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公开(公告)号:US20150311173A1
公开(公告)日:2015-10-29
申请号:US14262381
申请日:2014-04-25
IPC分类号: H01L23/00
CPC分类号: H01L24/49 , H01L24/05 , H01L24/43 , H01L24/45 , H01L24/48 , H01L24/85 , H01L2224/05554 , H01L2224/05624 , H01L2224/431 , H01L2224/432 , H01L2224/45124 , H01L2224/45139 , H01L2224/45144 , H01L2224/45147 , H01L2224/45565 , H01L2224/45644 , H01L2224/45664 , H01L2224/45687 , H01L2224/4569 , H01L2224/48091 , H01L2224/48227 , H01L2224/48247 , H01L2224/4845 , H01L2224/48451 , H01L2224/48456 , H01L2224/48463 , H01L2224/4847 , H01L2224/49171 , H01L2224/78301 , H01L2224/85045 , H01L2224/85439 , H01L2224/85444 , H01L2224/85931 , H01L2224/85939 , H01L2224/85947 , H01L2924/00014 , H01L2924/10161 , H01L2924/15311 , H01L2924/181 , H01L2924/013 , H01L2924/01047 , H01L2924/01024 , H01L2924/01029 , H01L2924/01079 , H01L2924/01013 , H01L2924/01014 , H01L2924/00013 , H01L2924/00012 , H01L2224/45015 , H01L2924/207
摘要: A semiconductor structure includes a bond pad and a wire bond coupled to the bond pad. The wire bond includes a bond in contact with the bond pad. The wire bond includes a coating on a surface of the wire bond, and a first exposed portion of the wire bond in a selected location. The wire bond is devoid of the coating over the selected location of the wire bond, and an area of the first exposed portion is at least one square micron.
摘要翻译: 半导体结构包括接合焊盘和耦合到接合焊盘的引线键合。 引线键合包括与接合焊盘接触的键。 引线接合包括在引线键合的表面上的涂层,以及在选定位置的引线键合的第一暴露部分。 引线接合在引线键合的选定位置上没有涂层,并且第一暴露部分的面积为至少一平方微米。
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公开(公告)号:US09324675B2
公开(公告)日:2016-04-26
申请号:US14262381
申请日:2014-04-25
CPC分类号: H01L24/49 , H01L24/05 , H01L24/43 , H01L24/45 , H01L24/48 , H01L24/85 , H01L2224/05554 , H01L2224/05624 , H01L2224/431 , H01L2224/432 , H01L2224/45124 , H01L2224/45139 , H01L2224/45144 , H01L2224/45147 , H01L2224/45565 , H01L2224/45644 , H01L2224/45664 , H01L2224/45687 , H01L2224/4569 , H01L2224/48091 , H01L2224/48227 , H01L2224/48247 , H01L2224/4845 , H01L2224/48451 , H01L2224/48456 , H01L2224/48463 , H01L2224/4847 , H01L2224/49171 , H01L2224/78301 , H01L2224/85045 , H01L2224/85439 , H01L2224/85444 , H01L2224/85931 , H01L2224/85939 , H01L2224/85947 , H01L2924/00014 , H01L2924/10161 , H01L2924/15311 , H01L2924/181 , H01L2924/013 , H01L2924/01047 , H01L2924/01024 , H01L2924/01029 , H01L2924/01079 , H01L2924/01013 , H01L2924/01014 , H01L2924/00013 , H01L2924/00012 , H01L2224/45015 , H01L2924/207
摘要: A semiconductor structure includes a bond pad and a wire bond coupled to the bond pad. The wire bond includes a bond in contact with the bond pad. The wire bond includes a coating on a surface of the wire bond, and a first exposed portion of the wire bond in a selected location. The wire bond is devoid of the coating over the selected location of the wire bond, and an area of the first exposed portion is at least one square micron.
