公开(公告)号：US08802553B2

公开(公告)日：2014-08-12

申请号：US13024862

申请日：2011-02-10

申请人： Alexander Heinrich ,  Konrad Roesl ,  Oliver Eichinger

发明人： Alexander Heinrich ,  Konrad Roesl ,  Oliver Eichinger

IPC分类号： H01L21/00

CPC分类号： H01L24/81 ,  H01L23/3107 ,  H01L23/49513 ,  H01L24/03 ,  H01L24/05 ,  H01L24/06 ,  H01L24/27 ,  H01L24/29 ,  H01L24/32 ,  H01L24/48 ,  H01L24/73 ,  H01L24/83 ,  H01L24/93 ,  H01L2224/0345 ,  H01L2224/03452 ,  H01L2224/04026 ,  H01L2224/04042 ,  H01L2224/0508 ,  H01L2224/05082 ,  H01L2224/05124 ,  H01L2224/05139 ,  H01L2224/05144 ,  H01L2224/05155 ,  H01L2224/05164 ,  H01L2224/05166 ,  H01L2224/05169 ,  H01L2224/05171 ,  H01L2224/05184 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05664 ,  H01L2224/05666 ,  H01L2224/05669 ,  H01L2224/05671 ,  H01L2224/05684 ,  H01L2224/06181 ,  H01L2224/27426 ,  H01L2224/2745 ,  H01L2224/29018 ,  H01L2224/29019 ,  H01L2224/29109 ,  H01L2224/29111 ,  H01L2224/29139 ,  H01L2224/29144 ,  H01L2224/29147 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2224/83191 ,  H01L2224/83203 ,  H01L2224/83345 ,  H01L2224/8381 ,  H01L2224/83898 ,  H01L2224/83906 ,  H01L2224/93 ,  H01L2924/00014 ,  H01L2924/01029 ,  H01L2924/01322 ,  H01L2924/01327 ,  H01L2924/12042 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/13062 ,  H01L2924/13091 ,  H01L2924/1461 ,  H01L2924/15787 ,  H01L2924/181 ,  H01L2924/351 ,  H01L2924/00012 ,  H01L2924/3512 ,  H01L2924/00 ,  H01L2924/01023 ,  H01L2924/0105 ,  H01L2924/01049 ,  H01L2224/27 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： A method includes providing a semiconductor chip having a first main surface and a layer of solder material deposited on the first main surface, wherein the layer of solder material has a roughness of at least 1 μm. The semiconductor chip is placed on a carrier with the first main surface of the semiconductor chip facing the carrier. The semiconductor chip is pressed on the carrier with a pressure of at least 1 Newton per mm2 of surface area of the first main surface and heat is applied to the solder material.

摘要翻译： 一种方法包括提供具有沉积在第一主表面上的第一主表面和焊料层的半导体芯片，其中焊料层的粗糙度至少为1μm。 将半导体芯片放置在载体上，半导体芯片的第一主表面面向载体。 将半导体芯片按第一主表面的表面积至少为1牛顿/千克的压力压在载体上，并将热量施加到焊料材料上。

公开(公告)号：US20120208323A1

公开(公告)日：2012-08-16

申请号：US13024862

申请日：2011-02-10

申请人： Alexander Heinrich ,  Konrad Roesl ,  Oliver Eichinger

发明人： Alexander Heinrich ,  Konrad Roesl ,  Oliver Eichinger

IPC分类号： H01L21/50

CPC分类号： H01L24/81 ,  H01L23/3107 ,  H01L23/49513 ,  H01L24/03 ,  H01L24/05 ,  H01L24/06 ,  H01L24/27 ,  H01L24/29 ,  H01L24/32 ,  H01L24/48 ,  H01L24/73 ,  H01L24/83 ,  H01L24/93 ,  H01L2224/0345 ,  H01L2224/03452 ,  H01L2224/04026 ,  H01L2224/04042 ,  H01L2224/0508 ,  H01L2224/05082 ,  H01L2224/05124 ,  H01L2224/05139 ,  H01L2224/05144 ,  H01L2224/05155 ,  H01L2224/05164 ,  H01L2224/05166 ,  H01L2224/05169 ,  H01L2224/05171 ,  H01L2224/05184 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05664 ,  H01L2224/05666 ,  H01L2224/05669 ,  H01L2224/05671 ,  H01L2224/05684 ,  H01L2224/06181 ,  H01L2224/27426 ,  H01L2224/2745 ,  H01L2224/29018 ,  H01L2224/29019 ,  H01L2224/29109 ,  H01L2224/29111 ,  H01L2224/29139 ,  H01L2224/29144 ,  H01L2224/29147 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2224/83191 ,  H01L2224/83203 ,  H01L2224/83345 ,  H01L2224/8381 ,  H01L2224/83898 ,  H01L2224/83906 ,  H01L2224/93 ,  H01L2924/00014 ,  H01L2924/01029 ,  H01L2924/01322 ,  H01L2924/01327 ,  H01L2924/12042 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/13062 ,  H01L2924/13091 ,  H01L2924/1461 ,  H01L2924/15787 ,  H01L2924/181 ,  H01L2924/351 ,  H01L2924/00012 ,  H01L2924/3512 ,  H01L2924/00 ,  H01L2924/01023 ,  H01L2924/0105 ,  H01L2924/01049 ,  H01L2224/27 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： A method includes providing a semiconductor chip having a first main surface and a layer of solder material deposited on the first main surface, wherein the layer of solder material has a roughness of at least 1 μm. The semiconductor chip is placed on a carrier with the first main surface of the semiconductor chip facing the carrier. The semiconductor chip is pressed on the carrier with a pressure of at least 1 Newton per mm2 of surface area of the first main surface and heat is applied to the solder material.

