公开(公告)号：US12131923B2

公开(公告)日：2024-10-29

申请号：US16175445

申请日：2018-10-30

申请人： EBARA CORPORATION

发明人： Yuta Suzuki ,  Taro Takahashi

IPC分类号： H01L21/67 ,  B24B29/04 ,  B24B37/013 ,  B24B37/10 ,  B24B49/10 ,  H01L21/306 ,  H01L21/66 ,  H01L21/677

CPC分类号： H01L21/67219 ,  B24B29/04 ,  B24B37/013 ,  B24B37/105 ,  B24B49/10 ,  H01L21/30625 ,  H01L21/67028 ,  H01L21/67034 ,  H01L21/67173 ,  H01L21/67178 ,  H01L21/67184 ,  H01L21/67748 ,  H01L22/26

摘要： A current detection section detects a current value of a swing shaft motor 14 and generates a first output. A first processing section obtains a contact pressure corresponding to the first output from the first output using first data indicating a correspondence relationship between a contact pressure applied to a semiconductor wafer by a top ring and the first output. A second processing section obtains a second output corresponding to a contact pressure obtained by the first processing section using second data indicating a correspondence relationship between the contact pressure obtained by the first processing section and the second output.

公开(公告)号：US12131911B2

公开(公告)日：2024-10-29

申请号：US17844563

申请日：2022-06-20

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Che-Lun Chang ,  Pin-Chuan Su ,  Hsin-Chieh Huang ,  Ming-Yuan Wu ,  Tzu kai Lin ,  Yu-Wen Wang ,  Che-Yuan Hsu

IPC分类号： H01L21/306 ,  H01L21/02 ,  H01L21/3065 ,  H01L21/308 ,  H01L21/311 ,  H01L29/66

CPC分类号： H01L21/30625 ,  H01L21/02447 ,  H01L21/02532 ,  H01L21/3065 ,  H01L21/308 ,  H01L21/31111 ,  H01L21/31116 ,  H01L29/66636

摘要： A method of forming a semiconductor device includes forming a first epitaxial layer over a substrate to form a wafer, depositing a dielectric layer over the first epitaxial layer, patterning the dielectric layer to form an opening, etching the first epitaxial layer through the opening to form a recess, forming a second epitaxial layer in the recess, etching the dielectric layer to expose a top surface of the first epitaxial layer, and planarizing the exposed top surface of the first epitaxial layer and a top surface of the second epitaxial layer.

公开(公告)号：US12131897B2

公开(公告)日：2024-10-29

申请号：US18312073

申请日：2023-05-04

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Chih-I Peng ,  Hsiu-Ming Yeh ,  Yi-Chang Liu

IPC分类号： H01L21/02 ,  B24B37/10 ,  H01L21/306 ,  H01L21/67 ,  H01L21/677

CPC分类号： H01L21/02057 ,  B24B37/10 ,  H01L21/02074 ,  H01L21/30625 ,  H01L21/67051 ,  H01L21/67173 ,  H01L21/67219 ,  H01L21/67748 ,  H01L21/67259

摘要： A method for processing a semiconductor wafer is provided. The method includes polishing the semiconductor wafer with a chemical mechanical polishing (CMP) tool. The method includes transferring the polished semiconductor wafer to an interface tool from the CMP tool. The method includes discharging a mist spray over the polished semiconductor wafer in the interface tool. The method includes transferring the semiconductor wafer form the interface tool to a cleaning tool for a cleaning process.

公开(公告)号：US20240355669A1

公开(公告)日：2024-10-24

申请号：US18689484

申请日：2022-08-26

申请人： Tokyo Electron Limited

发明人： Yasutaka MIZOMOTO ,  Yohei YAMASHITA

IPC分类号： H01L21/762 ,  H01L21/306 ,  H01L21/67

CPC分类号： H01L21/76243 ,  H01L21/30625 ,  H01L21/67092 ,  H01L21/76254

摘要： A substrate processing method of processing a combined substrate in which a first substrate and a second substrate are bonded to each other is provided. A device layer including multiple devices is formed on a front surface side of the first substrate. The substrate processing method includes forming a light leakage prevention layer by radiating first laser light to an oxygen-containing film formed between the device layer and a position where a modification layer serving as a starting point for separation of the first substrate is formed; forming the modification layer by radiating second laser light to an inside of the first substrate after the forming of the light leakage prevention layer; and separating the first substrate starting from the modification layer to thin the first substrate.

