公开(公告)号：US20160286147A1

公开(公告)日：2016-09-29

申请号：US15033408

申请日：2014-10-31

申请人： HAMAMATSU PHOTONICS K.K.

发明人： Shin-ichiro TAKAGI ,  Yasuhito YONETA ,  Hisanori SUZUKI ,  Masaharu MURAMATSU

IPC分类号： H04N5/378 ,  H01L27/146 ,  H04N5/225 ,  H01L27/148

CPC分类号： H04N5/378 ,  H01L27/14685 ,  H01L27/14812 ,  H01L27/14825 ,  H01L27/14837 ,  H04N5/2253

摘要： Each pixel region PX includes a photoelectric conversion region S1, a resistive gate electrode R, a first transfer electrode T1, a second transfer electrode T2, a barrier region B positioned directly beneath the first transfer electrode T1 in a semiconductor substrate 10, and a charge accumulation region S2 positioned directly beneath the second transfer electrode T2 in the semiconductor substrate 10. An impurity concentration of the barrier region B is lower than an impurity concentration of the charge accumulation region S2, and the first transfer electrode T1 and the second transfer electrode T2 are electrically connected to each other.

摘要翻译： 每个像素区域PX包括光电转换区域S1，电阻栅电极R，第一转移电极T1，第二转移电极T2，位于半导体衬底10中的第一转移电极T1正下方的势垒区域B，以及电荷 存储区域S2位于半导体衬底10中的第二传输电极T2正下方。势垒区域B的杂质浓度低于电荷累积区域S2的杂质浓度，第一传输电极T1和第二传输电极T2 彼此电连接。

公开(公告)号：US08139116B2

公开(公告)日：2012-03-20

申请号：US11812219

申请日：2007-06-15

申请人： Jin Murayama

发明人： Jin Murayama

IPC分类号： H04N5/33

CPC分类号： H04N9/045 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14837 ,  H01L27/14887 ,  H04N5/33 ,  H04N5/332 ,  H04N2209/045

摘要： A solid-state imaging device has a single plate structure and is capable of imaging of visible light and infrared light. While imaging of the visible light and the infrared light is performed by the imaging device every one-frame scanning period, an IR pulse is emitted, every other one-frame scanning period, to a space to be shot. A visible-light image is produced every one-frame scanning period. A range image from which influence to be caused by infrared component of the ambient light is removed is produced every other one-frame scanning period by subtracting an IR pixel image (S2IR), which is obtained by imaging of non-emission time of the IR pulse, from an IR pixel signal (S1IR), which is obtained by imaging of emission time of the IR pulse.

摘要翻译： 固态成像装置具有单板结构，并且能够对可见光和红外光进行成像。 当通过成像装置在每一帧扫描周期执行可见光和红外光的成像时，每隔一个一帧扫描周期将IR脉冲发射到待拍摄的空间。 每一帧扫描周期产生可见光图像。 通过减去通过对IR的非发光时间进行成像获得的IR像素图像（S2IR），每隔一个一帧扫描周期产生从环境光的红外分量引起的影响的范围图像 通过对IR脉冲的发射时间进行成像获得的IR像素信号（S1IR）产生脉冲。

公开(公告)号：US07830440B2

公开(公告)日：2010-11-09

申请号：US12168186

申请日：2008-07-07

申请人： Joseph R. Summa ,  Herbert J. Erhardt

发明人： Joseph R. Summa ,  Herbert J. Erhardt

IPC分类号： H04N3/14 ,  H04N5/335 ,  H04N9/04 ,  H04N9/083

CPC分类号： H01L27/14625 ,  H01L27/14837 ,  H04N9/045

摘要： An image sensor includes at least first and second photo-sensitive regions; a color filter array having at least two different colors that selectively absorb specific bands of wavelengths, and the two colors respectively span portions of predetermined photo-sensitive regions; and wherein the two photo sensitive regions are doped so that electrons that are released at two different depths in the substrate are collected in two separate regions of the photo sensitive regions so that, when wavelengths of light pass through the color filter array, light is absorbed by the photo sensitive regions which photo sensitive regions consequently releases electrons at two different depths of the photo sensitive regions and are stored in first and second separate regions; at least two charge-coupled devices adjacent the first photo sensitive regions; and a first transfer gate associated with the first photo sensitive region that selectively passes charge at first and second levels which, when at the first level, causes the charge stored in the first region to be passed to one of its associated charge-coupled devices, and when the transfer gate is at the second level, charge stored in the second region is passed to one of the associated charge-coupled devices.

