公开(公告)号：USRE49987E1

公开(公告)日：2024-05-28

申请号：US17725442

申请日：2022-04-20

Applicant: Invensas LLC

Inventor： Cyprian Emeka Uzoh ,  Rajesh Katkar

IPC: H01L25/065 ,  B81B7/00 ,  B81C1/00 ,  H01L21/48 ,  H01L23/00 ,  H01L23/367 ,  H01L23/42 ,  H01L23/48 ,  H01L23/498 ,  H01L23/522 ,  H01L23/538 ,  H01L25/00 ,  H01L25/16 ,  H01L49/02

CPC classification number: H01L25/0657 ,  B81B7/0074 ,  B81C1/0023 ,  H01L21/4853 ,  H01L23/3675 ,  H01L23/42 ,  H01L23/481 ,  H01L23/49811 ,  H01L23/522 ,  H01L23/5383 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L24/14 ,  H01L24/16 ,  H01L24/24 ,  H01L24/49 ,  H01L24/73 ,  H01L24/94 ,  H01L24/97 ,  H01L25/0652 ,  H01L25/16 ,  H01L25/50 ,  H01L28/10 ,  H01L28/20 ,  H01L28/40 ,  H01L24/02 ,  H01L24/17 ,  H01L24/32 ,  H01L24/33 ,  H01L24/45 ,  H01L24/48 ,  H01L24/81 ,  H01L2224/0239 ,  H01L2224/0332 ,  H01L2224/0333 ,  H01L2224/0345 ,  H01L2224/03452 ,  H01L2224/03462 ,  H01L2224/03464 ,  H01L2224/0347 ,  H01L2224/03614 ,  H01L2224/0391 ,  H01L2224/03912 ,  H01L2224/03914 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05111 ,  H01L2224/05124 ,  H01L2224/05139 ,  H01L2224/05144 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05169 ,  H01L2224/05184 ,  H01L2224/05547 ,  H01L2224/05565 ,  H01L2224/05568 ,  H01L2224/05569 ,  H01L2224/05611 ,  H01L2224/05616 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05669 ,  H01L2224/05684 ,  H01L2224/1134 ,  H01L2224/11462 ,  H01L2224/11464 ,  H01L2224/1147 ,  H01L2224/11903 ,  H01L2224/1191 ,  H01L2224/13022 ,  H01L2224/13023 ,  H01L2224/13025 ,  H01L2224/13082 ,  H01L2224/131 ,  H01L2224/13111 ,  H01L2224/13113 ,  H01L2224/13116 ,  H01L2224/13124 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/13169 ,  H01L2224/13184 ,  H01L2224/13565 ,  H01L2224/13616 ,  H01L2224/1403 ,  H01L2224/14131 ,  H01L2224/14132 ,  H01L2224/14134 ,  H01L2224/16145 ,  H01L2224/16146 ,  H01L2224/16148 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/16265 ,  H01L2224/17181 ,  H01L2224/24147 ,  H01L2224/24227 ,  H01L2224/244 ,  H01L2224/32145 ,  H01L2224/3303 ,  H01L2224/33181 ,  H01L2224/45015 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48149 ,  H01L2224/4903 ,  H01L2224/73201 ,  H01L2224/73253 ,  H01L2224/73265 ,  H01L2224/81192 ,  H01L2224/81193 ,  H01L2224/81825 ,  H01L2224/94 ,  H01L2224/97 ,  H01L2225/0651 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06541 ,  H01L2225/06548 ,  H01L2225/06562 ,  H01L2225/06568 ,  H01L2924/00014 ,  H01L2924/01074 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/12042 ,  H01L2924/1205 ,  H01L2924/1206 ,  H01L2924/1207 ,  H01L2924/1461 ,  H01L2924/15192 ,  H01L2924/15311 ,  H01L2924/15787 ,  H01L2924/15788 ,  H01L2924/16251 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2924/19103 ,  H01L2924/20751 ,  H01L2924/20752 ,  H01L2924/20753 ,  H01L2924/20754 ,  H01L2924/20755 ,  H01L2924/20756 ,  H01L2924/20757 ,  H01L2924/20758 ,  H01L2924/20759 ,  H01L2924/2076 ,  H01L2924/3841 ,  H01L2924/01322 ,  H01L2924/00 ,  H01L2924/15787 ,  H01L2924/00 ,  H01L2924/15788 ,  H01L2924/00 ,  H01L2924/181 ,  H01L2924/00 ,  H01L2924/12042 ,  H01L2924/00 ,  H01L2224/0239 ,  H01L2924/01029 ,  H01L2224/131 ,  H01L2924/014 ,  H01L2224/05568 ,  H01L2924/00014 ,  H01L2224/13147 ,  H01L2924/00014 ,  H01L2224/81825 ,  H01L2924/00014 ,  H01L2224/1147 ,  H01L2924/00014 ,  H01L2224/0347 ,  H01L2924/00014 ,  H01L2224/05147 ,  H01L2924/00014 ,  H01L2224/05647 ,  H01L2924/00014 ,  H01L2224/05124 ,  H01L2924/00014 ,  H01L2224/05624 ,  H01L2924/00014 ,  H01L2224/05111 ,  H01L2924/00014 ,  H01L2224/05611 ,  H01L2924/00014 ,  H01L2224/05169 ,  H01L2924/00014 ,  H01L2224/05669 ,  H01L2924/00014 ,  H01L2224/05155 ,  H01L2924/00014 ,  H01L2224/05655 ,  H01L2924/00014 ,  H01L2224/05144 ,  H01L2924/00014 ,  H01L2224/05644 ,  H01L2924/00014 ,  H01L2224/05184 ,  H01L2924/00014 ,  H01L2224/05684 ,  H01L2924/00014 ,  H01L2224/05139 ,  H01L2924/00014 ,  H01L2224/05639 ,  H01L2924/00014 ,  H01L2224/0345 ,  H01L2924/00014 ,  H01L2224/03452 ,  H01L2924/00014 ,  H01L2224/0332 ,  H01L2924/00014 ,  H01L2224/03462 ,  H01L2924/00014 ,  H01L2224/03464 ,  H01L2924/00014 ,  H01L2224/11462 ,  H01L2924/00014 ,  H01L2224/11464 ,  H01L2924/00014 ,  H01L2224/0333 ,  H01L2924/00012 ,  H01L2224/13616 ,  H01L2924/00014 ,  H01L2224/05616 ,  H01L2924/00014 ,  H01L2224/13155 ,  H01L2924/01074 ,  H01L2224/13184 ,  H01L2924/01028 ,  H01L2224/13124 ,  H01L2924/00014 ,  H01L2224/13111 ,  H01L2924/01082 ,  H01L2224/13155 ,  H01L2924/00014 ,  H01L2224/13144 ,  H01L2924/00014 ,  H01L2224/13139 ,  H01L2924/00014 ,  H01L2224/13116 ,  H01L2924/00014 ,  H01L2224/13113 ,  H01L2924/00014 ,  H01L2224/13169 ,  H01L2924/00014 ,  H01L2224/73201 ,  H01L2224/05 ,  H01L2224/13 ,  H01L2224/94 ,  H01L2224/81 ,  H01L2224/48091 ,  H01L2924/00014 ,  H01L2224/45147 ,  H01L2924/00 ,  H01L2224/97 ,  H01L2224/81 ,  H01L2224/45147 ,  H01L2924/00014 ,  H01L2224/45015 ,  H01L2924/20751 ,  H01L2224/45015 ,  H01L2924/20752 ,  H01L2224/45015 ,  H01L2924/20753 ,  H01L2224/45015 ,  H01L2924/20754 ,  H01L2224/45015 ,  H01L2924/20755 ,  H01L2224/45015 ,  H01L2924/20756 ,  H01L2224/45015 ,  H01L2924/20757 ,  H01L2224/45015 ,  H01L2924/20758 ,  H01L2224/45015 ,  H01L2924/20759 ,  H01L2224/45015 ,  H01L2924/2076 ,  H01L2924/00014 ,  H01L2224/45015 ,  H01L2924/20751 ,  H01L2924/00014 ,  H01L2224/45015 ,  H01L2924/20752 ,  H01L2924/00014 ,  H01L2224/45015 ,  H01L2924/20753 ,  H01L2924/00014 ,  H01L2224/45015 ,  H01L2924/20754 ,  H01L2924/00014 ,  H01L2224/45015 ,  H01L2924/20755 ,  H01L2924/00014 ,  H01L2224/45015 ,  H01L2924/20756 ,  H01L2924/00014 ,  H01L2224/45015 ,  H01L2924/20757 ,  H01L2924/00014 ,  H01L2224/45015 ,  H01L2924/20758 ,  H01L2924/00014 ,  H01L2224/45015 ,  H01L2924/20759 ,  H01L2924/00014 ,  H01L2224/45015 ,  H01L2924/2076 ,  H01L2924/00014 ,  H01L2224/45099

Abstract: Apparatus(es) and method(s) relate generally to via arrays on a substrate. In one such apparatus, the substrate has a conductive layer. First plated conductors are in a first region extending from a surface of the conductive layer. Second plated conductors are in a second region extending from the surface of the conductive layer. The first plated conductors and the second plated conductors are external to the first substrate. The first region is disposed at least partially within the second region. The first plated conductors are of a first height. The second plated conductors are of a second height greater than the first height. A second substrate is coupled to first ends of the first plated conductors. The second substrate has at least one electronic component coupled thereto. A die is coupled to second ends of the second plated conductors. The die is located over the at least one electronic component.