公开(公告)号：US20240347590A1

公开(公告)日：2024-10-17

申请号：US18755306

申请日：2024-06-26

申请人： Intel Corporation

发明人： Bhaskar Jyoti Krishnatreya ,  Guruprasad Arakere ,  Nitin Ashok Deshpande ,  Mohammad Enamul Kabir ,  Omkar Gopalkrishna Karhade ,  Keith Edward Zawadzki ,  Trianggono S. Widodo

IPC分类号： H01L29/06 ,  H01L21/306 ,  H01L21/3065 ,  H01L21/78 ,  H01L23/00 ,  H01L25/065

CPC分类号： H01L29/0657 ,  H01L21/78 ,  H01L23/562 ,  H01L25/0655 ,  H01L21/30625 ,  H01L21/3065 ,  H01L24/08 ,  H01L2224/08221

摘要： Systems, apparatus, articles of manufacture, and methods to reduce stress in integrated circuit packages are disclosed. An example semiconductor chip includes: a front surface; a back surface opposite the front surface; a first lateral surface extending between the front surface and the back surface; a second lateral surface extending between the front surface and the back surface; and a curved fillet at an intersection between the first lateral surface and the second lateral surface.

公开(公告)号：US12112952B2

公开(公告)日：2024-10-08

申请号：US17678093

申请日：2022-02-23

申请人： Samsung Electronics Co., Ltd.

发明人： Sungmin Kim ,  Daewon Ha

IPC分类号： H01L21/306 ,  H01L21/20 ,  H01L21/3105 ,  H01L21/762 ,  H01L21/84

CPC分类号： H01L21/30625 ,  H01L21/2007 ,  H01L21/31051 ,  H01L21/76251 ,  H01L21/76264 ,  H01L21/845

摘要： Methods of forming a semiconductor device and semiconductor device formed by the methods are provided. The methods of forming a semiconductor device may include providing a first substrate and a first bonding layer that is provided on the first substrate, forming a sacrificial pattern and an active pattern on a second substrate, forming a second bonding layer on the active pattern, bonding the second bonding layer onto the first bonding layer, removing the second substrate, and removing the sacrificial pattern to expose the active pattern. Forming the sacrificial pattern and the active pattern on the second substrate may include forming a preliminary sacrificial pattern and the active pattern on the second substrate and oxidizing the preliminary sacrificial pattern. The preliminary sacrificial pattern and the active pattern may be sequentially stacked on the second substrate.

公开(公告)号：US20240332026A1

公开(公告)日：2024-10-03

申请号：US18326494

申请日：2023-05-31

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Chi-Fan CHEN ,  Chun-Kai LAN ,  Zhen Yu GUAN ,  Hsun-Chung KUANG ,  Cheng-Yuan TSAI ,  Chung-Yi YU

IPC分类号： H01L21/306 ,  B24B37/04 ,  B24B37/16

CPC分类号： H01L21/30625 ,  B24B37/042 ,  B24B37/16

摘要： A substrate grinding tool is configured to remove material from a semiconductor substrate in a grinding operation. In the grinding operation, the substrate grinding tool uses a combination of mechanical grinding and a chemical etchant to remove material from the semiconductor substrate. The chemical etchant may be heated to a high temperature, which may increase the etch rate of the chemical etchant. The use of the combination of mechanical grinding and the chemical etchant may increase the grinding rate of the substrate grinding tool for grinding semiconductor substrates, may reduce surface roughness for semiconductor substrates that are processed by the substrate grinding tool, and/or may reduce surface damage for semiconductor substrates that are processed by the substrate grinding tool, among other examples.

