公开(公告)号：US20190004385A1

公开(公告)日：2019-01-03

申请号：US16126213

申请日：2018-09-10

申请人： International Business Machines Corporation

发明人： Shu-Jen Han

IPC分类号： G02F1/157 ,  G06N3/067 ,  G02F1/15 ,  H01L31/102 ,  H01L31/09 ,  H01L31/18 ,  G02F1/163 ,  G02F1/155 ,  G02F1/153 ,  H01L31/0232

CPC分类号： G02F1/157 ,  G02F1/1508 ,  G02F1/1525 ,  G02F1/1533 ,  G02F1/155 ,  G02F1/163 ,  G06N3/0675 ,  H01L27/142 ,  H01L31/02162 ,  H01L31/02327 ,  H01L31/09 ,  H01L31/102 ,  H01L31/18 ,  H01L31/1804 ,  H01L31/1808 ,  H01L31/1828 ,  H01L31/184 ,  H01L31/1844

摘要： A synaptic electronic device includes a substrate including a one or more of a semiconductor and an insulator; a photosensitive layer disposed on a surface of the substrate; an electrochromic stack disposed on the photosensitive layer, the electrochromic stack including a first transparent electrode layer, a cathodic electrochromic layer, a solid electrolyte layer, an anodic electrochromic layer, and a second transparent electrode layer; and a pair of electrodes disposed on the photosensitive layer and on opposing sides of the electrochromic stack.

公开(公告)号：US20180182789A1

公开(公告)日：2018-06-28

申请号：US15580817

申请日：2016-09-05

申请人： SONY SEMICONDUCTOR SOLUTIONS CORPORATION

发明人： SUSUMU INOUE ,  YUHI YORIKADO ,  ATSUSHI TODA

IPC分类号： H01L27/146 ,  H01L31/107 ,  H04N5/374

CPC分类号： H01L27/1462 ,  H01L21/02107 ,  H01L21/02178 ,  H01L21/02181 ,  H01L21/02183 ,  H01L21/02189 ,  H01L21/02192 ,  H01L27/14607 ,  H01L27/1461 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/14636 ,  H01L27/14638 ,  H01L27/1464 ,  H01L27/14647 ,  H01L27/14685 ,  H01L27/14689 ,  H01L31/02005 ,  H01L31/02027 ,  H01L31/02162 ,  H01L31/022408 ,  H01L31/028 ,  H01L31/0304 ,  H01L31/0352 ,  H01L31/035263 ,  H01L31/03529 ,  H01L31/1013 ,  H01L31/107 ,  H01L31/1804 ,  H01L31/1808 ,  H01L31/184 ,  H04N9/0451

摘要： The present technology relates to a solid-state image sensing device for preventing a reduction in light receiving sensitivity of an avalanche photodiode, an electronic device, and a method for manufacturing the solid-state image sensing device. A solid-state image sensing device includes an avalanche photodiode having a first region of a first conductive type, a second region of a second conductive type different from the first conductive type, and an avalanche region sandwiched between the first region and the second region, which extend in a thickness direction of a semiconductor substrate, and a film formed on at least one side of the semiconductor substrate and including a metal oxide film, a metal nitride film, or a mix crystal-based film of metal oxide film and metal nitride film. The present technology can be applied to CMOS image sensors, for example.

公开(公告)号：US10008543B2

公开(公告)日：2018-06-26

申请号：US15723190

申请日：2017-10-03

申请人： INVISAGE TECHNOLOGIES, INC.

发明人： Edward Hartley Sargent ,  Jason Paul Clifford ,  Gerasimos Konstantatos ,  Ian Howard ,  Ethan J. D. Klem ,  Larissa Levina

IPC分类号： G11C11/00 ,  H01L27/30 ,  H01L51/42 ,  H01L31/0256

CPC分类号： H01L27/305 ,  B82Y10/00 ,  B82Y20/00 ,  B82Y30/00 ,  B82Y40/00 ,  H01L21/02521 ,  H01L21/02601 ,  H01L21/02628 ,  H01L27/1462 ,  H01L27/14634 ,  H01L27/14665 ,  H01L27/14692 ,  H01L27/308 ,  H01L31/02162 ,  H01L31/022466 ,  H01L31/0352 ,  H01L31/035218 ,  H01L31/03926 ,  H01L51/0038 ,  H01L51/0545 ,  H01L51/0566 ,  H01L51/4253 ,  H01L51/426 ,  H01L2031/0344 ,  Y02E10/549 ,  Y10S977/773 ,  Y10S977/774 ,  Y10S977/893 ,  Y10S977/954 ,  Y10S977/962

摘要： Various embodiment include optical and optoelectronic devices and methods of making same. Under one aspect, an optical device includes an integrated circuit having an array of conductive regions, and an optically sensitive material over at least a portion of the integrated circuit and in electrical communication with at least one conductive region of the array of conductive regions. Under another aspect, a film includes a network of fused nanocrystals, the nanocrystals having a core and an outer surface, wherein the core of at least a portion of the fused nanocrystals is in direct physical contact and electrical communication with the core of at least one adjacent fused nanocrystal, and wherein the film has substantially no defect states in the regions where the cores of the nanocrystals are fused. Additional devices and methods are described.