摘要翻译: 半导体结构包括接合焊盘和耦合到接合焊盘的引线键合。 引线键合包括与接合焊盘接触的键。 引线接合包括在引线键合的表面上的涂层,以及在选定位置的引线键合的第一暴露部分。 引线接合在引线键合的选定位置上没有涂层,并且第一暴露部分的面积为至少一平方微米。
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公开(公告)号:US06178623B2
公开(公告)日:2001-01-30
申请号:US09164490
申请日:1998-10-01
IPC分类号: H01R4300
CPC分类号: H01L24/45 , C25D5/10 , C25D5/44 , C25D5/50 , H01L24/43 , H01L2224/43 , H01L2224/431 , H01L2224/45015 , H01L2224/45118 , H01L2224/45124 , H01L2224/45573 , H01L2224/45574 , H01L2224/45601 , H01L2224/45618 , H01L2224/45624 , H01L2224/45639 , H01L2224/45644 , H01L2224/45647 , H01L2224/45655 , H01L2224/4566 , H01L2224/45664 , H01L2224/45666 , H01L2224/45669 , H01L2224/45671 , H01L2924/00014 , H01L2924/01006 , H01L2924/01012 , H01L2924/01014 , H01L2924/01019 , H01L2924/01028 , H01L2924/01029 , H01L2924/0103 , H01L2924/01047 , H01L2924/0105 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/014 , Y10T29/49117 , H01L2924/0132 , H01L2924/01201 , H01L2924/01026 , H01L2924/01025 , H01L2924/01024 , H01L2924/01022 , H01L2924/013 , H01L2924/00 , H01L2224/48 , H01L2924/0002
摘要: A copper plated aluminum wire with improvement in adhesive properties is fabricated by a method which includes a displacement step of forming a thin layer of a metal by displacement on a surface of an aluminum or aluminum alloy conductor, an electroplating step of coating a surface of the thin layer continuously with copper layers by electroplating to have a copper coated aluminum conductor, and a thermal diffusion step of heat treating the copper coated aluminum conductor at a temperature of 120° C. to 600° C. under an inert gas atmosphere for thermal diffusion. A plated aluminum wire is provided having an anchor metal layer formed by displacement plating, a low thermally conductive metal layer formed by electroplating, and a high electrically conductive metal layer formed by electroplating in which all of the layers are sequentially deposited on an outer surface of an aluminum or aluminum alloy conductor. A plated aluminum wire is provided having an anchor metal layer formed by displacement plating and a high electrically conductive metal layer formed by electroplating in which both of the layers are sequentially deposited on an outer surface of an aluminum or aluminum alloy conductor. A composite lightweight copper plated wire is provided having an electrically conductive metal layer that is deposited by electroplating on an outer surface of an anchor metal layer provided on an aluminum conductor.
摘要翻译: 通过包括在铝或铝合金导体的表面上通过位移形成金属薄层的置换步骤的方法制造具有改善粘合性能的镀铜铝线,电镀步骤, 通过电镀连续地具有铜层的薄层以具有铜涂覆的铝导体,以及在惰性气体气氛下在120℃至600℃的温度下热处理铜涂覆的铝导体的热扩散步骤用于热扩散 。 提供一种电镀铝线,其具有通过移位电镀形成的锚金属层,通过电镀形成的低导热金属层,以及通过电镀形成的高导电金属层,其中所有层顺序地沉积在 铝或铝合金导体。 提供一种电镀铝线,其具有通过位移镀覆形成的锚金属层和通过电镀形成的高导电金属层,其中两层依次沉积在铝或铝合金导体的外表面上。 提供了一种复合轻质镀铜线,其具有通过电镀沉积在设置在铝导体上的锚金属层的外表面上的导电金属层。
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公开(公告)号:US09103001B2
公开(公告)日:2015-08-11
申请号:US13496327
申请日:2011-11-01
申请人: Jun Chiba , Satoshi Teshima , Tasuku Kobayashi , Yuki Antoku
发明人: Jun Chiba , Satoshi Teshima , Tasuku Kobayashi , Yuki Antoku
CPC分类号: C22C5/06 , H01L24/05 , H01L24/43 , H01L24/45 , H01L24/48 , H01L2224/04042 , H01L2224/05624 , H01L2224/431 , H01L2224/43848 , H01L2224/45015 , H01L2224/45139 , H01L2224/45144 , H01L2224/45147 , H01L2224/45164 , H01L2224/48463 , H01L2224/48507 , H01L2224/48599 , H01L2224/48624 , H01L2224/48824 , H01L2224/85075 , H01L2924/00011 , H01L2924/01005 , H01L2924/01006 , H01L2924/01012 , H01L2924/01013 , H01L2924/01019 , H01L2924/0102 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01049 , H01L2924/0105 , H01L2924/01057 , H01L2924/01058 , H01L2924/01063 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01327 , H01L2924/00014 , H01L2924/01007 , H01L2924/01046 , H01L2924/01039 , H01L2924/01064 , H01L2924/0106 , H01L2924/01062 , H01L2924/01004 , H01L2924/01083 , H01L2924/00 , H01L2924/00015 , H01L2924/01204 , H01L2924/013 , H01L2924/20759 , H01L2924/2076 , H01L2924/20755 , H01L2924/20756 , H01L2924/20757 , H01L2924/20758 , H01L2924/2075 , H01L2924/20754 , H01L2924/01205 , H01L2924/01022 , H01L2924/01077 , H01L2924/00013
摘要: An Ag—Au—Pd ternary alloy bonding wire for semiconductor devices made from 4-10 mass % of gold having a purity of 99.999% or higher, 2-5 mass % of palladium having a purity of 99.99% or higher, and remaining mass % of silver (Ag) having a purity of 99.999% or higher; and this wire contains 15-70 mass ppm of oxidizing non-noble metallic elements, and is thermally annealed before being continuously drawn through dies, and is thermally tempered after being continuously drawn through the dies, and this wire is useful for ball bonding in a nitrogen atmosphere; Ag2Al and a Pd rich layer produced in the interface between the Ag—Au—Pd ternary alloy wire and an aluminum pad suppress the corrosion development between the Ag2Al intermetallic compound layer and the wire.
