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公开(公告)号:US08063489B2
公开(公告)日:2011-11-22
申请号:US12628869
申请日:2009-12-01
IPC分类号: H01L23/52
CPC分类号: H01L24/05 , H01L21/565 , H01L22/32 , H01L23/485 , H01L23/49816 , H01L24/06 , H01L24/12 , H01L24/16 , H01L24/45 , H01L24/46 , H01L24/48 , H01L24/49 , H01L24/73 , H01L24/78 , H01L24/81 , H01L24/85 , H01L25/0657 , H01L2224/02166 , H01L2224/02205 , H01L2224/0347 , H01L2224/0401 , H01L2224/04042 , H01L2224/05027 , H01L2224/05082 , H01L2224/05083 , H01L2224/05084 , H01L2224/05124 , H01L2224/05144 , H01L2224/05147 , H01L2224/05155 , H01L2224/05157 , H01L2224/05164 , H01L2224/05166 , H01L2224/05169 , H01L2224/05173 , H01L2224/05181 , H01L2224/05184 , H01L2224/05553 , H01L2224/05554 , H01L2224/05558 , H01L2224/05564 , H01L2224/05568 , H01L2224/05572 , H01L2224/05583 , H01L2224/05624 , H01L2224/05644 , H01L2224/05647 , H01L2224/05655 , H01L2224/05664 , H01L2224/05666 , H01L2224/0568 , H01L2224/06183 , H01L2224/1134 , H01L2224/13099 , H01L2224/13144 , H01L2224/13147 , H01L2224/16225 , H01L2224/2919 , H01L2224/29198 , H01L2224/32145 , H01L2224/32225 , H01L2224/32245 , H01L2224/4502 , H01L2224/45124 , H01L2224/45144 , H01L2224/45147 , H01L2224/45164 , H01L2224/46 , H01L2224/4807 , H01L2224/48095 , H01L2224/48145 , H01L2224/48158 , H01L2224/48247 , H01L2224/48453 , H01L2224/48465 , H01L2224/48471 , H01L2224/48507 , H01L2224/48624 , H01L2224/48639 , H01L2224/48644 , H01L2224/48647 , H01L2224/48655 , H01L2224/48664 , H01L2224/4868 , H01L2224/48724 , H01L2224/48739 , H01L2224/48744 , H01L2224/48747 , H01L2224/48755 , H01L2224/48764 , H01L2224/4878 , H01L2224/48824 , H01L2224/48839 , H01L2224/48844 , H01L2224/48847 , H01L2224/48855 , H01L2224/48864 , H01L2224/4888 , H01L2224/49171 , H01L2224/49175 , H01L2224/73204 , H01L2224/73265 , H01L2224/78301 , H01L2224/81193 , H01L2224/81801 , H01L2224/83101 , H01L2224/85181 , H01L2224/85186 , H01L2224/85205 , H01L2224/85207 , H01L2224/85439 , H01L2224/85444 , H01L2224/85464 , H01L2225/0651 , H01L2225/06517 , H01L2924/00011 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01011 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01018 , H01L2924/01019 , H01L2924/01022 , H01L2924/01024 , H01L2924/01025 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/01042 , H01L2924/01045 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01061 , H01L2924/01065 , H01L2924/01073 , H01L2924/01074 , H01L2924/01075 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01327 , H01L2924/014 , H01L2924/04941 , H01L2924/04953 , H01L2924/05042 , H01L2924/078 , H01L2924/09701 , H01L2924/10253 , H01L2924/12042 , H01L2924/1306 , H01L2924/13091 , H01L2924/14 , H01L2924/15311 , H01L2924/15787 , H01L2924/15788 , H01L2924/181 , H01L2924/19041 , H01L2924/19043 , H01L2924/3511 , H01L2924/00014 , H01L2924/01039 , H01L2924/0665 , H01L2224/48227 , H01L2924/00 , H01L2924/00012 , H01L2924/0002 , H01L2924/00015
摘要: In semiconductor integrated circuit devices for vehicle use or the like, in general, an aluminum pad on a semiconductor chip and an external device are coupled to each other by wire bonding or the like using a gold wire and the like for the convenience of mounting. Such a semiconductor integrated circuit device, however, causes a connection failure due to the interaction between aluminum and gold in use for a long time at a relatively high temperature (about 150 degrees C.). The invention of the present application provides a semiconductor integrated circuit device (semiconductor device or electron circuit device) which includes a semiconductor chip as a part of the device, an electrolytic gold plated surface film (gold-based metal plated film) provided over an aluminum-based bonding pad on a semiconductor chip via a barrier metal film, and a gold bonding wire (gold-based bonding wire) for interconnection between the plated surface film and an external lead provided over a wiring board or the like (wiring substrate).
