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公开(公告)号：US12113039B2
公开(公告)日：2024-10-08
申请号：US17245397
申请日：2021-04-30
Applicant: ALPHA ASSEMBLY SOLUTIONS INC.
Inventor： Shamik Ghoshal , Nirmalya Kumar Chaki , Poulami Sengupta Roy , Siuli Sarkar , Anubhav Rustogi
IPC: H01L23/00 , B22F1/052 , B22F1/102 , B22F1/107 , B22F1/17 , B22F7/04 , B23K1/00 , B23K35/02 , B23K35/30 , B23K35/36 , B23K35/365 , B23K101/40 , B23K103/00 , H01B1/22 , H01L25/00 , H05K3/32 , H10K50/842
CPC classification number: H01L24/29 , B22F1/052 , B22F1/102 , B22F1/107 , B22F1/17 , B22F7/04 , B23K1/0016 , B23K35/025 , B23K35/3006 , B23K35/3601 , B23K35/3613 , B23K35/3618 , B23K35/365 , H01B1/22 , H01L24/11 , H01L24/13 , H01L24/27 , H01L24/32 , H01L24/81 , H01L24/83 , B22F2007/047 , B22F2301/255 , B22F2302/45 , B23K2101/40 , B23K2103/56 , H01L24/16 , H01L24/48 , H01L24/73 , H01L24/92 , H01L25/50 , H01L2224/0401 , H01L2224/04026 , H01L2224/05155 , H01L2224/05644 , H01L2224/11003 , H01L2224/1132 , H01L2224/11334 , H01L2224/131 , H01L2224/13339 , H01L2224/13347 , H01L2224/13355 , H01L2224/13387 , H01L2224/1339 , H01L2224/13439 , H01L2224/1349 , H01L2224/13499 , H01L2224/16227 , H01L2224/27003 , H01L2224/271 , H01L2224/27332 , H01L2224/27436 , H01L2224/27505 , H01L2224/2929 , H01L2224/29339 , H01L2224/29347 , H01L2224/29355 , H01L2224/29387 , H01L2224/2939 , H01L2224/29439 , H01L2224/2949 , H01L2224/29499 , H01L2224/32145 , H01L2224/32146 , H01L2224/32225 , H01L2224/32245 , H01L2224/48227 , H01L2224/48247 , H01L2224/73265 , H01L2224/81075 , H01L2224/81192 , H01L2224/81203 , H01L2224/8121 , H01L2224/8184 , H01L2224/81948 , H01L2224/83075 , H01L2224/83191 , H01L2224/83192 , H01L2224/83203 , H01L2224/8321 , H01L2224/83439 , H01L2224/83447 , H01L2224/8384 , H01L2224/83948 , H01L2224/92247 , H01L2224/94 , H01L2924/00014 , H01L2924/0665 , H01L2924/12041 , H01L2924/12044 , H01L2924/1461 , H01L2924/20102 , H01L2924/20103 , H01L2924/20104 , H01L2924/20105 , H01L2924/20106 , H01L2924/20107 , H01L2924/20108 , H01L2924/20109 , H01L2924/2011 , H01L2924/206 , H01L2924/2064 , H05K3/321 , H10K50/8426 , H01L2224/83203 , H01L2924/00012 , H01L2224/94 , H01L2224/83 , H01L2224/29339 , H01L2924/0105 , H01L2224/29339 , H01L2924/01046 , H01L2224/29339 , H01L2924/01047 , H01L2224/29339 , H01L2924/01029 , H01L2224/29339 , H01L2924/01028 , H01L2224/29439 , H01L2924/00014 , H01L2224/29355 , H01L2924/00014 , H01L2224/29347 , H01L2924/01028 , H01L2224/29347 , H01L2924/01028 , H01L2924/0103 , H01L2224/29387 , H01L2924/0493 , H01L2924/01004 , H01L2224/2949 , H01L2924/00012 , H01L2224/2939 , H01L2924/0665 , H01L2224/271 , H01L2924/00014 , H01L2224/27436 , H01L2924/00014 , H01L2224/94 , H01L2224/27 , H01L2224/05155 , H01L2924/00014 , H01L2224/05644 , H01L2924/00014 , H01L2224/83439 , H01L2924/00014 , H01L2224/83447 , H01L2924/01074 , H01L2224/8321 , H01L2924/00014 , H01L2224/81203 , H01L2924/00012 , H01L2224/94 , H01L2224/81 , H01L2224/13339 , H01L2924/0105 , H01L2224/13339 , H01L2924/01046 , H01L2224/13339 , H01L2924/01047 , H01L2224/13339 , H01L2924/01029 , H01L2224/13339 , H01L2924/01028 , H01L2224/13439 , H01L2924/00014 , H01L2224/13355 , H01L2924/00014 , H01L2224/13347 , H01L2924/01028 , H01L2224/13347 , H01L2924/01028 , H01L2924/0103 , H01L2224/13387 , H01L2924/0493 , H01L2924/01004 , H01L2224/1349 , H01L2924/00012 , H01L2224/1339 , H01L2924/0665 , H01L2224/131 , H01L2924/00014 , H01L2224/11436 , H01L2924/00014 , H01L2224/94 , H01L2224/11 , H01L2224/8121 , H01L2924/00014 , H01L2924/00014 , H01L2224/45099 , H01L2224/1132 , H01L2924/00014 , H01L2224/73265 , H01L2224/32225 , H01L2224/48227 , H01L2924/00012 , H01L2224/73265 , H01L2224/32245 , H01L2224/48247 , H01L2924/00012 , H01L2224/73265 , H01L2224/32145 , H01L2224/48247 , H01L2924/00 , H01L2224/73265 , H01L2224/32145 , H01L2224/48227 , H01L2924/00 , H01L2224/92247 , H01L2224/73265 , H01L2224/32225 , H01L2224/48227 , H01L2924/00 , H01L2224/92247 , H01L2224/73265 , H01L2224/32245 , H01L2224/48247 , H01L2924/00
Abstract: A sintering powder comprising:
a first type of metal particles having a mean longest dimension of from 100 nm to 50 μm.
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2.发明公开
公开(公告)号：US20240321804A1
公开(公告)日：2024-09-26
申请号：US18489886
申请日：2023-10-19
Applicant: Samsung Electronics Co., Ltd.
Inventor： Dowan Kim , Jieun Woo , Unbyoung Kang , Seokbong Park
CPC classification number: H01L24/20 , H01L21/568 , H01L23/3128 , H01L24/16 , H01L24/19 , H01L25/18 , H10B80/00 , H01L2224/16227 , H01L2224/19 , H01L2224/2101 , H01L2224/215 , H01L2224/2201 , H01L2924/01004 , H01L2924/01012 , H01L2924/01013 , H01L2924/01022 , H01L2924/01024 , H01L2924/01025 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/01031 , H01L2924/01042 , H01L2924/01044 , H01L2924/01049 , H01L2924/0105 , H01L2924/01073 , H01L2924/01074 , H01L2924/01075 , H01L2924/0132 , H01L2924/04941 , H01L2924/04953 , H01L2924/1431 , H01L2924/1432 , H01L2924/1433 , H01L2924/14361 , H01L2924/1437 , H01L2924/1441 , H01L2924/1443
Abstract: A semiconductor package a first package unit comprising a semiconductor chip; and a redistribution structure on the first package unit, wherein the redistribution structure comprises a plurality of wiring lines and a plurality of insulating layers on the plurality of wiring lines, wherein the plurality of wiring lines comprise first subset including a plurality of outermost wiring lines and a second subset, wherein a vertical distance between the plurality of outermost wiring lines and the first package unit is greater than a vertical distance between the second subset of the plurality of wiring lines and the first package unit, a respective surface roughness of each of the plurality of outermost wiring lines is different, and the respective surface roughness of each of the plurality of outermost wiring lines is based on a respective width of each of the plurality of outermost wiring lines in a horizontal direction.
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公开(公告)号：US12068187B2
公开(公告)日：2024-08-20
申请号：US18424790
申请日：2024-01-27
Applicant: Monolithic 3D Inc.