摘要翻译: 一种用于半导体器件的Ag-Au-Pd三元合金接合线,其由纯度为99.999%以上的纯度为4-10质量%,纯度为99.99%以上的钯为2-5质量%,剩余质量 %纯度为99.999%以上的银(Ag) 该线材含有15-70质量ppm的氧化性非贵金属元素,并且在连续拉伸模具之前进行热退火,并且在连续拉伸模具之后进行热回火,并且该线材可用于球形粘合 氮气; 在Ag-Au-Pd三元合金线和铝焊盘之间的界面产生的Ag 2 Al和富Pd层抑制了Ag2Al金属间化合物层和电线之间的腐蚀发展。
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公开(公告)号:US20120263624A1
公开(公告)日:2012-10-18
申请号:US13496327
申请日:2011-11-01
申请人: Jun Chiba , Satoshi Teshima , Tasuku Kobayashi , Yuki Antoku
发明人: Jun Chiba , Satoshi Teshima , Tasuku Kobayashi , Yuki Antoku
IPC分类号: C22C5/06
CPC分类号: C22C5/06 , H01L24/05 , H01L24/43 , H01L24/45 , H01L24/48 , H01L2224/04042 , H01L2224/05624 , H01L2224/431 , H01L2224/43848 , H01L2224/45015 , H01L2224/45139 , H01L2224/45144 , H01L2224/45147 , H01L2224/45164 , H01L2224/48463 , H01L2224/48507 , H01L2224/48599 , H01L2224/48624 , H01L2224/48824 , H01L2224/85075 , H01L2924/00011 , H01L2924/01005 , H01L2924/01006 , H01L2924/01012 , H01L2924/01013 , H01L2924/01019 , H01L2924/0102 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01049 , H01L2924/0105 , H01L2924/01057 , H01L2924/01058 , H01L2924/01063 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01327 , H01L2924/00014 , H01L2924/01007 , H01L2924/01046 , H01L2924/01039 , H01L2924/01064 , H01L2924/0106 , H01L2924/01062 , H01L2924/01004 , H01L2924/01083 , H01L2924/00 , H01L2924/00015 , H01L2924/01204 , H01L2924/013 , H01L2924/20759 , H01L2924/2076 , H01L2924/20755 , H01L2924/20756 , H01L2924/20757 , H01L2924/20758 , H01L2924/2075 , H01L2924/20754 , H01L2924/01205 , H01L2924/01022 , H01L2924/01077 , H01L2924/00013
摘要: An Ag—Au—Pd ternary alloy bonding wire for semiconductor devices made from 4-10 mass % of gold having a purity of 99.999 mass % or higher, 2-5 mass % of palladium having a purity of 99.99 mass % or higher, and remaining mass % of silver (Ag) having a purity of 99.999 mass % or higher; and this wire contains 15-70 mass ppm of oxidizing non-noble metallic elements, and is thermally annealed before being continuously drawn through dies, and is thermally tempered after being continuously drawn through the dies, and this wire is useful for ball bonding in a nitrogen atmosphere; Ag2Al and a Pd rich layer produced in the interface between the Ag—Au—Pd ternary alloy wire and an aluminum pad suppress the corrosion development between the Ag2Al intermetallic compound layer and the wire.
摘要翻译: 由纯度为99.999质量%以上的4-10质量%的金,纯度为99.99质量%以上的钯的2-5质量%的半导体装置用Ag-Au-Pd三元合金接合线,以及 纯度为99.999质量%以上的银(Ag)的剩余质量% 该线材含有15-70质量ppm的氧化性非贵金属元素,并且在连续拉伸模具之前进行热退火,并且在连续拉伸模具之后进行热回火,并且该线材可用于球形粘合 氮气; 在Ag-Au-Pd三元合金线和铝焊盘之间的界面产生的Ag 2 Al和富Pd层抑制了Ag2Al金属间化合物层和电线之间的腐蚀发展。
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