公开(公告)号：US11735563B2

公开(公告)日：2023-08-22

申请号：US17512123

申请日：2021-10-27

Applicant: Invensas LLC

Inventor： Ellis Chau ,  Reynaldo Co ,  Roseann Alatorre ,  Philip Damberg ,  Wei-Shun Wang ,  Se Young Yang

IPC: H01L23/00 ,  H01L23/31 ,  H01L23/498 ,  H01L21/56 ,  H01L25/10 ,  H01L25/00 ,  H01L23/495 ,  H01L21/48 ,  H01L23/367 ,  H01L23/433 ,  H01L25/065 ,  H05K3/34

CPC classification number: H01L24/85 ,  H01L21/4853 ,  H01L21/56 ,  H01L23/3128 ,  H01L23/3677 ,  H01L23/4334 ,  H01L23/49517 ,  H01L23/49811 ,  H01L23/49816 ,  H01L24/06 ,  H01L24/43 ,  H01L24/78 ,  H01L25/105 ,  H01L25/50 ,  H01L21/565 ,  H01L23/3114 ,  H01L24/16 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L25/0655 ,  H01L25/0657 ,  H01L2224/0401 ,  H01L2224/05599 ,  H01L2224/131 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/45015 ,  H01L2224/4554 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/45565 ,  H01L2224/4824 ,  H01L2224/48091 ,  H01L2224/48145 ,  H01L2224/48227 ,  H01L2224/48245 ,  H01L2224/48247 ,  H01L2224/48997 ,  H01L2224/49171 ,  H01L2224/73204 ,  H01L2224/73207 ,  H01L2224/73253 ,  H01L2224/73257 ,  H01L2224/73265 ,  H01L2224/78301 ,  H01L2224/851 ,  H01L2224/8518 ,  H01L2224/85399 ,  H01L2224/85951 ,  H01L2224/85986 ,  H01L2225/0651 ,  H01L2225/06506 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06558 ,  H01L2225/06562 ,  H01L2225/06565 ,  H01L2225/06568 ,  H01L2225/1023 ,  H01L2225/1029 ,  H01L2225/1052 ,  H01L2225/1058 ,  H01L2225/1088 ,  H01L2225/1094 ,  H01L2924/00011 ,  H01L2924/00012 ,  H01L2924/00014 ,  H01L2924/01013 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/12042 ,  H01L2924/1431 ,  H01L2924/1434 ,  H01L2924/15311 ,  H01L2924/15331 ,  H01L2924/1715 ,  H01L2924/181 ,  H01L2924/1815 ,  H01L2924/19107 ,  H01L2924/3511 ,  H05K3/3436 ,  H05K2201/1053 ,  H05K2201/10515 ,  Y10T29/49149 ,  Y10T29/49151 ,  H01L2224/45565 ,  H01L2224/45147 ,  H01L2224/45664 ,  H01L2224/45565 ,  H01L2224/45144 ,  H01L2224/45664 ,  H01L2924/19107 ,  H01L2224/45144 ,  H01L2224/45565 ,  H01L2224/45664 ,  H01L2924/19107 ,  H01L2224/45147 ,  H01L2224/45565 ,  H01L2224/45664 ,  H01L2224/78301 ,  H01L2924/00014 ,  H01L2224/85986 ,  H01L2224/8518 ,  H01L2224/85951 ,  H01L2224/49171 ,  H01L2224/48227 ,  H01L2924/00 ,  H01L2224/49171 ,  H01L2224/48247 ,  H01L2924/00 ,  H01L2224/4824 ,  H01L2224/49171 ,  H01L2924/00 ,  H01L2224/73265 ,  H01L2224/32145 ,  H01L2224/48227 ,  H01L2924/00012 ,  H01L2224/73265 ,  H01L2224/32225 ,  H01L2224/48227 ,  H01L2924/00012 ,  H01L2224/73265 ,  H01L2224/32145 ,  H01L2224/48145 ,  H01L2924/00012 ,  H01L2224/73265 ,  H01L2224/32245 ,  H01L2224/48247 ,  H01L2924/00012 ,  H01L2224/45144 ,  H01L2924/00 ,  H01L2224/45124 ,  H01L2924/00 ,  H01L2224/45147 ,  H01L2924/00 ,  H01L2224/73265 ,  H01L2224/32145 ,  H01L2224/48247 ,  H01L2924/00 ,  H01L2224/73204 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2924/00 ,  H01L2224/73265 ,  H01L2224/32245 ,  H01L2224/48227 ,  H01L2924/00 ,  H01L2224/73265 ,  H01L2224/32225 ,  H01L2224/48247 ,  H01L2924/00 ,  H01L2224/73204 ,  H01L2224/16145 ,  H01L2224/32145 ,  H01L2924/00 ,  H01L2224/131 ,  H01L2924/014 ,  H01L2924/15311 ,  H01L2224/73265 ,  H01L2224/32225 ,  H01L2224/48227 ,  H01L2924/00 ,  H01L2924/15311 ,  H01L2224/73204 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2924/00 ,  H01L2924/01047 ,  H01L2924/00 ,  H01L2224/48091 ,  H01L2924/00014 ,  H01L2224/45015 ,  H01L2924/00 ,  H01L2224/45144 ,  H01L2924/00014 ,  H01L2224/45147 ,  H01L2924/00014 ,  H01L2924/181 ,  H01L2924/00 ,  H01L2924/12042 ,  H01L2924/00 ,  H01L2924/181 ,  H01L2924/00012 ,  H01L2224/45015 ,  H01L2924/20751 ,  H01L2224/45015 ,  H01L2924/20752 ,  H01L2224/45015 ,  H01L2924/20753 ,  H01L2224/45015 ,  H01L2924/20754 ,  H01L2224/45015 ,  H01L2924/20755 ,  H01L2224/45015 ,  H01L2924/20756 ,  H01L2224/45015 ,  H01L2924/20757 ,  H01L2224/45015 ,  H01L2924/20758 ,  H01L2224/45015 ,  H01L2924/20759 ,  H01L2224/45015 ,  H01L2924/2076 ,  H01L2224/85399 ,  H01L2924/00014 ,  H01L2224/05599 ,  H01L2924/00014 ,  H01L2924/00011 ,  H01L2924/01049