摘要翻译: 在用于车辆用途的半导体集成电路装置等中,为了便于安装,通常使用金线等通过引线接合等将半导体芯片上的铝焊盘和外部装置彼此耦合。 然而,这样的半导体集成电路器件在相对较高的温度(约150℃)下长时间使用铝和金之间的相互作用导致连接故障。 本申请的发明提供了一种半导体集成电路器件(半导体器件或电子电路器件),其包括作为器件的一部分的半导体芯片,设置在铝上的电解镀金表面膜(金基金属镀膜) 通过阻挡金属膜在半导体芯片上的金焊接焊盘和用于在电镀表面膜和设置在布线基板等上的外部引线之间互连的金键合线(金基接合线)。
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公开(公告)号:US20100133688A1
公开(公告)日:2010-06-03
申请号:US12628869
申请日:2009-12-01
IPC分类号: H01L23/488
CPC分类号: H01L24/05 , H01L21/565 , H01L22/32 , H01L23/485 , H01L23/49816 , H01L24/06 , H01L24/12 , H01L24/16 , H01L24/45 , H01L24/46 , H01L24/48 , H01L24/49 , H01L24/73 , H01L24/78 , H01L24/81 , H01L24/85 , H01L25/0657 , H01L2224/02166 , H01L2224/02205 , H01L2224/0347 , H01L2224/0401 , H01L2224/04042 , H01L2224/05027 , H01L2224/05082 , H01L2224/05083 , H01L2224/05084 , H01L2224/05124 , H01L2224/05144 , H01L2224/05147 , H01L2224/05155 , H01L2224/05157 , H01L2224/05164 , H01L2224/05166 , H01L2224/05169 , H01L2224/05173 , H01L2224/05181 , H01L2224/05184 , H01L2224/05553 , H01L2224/05554 , H01L2224/05558 , H01L2224/05564 , H01L2224/05568 , H01L2224/05572 , H01L2224/05583 , H01L2224/05624 , H01L2224/05644 , H01L2224/05647 , H01L2224/05655 , H01L2224/05664 , H01L2224/05666 , H01L2224/0568 , H01L2224/06183 , H01L2224/1134 , H01L2224/13099 , H01L2224/13144 , H01L2224/13147 , H01L2224/16225 , H01L2224/2919 , H01L2224/29198 , H01L2224/32145 , H01L2224/32225 , H01L2224/32245 , H01L2224/4502 , H01L2224/45124 , H01L2224/45144 , H01L2224/45147 , H01L2224/45164 , H01L2224/46 , H01L2224/4807 , H01L2224/48095 , H01L2224/48145 , H01L2224/48158 , H01L2224/48247 , H01L2224/48453 , H01L2224/48465 , H01L2224/48471 , H01L2224/48507 , H01L2224/48624 , H01L2224/48639 , H01L2224/48644 , H01L2224/48647 , H01L2224/48655 , H01L2224/48664 , H01L2224/4868 , H01L2224/48724 , H01L2224/48739 , H01L2224/48744 , H01L2224/48747 , H01L2224/48755 , H01L2224/48764 , H01L2224/4878 , H01L2224/48824 , H01L2224/48839 , H01L2224/48844 , H01L2224/48847 , H01L2224/48855 , H01L2224/48864 , H01L2224/4888 , H01L2224/49171 , H01L2224/49175 , H01L2224/73204 , H01L2224/73265 , H01L2224/78301 , H01L2224/81193 , H01L2224/81801 , H01L2224/83101 , H01L2224/85181 , H01L2224/85186 , H01L2224/85205 , H01L2224/85207 , H01L2224/85439 , H01L2224/85444 , H01L2224/85464 , H01L2225/0651 , H01L2225/06517 , H01L2924/00011 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01011 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01018 , H01L2924/01019 , H01L2924/01022 , H01L2924/01024 , H01L2924/01025 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/01042 , H01L2924/01045 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01061 , H01L2924/01065 , H01L2924/01073 , H01L2924/01074 , H01L2924/01075 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01327 , H01L2924/014 , H01L2924/04941 , H01L2924/04953 , H01L2924/05042 , H01L2924/078 , H01L2924/09701 , H01L2924/10253 , H01L2924/12042 , H01L2924/1306 , H01L2924/13091 , H01L2924/14 , H01L2924/15311 , H01L2924/15787 , H01L2924/15788 , H01L2924/181 , H01L2924/19041 , H01L2924/19043 , H01L2924/3511 , H01L2924/00014 , H01L2924/01039 , H01L2924/0665 , H01L2224/48227 , H01L2924/00 , H01L2924/00012 , H01L2924/0002 , H01L2924/00015
摘要: In semiconductor integrated circuit devices for vehicle use or the like, in general, an aluminum pad on a semiconductor chip and an external device are coupled to each other by wire bonding or the like using a gold wire and the like for the convenience of mounting. Such a semiconductor integrated circuit device, however, causes a connection failure due to the interaction between aluminum and gold in use for a long time at a relatively high temperature (about 150 degrees C.). The invention of the present application provides a semiconductor integrated circuit device (semiconductor device or electron circuit device) which includes a semiconductor chip as a part of the device, an electrolytic gold plated surface film (gold-based metal plated film) provided over an aluminum-based bonding pad on a semiconductor chip via a barrier metal film, and a gold bonding wire (gold-based bonding wire) for interconnection between the plated surface film and an external lead provided over a wiring board or the like (wiring substrate).