公开(公告)号：US20180122849A1

公开(公告)日：2018-05-03

申请号：US15858204

申请日：2017-12-29

申请人： Sony Corporation

发明人： Takashi Abe ,  Nobuo Nakamura ,  Keiji Mabuchi ,  Tomoyuki Umeda ,  Hiroaki Fujita ,  Eiichi Funatsu ,  Hiroki Sato

IPC分类号： H01L27/146 ,  H01L31/0232 ,  H01L31/0216 ,  H01L23/544

CPC分类号： H01L27/14643 ,  H01L23/544 ,  H01L27/14603 ,  H01L27/14607 ,  H01L27/14609 ,  H01L27/14612 ,  H01L27/1462 ,  H01L27/14623 ,  H01L27/14625 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/14632 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14683 ,  H01L27/14685 ,  H01L27/14687 ,  H01L31/02162 ,  H01L31/0232 ,  H01L31/02327 ,  H01L2223/54426 ,  H01L2223/54453 ,  H01L2924/0002 ,  H01L2924/00

摘要： Forming a back-illuminated type CMOS image sensor, includes process for formation of a registration mark on the wiring side of a silicon substrate during formation of an active region or a gate electrode. A silicide film using an active region may also be used for the registration mark. Thereafter, the registration mark is read from the back-side by use of red light or near infrared rays, and registration of the stepper is accomplished. It is also possible to form a registration mark in a silicon oxide film on the back-side (illuminated side) in registry with the registration mark on the wiring side, and to achieve the desired registration by use of the registration mark thus formed.

公开(公告)号：US09952096B2

公开(公告)日：2018-04-24

申请号：US14404834

申请日：2013-06-03

申请人： PRESIDENT AND FELLOWS OF HARVARD COLLEGE

发明人： Mikhail A. Kats ,  Romain Blanchard ,  Patrice Genevet ,  Federico Capasso

IPC分类号： G01J3/02 ,  G01J3/12 ,  G01J3/26 ,  G01J3/28 ,  G02B5/20 ,  G02B5/22 ,  G02B5/28 ,  H01L31/0216 ,  H01L31/0232

CPC分类号： G01J3/0205 ,  G01J3/0208 ,  G01J3/021 ,  G01J3/0218 ,  G01J3/26 ,  G01J3/2803 ,  G01J2003/1213 ,  G02B5/207 ,  G02B5/22 ,  G02B5/223 ,  G02B5/286 ,  H01L31/02162 ,  H01L31/02168 ,  H01L31/02325 ,  Y02E10/50

摘要： A spectral encoder includes a thin layer of lossy dielectric material whose thickness varies transversely from 0 to a thickness of about λ/4n (e.g.,

公开(公告)号：US20180070829A1

公开(公告)日：2018-03-15

申请号：US15695233

申请日：2017-09-05

申请人： SEIKO EPSON CORPORATION

发明人： Takanori IWAWAKI ,  Akira UEMATSU ,  Atsushi MATSUO

IPC分类号： A61B5/00 ,  A61B5/024 ,  A61B5/0432 ,  H01L31/0216

CPC分类号： A61B5/0059 ,  A61B5/02427 ,  A61B5/04325 ,  A61B5/14552 ,  A61B5/6801 ,  A61B5/681 ,  A61B2562/164 ,  H01L31/02162 ,  H01L31/167

摘要： An optical sensor module includes a light emitter that radiates light to a target object, a light receiver that receives light from the target object, a deformable substrate on which the light emitter and the light receiver are provided, and a reinforcing plate that reinforces the strength of the substrate.

公开(公告)号：US20180053861A1

公开(公告)日：2018-02-22

申请号：US15802271

申请日：2017-11-02

申请人： STMicroelectronics Pte Ltd. ,  STMicroelectronics R&D Limited

发明人： Yonggang JIN ,  David LAWSON ,  Colin CAMPBELL ,  Anandan RAMASAMY

IPC分类号： H01L31/0216 ,  H01L31/0232 ,  H01L31/0203 ,  H01L31/101 ,  H01L31/02

CPC分类号： H01L31/02165 ,  H01L31/02005 ,  H01L31/0203 ,  H01L31/02162 ,  H01L31/02164 ,  H01L31/02327 ,  H01L31/1013 ,  H01L2224/48091 ,  H01L2224/73265 ,  H01L2924/00014

摘要： Embodiments of the present disclosure are directed to optical packages having a package body that includes a light protection coating on at least one surface of a transparent material. The light protection coating includes one or more openings to allow light to be transmitted to the optical device within the package body. In one embodiment, the light protection coating and the openings allow substantially perpendicular radiation to be directed to the optical device within the package body. In one exemplary embodiment the light protection coating is located on an outer surface of the transparent material. In another embodiment, the light protection coating is located on an inner surface of the transparent material inside of the package body.