Abstract: A microelectronic package includes a substrate having a first surface. A microelectronic element overlies the first surface. Electrically conductive elements are exposed at the first surface of the substrate, at least some of which are electrically connected to the microelectronic element. The package includes wire bonds having bases bonded to respective ones of the conductive elements and ends remote from the substrate and remote from the bases. The ends of the wire bonds are defined on tips of the wire bonds, and the wire bonds define respective first diameters between the bases and the tips thereof. The tips have at least one dimension that is smaller than the respective first diameters of the wire bonds. A dielectric encapsulation layer covers portions of the wire bonds, and unencapsulated portions of the wire bonds are defined by portions of the wire bonds, including the ends, are uncovered by the encapsulation layer.

公开(公告)号：US20230245995A1

公开(公告)日：2023-08-03

申请号：US17924657

申请日：2022-03-16

Applicant: NIPPON MICROMETAL CORPORATION

Inventor： Daizo ODA ,  Motoki ETO ,  Takashi YAMADA ,  Teruo HAIBARA ,  Ryo OISHI

IPC: H01L23/00

CPC classification number: H01L24/45 ,  H01L24/43 ,  H01L24/48 ,  H01L2224/432 ,  H01L2224/43125 ,  H01L2224/43848 ,  H01L2224/45105 ,  H01L2224/45109 ,  H01L2224/45117 ,  H01L2224/45123 ,  H01L2224/45138 ,  H01L2224/45139 ,  H01L2224/45147 ,  H01L2224/45163 ,  H01L2224/45605 ,  H01L2224/45609 ,  H01L2224/45623 ,  H01L2224/45639 ,  H01L2224/45644 ,  H01L2224/45655 ,  H01L2224/45663 ,  H01L2224/45664 ,  H01L2224/48151 ,  H01L2924/01005 ,  H01L2924/01032 ,  H01L2924/20753 ,  H01L2924/20754 ,  H01L2924/20755 ,  H01L2924/20756 ,  H01L2924/20757 ,  H01L2924/20758