Inventor： Zvi Or-Bach , Brian Cronquist , Deepak C. Sekar
IPC: H01L21/683 , G11C8/16 , H01L21/74 , H01L21/762 , H01L21/768 , H01L21/822 , H01L21/8238 , H01L21/84 , H01L23/48 , H01L23/525 , H01L27/02 , H01L27/06 , H01L27/092 , H01L27/10 , H01L27/105 , H01L27/118 , H01L27/12 , H01L29/423 , H01L29/66 , H01L29/78 , H01L29/788 , H01L29/792 , H10B10/00 , H10B12/00 , H10B20/00 , H10B41/20 , H10B41/40 , H10B41/41 , H10B43/20 , H10B43/40 , H01L23/00 , H01L23/367 , H01L25/00 , H01L25/065 , H10B20/20
CPC classification number: H01L21/6835 , G11C8/16 , H01L21/743 , H01L21/76254 , H01L21/76898 , H01L21/8221 , H01L21/823828 , H01L21/84 , H01L23/481 , H01L23/5252 , H01L27/0207 , H01L27/0688 , H01L27/092 , H01L27/10 , H01L27/105 , H01L27/11807 , H01L27/11898 , H01L27/1203 , H01L29/4236 , H01L29/66272 , H01L29/66621 , H01L29/66825 , H01L29/66833 , H01L29/66901 , H01L29/78 , H01L29/7841 , H01L29/7843 , H01L29/7881 , H01L29/792 , H10B10/00 , H10B10/125 , H10B12/053 , H10B12/09 , H10B12/20 , H10B12/50 , H10B20/00 , H10B41/20 , H10B41/40 , H10B41/41 , H10B43/20 , H10B43/40 , H01L23/3677 , H01L24/13 , H01L24/16 , H01L24/45 , H01L24/48 , H01L25/0655 , H01L25/0657 , H01L25/50 , H01L27/1214 , H01L27/1266 , H01L2221/68368 , H01L2223/5442 , H01L2223/54426 , H01L2224/131 , H01L2224/16145 , H01L2224/16146 , H01L2224/16227 , H01L2224/16235 , H01L2224/32145 , H01L2224/32225 , H01L2224/45124 , H01L2224/45147 , H01L2224/48091 , H01L2224/48227 , H01L2224/73204 , H01L2224/73253 , H01L2224/73265 , H01L2224/81005 , H01L2224/83894 , H01L2225/06513 , H01L2225/06541 , H01L2924/00011 , H01L2924/01002 , H01L2924/01004 , H01L2924/01013 , H01L2924/01018 , H01L2924/01019 , H01L2924/01029 , H01L2924/01046 , H01L2924/01066 , H01L2924/01068 , H01L2924/01077 , H01L2924/01078 , H01L2924/01322 , H01L2924/10253 , H01L2924/10329 , H01L2924/12032 , H01L2924/12033 , H01L2924/12036 , H01L2924/12042 , H01L2924/1301 , H01L2924/1305 , H01L2924/13062 , H01L2924/13091 , H01L2924/14 , H01L2924/1461 , H01L2924/15311 , H01L2924/1579 , H01L2924/16152 , H01L2924/181 , H01L2924/19041 , H01L2924/30105 , H01L2924/3011 , H01L2924/3025 , H10B12/05 , H10B20/20
Abstract: A 3D semiconductor device, the device including: a first level including a first single crystal layer, the first level including first transistors, where each of the first transistors includes a single crystal channel; first metal layer; a second metal layer overlaying the first metal layer; and a second level including a second single crystal layer, the second level including second transistors and at least one third metal layer, where the second level overlays the first level, where at least one of the second transistors includes a transistor channel, where the second level includes a plurality of DRAM memory cells, where each of the plurality of DRAM memory cells includes at least one of the second transistors and one capacitor, where the second level is directly bonded to the first level, and where the bonded includes metal to metal bonds.
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公开(公告)号：US20240055384A1
公开(公告)日：2024-02-15
申请号：US18496069
申请日：2023-10-27
Applicant: ROHM CO., LTD.