摘要翻译： 图像传感器至少包括第一和第二光敏区域; 具有选择性地吸收特定波段的至少两种不同颜色的滤色器阵列，并且两种颜色分别跨越预定光敏区域的部分; 并且其中两个光敏区域被掺杂，使得在衬底中在两个不同深度释放的电子被收集在光敏区域的两个分开的区域中，使得当光的波长通过滤色器阵列时，光被吸收 通过光敏区域，这些光敏区域因此在光敏区域的两个不同深度处释放电子并且被存储在第一和第二分离区域中; 至少两个与第一光敏区相邻的电荷耦合器件; 以及与第一光敏区相关联的第一传输门，其选择性地在第一和第二电平通过电荷，当处于第一电平时，使第一区域中存储的电荷通过其相关联的电荷耦合器件中的一个， 并且当传输门处于第二电平时，存储在第二区域中的电荷被传递到相关联的电荷耦合器件中的一个。

公开(公告)号：US20100270459A1

公开(公告)日：2010-10-28

申请号：US12765936

申请日：2010-04-23

申请人： Carlos J.R.P. AUGUSTO

发明人： Carlos J.R.P. AUGUSTO

IPC分类号： H01L27/148

CPC分类号： H01L27/14609 ,  H01L27/14837 ,  H01L27/14843 ,  H01L27/1485 ,  H01L27/14868 ,  H01L31/02021 ,  H01L31/04

摘要： A photo-current mode of operation is disclosed for Full Frame CCDs, and Frame-Transfer CCDs, that is suitable for electrical power generation, when not in operation for image sensing, and for Interline-Transfer CCDs, that is suitable for image sensing, and also suitable electrical power generation, when not in operation for image sensing. Further, CMOS Image Sensors (CIS), including 1T Passive Pixels, or 1T Avalanche Photo-Diode Pixels, in which all pass transistors in the matrix are turned ON simultaneously thereby allowing the photo-current produced by each photo-diode in each pixel to flow towards the periphery where suitable circuitry will handle the photo-current for electrical power generation and/or storage. Also, CMOS Image Sensors (CIS), including any Active Pixel Sensor (APS) design, such as the 3T, or 3T Log, or 4T, or 5T, wherein each column-parallel VDD line connecting the Reset Transistors, or the Log Transistors, in a single column of pixels, to column-parallel circuitry at the edge of the pixel matrix, is connected through multiple pass transistors, to different column-parallel blocks of circuitry that are selected alternatively, and that include (1) a VDD voltage source for standard image sensing operation, (2) a block of circuitry suitable to handle photo-current signals for image sensing purposes, and (3) a block of circuitry that is suitable to handle photo-current for electrical power generation and/or storage purposes.

摘要翻译： 对于适用于图像感测不适用于发电的全帧CCD和帧转移CCD以及适用于图像感测的线间传输CCD，公开了光电流操作模式， 并且当不用于图像感测时也适合发电。 此外，包括1T无源像素或1T雪崩光电二极管像素的CMOS图像传感器（CIS），其中矩阵中的全部通过晶体管同时导通，从而允许每个像素中的每个光电二极管产生的光电流 流向外围，其中合适的电路将处理用于发电和/或存储的光电流。 此外，CMOS图像传感器（CIS）包括任何有源像素传感器（APS）设计，例如3T或3T Log，或4T或5T，其中连接复位晶体管的每个并联的VDD线或对数晶体管 在单个像素列中，在像素矩阵的边缘处的列并联电路通过多通道晶体管连接到可选择的不同列并联的电路块，并且包括（1）VDD电压 用于标准图像感测操作的源，（2）适于处理用于图像感测目的的光电流信号的电路块，以及（3）适于处理用于发电和/或存储的光电流的电路块 目的

