Abstract:
An electrical component and a method for the manufacture thereof, comprising a connection arrangement between an active surface of an electrical component and a carrier, wherein electrical connecting elements are disposed in a connection zone on the active surface and/or on the carrier, and at least one spacer element is provided, which is disposed on the active surface and/or on the carrier. The at least one spacer element has a smaller height than the connecting elements before the connecting elements are reflowed to produce the electrically conductive connection, and is preferably disposed in an edge region of the connection zone.
Abstract:
A method of assembling a package includes aligning a pad chip with a spring chip to form at least one interconnect in an interconnect area, adhering the pad chip to the spring chip so that there is a gap between the pad chip and the spring chip, dispensing underfill material into the gap to seal the interconnect area from an environment external to the package, and curing the underfill material to form a solid mold.
Abstract:
A method and apparatus for improving the thermal conductivity of a circuit board (CB) assembly comprising an integrated circuit (IC) die mounted on a CB. A high thermal conductivity device is attached on a first end to a surface of the die. When the die is mounted on the CB, a void formed in the CB receives a second end of the HTC device, and the second end of the HTC device comes into contact with a portion of the CB. During operation of the die, heat produced by the die is dissipated through the HTC device and into the CB.
Abstract:
A semiconductor device includes: a first semiconductor-chip including a first electrode; a second semiconductor-chip including a second electrode; and a switch including a core element configured to contract and expand by a temperature change, a heat generation unit configured to heat the core element, a first metal element configured to cover the core element and connected to the first electrode, and a second metal element configured to cover the core element and connected to the second electrode, wherein, when the core element contracts, the first metal element and the second metal element come in contact with each other so that the first semiconductor-chip and the second semiconductor-chip are electrically connected with each other, and when the core element expands, the first metal element and the second metal element become in non-contact with each other so that the first semiconductor-chip and the second semiconductor-chip are electrically separated from each other.
Abstract:
A method is provided for transferring a graphene sheet to metal contact bumps of a substrate that is to be used in a semiconductor device package, i.e. a stack of substrates connected by said contact bumps, e.g., copper contact bumps for which graphene forms a protective layer. An imprinter device can be used comprising an imprinter substrate, said substrate being provided with cavities, whereof each cavity is provided with a rim portion. The imprinter substrate is aligned with the substrate comprising the bumps and lowered onto said substrate so that each bump becomes enclosed by a cavity, until the rim portion of the cavities cuts through the graphene sheet, leaving graphene layer portions on top of each of bumps when the imprinter is removed. The graphene sheet is preferably attached to the substrate by imprinting it into a passivation layer surrounding the bumps.
Abstract:
In a system for providing temporary or permanent connection of an integrated circuit die to a base substrate using electrical microsprings, a thermal element is provided that assists with cooling of the pad structure during use. The thermal element may be formed of the same material and my similar processes as the microsprings. The thermal element may be one or more block structures or one or more thermal microsprings. The thermal element may be provided with channels to contain and/or direct the flow of a thermal transfer fluid. Cooling of components associated with the pad structure (e.g., ICs) may be provided.
Abstract:
Provided is a mounting structure capable of maintaining highly accurate connection reliability even when the temperature of the environment in which the mounting structure is used is high. Mounting structure (10) includes electronic component (11), metal (12), wiring substrate (13), and a preventing structure. Electronic component (11) includes first electrode (14). The melting point of metal (12) is 130° C. or less. Wiring substrate (13) includes second electrode (15) electrically connected to first electrode (14) via metal (12). The preventing structure prevents flowing-out of metal (12) in a melted state from a region where first electrode (14) and second electrode (15) are formed. Further, preventing structure (14) is formed in at least one member selected from electronic component (11) and wiring substrate (12).
Abstract:
A semiconductor device includes: a first semiconductor-chip including a first electrode; a second semiconductor-chip including a second electrode; and a switch including a core element configured to contract and expand by a temperature change, a heat generation unit configured to heat the core element, a first metal element configured to cover the core element and connected to the first electrode, and a second metal element configured to cover the core element and connected to the second electrode, wherein, when the core element contracts, the first metal element and the second metal element come in contact with each other so that the first semiconductor-chip and the second semiconductor-chip are electrically connected with each other, and when the core element expands, the first metal element and the second metal element become in non-contact with each other so that the first semiconductor-chip and the second semiconductor-chip are electrically separated from each other.
Abstract:
Standard solder-based interconnect structures are utilized as mechanical fasteners to attach an IC die in a “flip-chip” orientation to a support structure (e.g., a package base substrate or printed circuit board). Electrical connections between the support structure and the IC die are achieved by curved micro-springs that are disposed in peripheral regions of the IC die and extend through a gap region separating the upper structure surface and the processed surface of the IC die. The micro-springs are fixedly attached to one of the support structure and the IC die, and have a free (tip) end that contacts an associated contact pad disposed on the other structure/IC die. Conventional solder-based connection structures (e.g., solder-bumps/balls) are disposed on “dummy” (non-functional) pads disposed in a central region of the IC die. After placing the IC die on the support structure, a standard solder reflow process is performed to complete the mechanical connection.
Abstract:
A method of making a microelectronic assembly comprises providing a first side assembly juxtaposed with a second side assembly and a first resilient element disposed therebetween. Leads extend between the first side assembly and the second side assembly. A compressive force is applied to the juxtaposed assemblies so as to compress the first resilient element and the compressive force is at least partially released so as to allow the first resilient element to expand, thereby moving one or both of the first side assembly and the second side assembly to deform the leads.