Inventor： Kazumasa TANIDA , Osamu MIYATA
IPC: H01L23/00 , H01L23/31 , H01L23/498 , H01L21/56 , H01L23/52
CPC classification number: H01L24/16 , H01L23/3157 , H01L23/49811 , H01L24/17 , H01L21/563 , H01L24/28 , H01L23/52 , H01L23/3185 , H01L23/49816 , H01L23/49838 , H01L23/562 , H01L24/32 , H01L24/73 , H01L24/81 , H01L24/83 , H01L23/3142 , H01L2924/3512 , H01L2224/01 , H01L2924/183 , H01L2924/153 , H01L24/01 , H01L2224/05573 , H01L2224/05568 , H01L2924/00014 , H01L2924/01006 , H01L2224/26175 , H01L2924/14 , H01L2224/16225 , H01L2224/73204 , H01L2224/83102 , H01L2224/92125 , H01L2924/01004 , H01L2924/01015 , H01L2924/01033 , H01L2924/01075 , H01L2224/32225 , H01L2224/0554 , H01L24/75 , H01L2224/16227 , H01L2224/75252 , H01L2224/81191 , H01L2224/81815 , H10K50/8426
Abstract: A semiconductor device includes a wiring board, a semiconductor chip, and a connecting member provided between a surface of the wiring board and a functional surface of the semiconductor chip. The connecting member extends a distance between the wiring board surface and the functional surface. A sealing material seals a gap space between the wiring board and the semiconductor chip. An electrode is formed at the wiring board surface and arranged outside of an outer periphery of the sealing material. A lateral distance between an outer periphery of the semiconductor chip and the outer periphery of the sealing material is between 0.1 mm and a lateral distance from the outer periphery of the semiconductor chip to the electrode.
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公开(公告)号：US11887969B2
公开(公告)日：2024-01-30
申请号：US17682773
申请日：2022-02-28
Applicant: Lodestar Licensing Group, LLC
Inventor： Brent Keeth , Mark Hiatt , Terry R. Lee , Mark Tuttle , Rahul Advani , John F. Schreck
IPC: H01L25/065 , H01L23/50 , H01L23/66 , H01L23/538
CPC classification number: H01L25/0657 , H01L23/50 , H01L23/66 , H01L25/0655 , H01L23/5385 , H01L2223/6677 , H01L2224/0401 , H01L2224/06181 , H01L2224/14181 , H01L2224/16145 , H01L2224/16146 , H01L2224/16225 , H01L2224/16227 , H01L2224/16235 , H01L2224/17181 , H01L2225/0652 , H01L2225/06513 , H01L2225/06517 , H01L2225/06541 , H01L2225/06572 , H01L2924/01004 , H01L2924/15192 , H01L2924/15311 , Y10T29/49155 , Y10T29/49165 , Y10T29/5313 , Y10T29/5317
Abstract: Some embodiments include apparatus, systems, and methods having a base, a first die, a second arranged in a stacked with the first die and the base, and a structure located in the stack and outside at least one of the first and second dice and configured to transfer signals between the base and at least one of the first and second dice.
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公开(公告)号：US11876011B2
公开(公告)日：2024-01-16
申请号：US18215062
申请日：2023-06-27
Applicant: Monolithic 3D Inc.