公开(公告)号：US07777799B2

公开(公告)日：2010-08-17

申请号：US12168191

申请日：2008-07-07

申请人： Joseph R. Summa ,  Herbert J. Erhardt

发明人： Joseph R. Summa ,  Herbert J. Erhardt

IPC分类号： H04N3/14 ,  H04N5/335 ,  H04N9/04 ,  H04N9/083

CPC分类号： H01L27/14625 ,  H01L27/14837 ,  H04N9/045

摘要： An image sensor includes at least first and second photo-sensitive regions; a color filter array having at least two different colors that selectively absorb specific bands of wavelengths, and the two colors respectively span portions of predetermined photo-sensitive regions; and wherein the two photo sensitive regions are doped so that electrons that are released at two different depths in the substrate are collected in two separate regions of the photo sensitive regions so that, when wavelengths of light pass through the color filter array, light is absorbed by the photo sensitive regions which photo sensitive regions consequently releases electrons at two different depths of the photo sensitive regions and are stored in first and second separate regions; at least two charge-coupled devices adjacent the first photo sensitive regions; and a first transfer gate associated with the first photo sensitive region that selectively passes charge at first and second levels which, when at the first level, causes the charge stored in the first region to be passed to one of its associated charge-coupled devices, and when the transfer gate is at the second level, charge stored in the second region is passed to one of the associated charge-coupled devices.

公开(公告)号：US07772616B2

公开(公告)日：2010-08-10

申请号：US12230584

申请日：2008-09-02

申请人： Akihiko Naya

发明人： Akihiko Naya

IPC分类号： H01L27/148 ,  H01L29/768 ,  H01L31/0232

CPC分类号： H01L27/14818 ,  H01L27/14837 ,  H04N5/361

摘要： A solid-state imaging device includes a semiconductor substrate and a plurality of photoelectric conversion elements provided in the semiconductor substrate, wherein the plurality of photoelectric conversion elements include: effective photoelectric conversion elements which are photoelectric conversion elements for obtaining an imaging signal corresponding to light from a subject; and OB photoelectric conversion elements which are photoelectric conversion elements for obtaining a reference signal of an optical black level, and the solid-state imaging device further includes a first shielding layer provided at least over the effective pixel area as defined herein and having an opening provided at least over a part of the effective photoelectric conversion elements, and a second shielding layer provided over the OB pixel area as defined herein and electrically separated from the first shielding layer.

摘要翻译： 固体摄像器件包括半导体衬底和设置在半导体衬底中的多个光电转换元件，其中多个光电转换元件包括：有效的光电转换元件，它们是用于获得对应于来自 课程; 和OB光电转换元件，其是用于获得光学黑色电平的参考信号的光电转换元件，并且固态成像器件还包括至少设置在如本文所定义的有效像素区域上并具有开口的第一屏蔽层 至少一部分有效光电转换元件，以及设置在如本文所定义的OB像素区域上并与第一屏蔽层电分离的第二屏蔽层。

公开(公告)号：US07759752B2

公开(公告)日：2010-07-20

申请号：US12168184

申请日：2008-07-07

申请人： Joseph R. Summa ,  Herbert J. Erhardt

发明人： Joseph R. Summa ,  Herbert J. Erhardt

IPC分类号： H01L31/0232

CPC分类号： H01L27/14625 ,  H01L27/14837 ,  H04N9/045

摘要： An image sensor includes at least first and second photo-sensitive regions; a color filter array having at least two different colors that selectively absorb specific bands of wavelengths, and the two colors respectively span portions of predetermined photo-sensitive regions; and wherein the two photo sensitive regions are doped so that electrons that are released at two different depths in the substrate are collected in two separate regions of the photo sensitive regions so that, when wavelengths of light pass through the color filter array, light is absorbed by the photo sensitive regions which photo sensitive regions consequently releases electrons at two different depths of the photo sensitive regions and are stored in first and second separate regions; at least two charge-coupled devices adjacent the first photo sensitive regions; and a first transfer gate associated with the first photo sensitive region that selectively passes charge at first and second levels which, when at the first level, causes the charge stored in the first region to be passed to one of its associated charge-coupled devices, and when the transfer gate is at the second level, charge stored in the second region is passed to one of the associated charge-coupled devices.

