H01L21/02096 ,  H01L21/67046

Abstract: In accordance with some embodiments, a semiconductor fabricating system is provided. The semiconductor fabricating system includes a wafer stage and a brush assembly moveable located below the wafer stage. The brush assembly includes a base plate, an inner brush member and an outer brush member. The inner brush member is positioned on the base plate, and the outer brush member surrounds the inner brush member. Inner grooves in the inner brush member are shallower than outer grooves in the outer brush member. The semiconductor fabricating system also includes a shaft and an actuator. The shaft is connected to the base plate, and the actuator is connected to shaft. The semiconductor fabricating system further include a controller programmed to send electric signals to the actuator to drive the base plate to rotate around a rotation axis.

公开(公告)号：US20230324806A1

公开(公告)日：2023-10-12

申请号：US18336399

申请日：2023-06-16

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： An-Ren Zi ,  Joy Cheng ,  Ching-Yu Chang

IPC: G03F7/26 ,  H01L21/027 ,  G03F7/30 ,  G03F7/38 ,  H01L21/02 ,  G03F7/16 ,  G03F7/004 ,  G03F7/40

CPC classification number: G03F7/26 ,  H01L21/0274 ,  G03F7/3057 ,  G03F7/38 ,  G03F7/40 ,  G03F7/168 ,  G03F7/162 ,  G03F7/0043 ,  H01L21/0209 ,  H01L21/0206

Abstract: A photoresist layer is coated over a wafer. The photoresist layer includes a metal-containing material. An extreme ultraviolet (EUV) lithography process is performed to the photoresist layer to form a patterned photoresist. The wafer is cleaned with a cleaning fluid to remove the metal-containing material. The cleaning fluid includes a solvent having Hansen solubility parameters of delta D in a range between 13 and 25, delta P in a range between 3 and 25, and delta H in a range between 4 and 30. The solvent contains an acid with an acid dissociation constant less than 4 or a base with an acid dissociation constant greater than 9.

公开(公告)号：US11681226B2

公开(公告)日：2023-06-20

申请号：US17121261

申请日：2020-12-14

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： An-Ren Zi ,  Joy Cheng ,  Ching-Yu Chang

IPC: G03F7/26 ,  H01L21/027 ,  H01L21/02 ,  G03F7/16 ,  G03F7/38 ,  G03F7/30 ,  G03F7/004 ,  G03F7/40

CPC classification number: G03F7/26 ,  G03F7/0043 ,  G03F7/162 ,  G03F7/168 ,  G03F7/3057 ,  G03F7/38 ,  H01L21/0206 ,  H01L21/0209 ,  H01L21/0274 ,  G03F7/40

Abstract: A photoresist layer is coated over a wafer. The photoresist layer includes a metal-containing material. An extreme ultraviolet (EUV) lithography process is performed to the photoresist layer to form a patterned photoresist. The wafer is cleaned with a cleaning fluid to remove the metal-containing material. The cleaning fluid includes a solvent having Hansen solubility parameters of delta D in a range between 13 and 25, delta P in a range between 3 and 25, and delta H in a range between 4 and 30. The solvent contains an acid with an acid dissociation constant less than 4 or a base with an acid dissociation constant greater than 9.

公开(公告)号：US20190221657A1

公开(公告)日：2019-07-18

申请号：US16249432

申请日：2019-01-16

Applicant: IPOWER SEMICONDUCTOR

Inventor： HAMZA YILMAZ

IPC: H01L29/739 ,  H01L29/08 ,  H01L29/06 ,  H01L29/66 ,  H01L21/266 ,  H01L21/02 ,  H01L21/306

CPC classification number: H01L29/7397 ,  H01L21/0209 ,  H01L21/266 ,  H01L21/30604 ,  H01L29/0623 ,  H01L29/0821 ,  H01L29/66348

Abstract: A vertical IGBT device is disclosed. The vertical IGBT structure includes an active MOSFET cell array formed in an active region at a front side of a semiconductor substrate of a first conductivity type. One or more column structures of a second conductivity type concentrically surround the active MOSFET cell array. Each column structure includes a column trench and a deep column region. The deep column region is formed by implanting implants of the second conductivity type into the semiconductor substrate through the floor of the column trench. Dielectric side wall spacers are formed on the trench side walls except a bottom wall of the trench and the column trench is filled with poly silicon of the second conductivity type. One or more column structures are substantially deeper than the active MOSFET cell array.