Inventor： Zvi Or-Bach , Brian Cronquist , Deepak C. Sekar
IPC: H01L27/02 , H01L27/06 , H01L27/092 , H01L27/10 , H01L27/105 , H01L27/118 , H01L27/12 , H01L29/423 , H01L29/66 , H01L29/78 , H01L29/788 , H01L21/683 , H01L21/74 , H01L21/762 , H01L21/768 , H01L21/822 , H01L21/8238 , H01L21/84 , H01L23/48 , H01L23/525 , H01L29/792 , G11C8/16 , H10B10/00 , H10B12/00 , H10B20/00 , H10B41/20 , H10B41/40 , H10B41/41 , H10B43/20 , H10B43/40 , H01L23/367 , H01L25/065 , H01L25/00 , H01L23/00 , H10B20/20
CPC classification number: H01L21/6835 , G11C8/16 , H01L21/743 , H01L21/76254 , H01L21/76898 , H01L21/8221 , H01L21/823828 , H01L21/84 , H01L23/481 , H01L23/5252 , H01L27/0207 , H01L27/0688 , H01L27/092 , H01L27/10 , H01L27/105 , H01L27/11807 , H01L27/11898 , H01L27/1203 , H01L29/4236 , H01L29/66272 , H01L29/66621 , H01L29/66825 , H01L29/66833 , H01L29/66901 , H01L29/78 , H01L29/7841 , H01L29/7843 , H01L29/7881 , H01L29/792 , H10B10/00 , H10B10/125 , H10B12/053 , H10B12/09 , H10B12/20 , H10B12/50 , H10B20/00 , H10B41/20 , H10B41/40 , H10B41/41 , H10B43/20 , H10B43/40 , H01L23/3677 , H01L24/13 , H01L24/16 , H01L24/45 , H01L24/48 , H01L25/0655 , H01L25/0657 , H01L25/50 , H01L27/1214 , H01L27/1266 , H01L2221/68368 , H01L2223/5442 , H01L2223/54426 , H01L2224/131 , H01L2224/16145 , H01L2224/16146 , H01L2224/16227 , H01L2224/16235 , H01L2224/32145 , H01L2224/32225 , H01L2224/45124 , H01L2224/45147 , H01L2224/48091 , H01L2224/48227 , H01L2224/73204 , H01L2224/73253 , H01L2224/73265 , H01L2224/81005 , H01L2224/83894 , H01L2225/06513 , H01L2225/06541 , H01L2924/00011 , H01L2924/01002 , H01L2924/01004 , H01L2924/01013 , H01L2924/01018 , H01L2924/01019 , H01L2924/01029 , H01L2924/01046 , H01L2924/01066 , H01L2924/01068 , H01L2924/01077 , H01L2924/01078 , H01L2924/01322 , H01L2924/10253 , H01L2924/10329 , H01L2924/12032 , H01L2924/12033 , H01L2924/12036 , H01L2924/12042 , H01L2924/1301 , H01L2924/1305 , H01L2924/13062 , H01L2924/13091 , H01L2924/14 , H01L2924/1461 , H01L2924/1579 , H01L2924/15311 , H01L2924/16152 , H01L2924/181 , H01L2924/19041 , H01L2924/3011 , H01L2924/3025 , H01L2924/30105 , H10B12/05 , H10B20/20
Abstract: A 3D semiconductor device, the device including: a first level including a first single crystal layer, the first level including first transistors, where each of the first transistors includes a single crystal channel; first metal layers interconnecting at least the first transistors; a second metal layer overlaying the first metal layers; and a second level including a second single crystal layer, the second level including second transistors, where the second level overlays the first level, where at least one of the second transistors includes a raised source or raised drain transistor structure, where the second level is directly bonded to the first level, and where the bonded includes direct oxide-to-oxide bonds.
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公开(公告)号：US11854946B2
公开(公告)日：2023-12-26
申请号：US17864064
申请日：2022-07-13
Applicant: KIOXIA CORPORATION
Inventor： Isao Ozawa
IPC: H01L23/495 , H01L23/28 , H01L23/00
CPC classification number: H01L23/495 , H01L23/28 , H01L23/4951 , H01L23/49575 , H01L24/49 , H01L24/48 , H01L2224/48091 , H01L2224/48247 , H01L2224/48257 , H01L2224/49171 , H01L2225/06562 , H01L2924/00014 , H01L2924/01002 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01019 , H01L2924/01023 , H01L2924/01033 , H01L2924/01037 , H01L2924/01058 , H01L2924/01075 , H01L2924/01082 , H01L2924/07802 , H01L2924/12042 , H01L2924/14 , H01L2924/1532 , H01L2924/181 , H01L2924/3025 , H01L2224/48091 , H01L2924/00014 , H01L2224/49171 , H01L2224/48247 , H01L2924/00 , H01L2924/07802 , H01L2924/00 , H01L2924/00014 , H01L2224/45099 , H01L2924/00014 , H01L2224/05599 , H01L2924/12042 , H01L2924/00 , H01L2924/181 , H01L2924/00012
Abstract: A semiconductor device includes a semiconductor chip with bonding pads, the bonding pads being arranged along one side of an element forming surface of the semiconductor chip, a lead frame including first and second internal leads arranged such that tips thereof correspond to some of the bonding pads of the semiconductor chip, and first and second bonding vires by which the first internal leads and the some of the bonding pads are bonded to each other. The semiconductor device further includes a hanging pin section provided on the element non-forming surface of the semiconductor chip, and a sealing member with which the semiconductor chip is sealed including the hanging pin section and a bonding section between the first and second internal leads and the first and second bonding wires.