公开(公告)号：US20080026504A1

公开(公告)日：2008-01-31

申请号：US11903873

申请日：2007-09-25

申请人： Yoshiaki Kitano ,  Nobuhiro Karasawa ,  Jun Kuroiwa ,  Hideshi Abe ,  Mitsuru Sato ,  Hiroaki Ohki

发明人： Yoshiaki Kitano ,  Nobuhiro Karasawa ,  Jun Kuroiwa ,  Hideshi Abe ,  Mitsuru Sato ,  Hiroaki Ohki

IPC分类号： H01L31/113

CPC分类号： H01L27/14843 ,  H01L27/14623 ,  H01L27/14689 ,  H01L27/14837

摘要： A solid-state image pickup device includes, in a substrate, a plurality of photoelectric conversion regions for subjecting incoming light to photoelectric conversion, a reading gate for reading a signal charge from the photoelectric conversion regions, and a transfer register (vertical register) for transferring the signal charge read by the reading gate. Therein, a groove is formed on the surface side of the substrate, and the transfer register and the reading gate are formed at the bottom part of the groove. With such a structure, in the solid-state image pickup device, reduction can be achieved for the smear characteristics, a reading voltage, noise, and others.

公开(公告)号：US07157352B2

公开(公告)日：2007-01-02

申请号：US10680548

申请日：2003-10-07

申请人： Hideo Yamanaka

发明人： Hideo Yamanaka

IPC分类号： H01L21/30

CPC分类号： H01L27/14618 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14634 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14643 ,  H01L27/14685 ,  H01L27/14687 ,  H01L27/14692 ,  H01L27/14837 ,  H01L27/14843 ,  H01L2224/05001 ,  H01L2224/05008 ,  H01L2224/05548 ,  H01L2224/05624 ,  H01L2224/16225 ,  H01L2224/45144 ,  H01L2924/00014 ,  H01L2924/13091 ,  H01L2924/00 ,  H01L2224/05099

摘要： A method for producing an ultra-thin semiconductor chip and an ultra-thin back-illuminated solid-state image pickup device utilizing a semiconductor layer formed on a support substrate via an insulating layer to improve separation performance of a semiconductor layer from a support substrate and thereby improve the productivity and quality. The method uses two porous peeling layers on opposite sides of a substrate to produce an ultra-thin substrate.

摘要翻译： 一种用于制造超薄半导体芯片的方法和利用经由绝缘层形成在支撑基板上的半导体层的超薄背照式固态图像拾取装置，以改善半导体层与支撑基板的分离性能，以及 从而提高生产力和质量。 该方法在衬底的相对侧上使用两个多孔剥离层以产生超薄衬底。

公开(公告)号：US20060108617A1

公开(公告)日：2006-05-25

申请号：US11324657

申请日：2006-01-03

申请人： Yoshiaki Kitano ,  Nobuhiro Karasawa ,  Jun Kuroiwa ,  Hideshi Abe ,  Mitsuru Sato ,  Hiroaki Ohki

发明人： Yoshiaki Kitano ,  Nobuhiro Karasawa ,  Jun Kuroiwa ,  Hideshi Abe ,  Mitsuru Sato ,  Hiroaki Ohki

IPC分类号： H01L31/113 ,  H01L31/062 ,  H01L31/00 ,  H01L29/768

CPC分类号： H01L27/14843 ,  H01L27/14623 ,  H01L27/14689 ,  H01L27/14837

摘要： A solid-state image pickup device includes, in a substrate, a plurality of photoelectric conversion regions for subjecting incoming light to photoelectric conversion, a reading gate for reading a signal charge from the photoelectric conversion regions, and a transfer register (vertical register) for transferring the signal charge read by the reading gate. Therein, a groove is formed on the surface side of the substrate, and the transfer register and the reading gate are formed at the bottom part of the groove. With such a structure, in the solid-state image pickup device, reduction can be achieved for the smear characteristics, a reading voltage, noise, and others.