摘要翻译： 一种方法包括提供具有沉积在第一主表面上的第一主表面和焊料层的半导体芯片，其中焊料层的粗糙度至少为1μm。 将半导体芯片放置在载体上，半导体芯片的第一主表面面向载体。 将半导体芯片按第一主表面的表面积至少为1牛顿/千克的压力压在载体上，并将热量施加到焊料材料上。

公开(公告)号：US20140329361A1

公开(公告)日：2014-11-06

申请号：US14335660

申请日：2014-07-18

申请人： Infineon Technologies AG

发明人： Alexander Heinrich ,  Konrad Roesl ,  Oliver Eichinger

IPC分类号： H01L23/00

CPC分类号： H01L24/81 ,  H01L23/3107 ,  H01L23/49513 ,  H01L24/03 ,  H01L24/05 ,  H01L24/06 ,  H01L24/27 ,  H01L24/29 ,  H01L24/32 ,  H01L24/48 ,  H01L24/73 ,  H01L24/83 ,  H01L24/93 ,  H01L2224/0345 ,  H01L2224/03452 ,  H01L2224/04026 ,  H01L2224/04042 ,  H01L2224/0508 ,  H01L2224/05082 ,  H01L2224/05124 ,  H01L2224/05139 ,  H01L2224/05144 ,  H01L2224/05155 ,  H01L2224/05164 ,  H01L2224/05166 ,  H01L2224/05169 ,  H01L2224/05171 ,  H01L2224/05184 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05664 ,  H01L2224/05666 ,  H01L2224/05669 ,  H01L2224/05671 ,  H01L2224/05684 ,  H01L2224/06181 ,  H01L2224/27426 ,  H01L2224/2745 ,  H01L2224/29018 ,  H01L2224/29019 ,  H01L2224/29109 ,  H01L2224/29111 ,  H01L2224/29139 ,  H01L2224/29144 ,  H01L2224/29147 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2224/83191 ,  H01L2224/83203 ,  H01L2224/83345 ,  H01L2224/8381 ,  H01L2224/83898 ,  H01L2224/83906 ,  H01L2224/93 ,  H01L2924/00014 ,  H01L2924/01029 ,  H01L2924/01322 ,  H01L2924/01327 ,  H01L2924/12042 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/13062 ,  H01L2924/13091 ,  H01L2924/1461 ,  H01L2924/15787 ,  H01L2924/181 ,  H01L2924/351 ,  H01L2924/00012 ,  H01L2924/3512 ,  H01L2924/00 ,  H01L2924/01023 ,  H01L2924/0105 ,  H01L2924/01049 ,  H01L2224/27 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： A method includes providing a semiconductor chip having a first main surface and a layer of solder material deposited on the first main surface, wherein the layer of solder material has a roughness of at least 1 μm. The semiconductor chip is placed on a carrier with the first main surface of the semiconductor chip facing the carrier. The semiconductor chip is pressed on the carrier with a pressure of at least 1 Newton per mm2 of surface area of the first main surface and heat is applied to the solder material.

摘要翻译： 一种方法包括提供具有沉积在第一主表面上的第一主表面和焊料层的半导体芯片，其中焊料层的粗糙度至少为1μm。 将半导体芯片放置在载体上，半导体芯片的第一主表面面向载体。 将半导体芯片按第一主表面的表面积至少为1牛顿/千克的压力压在载体上，并将热量施加到焊料材料上。

公开(公告)号：US20230223315A1

公开(公告)日：2023-07-13

申请号：US18123553

申请日：2023-03-20

申请人： Laird Technologies, Inc.

