摘要:
Semiconductor packages include a first substrate including a central portion and a peripheral portion, at least one first central connection member attached to the central portion of the first substrate, and at least one first peripheral connection member attached to the peripheral portion of the first substrate. The first central connection member includes a first supporter and a first fusion conductive layer surrounding the first supporter.
摘要:
Semiconductor packages include a first substrate including a central portion and a peripheral portion, at least one first central connection member attached to the central portion of the first substrate, and at least one first peripheral connection member attached to the peripheral portion of the first substrate. The first central connection member includes a first supporter and a first fusion conductive layer surrounding the first supporter.
摘要:
A method of forming a stacked assembly of semiconductor chips can include juxtaposing and metallurgically joining kerf metal elements exposed in kerf regions of a first wafer with corresponding kerf metal elements exposed in kerf regions of a second wafer, and affixing undiced semiconductor chips of the first wafer with corresponding undiced semiconductor chips of the second wafer. The assembled wafers are then cut along the dicing lanes thereof into a plurality of individual assemblies of stacked semiconductor chips, each assembly including an undiced semiconductor chip of the first wafer and an undiced semiconductor chip of the second wafer affixed therewith.
摘要:
A method of forming a stacked assembly of semiconductor chips can include juxtaposing and metallurgically joining kerf metal elements exposed in kerf regions of a first wafer with corresponding kerf metal elements exposed in kerf regions of a second wafer, and affixing undiced semiconductor chips of the first wafer with corresponding undiced semiconductor chips of the second wafer. The assembled wafers are then cut along the dicing lanes thereof into a plurality of individual assemblies of stacked semiconductor chips, each assembly including an undiced semiconductor chip of the first wafer and an undiced semiconductor chip of the second wafer affixed therewith.
摘要:
A method of forming a stacked assembly of semiconductor chips can include juxtaposing and metallurgically joining kerf metal elements exposed in kerf regions of a first wafer with corresponding kerf metal elements exposed in kerf regions of a second wafer, and affixing undiced semiconductor chips of the first wafer with corresponding undiced semiconductor chips of the second wafer. The assembled wafers are then cut along the dicing lanes thereof into a plurality of individual assemblies of stacked semiconductor chips, each assembly including an undiced semiconductor chip of the first wafer and an undiced semiconductor chip of the second wafer affixed therewith.
摘要:
At least one metal adhesion layer is formed on at least a Cu surface of a first device wafer. A second device wafer having another Cu surface is positioned atop the Cu surface of the first device wafer and on the at least one metal adhesion layer. The first and second device wafers are then bonded together. The bonding includes heating the devices wafers to a temperature of less than 400° C., with or without, application of an external applied pressure. During the heating, the two Cu surfaces are bonded together and the at least one metal adhesion layer gets oxygen atoms from the two Cu surfaces and forms at least one metal oxide bonding layer between the Cu surfaces.
摘要:
Semiconductor packages include a first substrate including a central portion and a peripheral portion, at least one first central connection member attached to the central portion of the first substrate, and at least one first peripheral connection member attached to the peripheral portion of the first substrate. The first central connection member includes a first supporter and a first fusion conductive layer surrounding the first supporter.
摘要:
At least one metal adhesion layer is formed on at least a Cu surface of a first device wafer. A second device wafer having another Cu surface is positioned atop the Cu surface of the first device wafer and on the at least one metal adhesion layer. The first and second device wafers are then bonded together. The bonding includes heating the devices wafers to a temperature of less than 400° C., with or without, application of an external applied pressure. During the heating, the two Cu surfaces are bonded together and the at least one metal adhesion layer gets oxygen atoms from the two Cu surfaces and forms at least one metal oxide bonding layer between the Cu surfaces.
摘要:
At least one metal adhesion layer is formed on at least a Cu surface of a first device wafer. A second device wafer having another Cu surface is positioned atop the Cu surface of the first device wafer and on the at least one metal adhesion layer. The first and second device wafers are then bonded together. The bonding includes heating the devices wafers to a temperature of less than 400° C., with or without, application of an external applied pressure. During the heating, the two Cu surfaces are bonded together and the at least one metal adhesion layer gets oxygen atoms from the two Cu surfaces and forms at least one metal oxide bonding layer between the Cu surfaces.
摘要:
At least one metal adhesion layer is formed on at least a Cu surface of a first device wafer. A second device wafer having another Cu surface is positioned atop the Cu surface of the first device wafer and on the at least one metal adhesion layer. The first and second device wafers are then bonded together. The bonding includes heating the devices wafers to a temperature of less than 400° C., with or without, application of an external applied pressure. During the heating, the two Cu surfaces are bonded together and the at least one metal adhesion layer gets oxygen atoms from the two Cu surfaces and forms at least one metal oxide bonding layer between the Cu surfaces.