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公开(公告)号：US11784082B2
公开(公告)日：2023-10-10
申请号：US18092337
申请日：2023-01-01
Applicant: Monolithic 3D Inc.
Inventor： Zvi Or-Bach , Brian Cronquist , Deepak C. Sekar
IPC: H01L21/683 , H01L21/74 , H01L21/762 , H01L21/768 , H01L21/822 , H01L21/8238 , H01L21/84 , H01L23/48 , H01L23/525 , H01L27/02 , H01L27/06 , H01L27/092 , H01L27/10 , H01L27/105 , H01L27/118 , H01L27/12 , H01L29/423 , H01L29/66 , H01L29/78 , H01L29/788 , H01L29/792 , G11C8/16 , H10B10/00 , H10B12/00 , H10B20/00 , H10B41/20 , H10B41/40 , H10B41/41 , H10B43/20 , H10B43/40 , H01L23/367 , H01L25/065 , H01L25/00 , H01L23/00 , H10B20/20
CPC classification number: H01L21/6835 , G11C8/16 , H01L21/743 , H01L21/76254 , H01L21/76898 , H01L21/8221 , H01L21/823828 , H01L21/84 , H01L23/481 , H01L23/5252 , H01L27/0207 , H01L27/0688 , H01L27/092 , H01L27/10 , H01L27/105 , H01L27/11807 , H01L27/11898 , H01L27/1203 , H01L29/4236 , H01L29/66272 , H01L29/66621 , H01L29/66825 , H01L29/66833 , H01L29/66901 , H01L29/78 , H01L29/7841 , H01L29/7843 , H01L29/7881 , H01L29/792 , H10B10/00 , H10B10/125 , H10B12/053 , H10B12/09 , H10B12/20 , H10B12/50 , H10B20/00 , H10B41/20 , H10B41/40 , H10B41/41 , H10B43/20 , H10B43/40 , H01L23/3677 , H01L24/13 , H01L24/16 , H01L24/45 , H01L24/48 , H01L25/0655 , H01L25/0657 , H01L25/50 , H01L27/1214 , H01L27/1266 , H01L2221/68368 , H01L2223/5442 , H01L2223/54426 , H01L2224/131 , H01L2224/16145 , H01L2224/16146 , H01L2224/16227 , H01L2224/16235 , H01L2224/32145 , H01L2224/32225 , H01L2224/45124 , H01L2224/45147 , H01L2224/48091 , H01L2224/48227 , H01L2224/73204 , H01L2224/73253 , H01L2224/73265 , H01L2224/81005 , H01L2224/83894 , H01L2225/06513 , H01L2225/06541 , H01L2924/00011 , H01L2924/01002 , H01L2924/01004 , H01L2924/01013 , H01L2924/01018 , H01L2924/01019 , H01L2924/01029 , H01L2924/01046 , H01L2924/01066 , H01L2924/01068 , H01L2924/01077 , H01L2924/01078 , H01L2924/01322 , H01L2924/10253 , H01L2924/10329 , H01L2924/12032 , H01L2924/12033 , H01L2924/12036 , H01L2924/12042 , H01L2924/1301 , H01L2924/1305 , H01L2924/13062 , H01L2924/13091 , H01L2924/14 , H01L2924/1461 , H01L2924/1579 , H01L2924/15311 , H01L2924/16152 , H01L2924/181 , H01L2924/19041 , H01L2924/3011 , H01L2924/3025 , H01L2924/30105 , H10B12/05 , H10B20/20
Abstract: A 3D semiconductor device, the device comprising: a first level comprising a first single crystal layer, said first level comprising first transistors, wherein each of said first transistors comprises a single crystal channel; first metal layers interconnecting at least said first transistors; a second metal layer overlaying said first metal layers; and a second level comprising a second single crystal layer, said second level comprising second transistors, wherein said second level overlays said first level, wherein at least one of said first transistors controls power delivery for at least one of said second transistor, wherein said second level is directly bonded to said first level, and wherein said bonded comprises direct oxide to oxide bonds.