Abstract: There is provided a novel Cu bonding wire that achieves a favorable FAB shape and achieve a favorable bond reliability of the 2nd bonding part even in a rigorous high-temperature environment. The bonding wire for semiconductor devices includes a core material of Cu or Cu alloy, and a coating layer having a total concentration of Pd and Ni of 90 atomic% or more formed on a surface of the core material. The bonding wire is characterized in that:

in a concentration profile in a depth direction of the wire obtained by performing measurement using Auger electron spectroscopy (AES) so that the number of measurement points in the depth direction is 50 or more for the coating layer,
a thickness of the coating layer is 10 nm or more and 130 nm or less,
an average value X is 0.2 or more and 35.0 or less where X is defined as an average value of a ratio of a Pd concentration CPd (atomic%) to an Ni concentration CNi (atomic%), CPd/CNi, for all measurement points in the coating layer,
the total number of measurement points in the coating layer whose absolute deviation from the average value X is 0.3X or less is 50% or more relative to the total number of measurement points in the coating layer, and
the bonding wire satisfies at least one of following conditions (i) and (ii):

(i) a concentration of In relative to the entire wire is 1 ppm by mass or more and 100 ppm by mass or less; and
(ii) a concentration of Ag relative to the entire wire is 1 ppm by mass or more and 500 ppm by mass or less.

公开(公告)号：US09842807B2

公开(公告)日：2017-12-12

申请号：US14887047

申请日：2015-10-19

Applicant: Texas Instruments Incorporated

Inventor： Lee Han Meng@ Eugene Lee ,  Anis Fauzi bin Abdul Aziz ,  Wei Fen Sueann Lim

IPC: H01L23/538 ,  H01L23/495 ,  H01L21/768 ,  H01L21/56 ,  H01L21/48 ,  H01L21/78

CPC classification number: H01L23/5386 ,  H01L21/4853 ,  H01L21/561 ,  H01L21/563 ,  H01L21/565 ,  H01L21/76898 ,  H01L21/78 ,  H01L23/3121 ,  H01L23/481 ,  H01L23/49503 ,  H01L23/4952 ,  H01L23/5384 ,  H01L24/05 ,  H01L24/08 ,  H01L24/29 ,  H01L24/32 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L24/80 ,  H01L24/83 ,  H01L24/85 ,  H01L24/92 ,  H01L24/97 ,  H01L2224/04 ,  H01L2224/04026 ,  H01L2224/05009 ,  H01L2224/0579 ,  H01L2224/05839 ,  H01L2224/08245 ,  H01L2224/29009 ,  H01L2224/2919 ,  H01L2224/2929 ,  H01L2224/293 ,  H01L2224/29339 ,  H01L2224/32013 ,  H01L2224/32245 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/48464 ,  H01L2224/48465 ,  H01L2224/49171 ,  H01L2224/73251 ,  H01L2224/73265 ,  H01L2224/9222 ,  H01L2224/92247 ,  H01L2224/97 ,  H01L2924/35121 ,  H01L2924/3862 ,  H01L2924/00014 ,  H01L2224/291 ,  H01L2924/014 ,  H01L2924/00012 ,  H01L2224/83 ,  H01L2224/85 ,  H01L2924/20751 ,  H01L2924/20752 ,  H01L2924/20753 ,  H01L2924/20754 ,  H01L2924/20755 ,  H01L2924/20756 ,  H01L2924/20757 ,  H01L2924/20758 ,  H01L2924/20759 ,  H01L2924/2076 ,  H01L2924/00 ,  H01L2924/0781 ,  H01L2924/0665 ,  H01L2224/08 ,  H01L2224/80 ,  H01L2224/48

Abstract: An integrated circuit (IC) die including a top surface and a bottom surface, a plurality of spaced apart ground connection traces positioned between the top surface and the bottom surface; with a hole in the die exposing the plurality of spaced apart ground connection traces.

公开(公告)号：US09831212B2

公开(公告)日：2017-11-28

申请号：US14503148

申请日：2014-09-30

Applicant: ROHM CO., LTD.