摘要翻译: 在用于车辆用途的半导体集成电路装置等中,为了便于安装,通常使用金线等通过引线接合等将半导体芯片上的铝焊盘和外部装置彼此耦合。 然而,这样的半导体集成电路器件在相对较高的温度(约150℃)下长时间使用铝和金之间的相互作用导致连接故障。 本申请的发明提供了一种半导体集成电路器件(半导体器件或电子电路器件),其包括作为器件的一部分的半导体芯片,设置在铝上的电解镀金表面膜(金基金属镀膜) 通过阻挡金属膜在半导体芯片上的金焊接焊盘和用于在电镀表面膜和设置在布线基板等上的外部引线之间互连的金键合线(金基接合线)。
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公开(公告)号:US20130313708A1
公开(公告)日:2013-11-28
申请号:US13952596
申请日:2013-07-27
IPC分类号: H01L23/498 , H01L23/485
CPC分类号: H01L24/05 , H01L21/565 , H01L22/32 , H01L23/485 , H01L23/49816 , H01L24/06 , H01L24/12 , H01L24/16 , H01L24/45 , H01L24/46 , H01L24/48 , H01L24/49 , H01L24/73 , H01L24/78 , H01L24/81 , H01L24/85 , H01L25/0657 , H01L2224/02166 , H01L2224/02205 , H01L2224/0347 , H01L2224/0401 , H01L2224/04042 , H01L2224/05027 , H01L2224/05082 , H01L2224/05083 , H01L2224/05084 , H01L2224/05124 , H01L2224/05144 , H01L2224/05147 , H01L2224/05155 , H01L2224/05157 , H01L2224/05164 , H01L2224/05166 , H01L2224/05169 , H01L2224/05173 , H01L2224/05181 , H01L2224/05184 , H01L2224/05553 , H01L2224/05554 , H01L2224/05558 , H01L2224/05564 , H01L2224/05568 , H01L2224/05572 , H01L2224/05583 , H01L2224/05624 , H01L2224/05644 , H01L2224/05647 , H01L2224/05655 , H01L2224/05664 , H01L2224/05666 , H01L2224/0568 , H01L2224/06183 , H01L2224/1134 , H01L2224/13099 , H01L2224/13144 , H01L2224/13147 , H01L2224/16225 , H01L2224/2919 , H01L2224/29198 , H01L2224/32145 , H01L2224/32225 , H01L2224/32245 , H01L2224/4502 , H01L2224/45124 , H01L2224/45144 , H01L2224/45147 , H01L2224/45164 , H01L2224/45169 , H01L2224/46 , H01L2224/4807 , H01L2224/48095 , H01L2224/48145 , H01L2224/48158 , H01L2224/48247 , H01L2224/48453 , H01L2224/48465 , H01L2224/48471 , H01L2224/48507 , H01L2224/48624 , H01L2224/48639 , H01L2224/48644 , H01L2224/48647 , H01L2224/48655 , H01L2224/48664 , H01L2224/4868 , H01L2224/48724 , H01L2224/48739 , H01L2224/48744 , H01L2224/48747 , H01L2224/48755 , H01L2224/48764 , H01L2224/4878 , H01L2224/48824 , H01L2224/48839 , H01L2224/48844 , H01L2224/48847 , H01L2224/48855 , H01L2224/48864 , H01L2224/4888 , H01L2224/49171 , H01L2224/49175 , H01L2224/73204 , H01L2224/73265 , H01L2224/78301 , H01L2224/81193 , H01L2224/81801 , H01L2224/83101 , H01L2224/85181 , H01L2224/85186 , H01L2224/85205 , H01L2224/85207 , H01L2224/85439 , H01L2224/85444 , H01L2224/85464 , H01L2225/0651 , H01L2225/06517 , H01L2924/00011 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01011 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01018 , H01L2924/01019 , H01L2924/01022 , H01L2924/01024 , H01L2924/01025 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/01042 , H01L2924/01045 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01061 , H01L2924/01065 , H01L2924/01073 , H01L2924/01074 , H01L2924/01075 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01327 , H01L2924/014 , H01L2924/04941 , H01L2924/04953 , H01L2924/05042 , H01L2924/078 , H01L2924/09701 , H01L2924/10253 , H01L2924/12042 , H01L2924/1306 , H01L2924/13091 , H01L2924/14 , H01L2924/15311 , H01L2924/15787 , H01L2924/15788 , H01L2924/181 , H01L2924/19041 , H01L2924/19043 , H01L2924/3511 , H01L2924/00014 , H01L2924/01039 , H01L2924/0665 , H01L2224/48227 , H01L2924/00 , H01L2924/00012 , H01L2924/0002 , H01L2924/00015
摘要: In semiconductor integrated circuit devices for vehicle use, an aluminum pad on a semiconductor chip and an external device are coupled to each other by wire bonding using a gold wire for the convenience of mounting. Such a semiconductor integrated circuit device, however, causes a connection failure due to the interaction between aluminum and gold in use for a long time at a relatively high temperature (about 150 degrees C.). A semiconductor integrated circuit device can include a semiconductor chip as a part of the device, an electrolytic gold plated surface film (gold-based metal plated film) provided over an aluminum-based bonding pad on a semiconductor chip via a barrier metal film, and a gold bonding wire (gold-based bonding wire) for interconnection between the plated surface film and an external lead provided over a wiring board (wiring substrate).
