公开(公告)号：US20180040820A1

公开(公告)日：2018-02-08

申请号：US15669915

申请日：2017-08-05

申请人： Chris W. Mann ,  Kyle W. Hoover ,  Gennady Shvets

发明人： Chris W. Mann ,  Kyle W. Hoover ,  Gennady Shvets

IPC分类号： H01L47/02 ,  H01L27/26

CPC分类号： H01L47/023 ,  G01J5/0837 ,  H01L27/265 ,  H01L47/026 ,  H01Q1/248 ,  H01Q1/36 ,  H01Q15/008 ,  H03K17/58

摘要： A rectifier is provided for converting an oscillating electromagnetic field into a direct current and comprises an electrically conductive antenna layer configured to absorb electromagnetic radiation, an electrically conductive mirror layer configured to provide an electromagnetic mirror charge of the antenna layer, an electrically insulating tunnel barrier layer positioned between the antenna layer and the mirror layer, and an electronic circuit electrically connected between the conductive mirror layer and the conductive antenna layer. The rectifier employs a metamaterial configuration for room temperature rectification of radiation in regions of the electromagnetic spectrum comprising the MWIR and LWIR regions. Methods for use of the rectifier in rectifying and detecting radiation are described.

公开(公告)号：US4047199A

公开(公告)日：1977-09-06

申请号：US618554

申请日：1975-10-01

申请人： Shoei Kataoka ,  Yasuo Komaniya ,  Nobuo Hashizume ,  Kazutaka Tomizawa ,  Mitsuo Kawashima

发明人： Shoei Kataoka ,  Yasuo Komaniya ,  Nobuo Hashizume ,  Kazutaka Tomizawa ,  Mitsuo Kawashima

IPC分类号： H01L27/26 ,  H01L47/00

CPC分类号： H01L27/265 ,  H01L47/00

摘要： The invention disclosed relates to a bulk semiconductor device having a semiconductor element exhibiting a negative conductivity under a high electric field and being capable of generating a high electric field domain therein. The semiconductor device includes two ohmic electrodes disposed at opposite ends to apply a bias voltage, at least one means for generating a high electric field domain in the semiconductor device by means applying an input signal to the generating means, at least one means for inhibiting generation of a high electric field domain by means applying another input signal to the inhibiting means, and means for detecting the existence of the high electric field domain in the semiconductor device to produce an output signal.

摘要翻译： 本发明涉及具有半导体元件的体积半导体器件，该半导体元件在高电场下呈现负导电性并且能够在其中产生高电场域。 半导体器件包括设置在相对端以施加偏置电压的两个欧姆电极，至少一个用于通过向输入装置施加输入信号在半导体器件中产生高电场域的装置，至少一个用于抑制发电的装置 通过对禁止装置施加另一个输入信号的高电场域，以及用于检测半导体器件中高电场域的存在以产生输出信号的装置。

公开(公告)号：US20180358412A1

公开(公告)日：2018-12-13

申请号：US16005967

申请日：2018-06-12

申请人： Research & Business Foundation Sungkyunwan University

发明人： Jin Hong PARK ,  Jaewoo SHIM ,  Hae Won LEE

IPC分类号： H01L27/26 ,  H01L47/02 ,  H01L47/00

CPC分类号： H01L27/265 ,  H01L27/26 ,  H01L47/005 ,  H01L47/026

摘要： Provided is a multi-negative differential resistance device. The multi-negative differential resistance device includes a first negative differential resistance device and a second negative differential resistance device connected in parallel with the first negative differential resistance device, and a peak and a valley of the first negative differential resistance device and a peak and a valley of the second negative differential resistance device are synthesized, and, thus, the multi-negative differential resistance device has two peaks and two valleys.

公开(公告)号：US20020011604A1

公开(公告)日：2002-01-31

申请号：US09915499

申请日：2001-07-27

发明人： Motoji Yagura ,  John Kevin Twynam

IPC分类号： H01L031/0328 ,  H01L031/0336 ,  H01L031/072 ,  H01L031/109

CPC分类号： H01L21/8252 ,  H01L27/0605 ,  H01L27/265 ,  H01L29/872 ,  H03B9/12

摘要： A semiconductor device for milliwave band oscillation has a Gunn diode and a Schottky diode epitaxially formed on a same substrate and connected by a transmission line. The Gunn diode is provided with an anode-ohmic electrode and a cathode-ohmic electrode. The Schottky diode is provided with a Schottky electrode formed on an active layer of n-GaAs and an ohmic electrode formed on an ohmic electrode forming high-density layer. Formation of the Schottky electrode on the active layer having a low carrier density makes it possible not only to satisfactorily obtain the Schottky characteristic of the Schottky electrode but also to require no annealing at a high temperature after ion implantation for forming other active devices. Thus, epitaxial structure deterioration and contact resistance deterioration of the semiconductor device are prevented.