Inventor： Mamoru Yamagami ,  Kenji Fujii

IPC: H01L23/492 ,  H01L23/00 ,  H01L23/495 ,  H01L23/31 ,  H01L23/525 ,  H01L23/532

CPC classification number: H01L24/49 ,  H01L23/3107 ,  H01L23/49524 ,  H01L23/49548 ,  H01L23/525 ,  H01L23/53223 ,  H01L23/53238 ,  H01L24/05 ,  H01L24/06 ,  H01L24/13 ,  H01L24/14 ,  H01L24/16 ,  H01L24/36 ,  H01L24/37 ,  H01L24/40 ,  H01L24/41 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L2224/02375 ,  H01L2224/0346 ,  H01L2224/0347 ,  H01L2224/0391 ,  H01L2224/03914 ,  H01L2224/0401 ,  H01L2224/04034 ,  H01L2224/04042 ,  H01L2224/05008 ,  H01L2224/05009 ,  H01L2224/05022 ,  H01L2224/05026 ,  H01L2224/05147 ,  H01L2224/05164 ,  H01L2224/05166 ,  H01L2224/05548 ,  H01L2224/05554 ,  H01L2224/05557 ,  H01L2224/05567 ,  H01L2224/05571 ,  H01L2224/05583 ,  H01L2224/05599 ,  H01L2224/05624 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/08245 ,  H01L2224/13024 ,  H01L2224/13076 ,  H01L2224/131 ,  H01L2224/13147 ,  H01L2224/13582 ,  H01L2224/13655 ,  H01L2224/13664 ,  H01L2224/1411 ,  H01L2224/16245 ,  H01L2224/37147 ,  H01L2224/40245 ,  H01L2224/40247 ,  H01L2224/40479 ,  H01L2224/40491 ,  H01L2224/40499 ,  H01L2224/40993 ,  H01L2224/4112 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48177 ,  H01L2224/48247 ,  H01L2224/48824 ,  H01L2224/48847 ,  H01L2224/48855 ,  H01L2224/4912 ,  H01L2224/49177 ,  H01L2224/73221 ,  H01L2224/8485 ,  H01L2924/00012 ,  H01L2924/00014 ,  H01L2924/181 ,  H01L2924/20754 ,  H01L2924/351 ,  H01L2924/00 ,  H01L2924/2075 ,  H01L2924/20757 ,  H01L2924/20756 ,  H01L2924/20758 ,  H01L2924/20759 ,  H01L2924/2076 ,  H01L2924/20755 ,  H01L2924/014 ,  H01L2224/051

Abstract: An inventive semiconductor device includes: a semiconductor chip including an integrated circuit; a plurality of electrode pads provided on the semiconductor chip and connected to the integrated circuit; a rewiring to which the electrode pads are electrically connected together, the rewiring being exposed on an outermost surface of the semiconductor chip and having an exposed surface area greater than the total area of the electrode pads; and a resin package which seals the semiconductor chip.

公开(公告)号：US20170338193A1

公开(公告)日：2017-11-23

申请号：US15520872

申请日：2015-10-14

Applicant: DANFOSS SILICON POWER GMBH

Inventor： Josef Lutz ,  Ronald Eisele ,  Jacek Rudzki ,  Martin Becker ,  Mathias Kock ,  Frank Osterwald

IPC: H01L23/62 ,  H01L23/00

CPC classification number: H01L23/62 ,  H01L24/04 ,  H01L24/07 ,  H01L24/45 ,  H01L24/48 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/45147 ,  H01L2224/4847 ,  H01L2224/48491 ,  H01L2224/85423 ,  H01L2224/85439 ,  H01L2224/85444 ,  H01L2224/85447 ,  H01L2924/00014 ,  H01L2924/13055 ,  H01L2924/00015 ,  H01L2924/20753 ,  H01L2924/20754 ,  H01L2924/20755 ,  H01L2924/20756 ,  H01L2924/20757 ,  H01L2924/20758 ,  H01L2924/20759 ,  H01L2924/2076 ,  H01L2224/05599

Abstract: A description is given of a power semiconductor module 10 which can be transferred from a normal operating mode to an explosion-free robust short-circuit failure mode. Said power semiconductor module 10 comprises a power semiconductor 1 having metallizations 3 which form potential areas and are separated by insulations and passivations on the top side 2 of said power semiconductor. Furthermore, an electrically conductive connecting layer is provided, on which at least one metal shaped body 4 which has a low lateral electrical resistance and is significantly thicker than the connecting layer is arranged, said at least one metal shaped body being applied by sintering of the connecting layer such that said metal shaped body is cohesively connected to the respective potential area. The metal shaped body 4 is embodied and designed with means for laterally homogenizing a current flowing through it in such a way that a lateral current flow component 5 is maintained until this module switches off in order to avoid an explosion, wherein the metal shaped body 4 has connections 6 having high-current capability. A transition from the operating mode to the robust failure mode then takes place in an explosion-free manner by virtue of the fact that the connections 6 are contact-connected and dimensioned in such a way that in the case of overload currents of greater than a multiple of the rated current of the power semiconductor 1, the operating mode changes to the short-circuit failure mode with connections 6 remaining on the metal shaped body 4 in an explosion-free manner without the formation of arcs.

公开(公告)号：US20170338176A1

公开(公告)日：2017-11-23

申请号：US15534686

申请日：2015-11-06

Applicant: HITACHI, LTD.