公开(公告)号：US09859324B2

公开(公告)日：2018-01-02

申请号：US15225303

申请日：2016-08-01

申请人： Sony Corporation

发明人： Takashi Abe ,  Nobuo Nakamura ,  Keiji Mabuchi ,  Tomoyuki Umeda ,  Hiroaki Fujita ,  Eiichi Funatsu ,  Hiroki Sato

IPC分类号： H01L27/146 ,  H01L23/544 ,  H01L31/0216 ,  H01L31/0232

CPC分类号： H01L27/14643 ,  H01L23/544 ,  H01L27/14603 ,  H01L27/14607 ,  H01L27/14609 ,  H01L27/14612 ,  H01L27/1462 ,  H01L27/14623 ,  H01L27/14625 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/14632 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14683 ,  H01L27/14685 ,  H01L27/14687 ,  H01L31/02162 ,  H01L31/0232 ,  H01L31/02327 ,  H01L2223/54426 ,  H01L2223/54453 ,  H01L2924/0002 ,  H01L2924/00

摘要： Forming a back-illuminated type CMOS image sensor, includes process for formation of a registration mark on the wiring side of a silicon substrate during formation of an active region or a gate electrode. A silicide film using an acitve region may also be used for the registration mark. Thereafter, the registration mark is read from the back-side by use of red light or near infrared rays, and registration of the stepper is accomplished. It is also possible to form a registration mark in a silicon oxide film on the back-side (illuminated side) in registry with the registration mark on the wiring side, and to achieve the desired registration by use of the registration mark thus formed.

公开(公告)号：US20170338256A1

公开(公告)日：2017-11-23

申请号：US15599040

申请日：2017-05-18

申请人： LAPIS Semiconductor Co., Ltd.

发明人： Masao OKIHARA

IPC分类号： H01L27/144 ,  H01L31/0216 ,  H01L31/103

CPC分类号： H01L27/1443 ,  H01L27/1446 ,  H01L27/14621 ,  H01L27/14685 ,  H01L31/02162 ,  H01L31/02165 ,  H01L31/103

摘要： A semiconductor device includes first and second photo-electric conversion elements, each having a light-receiving surface, disposed adjacent to each other, each outputting a light current that is a current corresponding to an intensity of received light, a first filter disposed on the light-receiving surface of the first photo-electric conversion element, a second filter disposed on the light-receiving surface of the second photo-electric conversion element, and a third filter disposed on the light-receiving surface of the second photo-electric conversion element and being in contact with the second filter, one end of the second filter and one end of the third filter overlapping one end of the first filter at a vicinity of a boundary between the first photo-electric conversion element and the second photo-electric conversion element.

公开(公告)号：US20170250169A1

公开(公告)日：2017-08-31

申请号：US15442536

申请日：2017-02-24

申请人： ams AG

发明人： David MEHRL ,  Greg STOLTZ

IPC分类号： H01L25/16 ,  G01S17/02 ,  H01L31/167 ,  G01S7/481 ,  H01L31/0216 ,  H01L31/0232

CPC分类号： H01L25/167 ,  G01S7/4811 ,  G01S7/4813 ,  G01S17/02 ,  G01S17/026 ,  H01L25/165 ,  H01L31/02162 ,  H01L31/02327 ,  H01L31/167

摘要： An optical proximity sensor arrangement comprises a semiconductor substrate (100) with a main surface (101). A first integrated circuit (200) comprises at least one light sensitive component (201). The first integrated circuit is arranged on the substrate at or near the main surface. A second integrated circuit (300) comprises at least one light emitting component (301), and is arranged on the substrate at or near the main surface. A light barrier (400) is arranged between the first and second integrated circuits. The light barrier being designed to block light to be emitted by the at least one light emitting component from directly reaching the at least one light sensitive component. A multilayer mask (500) is arranged on or near the first integrated circuit and comprising a stack (501) of a first layer (502) of first elongated light blocking slats (503) and at least one second layer (504) of second elongated light blocking slats (505). The light blocking slats are arranged in the mask to block light, incident on the mask from a first region of incidence (701), and to pass light, incident on the mask from a second region of incidence (702), from reaching the at least one light sensitive component.