公开(公告)号：US20240317622A1

公开(公告)日：2024-09-26

申请号：US18475898

申请日：2023-09-27

申请人： Samsung Electronics Co., Ltd.

发明人： Juhui PARK ,  Jongha YUN ,  Younhaeng LEE

IPC分类号： C02F9/00 ,  H01L21/02 ,  H01L21/306

CPC分类号： C02F9/00 ,  H01L21/02041 ,  H01L21/30604 ,  H01L21/30625 ,  C02F1/20 ,  C02F1/283 ,  C02F1/325 ,  C02F1/42 ,  C02F2001/422 ,  C02F2101/10 ,  C02F2101/30 ,  C02F2103/04 ,  C02F2103/346 ,  C02F2201/326 ,  C02F2209/20 ,  C02F2209/22

摘要： Disclosed are ultrapure water production systems, semiconductor processing systems, and semiconductor fabrication methods. An ultrapure water production system may include a front filtering part that filters a fluid and a rear filtering part that filters the fluid released from the front filtering part. The rear filtering part may include a UV irradiator that irradiates a UV ray to the fluid to remove an organic material from the fluid, an ANP that removes hydrogen peroxide from the fluid released from the UV irradiator, a connection line that connects the UV irradiator to the ANP, a hydrogen peroxide detector that is on the connection line and detects a concentration of hydrogen peroxide in the fluid released from the UV irradiator, and a DO detector between the hydrogen peroxide detector and the ANP to measure a concentration of dissolved oxygen in the fluid released from the UV irradiator.

公开(公告)号：US12094740B2

公开(公告)日：2024-09-17

申请号：US17212862

申请日：2021-03-25

申请人： Applied Materials, Inc.

发明人： Manoj A. Gajendra ,  Mahadev Joshi ,  Joseph Antony Jonathan ,  Jamie S. Leighton

IPC分类号： H01L21/67 ,  B08B3/02 ,  B08B5/02 ,  B08B13/00 ,  B24B37/013 ,  B24B37/34 ,  H01L21/02 ,  H01L21/306 ,  H01L21/66 ,  H01L21/687

CPC分类号： H01L21/67253 ,  B08B3/022 ,  B08B5/02 ,  B08B13/00 ,  B24B37/013 ,  B24B37/345 ,  H01L21/02057 ,  H01L21/30625 ,  H01L21/68707 ,  H01L22/12

摘要： A method and apparatus for polishing a substrate is disclosed herein. More specifically, the apparatus relates to an integrated CMP system for polishing substrates. The CMP system has a polishing station configured to polish substrates. A spin rinse dry (SRD) station configured to clean and dry the substrates. A metrology station configured to measure parameters of the substrates. A robot configured to move the substrate in to and out of the SRD station. And an effector rinse and dry (EERD) station configured to clean and dry an end effector of the robot.

公开(公告)号：US20240300066A1

公开(公告)日：2024-09-12

申请号：US18590378

申请日：2024-02-28

申请人： SK enpulse Co., Ltd.

发明人： Chang Gyu IM ,  Jang Won SEO ,  Jong Wook YUN ,  Joon Ho AN

IPC分类号： B24B37/20 ,  B24B37/04 ,  B24B37/22 ,  H01L21/306

CPC分类号： B24B37/205 ,  B24B37/042 ,  B24B37/22 ,  H01L21/30625

摘要： The present invention provides a polishing pad, which includes a polishing layer including a first surface that is a polishing surface and a second surface that is the back surface of the first surface and including first through holes formed to penetrate from the first surface to the second surface; windows placed within the first through holes; and a support layer placed on the side of the second surface of the polishing layer, including a third surface that is placed on the side of the polishing layer and a fourth surface that is the back surface of the third surface, and including second through holes formed to penetrate from the third surface to the fourth surface and connected to the first through holes. The windows include a first region where the height of a top surface is lower than the height of the first surface.