Inventor： Nobutake TSUYUNO ,  Eiichi IDE

IPC: H01L23/498 ,  H01L23/00 ,  H01L29/739

CPC classification number: H01L23/49838 ,  H01L23/48 ,  H01L23/49833 ,  H01L24/48 ,  H01L24/73 ,  H01L25/07 ,  H01L25/072 ,  H01L25/18 ,  H01L29/7395 ,  H01L2224/05552 ,  H01L2224/05554 ,  H01L2224/0603 ,  H01L2224/45015 ,  H01L2224/451 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2924/181 ,  H01L2924/00012 ,  H01L2924/00014 ,  H01L2924/20751 ,  H01L2924/20752 ,  H01L2924/20753 ,  H01L2924/20754 ,  H01L2924/20755 ,  H01L2924/20756 ,  H01L2924/20757 ,  H01L2924/20758 ,  H01L2924/20759 ,  H01L2924/2076

Abstract: An object of the invention is to manufacture a semiconductor module small. A metal wire (212) connecting a control electrode (101) and a control terminal (21) rises to form a first angle (θ1) from the control electrode (101) toward a first conductive portion (202), gradually goes in substantially parallel to the first conductive portion (202) as the metal wire approaches the first conductive portion (202), and is connected to the control terminal (21) to form a second angle (θ2) smaller than the first angle (θ1).

公开(公告)号：US09754912B2

公开(公告)日：2017-09-05

申请号：US15181740

申请日：2016-06-14

Applicant: Infineon Technologies AG

Inventor： Khalil Hosseini ,  Matthias Stecher

IPC: H01L21/44 ,  H01L23/00 ,  H01L23/532 ,  H01L21/56

CPC classification number: H01L24/48 ,  H01L24/03 ,  H01L24/05 ,  H01L24/45 ,  H01L24/81 ,  H01L24/85 ,  H01L2224/0347 ,  H01L2224/04042 ,  H01L2224/05082 ,  H01L2224/05083 ,  H01L2224/05147 ,  H01L2224/05166 ,  H01L2224/05181 ,  H01L2224/05184 ,  H01L2224/05556 ,  H01L2224/05624 ,  H01L2224/05647 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/48463 ,  H01L2224/48624 ,  H01L2224/48647 ,  H01L2224/48724 ,  H01L2224/48747 ,  H01L2224/48824 ,  H01L2224/48847 ,  H01L2224/73257 ,  H01L2224/81801 ,  H01L2224/85201 ,  H01L2224/85205 ,  H01L2224/85375 ,  H01L2924/00011 ,  H01L2924/01005 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01046 ,  H01L2924/0105 ,  H01L2924/01068 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2924/10253 ,  H01L2924/1305 ,  H01L2924/1306 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2924/20104 ,  H01L2924/20105 ,  H01L2924/20751 ,  H01L2924/20752 ,  H01L2924/20753 ,  H01L2924/20754 ,  H01L2924/20755 ,  H01L2924/20756 ,  H01L2924/20757 ,  H01L2924/20758 ,  H01L2924/20759 ,  H01L2924/2076 ,  H01L2924/00014 ,  H01L2224/05164 ,  H01L2924/00 ,  H01L2924/013 ,  H01L2924/2075 ,  H01L2924/00012 ,  H01L2924/01006

Abstract: An electronic device and method for production is disclosed. One embodiment provides an integrated component having a first layer which is composed of copper or a copper alloy or which contains copper or a copper alloy, and having an electrically conductive second layer, whose material differs from the material of the first layer, and a connection apparatus which is arranged on the first layer and on the second layer.