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公开(公告)号：US11688659B2
公开(公告)日：2023-06-27
申请号：US17002238
申请日：2020-08-25
Applicant: KIOXIA CORPORATION
Inventor： Yoshiaki Goto
IPC: H01L23/31 , H01L23/495 , H01L23/00 , H01L23/498
CPC classification number: H01L23/3142 , H01L23/4951 , H01L23/4952 , H01L23/49513 , H01L23/49524 , H01L23/49541 , H01L23/49575 , H01L24/32 , H01L24/49 , H01L23/49544 , H01L23/49555 , H01L23/49861 , H01L24/45 , H01L24/48 , H01L24/73 , H01L2224/32057 , H01L2224/32145 , H01L2224/32245 , H01L2224/45144 , H01L2224/45147 , H01L2224/48091 , H01L2224/48145 , H01L2224/48147 , H01L2224/48247 , H01L2224/49 , H01L2224/73265 , H01L2224/83385 , H01L2224/97 , H01L2225/06562 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01029 , H01L2924/01033 , H01L2924/01057 , H01L2924/01079 , H01L2924/01082 , H01L2924/07802 , H01L2924/181 , H01L2224/45144 , H01L2924/00014 , H01L2224/45147 , H01L2924/00014 , H01L2224/48091 , H01L2924/00014 , H01L2224/48091 , H01L2924/00014 , H01L2224/73265 , H01L2224/32245 , H01L2224/48247 , H01L2224/73265 , H01L2224/32145 , H01L2224/48247 , H01L2224/48145 , H01L2224/45147 , H01L2924/00 , H01L2924/00012 , H01L2224/73265 , H01L2224/32145 , H01L2224/48145 , H01L2924/00012 , H01L2924/07802 , H01L2924/00 , H01L2924/181 , H01L2924/00012
Abstract: A lead frame includes a first outer lead portion and a second outer lead portion which is arranged to oppose to the first outer lead portion with an element-mounting region between them. An inner lead portion has first inner leads connected to the first outer leads and second inner leads connected to the second outer leads. At least either the first or second inner leads are routed in the element-mounting region. An insulation resin is filled in the gaps between the inner leads located on the element-mounting region. A semiconductor device is configured with semiconductor elements mounted on both the top and bottom surfaces of the lead frame.
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公开(公告)号：US20230187275A1
公开(公告)日：2023-06-15
申请号：US18164153
申请日：2023-02-03
Applicant: RENESAS ELECTRONICS CORPORATION
Inventor： Katsuhiko HOTTA , Kyoko SASAHARA
IPC: H01L21/768 , H01L21/8238 , H01L23/525 , H01L23/532 , H01L23/00 , H01L23/522 , H01L23/528 , H01L21/8234
CPC classification number: H01L21/76832 , H01L21/76808 , H01L21/76811 , H01L21/76834 , H01L21/76841 , H01L21/76895 , H01L21/823475 , H01L21/823871 , H01L23/528 , H01L23/5226 , H01L23/5258 , H01L23/5283 , H01L23/5329 , H01L23/53209 , H01L23/53238 , H01L23/53295 , H01L24/11 , H01L2224/13099 , H01L2924/00 , H01L2924/014 , H01L2924/14 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01019 , H01L2924/01022 , H01L2924/01027 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01073 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/1306 , H01L2924/04941 , H01L2924/04953 , H01L2924/12042 , H01L2924/19043 , H01L2924/30105
Abstract: For simplifying the dual-damascene formation steps of a multilevel Cu interconnect, a formation step of an antireflective film below a photoresist film is omitted. Described specifically, an interlayer insulating film is dry etched with a photoresist film formed thereover as a mask, and interconnect trenches are formed by terminating etching at the surface of a stopper film formed in the interlayer insulating film. The stopper film is made of an SiCN film having a low optical reflectance, thereby causing it to serve as an antireflective film when the photoresist film is exposed.