摘要翻译: 在用于车辆用途的半导体集成电路器件中,半导体芯片上的铝焊盘和外部器件通过使用金线的引线接合彼此耦合以便于安装。 然而,这样的半导体集成电路器件在相对较高的温度(约150℃)下长时间使用铝和金之间的相互作用导致连接故障。 半导体集成电路器件可以包括作为器件的一部分的半导体芯片,经由阻挡金属膜设置在半导体芯片上的铝基焊盘上的电解镀金表面膜(金基金属镀膜),以及 用于在电镀表面膜和设置在布线板(布线基板)上的外部引线之间互连的金接合线(金基接合线)。
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公开(公告)号:US06800555B2
公开(公告)日:2004-10-05
申请号:US09817696
申请日:2001-03-23
IPC分类号: H01L2144
CPC分类号: H01L23/53238 , H01L21/288 , H01L23/53233 , H01L24/03 , H01L24/05 , H01L24/45 , H01L24/48 , H01L24/85 , H01L2224/04042 , H01L2224/05082 , H01L2224/05111 , H01L2224/05147 , H01L2224/05155 , H01L2224/05157 , H01L2224/05164 , H01L2224/05166 , H01L2224/05171 , H01L2224/0518 , H01L2224/05184 , H01L2224/05556 , H01L2224/05624 , H01L2224/05639 , H01L2224/05644 , H01L2224/05647 , H01L2224/05655 , H01L2224/05664 , H01L2224/05669 , H01L2224/0568 , H01L2224/45014 , H01L2224/45015 , H01L2224/45124 , H01L2224/45144 , H01L2224/45147 , H01L2224/4845 , H01L2224/48463 , H01L2224/48624 , H01L2224/48639 , H01L2224/48644 , H01L2224/48647 , H01L2224/48655 , H01L2224/48664 , H01L2224/48669 , H01L2224/4868 , H01L2224/48724 , H01L2224/48739 , H01L2224/48747 , H01L2224/48755 , H01L2224/48764 , H01L2224/48769 , H01L2224/4878 , H01L2224/48839 , H01L2224/48844 , H01L2224/48847 , H01L2224/48855 , H01L2224/48864 , H01L2224/4888 , H01L2224/78252 , H01L2224/78253 , H01L2224/85013 , H01L2224/85201 , H01L2224/85203 , H01L2224/85205 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01022 , H01L2924/01024 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/01042 , H01L2924/01047 , H01L2924/0105 , H01L2924/01073 , H01L2924/01074 , H01L2924/01075 , H01L2924/01076 , H01L2924/01078 , H01L2924/01079 , H01L2924/01327 , H01L2924/014 , H01L2924/04941 , H01L2924/04953 , H01L2924/05042 , H01L2924/10253 , H01L2924/14 , H01L2924/19043 , H01L2924/20751 , H01L2924/20752 , H01L2924/20753 , H01L2924/3025 , H01L2924/01004 , H01L2224/78 , H01L2924/00 , H01L2224/48824 , H01L2224/48869 , H01L2224/48744
摘要: A robust, reliable and low-cost metal structure and process enabling electrical wire/ribbon connections to the interconnecting copper metallization of integrated circuits. The structure comprises a layer of barrier metal that resists copper diffusion, deposited on the non-oxidized copper surface in a thickness such that the barrier layer reduces the diffusion of copper at 250° C. by more than 80% compared with the absence of the barrier metal. The structure further comprises an outermost bondable layer which reduces the diffusion of the barrier metal at 250° C. by more than 80% compared with the absence of the bondable metal. Finally, a metal wire is bonded to the outermost layer for metallurgical connection. The barrier metal is selected from a group consisting of nickel, cobalt, chromium, molybdenum, titanium, tungsten, and alloys thereof. The outermost bondable metal layer is selected from a group consisting of gold, platinum, and silver.
摘要翻译: 坚固,可靠和低成本的金属结构和工艺,使电线/带能够连接到集成电路的互连铜金属化。 该结构包括阻挡铜扩散的层,其沉积在非氧化的铜表面上,其厚度使得阻挡层将铜在250℃下的扩散减少了80%以上,与不存在 屏障金属。 该结构还包括最外面的可结合层,与不存在可结合金属相比,阻挡金属在250℃下的扩散减少大于80%。 最后,将金属丝结合到用于冶金连接的最外层。阻挡金属选自镍,钴,铬,钼,钛,钨及其合金。 最外层的可焊接金属层选自金,铂和银。
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公开(公告)号:US09466559B2
公开(公告)日:2016-10-11
申请号:US13229887
申请日:2011-09-12
IPC分类号: H01L23/498 , H01L23/00 , H01L25/065 , H01L23/485 , H01L21/66
CPC分类号: H01L24/05 , H01L21/565 , H01L22/32 , H01L23/485 , H01L23/49816 , H01L24/06 , H01L24/12 , H01L24/16 , H01L24/45 , H01L24/46 , H01L24/48 , H01L24/49 , H01L24/73 , H01L24/78 , H01L24/81 , H01L24/85 , H01L25/0657 , H01L2224/02166 , H01L2224/02205 , H01L2224/0347 , H01L2224/0401 , H01L2224/04042 , H01L2224/05027 , H01L2224/05082 , H01L2224/05083 , H01L2224/05084 , H01L2224/05124 , H01L2224/05144 , H01L2224/05147 , H01L2224/05155 , H01L2224/05157 , H01L2224/05164 , H01L2224/05166 , H01L2224/05169 , H01L2224/05173 , H01L2224/05181 , H01L2224/05184 , H01L2224/05553 , H01L2224/05554 , H01L2224/05558 , H01L2224/05564 , H01L2224/05568 , H01L2224/05572 , H01L2224/05583 , H01L2224/05624 , H01L2224/05644 , H01L2224/05647 , H01L2224/05655 , H01L2224/05664 , H01L2224/05666 , H01L2224/0568 , H01L2224/06183 , H01L2224/1134 , H01L2224/13099 , H01L2224/13144 , H01L2224/13147 , H01L2224/16225 , H01L2224/2919 , H01L2224/29198 , H01L2224/32145 , H01L2224/32225 , H01L2224/32245 , H01L2224/4502 , H01L2224/45124 , H01L2224/45144 , H01L2224/45147 , H01L2224/45164 , H01L2224/46 , H01L2224/4807 , H01L2224/48095 , H01L2224/48145 , H01L2224/48158 , H01L2224/48247 , H01L2224/48453 , H01L2224/48465 , H01L2224/48471 , H01L2224/48507 , H01L2224/48624 , H01L2224/48639 , H01L2224/48644 , H01L2224/48647 , H01L2224/48655 , H01L2224/48664 , H01L2224/4868 , H01L2224/48724 , H01L2224/48739 , H01L2224/48744 , H01L2224/48747 , H01L2224/48755 , H01L2224/48764 , H01L2224/4878 , H01L2224/48824 , H01L2224/48839 , H01L2224/48844 , H01L2224/48847 , H01L2224/48855 , H01L2224/48864 , H01L2224/4888 , H01L2224/49171 , H01L2224/49175 , H01L2224/73204 , H01L2224/73265 , H01L2224/78301 , H01L2224/81193 , H01L2224/81801 , H01L2224/83101 , H01L2224/85181 , H01L2224/85186 , H01L2224/85205 , H01L2224/85207 , H01L2224/85439 , H01L2224/85444 , H01L2224/85464 , H01L2225/0651 , H01L2225/06517 , H01L2924/00011 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01011 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01018 , H01L2924/01019 , H01L2924/01022 , H01L2924/01024 , H01L2924/01025 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/01042 , H01L2924/01045 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01061 , H01L2924/01065 , H01L2924/01073 , H01L2924/01074 , H01L2924/01075 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01327 , H01L2924/014 , H01L2924/04941 , H01L2924/04953 , H01L2924/05042 , H01L2924/078 , H01L2924/09701 , H01L2924/10253 , H01L2924/12042 , H01L2924/1306 , H01L2924/13091 , H01L2924/14 , H01L2924/15311 , H01L2924/15787 , H01L2924/15788 , H01L2924/181 , H01L2924/19041 , H01L2924/19043 , H01L2924/3511 , H01L2924/00014 , H01L2924/01039 , H01L2924/0665 , H01L2224/48227 , H01L2924/00 , H01L2924/00012 , H01L2924/0002 , H01L2924/00015
摘要: In semiconductor integrated circuit devices for vehicle use, an aluminum pad on a semiconductor chip and an external device are coupled to each other by wire bonding using a gold wire for the convenience of mounting. Such a semiconductor integrated circuit device, however, causes a connection failure due to the interaction between aluminum and gold in use for a long time at a relatively high temperature (about 150 degrees C.). A semiconductor integrated circuit device can include a semiconductor chip as a part of the device, an electrolytic gold plated surface film (gold-based metal plated film) provided over an aluminum-based bonding pad on a semiconductor chip via a barrier metal film, and a gold bonding wire (gold-based bonding wire) for interconnection between the plated surface film and an external lead provided over a wiring board (wiring substrate).
摘要翻译: 在用于车辆用途的半导体集成电路器件中,半导体芯片上的铝焊盘和外部器件通过使用金线的引线接合彼此耦合以便于安装。 然而,这样的半导体集成电路器件在相对较高的温度(约150℃)下长时间使用铝和金之间的相互作用导致连接故障。 半导体集成电路器件可以包括作为器件的一部分的半导体芯片,经由阻挡金属膜设置在半导体芯片上的铝基焊盘上的电解镀金表面膜(金基金属镀膜),以及 用于在电镀表面膜和设置在布线板(布线基板)上的外部引线之间互连的金接合线(金基接合线)。
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公开(公告)号:US20050106851A1
公开(公告)日:2005-05-19
申请号:US10910454
申请日:2004-08-04
申请人: Howard Test , Gonzalo Amador , Willmar Subido
发明人: Howard Test , Gonzalo Amador , Willmar Subido
IPC分类号: H01L23/52 , H01L21/288 , H01L21/3205 , H01L21/60 , H01L23/485 , H01L23/532 , H01L21/44
CPC分类号: H01L23/53238 , H01L21/288 , H01L23/53233 , H01L24/03 , H01L24/05 , H01L24/45 , H01L24/48 , H01L24/85 , H01L2224/04042 , H01L2224/05082 , H01L2224/05111 , H01L2224/05147 , H01L2224/05155 , H01L2224/05157 , H01L2224/05164 , H01L2224/05166 , H01L2224/05171 , H01L2224/0518 , H01L2224/05184 , H01L2224/05556 , H01L2224/05624 , H01L2224/05639 , H01L2224/05644 , H01L2224/05647 , H01L2224/05655 , H01L2224/05664 , H01L2224/05669 , H01L2224/0568 , H01L2224/45014 , H01L2224/45015 , H01L2224/45124 , H01L2224/45144 , H01L2224/45147 , H01L2224/4845 , H01L2224/48463 , H01L2224/48624 , H01L2224/48639 , H01L2224/48644 , H01L2224/48647 , H01L2224/48655 , H01L2224/48664 , H01L2224/48669 , H01L2224/4868 , H01L2224/48724 , H01L2224/48739 , H01L2224/48747 , H01L2224/48755 , H01L2224/48764 , H01L2224/48769 , H01L2224/4878 , H01L2224/48839 , H01L2224/48844 , H01L2224/48847 , H01L2224/48855 , H01L2224/48864 , H01L2224/4888 , H01L2224/78252 , H01L2224/78253 , H01L2224/85013 , H01L2224/85201 , H01L2224/85203 , H01L2224/85205 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01022 , H01L2924/01024 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/01042 , H01L2924/01047 , H01L2924/0105 , H01L2924/01073 , H01L2924/01074 , H01L2924/01075 , H01L2924/01076 , H01L2924/01078 , H01L2924/01079 , H01L2924/01327 , H01L2924/014 , H01L2924/04941 , H01L2924/04953 , H01L2924/05042 , H01L2924/10253 , H01L2924/14 , H01L2924/19043 , H01L2924/20751 , H01L2924/20752 , H01L2924/20753 , H01L2924/3025 , H01L2924/01004 , H01L2224/78 , H01L2924/00 , H01L2224/48824 , H01L2224/48869 , H01L2224/48744 , H01L2924/206