公开(公告)号：US20180062068A1

公开(公告)日：2018-03-01

申请号：US15559870

申请日：2016-03-02

Applicant: SUMITOMO CHEMICAL COMPANY, LIMITED

Inventor： Fumimasa HORIKIRI ,  Kenji SHIBATA ,  Kazutoshi WATANABE ,  Kazufumi SUENAGA

IPC: H01L41/187 ,  H01L37/02 ,  H01L41/047 ,  H01L41/29 ,  H01L41/332 ,  H01L41/316 ,  H01L41/338 ,  H01L41/43

CPC classification number: H01L41/1873 ,  C23C14/34 ,  C23C14/35 ,  H01L21/02071 ,  H01L21/0209 ,  H01L21/304 ,  H01L37/025 ,  H01L41/0477 ,  H01L41/29 ,  H01L41/316 ,  H01L41/332 ,  H01L41/338 ,  H01L41/43

Abstract: There is provided a method for manufacturing a ferroelectric thin film device including: a lower electrode film formation step of forming a lower electrode film on a substrate; a ferroelectric thin film formation step of forming a ferroelectric thin film made of a potassium sodium niobate on the lower electrode film; a ferroelectric thin film etching step of shaping the ferroelectric thin film into a desired micro-pattern by etching; and a thin film laminated substrate cleaning step of cleaning the substrate provided the ferroelectric thin film having a desired micro-pattern as a whole with a predetermined cleaning solution after the ferroelectric thin film etching step. The predetermined cleaning solution is a solution mixture containing hydrofluoric acid and ammonium fluoride, the hydrofluoric acid in the solution mixture having a molarity of 0.5 M or more and less than 5 M.

公开(公告)号：US20180040474A1

公开(公告)日：2018-02-08

申请号：US15491066

申请日：2017-04-19

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： An-Ren Zi ,  Joy Cheng ,  Ching-Yu Chang

IPC: H01L21/027 ,  G03F7/16 ,  G03F7/20 ,  G03F7/38 ,  G03F7/32 ,  B08B3/08 ,  G03F7/40 ,  G03F7/42 ,  G03F7/039 ,  G03F7/038 ,  C11D11/00 ,  H01L21/02 ,  G03F7/095

CPC classification number: H01L21/0274 ,  B08B3/08 ,  C11D11/0047 ,  G03F7/0043 ,  G03F7/038 ,  G03F7/039 ,  G03F7/0752 ,  G03F7/094 ,  G03F7/095 ,  G03F7/11 ,  G03F7/162 ,  G03F7/168 ,  G03F7/2004 ,  G03F7/32 ,  G03F7/38 ,  G03F7/40 ,  G03F7/425 ,  G03F7/426 ,  G03F7/70033 ,  G03F7/70091 ,  G03F7/70233 ,  G03F7/70308 ,  H01L21/02052 ,  H01L21/0206 ,  H01L21/02087 ,  H01L21/0209 ,  H01L21/67051

Abstract: A wafer is rinsed with a solvent. The wafer has an increased hydrophobicity as a result of being rinsed with the solvent. A metal-containing material is formed over the wafer after the wafer has been rinsed with the solvent. One or more lithography processes are performed at least in part using the metal-containing material. The metal-containing material is removed during or after the performing of the one or more lithography processes. The increased hydrophobicity of the wafer facilitates a removal of the metal-containing material.

公开(公告)号：US09887078B2

公开(公告)日：2018-02-06

申请号：US14983530

申请日：2015-12-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： Namsuk Kim ,  Ohhyung Kwon ,  Dae-Sung Kim ,  Jutaek Lim ,  Jaehyung Jung

IPC: B08B3/00 ,  H01L21/02 ,  H01L21/67 ,  H01L21/687

CPC classification number: H01L21/0209 ,  H01L21/02041 ,  H01L21/02057 ,  H01L21/67028 ,  H01L21/67051 ,  H01L21/68792

Abstract: A single-wafer-type cleaning apparatus is provided. The single-wafer-type cleaning apparatus is configured to be capable of controlling electrostatic charges generated due to rotating a wafer during a semiconductor cleaning process and a defect caused by the electrostatic charges. The cleaning process uses an ionizer mounted on a chuck.

公开(公告)号：US09716002B2

公开(公告)日：2017-07-25

申请号：US15204068

申请日：2016-07-07

Applicant: TOKYO ELECTRON LIMITED

Inventor： Yasushi Takiguchi ,  Taro Yamamoto ,  Akihiro Fujimoto ,  Shuuichi Nishikido ,  Dai Kumagai ,  Naoto Yoshitaka ,  Takahiro Kitano ,  Yoichi Tokunaga

IPC: H01L21/02 ,  B08B3/02 ,  H01L21/67 ,  B08B1/00 ,  B08B1/04 ,  B08B5/02 ,  B08B7/00 ,  H01L21/687

CPC classification number: H01L21/0209 ,  B08B1/002 ,  B08B1/04 ,  B08B3/02 ,  B08B5/02 ,  B08B7/0057 ,  H01L21/67028 ,  H01L21/67046 ,  H01L21/67051 ,  H01L21/68742 ,  H01L21/68764

Abstract: A disclosed substrate cleaning apparatus for cleaning a back surface of a substrate includes a first substrate supporting portion configured to support the substrate at a first area of a back surface of the substrate, the back surface facing down; a second substrate supporting portion configured to support the substrate at a second area of the back surface of the substrate, the second area being separated from the first area; a cleaning liquid supplying portion configured to supply cleaning liquid to the back surface of the substrate; a drying portion configured to dry the second area of the back surface of the substrate; and a cleaning portion configured to clean a third area of the back surface of the substrate when the substrate is supported by the first substrate supporting portion, the third area including the second area, and a fourth area of the back surface of the substrate when the substrate is supported by the second substrate supporting portion, the fourth area excluding the second area of the back surface.