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    Logic circuit including at least one resistor or one transistor having a saturable resistor field effect transistor structure
    5.
    发明授权
    Logic circuit including at least one resistor or one transistor having a saturable resistor field effect transistor structure 失效
    逻辑电路包括至少一个电阻器或一个具有可饱和电阻器场效应晶体管结构的晶体管

    公开(公告)号：US4394589A

    公开(公告)日：1983-07-19

    申请号：US323535

    申请日：1981-11-20

    申请人： Ngu T. Pham ,  Gerard Nuzillat

    发明人： Ngu T. Pham ,  Gerard Nuzillat

    IPC分类号： H01L29/73 ,  H01L21/331 ,  H01L21/338 ,  H01L27/06 ,  H01L27/095 ,  H01L27/26 ,  H01L29/80 ,  H01L29/812 ,  H01L47/00 ,  H03K19/0952 ,  H03K19/094

    CPC分类号： H03K19/0952 ,  H01L27/26 ,  H01L47/00

    摘要： A logic circuit including an input stage, wherein a first field-effect transistor is in series with a first saturable resistor interposed on the drain side in the supply of the first transistor, and an output stage including a second transistor which is identical with the first and has a supply on the drain side which is common with the input stage supply. The gate of the second transistor is connected to the drain of the first transistor. The supply circuit of the second transistor is closed across a forward-biased diode, and a second saturable resistor on the ground of the common supply is connected to the source of the first transistor. At least a selected of the field effect transistors or the saturable resistors has a saturable resistor structure formed of a layer of semiconductor material on a semi-insulating substrate. The material is doped to set up a dipolar domain in respect of an electric field which is higher than a so-called critical value. The saturable resistor structure further includes a groove cut in the semiconductor layer between two ohmic contacts so as to define a residual channel in the material. The dimensions of the groove are such that the critical value of the electric field is overstepped in respect of a value of the order of one volt of the voltage between the ohmic contacts.

    摘要翻译： 一种包括输入级的逻辑电路，其中第一场效应晶体管与插在第一晶体管的电源中的漏极侧的第一可饱和电阻串联，以及包括与第一晶体管相同的第二晶体管的输出级 并且在漏极侧具有与输入级电源相同的电源。 第二晶体管的栅极连接到第一晶体管的漏极。 第二晶体管的电源电路跨越正向偏置二极管闭合，并且公共电源的基极上的第二可饱和电阻器连接到第一晶体管的源极。 至少选择的场效应晶体管或可饱和电阻器具有由半绝缘基板上的半导体材料层形成的可饱和电阻器结构。 该材料被掺杂以在高于所谓的临界值的电场上建立偶极区域。 可饱和电阻器结构还包括在两个欧姆接触之间的半导体层中切割的槽，以便在该材料中限定残余通道。 凹槽的尺寸使得电场的临界值相对于欧姆接触之间的电压的一伏的值是超过的。

    NEGATIVE DIFFERENTIAL RESISTANCE DEVICE
    10.
    发明申请
    NEGATIVE DIFFERENTIAL RESISTANCE DEVICE 有权

    公开(公告)号：US20130307662A1

    公开(公告)日：2013-11-21

    申请号：US13982672

    申请日：2011-02-01

    申请人： Minxian Max Yang ,  R. Stanley Williams

    发明人： Minxian Max Yang ,  R. Stanley Williams

    IPC分类号： H01C7/10

    CPC分类号： H01C7/10 ,  H01C7/041 ,  H01C7/043 ,  H01L27/26 ,  H01L47/00

    摘要： Apparatus and methods related to negative differential resistance (NDR) are provided. An NDR device includes a spaced pair of electrodes and at least two different materials disposed there between. One of the two materials is characterized by negative thermal expansion, while the other material is characterized by positive thermal expansion. The two materials are further characterized by distinct electrical resistivities. The NDR device is characterized by a non-linear electrical resistance curve that includes a negative differential resistance range. The NDR device operates along the curve in accordance with an applied voltage across the pair of electrodes.