摘要: A robust, reliable and low-cost metal structure and process enabling electrical wire/ribbon connections to the interconnecting copper metallization of integrated circuits. The structure comprises a layer of barrier metal that resists copper diffusion, deposited on the non-oxidized copper surface in a thickness such that the barrier layer reduces the diffusion of copper at 250° C. by more than 80% compared with the absence of the barrier metal. The structure further comprises an outermost bondable layer which reduces the diffusion of the barrier metal at 250° C. by more than 80% compared with the absence of the bondable metal. Finally, a metal wire is bonded to the outermost layer for metallurgical connection. The barrier metal is selected from a group consisting of nickel, cobalt, chromium, molybdenum, titanium, tungsten, and alloys thereof. The outermost bondable metal layer is selected from a group consisting of gold, platinum, and silver.
摘要翻译: 坚固,可靠和低成本的金属结构和工艺,使电线/带能够连接到集成电路的互连铜金属化。 该结构包括阻挡铜扩散的层,其沉积在非氧化的铜表面上,其厚度使得阻挡层将铜在250℃下的扩散减少了80%以上,与不存在 屏障金属。 该结构还包括最外面的可结合层,与不存在可结合金属相比,阻挡金属在250℃下的扩散减少大于80%。 最后,将金属丝结合到最外层用于冶金连接。 阻挡金属选自镍,钴,铬,钼,钛,钨及其合金。 最外层的可焊接金属层选自金,铂和银。
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公开(公告)号:US20010035452A1
公开(公告)日:2001-11-01
申请号:US09817696
申请日:2001-03-23
IPC分类号: B23K031/02 , B23K031/00
CPC分类号: H01L23/53238 , H01L21/288 , H01L23/53233 , H01L24/03 , H01L24/05 , H01L24/45 , H01L24/48 , H01L24/85 , H01L2224/04042 , H01L2224/05082 , H01L2224/05111 , H01L2224/05147 , H01L2224/05155 , H01L2224/05157 , H01L2224/05164 , H01L2224/05166 , H01L2224/05171 , H01L2224/0518 , H01L2224/05184 , H01L2224/05556 , H01L2224/05624 , H01L2224/05639 , H01L2224/05644 , H01L2224/05647 , H01L2224/05655 , H01L2224/05664 , H01L2224/05669 , H01L2224/0568 , H01L2224/45014 , H01L2224/45015 , H01L2224/45124 , H01L2224/45144 , H01L2224/45147 , H01L2224/4845 , H01L2224/48463 , H01L2224/48624 , H01L2224/48639 , H01L2224/48644 , H01L2224/48647 , H01L2224/48655 , H01L2224/48664 , H01L2224/48669 , H01L2224/4868 , H01L2224/48724 , H01L2224/48739 , H01L2224/48747 , H01L2224/48755 , H01L2224/48764 , H01L2224/48769 , H01L2224/4878 , H01L2224/48839 , H01L2224/48844 , H01L2224/48847 , H01L2224/48855 , H01L2224/48864 , H01L2224/4888 , H01L2224/78252 , H01L2224/78253 , H01L2224/85013 , H01L2224/85201 , H01L2224/85203 , H01L2224/85205 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01022 , H01L2924/01024 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/01042 , H01L2924/01047 , H01L2924/0105 , H01L2924/01073 , H01L2924/01074 , H01L2924/01075 , H01L2924/01076 , H01L2924/01078 , H01L2924/01079 , H01L2924/01327 , H01L2924/014 , H01L2924/04941 , H01L2924/04953 , H01L2924/05042 , H01L2924/10253 , H01L2924/14 , H01L2924/19043 , H01L2924/20751 , H01L2924/20752 , H01L2924/20753 , H01L2924/3025 , H01L2924/01004 , H01L2224/78 , H01L2924/00 , H01L2224/48824 , H01L2224/48869 , H01L2224/48744
摘要: A robust, reliable and low-cost metal structure and process enabling electrical wire/ribbon connections to the interconnecting copper metallization of integrated circuits. The structure comprises a layer of barrier metal that resists copper diffusion, deposited on the non-oxidized copper surface in a thickness such that the barrier layer reduces the diffusion of copper at 250null C. by more than 80% compared with the absence of the barrier metal. The structure further comprises an outermost bondable layer which reduces the diffusion of the barrier metal at 250null C. by more than 80% compared with the absence of the bondable metal. Finally, a metal wire is bonded to the outermost layer for metallurgical connection. The barrier metal is selected from a group consisting of nickel, cobalt, chromium, molybdenum, titanium, tungsten, and alloys thereof. The outermost bondable metal layer is selected from a group consisting of gold, platinum, and silver.