发明人： Jason L. STRADER ,  Richard F. HILL

IPC分类号： H01L23/373 ,  H01L23/31 ,  H01L23/00

CPC分类号： H01L23/373 ,  H01L23/3107 ,  H01L24/32 ,  H01L24/27 ,  H01L2224/27426 ,  H01L2224/32058 ,  H01L2224/32245 ,  H01L2924/16235

摘要： According to various aspects, exemplary embodiments are disclosed of thermal interface materials, electronic devices, and methods for establishing thermal joints between heat spreaders or lids and heat sources. In exemplary embodiments, a method of establishing a thermal joint for conducting heat between a heat spreader and a heat source of an electronic device generally includes positioning a thermal interface material (TIM1) between the heat spreader and the heat source.

公开(公告)号：US11776868B2

公开(公告)日：2023-10-03

申请号：US18123553

申请日：2023-03-20

申请人： Laird Technologies, Inc.

发明人： Jason L. Strader ,  Richard F. Hill

IPC分类号： H01L23/31 ,  H01L23/367 ,  H01L23/42 ,  H01L23/427 ,  H01L23/373 ,  H01L23/00 ,  B23P15/26

CPC分类号： H01L23/3672 ,  B23P15/26 ,  H01L23/3107 ,  H01L23/373 ,  H01L23/42 ,  H01L23/427 ,  H01L24/27 ,  H01L24/32 ,  H01L2224/27426 ,  H01L2224/32058 ,  H01L2224/32245 ,  H01L2924/0002 ,  H01L2924/15312 ,  H01L2924/16152 ,  H01L2924/16235 ,  H01L2924/0002 ,  H01L2924/00

摘要： According to various aspects, exemplary embodiments are disclosed of thermal interface materials, electronic devices, and methods for establishing thermal joints between heat spreaders or lids and heat sources. In exemplary embodiments, a method of establishing a thermal joint for conducting heat between a heat spreader and a heat source of an electronic device generally includes positioning a thermal interface material (TIM1) between the heat spreader and the heat source.

公开(公告)号：US09034751B2

公开(公告)日：2015-05-19

申请号：US14335660

申请日：2014-07-18

申请人： Infineon Technologies AG

发明人： Alexander Heinrich ,  Konrad Roesl ,  Oliver Eichinger

IPC分类号： H01L21/00 ,  H01L23/00 ,  H01L23/495 ,  H01L23/31

CPC分类号： H01L24/81 ,  H01L23/3107 ,  H01L23/49513 ,  H01L24/03 ,  H01L24/05 ,  H01L24/06 ,  H01L24/27 ,  H01L24/29 ,  H01L24/32 ,  H01L24/48 ,  H01L24/73 ,  H01L24/83 ,  H01L24/93 ,  H01L2224/0345 ,  H01L2224/03452 ,  H01L2224/04026 ,  H01L2224/04042 ,  H01L2224/0508 ,  H01L2224/05082 ,  H01L2224/05124 ,  H01L2224/05139 ,  H01L2224/05144 ,  H01L2224/05155 ,  H01L2224/05164 ,  H01L2224/05166 ,  H01L2224/05169 ,  H01L2224/05171 ,  H01L2224/05184 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05664 ,  H01L2224/05666 ,  H01L2224/05669 ,  H01L2224/05671 ,  H01L2224/05684 ,  H01L2224/06181 ,  H01L2224/27426 ,  H01L2224/2745 ,  H01L2224/29018 ,  H01L2224/29019 ,  H01L2224/29109 ,  H01L2224/29111 ,  H01L2224/29139 ,  H01L2224/29144 ,  H01L2224/29147 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2224/83191 ,  H01L2224/83203 ,  H01L2224/83345 ,  H01L2224/8381 ,  H01L2224/83898 ,  H01L2224/83906 ,  H01L2224/93 ,  H01L2924/00014 ,  H01L2924/01029 ,  H01L2924/01322 ,  H01L2924/01327 ,  H01L2924/12042 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/13062 ,  H01L2924/13091 ,  H01L2924/1461 ,  H01L2924/15787 ,  H01L2924/181 ,  H01L2924/351 ,  H01L2924/00012 ,  H01L2924/3512 ,  H01L2924/00 ,  H01L2924/01023 ,  H01L2924/0105 ,  H01L2924/01049 ,  H01L2224/27 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： A method includes providing a semiconductor chip having a first main surface and a layer of solder material deposited on the first main surface, wherein the layer of solder material has a roughness of at least 1 μm. The semiconductor chip is placed on a carrier with the first main surface of the semiconductor chip facing the carrier. The semiconductor chip is pressed on the carrier with a pressure of at least 1 Newton per mm2 of surface area of the first main surface and heat is applied to the solder material.

摘要翻译： 一种方法包括提供具有沉积在第一主表面上的第一主表面和焊料层的半导体芯片，其中焊料层的粗糙度至少为1μm。 将半导体芯片放置在载体上，半导体芯片的第一主表面面向载体。 将半导体芯片按第一主表面的表面积至少为1牛顿/千克的压力压在载体上，并将热量施加到焊料材料上。