摘要翻译： 用于毫波波段振荡的半导体器件具有外延形成在同一衬底上并通过传输线连接的耿氏二极管和肖特基二极管。 耿氏二极管设有阳极 - 欧姆电极和阴极 - 欧姆电极。 肖特基二极管设置有形成在n-GaAs的有源层上的肖特基电极和形成在形成高密度层的欧姆电极上的欧姆电极。 在具有低载流子密度的有源层上形成肖特基电极使得不仅令人满意地获得肖特基电极的肖特基特性，而且在用于形成其它有源器件的离子注入之后也不需要在高温下进行退火。 因此，防止半导体器件的外延结构劣化和接触电阻劣化。

公开(公告)号：US4145624A

公开(公告)日：1979-03-20

申请号：US816692

申请日：1977-07-18

申请人： Lakshminarasimha C. Upadhyayula

发明人： Lakshminarasimha C. Upadhyayula

IPC分类号： H01L27/26 ,  H03K3/357 ,  H03K19/017 ,  H03K19/0185 ,  H03K19/10 ,  H03K19/08 ,  H03K19/40

CPC分类号： H01L27/265 ,  H03K19/017 ,  H03K19/018507 ,  H03K19/10 ,  H03K3/357

摘要： A field effect transistor (FET) is connected in series to a transferred electron logic device (TELD), the TELD being a non-linear load resistor for the FET. The current thresholding property of the TELD and the saturation characteristics of the FET are utilized to produce an output pulsed signal of substantial voltage gain with fast rise time and short pulse width. An output electrode is capacitively coupled to the TELD to provide an output pulsed signal of alternating polarity for direct interconnection of devices in cascaded circuits.

摘要翻译： 场效应晶体管（FET）与转移的电子逻辑器件（TELD）串联连接，TELD是用于FET的非线性负载电阻。 TELD的电流阈值特性和FET的饱和特性用于产生具有快速上升时间和短脉冲宽度的实质电压增益的输出脉冲信号。 输出电极电容耦合到TELD，以提供具有交替极性的输出脉冲信号，用于级联电路中的器件的直接互连。

公开(公告)号：US4107718A

公开(公告)日：1978-08-15

申请号：US784697

申请日：1977-04-05

申请人： Shoei Kataoka ,  Nobuo Hashizume ,  Hiroshi Kodera

发明人： Shoei Kataoka ,  Nobuo Hashizume ,  Hiroshi Kodera

IPC分类号： H01L27/26 ,  H01L47/02

CPC分类号： H01L47/02 ,  H01L27/265

摘要： A semiconductor device including a cathode and an anode for applying a bias electric field to a semiconductor exhibiting negative conductivity under high electric field, a region in which the electric field is locally lower than that in other regions, at least two signal electrodes of field effect type additionally provided in the region of said lower field to which signals are supplied to control the generation of high electric field domains for the performance of logical operations.

摘要翻译： 一种半导体器件，包括阴极和阳极，用于向在高电场下呈现负电导率的半导体施加偏置电场，其中电场局部低于其他区域的电场，场效应的至少两个信号电极 类型附加地提供在所述下场的区域中，信号被提供给所述下场以控制用于执行逻辑运算的高电场域的产生。

公开(公告)号：US3593046A

公开(公告)日：1971-07-13

申请号：US3593046D

申请日：1968-02-09

申请人： INT STANDARD ELECTRIC CORP

发明人： SANDBANK CARL PETER ,  THOMAS DAVID LANE

IPC分类号： H01L27/26 ,  H01L29/00 ,  H01L47/00 ,  H01L47/02 ,  H03K19/08

CPC分类号： H01L47/02 ,  H01L27/265 ,  H01L29/00

摘要： A communication system designed with semiconductive circuit arrangements using ''''Gunn Effect'''' devices exhibiting high field instability effects when an applied electrical field exceeds certain critical values. The transmitter has a plurality of ''''Gunn Effect'''' devices being connected to a separate input channel. Input signals are time division multiplexed and transmitted to a receiver having one ''''Gunn Effect'''' device with provision to separate the signals into their individual channels.