公开(公告)号：US09559070B2

公开(公告)日：2017-01-31

申请号：US15090160

申请日：2016-04-04

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Hsien-Wei Chen ,  Yi-Wen Wu

IPC: H01L21/00 ,  H01L23/00 ,  H01L23/31 ,  H01L21/02 ,  H01L21/768

CPC classification number: H01L24/11 ,  H01L21/0214 ,  H01L21/0217 ,  H01L21/02271 ,  H01L21/768 ,  H01L23/3114 ,  H01L23/3171 ,  H01L23/3192 ,  H01L23/564 ,  H01L24/03 ,  H01L24/05 ,  H01L24/13 ,  H01L2224/0231 ,  H01L2224/02311 ,  H01L2224/0239 ,  H01L2224/024 ,  H01L2224/0345 ,  H01L2224/03452 ,  H01L2224/0346 ,  H01L2224/0401 ,  H01L2224/05008 ,  H01L2224/05022 ,  H01L2224/05082 ,  H01L2224/05111 ,  H01L2224/05124 ,  H01L2224/05144 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05166 ,  H01L2224/05181 ,  H01L2224/05572 ,  H01L2224/05611 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05666 ,  H01L2224/05681 ,  H01L2224/05686 ,  H01L2224/1146 ,  H01L2224/11849 ,  H01L2224/13005 ,  H01L2224/13022 ,  H01L2224/13023 ,  H01L2224/13024 ,  H01L2224/131 ,  H01L2224/13111 ,  H01L2224/13113 ,  H01L2224/13116 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/16227 ,  H01L2224/16237 ,  H01L2224/81011 ,  H01L2224/81191 ,  H01L2224/81411 ,  H01L2224/81413 ,  H01L2224/81416 ,  H01L2224/81439 ,  H01L2224/81447 ,  H01L2224/81455 ,  H01L2224/81815 ,  H01L2224/8191 ,  H01L2924/00014 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2924/12042 ,  H01L2924/20755 ,  H01L2924/20756 ,  H01L2924/20757 ,  H01L2924/20758 ,  H01L2924/20759 ,  H01L2924/2076 ,  H01L2224/05552 ,  H01L2924/00

Abstract: A semiconductor device including a dielectric layer formed on the surface of a post-passivation interconnect (PPI) structures. A polymer layer is formed on the dielectric layer and patterned with an opening to expose a portion of the dielectric layer. The exposed portion of the dielectric layer is then removed to expose a portion of the PPI structure. A solder bump is then formed over and electrically connected to the first portion of the PPI structure.

Abstract translation: 一种半导体器件，包括形成在钝化后互连（PPI）结构的表面上的电介质层。 在电介质层上形成聚合物层并用开口图案化以暴露电介质层的一部分。 然后去除介电层的暴露部分以暴露PPI结构的一部分。 然后在PPI结构的第一部分上方形成焊料凸块并与其电连接。

公开(公告)号：US20160211247A1

公开(公告)日：2016-07-21

申请号：US15003958

申请日：2016-01-22

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Shigeaki MASHIMO ,  Fumio HORIUCHI ,  Kiyoaki KUDO ,  Akira SAKURAI ,  Yuhki INAGAKI

IPC: H01L25/00 ,  H01L23/00 ,  H01L25/18 ,  H01L21/56 ,  H01L23/29 ,  H01L21/48 ,  H01L23/495 ,  H01L23/31

CPC classification number: H02M7/537 ,  H01L21/4825 ,  H01L21/56 ,  H01L21/565 ,  H01L23/293 ,  H01L23/3121 ,  H01L23/4334 ,  H01L23/49531 ,  H01L23/49541 ,  H01L23/49575 ,  H01L24/45 ,  H01L24/48 ,  H01L24/85 ,  H01L25/072 ,  H01L25/18 ,  H01L25/50 ,  H01L2224/32245 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/48091 ,  H01L2224/48106 ,  H01L2224/48137 ,  H01L2224/48139 ,  H01L2224/48247 ,  H01L2224/48472 ,  H01L2224/73265 ,  H01L2924/1203 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/19105 ,  H01L2924/19107 ,  H01L2924/20753 ,  H05K1/0203 ,  H05K1/181 ,  Y10T29/4916 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/20752 ,  H01L2924/20754 ,  H01L2924/20755 ,  H01L2924/20756 ,  H01L2924/20757 ,  H01L2924/20758 ,  H01L2924/20759 ,  H01L2924/2076 ,  H01L2924/00012

Abstract: In one form, a method of manufacturing a circuit device comprises providing a lead frame comprising a plurality of leads, each comprising an island portion, a bonding portion elevated from the island portion, a slope portion extending obliquely so as to connect the island portion and the bonding portion, and a lead portion extending from the bonding portion. The circuit elements are mounted on upper surfaces of the island portions, and are connected to corresponding bonding portions by wirings. Two leads are adapted to be connected to positive and negative sides of a power source, and another lead is an output lead for providing alternating-current power. Lower surfaces of the island portions are attached to an upper surface of a circuit board. The circuit board, the circuit elements, and the lead frame are encapsulated by a resin, so that the lead portions are not covered by the resin.

Abstract translation: 在一种形式中，制造电路装置的方法包括：提供引线框架，该引线框架包括多个引线，每个引线包括岛部分，从该岛部分升高的接合部分，倾斜部分倾斜地延伸以连接岛部分和 接合部分和从接合部分延伸的引线部分。 电路元件安装在岛部的上表面上，并通过布线连接到相应的接合部分。 两个引线适于连接到电源的正极和负极侧，另一个引线是用于提供交流电力的输出引线。 岛部的下表面附接到电路板的上表面。 电路板，电路元件和引线框架被树脂封装，使得引线部分不被树脂覆盖。