摘要翻译: 坚固,可靠和低成本的金属结构和工艺,使电线/带能够连接到集成电路的互连铜金属化。 该结构包括阻挡铜扩散的层,其沉积在非氧化的铜表面上,其厚度使得阻挡层将铜在250℃下的扩散减少了80%以上,与不存在 屏障金属。 该结构还包括最外面的可结合层,与不存在可结合金属相比,阻挡金属在250℃下的扩散减少大于80%。 最后,将金属丝结合到最外层用于冶金连接。 阻挡金属选自镍,钴,铬,钼,钛,钨及其合金。 最外层的可焊接金属层选自金,铂和银。
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公开(公告)号:US08222736B2
公开(公告)日:2012-07-17
申请号:US12054087
申请日:2008-03-24
申请人: Takeshi Igarashi
发明人: Takeshi Igarashi
IPC分类号: H01L23/52
CPC分类号: H01L24/03 , H01L24/05 , H01L24/06 , H01L24/45 , H01L24/48 , H01L24/49 , H01L2224/04042 , H01L2224/05155 , H01L2224/05164 , H01L2224/05166 , H01L2224/05178 , H01L2224/05181 , H01L2224/05552 , H01L2224/05624 , H01L2224/05644 , H01L2224/05647 , H01L2224/0568 , H01L2224/0603 , H01L2224/45015 , H01L2224/45124 , H01L2224/45144 , H01L2224/48463 , H01L2224/48624 , H01L2224/48644 , H01L2224/48647 , H01L2224/4868 , H01L2224/48724 , H01L2224/48747 , H01L2224/4878 , H01L2224/4911 , H01L2224/49111 , H01L2224/49175 , H01L2224/85205 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01022 , H01L2924/01023 , H01L2924/01028 , H01L2924/01029 , H01L2924/01031 , H01L2924/01033 , H01L2924/01042 , H01L2924/01046 , H01L2924/0105 , H01L2924/01073 , H01L2924/01074 , H01L2924/01077 , H01L2924/01079 , H01L2924/01327 , H01L2924/04941 , H01L2924/04953 , H01L2924/05042 , H01L2924/10329 , H01L2924/1033 , H01L2924/1305 , H01L2924/1306 , H01L2924/20752 , H01L2924/20754 , H01L2924/20755 , H01L2924/20756 , H01L2924/20757 , H01L2924/20758 , H01L2924/20759 , H01L2924/2076 , H01L2924/00014 , H01L2924/00 , H01L2224/48744 , H01L2924/00015 , H01L2924/2075
摘要: A semiconductor device includes: a pad that is formed on a semiconductor layer, contains Al, and has an interconnection portion that is formed outside a bonding area; an interconnection layer that contains Au and is electrically connected to the interconnection portion of the pad, an edge of the interconnection layer being formed outside of the bonding area; and a barrier layer that is provided between the interconnection portion and the interconnection layer.
摘要翻译: 半导体器件包括:形成在半导体层上的焊盘,其包含Al,并且具有形成在接合区域外的互连部分; 互连层,其包含Au并且电连接到所述焊盘的互连部分,所述互连层的边缘形成在所述接合区域的外部; 以及设置在所述互连部和所述互连层之间的阻挡层。
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公开(公告)号:US20120032329A1
公开(公告)日:2012-02-09
申请号:US13229887
申请日:2011-09-12
IPC分类号: H01L23/498
CPC分类号: H01L24/05 , H01L21/565 , H01L22/32 , H01L23/485 , H01L23/49816 , H01L24/06 , H01L24/12 , H01L24/16 , H01L24/45 , H01L24/46 , H01L24/48 , H01L24/49 , H01L24/73 , H01L24/78 , H01L24/81 , H01L24/85 , H01L25/0657 , H01L2224/02166 , H01L2224/02205 , H01L2224/0347 , H01L2224/0401 , H01L2224/04042 , H01L2224/05027 , H01L2224/05082 , H01L2224/05083 , H01L2224/05084 , H01L2224/05124 , H01L2224/05144 , H01L2224/05147 , H01L2224/05155 , H01L2224/05157 , H01L2224/05164 , H01L2224/05166 , H01L2224/05169 , H01L2224/05173 , H01L2224/05181 , H01L2224/05184 , H01L2224/05553 , H01L2224/05554 , H01L2224/05558 , H01L2224/05564 , H01L2224/05568 , H01L2224/05572 , H01L2224/05583 , H01L2224/05624 , H01L2224/05644 , H01L2224/05647 , H01L2224/05655 , H01L2224/05664 , H01L2224/05666 , H01L2224/0568 , H01L2224/06183 , H01L2224/1134 , H01L2224/13099 , H01L2224/13144 , H01L2224/13147 , H01L2224/16225 , H01L2224/2919 , H01L2224/29198 , H01L2224/32145 , H01L2224/32225 , H01L2224/32245 , H01L2224/4502 , H01L2224/45124 , H01L2224/45144 , H01L2224/45147 , H01L2224/45164 , H01L2224/46 , H01L2224/4807 , H01L2224/48095 , H01L2224/48145 , H01L2224/48158 , H01L2224/48247 , H01L2224/48453 , H01L2224/48465 , H01L2224/48471 , H01L2224/48507 , H01L2224/48624 , H01L2224/48639 , H01L2224/48644 , H01L2224/48647 , H01L2224/48655 , H01L2224/48664 , H01L2224/4868 , H01L2224/48724 , H01L2224/48739 , H01L2224/48744 , H01L2224/48747 , H01L2224/48755 , H01L2224/48764 , H01L2224/4878 , H01L2224/48824 , H01L2224/48839 , H01L2224/48844 , H01L2224/48847 , H01L2224/48855 , H01L2224/48864 , H01L2224/4888 , H01L2224/49171 , H01L2224/49175 , H01L2224/73204 , H01L2224/73265 , H01L2224/78301 , H01L2224/81193 , H01L2224/81801 , H01L2224/83101 , H01L2224/85181 , H01L2224/85186 , H01L2224/85205 , H01L2224/85207 , H01L2224/85439 , H01L2224/85444 , H01L2224/85464 , H01L2225/0651 , H01L2225/06517 , H01L2924/00011 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01011 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01018 , H01L2924/01019 , H01L2924/01022 , H01L2924/01024 , H01L2924/01025 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/01042 , H01L2924/01045 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01061 , H01L2924/01065 , H01L2924/01073 , H01L2924/01074 , H01L2924/01075 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01327 , H01L2924/014 , H01L2924/04941 , H01L2924/04953 , H01L2924/05042 , H01L2924/078 , H01L2924/09701 , H01L2924/10253 , H01L2924/12042 , H01L2924/1306 , H01L2924/13091 , H01L2924/14 , H01L2924/15311 , H01L2924/15787 , H01L2924/15788 , H01L2924/181 , H01L2924/19041 , H01L2924/19043 , H01L2924/3511 , H01L2924/00014 , H01L2924/01039 , H01L2924/0665 , H01L2224/48227 , H01L2924/00 , H01L2924/00012 , H01L2924/0002 , H01L2924/00015
摘要: In semiconductor integrated circuit devices for vehicle use, an aluminum pad on a semiconductor chip and an external device are coupled to each other by wire bonding using a gold wire for the convenience of mounting. Such a semiconductor integrated circuit device, however, causes a connection failure due to the interaction between aluminum and gold in use for a long time at a relatively high temperature (about 150 degrees C.). A semiconductor integrated circuit device can include a semiconductor chip as a part of the device, an electrolytic gold plated surface film (gold-based metal plated film) provided over an aluminum-based bonding pad on a semiconductor chip via a barrier metal film, and a gold bonding wire (gold-based bonding wire) for interconnection between the plated surface film and an external lead provided over a wiring board (wiring substrate).
摘要翻译: 在用于车辆用途的半导体集成电路器件中,半导体芯片上的铝焊盘和外部器件通过使用金线的引线接合彼此耦合以便于安装。 然而,这样的半导体集成电路器件在相对较高的温度(约150℃)下长时间使用铝和金之间的相互作用导致连接故障。 半导体集成电路器件可以包括作为器件的一部分的半导体芯片,经由阻挡金属膜设置在半导体芯片上的铝基焊盘上的电解镀金表面膜(金基金属镀膜),以及 用于在电镀表面膜和设置在布线板(布线基板)上的外部引线之间互连的金接合线(金基接合线)。
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公开(公告)号:US20100148244A1
公开(公告)日:2010-06-17
申请号:US11996855
申请日:2006-07-21
CPC分类号: H01L29/7806 , H01L24/06 , H01L24/45 , H01L24/48 , H01L24/49 , H01L27/0629 , H01L29/0619 , H01L29/0696 , H01L29/1602 , H01L29/1608 , H01L29/2003 , H01L29/47 , H01L29/66068 , H01L29/7811 , H01L2224/04042 , H01L2224/05554 , H01L2224/05624 , H01L2224/05666 , H01L2224/0568 , H01L2224/0603 , H01L2224/45015 , H01L2224/45124 , H01L2224/45144 , H01L2224/48091 , H01L2224/4813 , H01L2224/48247 , H01L2224/48472 , H01L2224/48624 , H01L2224/48666 , H01L2224/4868 , H01L2224/48724 , H01L2224/48766 , H01L2224/4878 , H01L2224/4903 , H01L2224/49051 , H01L2224/4911 , H01L2224/49175 , H01L2924/01005 , H01L2924/01006 , H01L2924/01007 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01018 , H01L2924/01022 , H01L2924/01023 , H01L2924/01027 , H01L2924/01028 , H01L2924/01033 , H01L2924/01042 , H01L2924/01079 , H01L2924/01082 , H01L2924/12032 , H01L2924/12036 , H01L2924/12041 , H01L2924/1305 , H01L2924/13055 , H01L2924/1306 , H01L2924/13091 , H01L2924/14 , H01L2924/19043 , H01L2924/30107 , H01L2924/00014 , H01L2924/00
摘要: In a semiconductor element (20) including a field effect transistor (90), a schottky electrode (9a) and a plurality of bonding pads (12S, 12G), at least one of the plurality of bonding pads (12S, 12G) is disposed so as to be located above the schottky electrode (9a).
摘要翻译: 在包括场效应晶体管(90),肖特基电极(9a)和多个接合焊盘(12S,12G)的半导体元件(20)中,设置多个接合焊盘(12S,12G)中的至少一个, 以便位于肖特基电极(9a)上方。
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