公开(公告)号：US20190221603A1

公开(公告)日：2019-07-18

申请号：US16242132

申请日：2019-01-08

申请人： FUJITSU LIMITED

发明人： Hiroyasu YAMASHITA

IPC分类号： H01L27/146 ,  H01L31/0352 ,  H01L31/111

CPC分类号： H01L27/14669 ,  H01L27/14634 ,  H01L31/035236 ,  H01L31/111

摘要： A photodetector includes a quantum dot group including a first quantum dot of a reference size and a second quantum dot of a size other than the reference size, a first resonant tunneling structure disposed on a first side of the quantum dot group and including a barrier layer, a well layer, and a barrier layer, and a second resonant tunneling structure disposed on a second side of the quantum dot group and including a barrier layer, a well layer, and a barrier layer, wherein a first resonance level of the first resonant tunneling structure and a ground level of the first quantum dot have a relationship that causes tunneling, and a second resonance level of the second resonant tunneling structure and an excited level of the first quantum dot have a relationship that causes tunneling.

公开(公告)号：US09520511B2

公开(公告)日：2016-12-13

申请号：US14604703

申请日：2015-01-24

申请人： Applied Physical Electronics, L.C.

发明人： William C. Nunnally

IPC分类号： H01L31/0288 ,  H01L31/11 ,  H01L31/111 ,  H01L31/113 ,  H01L31/105 ,  H01L31/167

CPC分类号： H01L31/0288 ,  H01L31/105 ,  H01L31/1105 ,  H01L31/111 ,  H01L31/1113 ,  H01L31/1136 ,  H01L31/167

摘要： An optical method of collapsing the electric field of an innovatively fabricated, reverse-biased PN junction causes a semiconductor switch to transition from a current blocking mode to a current conduction mode in a planar electron avalanche. This switch structure and the method of optically initiating the switch closure is applicable to conventional semiconductor switch configurations that employ a reverse-biased PN junction, including, but not limited to, thyristors, bipolar transistors, and insulated gate bipolar transistors.

摘要翻译： 将创新制造的反向偏置PN结的电场塌缩的光学方法导致半导体开关在平面电子雪崩中从电流阻挡模式转变为电流导通模式。 该开关结构和光学启动开关闭合的方法适用于采用反向偏置PN结的常规半导体开关配置，其包括但不限于晶闸管，双极晶体管和绝缘栅双极晶体管。

公开(公告)号：US08835979B1

公开(公告)日：2014-09-16

申请号：US13152896

申请日：2011-06-03

申请人： Terence J De Lyon ,  Rajesh D Rajavel ,  Hasan Sharifi

发明人： Terence J De Lyon ,  Rajesh D Rajavel ,  Hasan Sharifi

IPC分类号： H01L31/102

CPC分类号： H01L31/035272 ,  H01L27/14649 ,  H01L27/14652 ,  H01L31/0224 ,  H01L31/0296 ,  H01L31/0304 ,  H01L31/03046 ,  H01L31/0328 ,  H01L31/035236 ,  H01L31/101 ,  H01L31/1035 ,  H01L31/109 ,  H01L31/11 ,  H01L31/1105 ,  H01L31/111 ,  H01L31/1113 ,  H01L31/1116 ,  H01L31/1844 ,  Y02E10/544

摘要： Using a multiple layer, varied composition barrier layer in place of the typical single layer barrier layer of an infrared photodetector results in a device with increased sensitivity and reduced dark current. A first barrier is adjacent the semiconductor contact; a second barrier layer is between the first barrier layer and the absorber layer. The barrier layers may be doped N type or P type with Beryllium, Carbon, Silicon or Tellurium. The energy bandgap is designed to facilitate minority carrier current flow in the contact region and block minority current flow outside the contact region.

摘要翻译： 使用多层，代替红外光电探测器的典型单层阻挡层的各种组成阻挡层导致具有增加的灵敏度和降低的暗电流的器件。 第一屏障邻近半导体触点; 第二阻挡层位于第一阻挡层和吸收层之间。 阻挡层可以是掺杂有N型或P型的铍，碳，硅或碲。 能量带隙被设计为便于接触区域中的少数载流子电流流动并阻止接触区域外的少数电流。

公开(公告)号：US20100026192A1

公开(公告)日：2010-02-04

申请号：US12444032

申请日：2007-10-04

申请人： Benjamin James Hadwen ,  Christopher James Brown

发明人： Benjamin James Hadwen ,  Christopher James Brown

IPC分类号： H05B37/02 ,  H01L31/10 ,  H01J40/00

CPC分类号： G01J1/44 ,  G01J1/1626 ,  G01J1/4204 ,  G09G3/3406 ,  G09G2360/144 ,  H01L31/105 ,  H01L31/111

摘要： A method of operating a photosensor comprising: applying a bias voltage to a photosensor (12) comprising n (n>1) photo-sensitive elements (8) connected in series, and determining the photocurrent in the photosensor (12) at a time when the applied bias voltage across the photosensor maintains the photosensor at or close to the point at which it has the greatest signal-to-noise ratio. This may conveniently be done by determining the current in the photosensor at a time when the applied bias voltage across the photosensor is equal or approximately equal to n×Vbi, where Vbi is the bias voltage about which the current in a single one of the photo-sensitive elements (8), in the dark, changes sign. In an embodiment in which the photo-sensitive elements (8) are photodiodes, the bias voltage Vbi is the “built-in” voltage of the photodiodes. The photocurrent generated when n series-connected photodiodes are illuminated is approximately equal to the photocurrent generated when one photodiode is illuminated. However, the leakage current (i.e., the dark current) for the n series-connected photodiodes is significantly lower than the leakage current for one photodiode. The signal-to-noise-ratio is therefore significantly increased.

摘要翻译： 一种操作光传感器的方法，包括：将偏置电压施加到包括串联连接的n（n> 1）个光敏元件（8）的光电传感器（12），并且在光电传感器（12）中确定光电流 光电传感器两端施加的偏置电压将光电传感器保持在或接近于具有最大信噪比的点。 这可以通过确定光电传感器中的电流在光电传感器两端施加的偏置电压等于或近似等于nxVbi的时间来确定光电传感器的电流，其中Vbi是单个光敏电流中的电流的偏置电压 元素（8），在黑暗中改变迹象。 在光敏元件（8）是光电二极管的实施例中，偏置电压Vbi是光电二极管的“内置”电压。 当n个串联连接的光电二极管被照亮时产生的光电流近似等于当一个光电二极管被照亮时产生的光电流。 然而，n个串联连接的光电二极管的漏电流（即暗电流）明显低于一个光电二极管的漏电流。 因此，信噪比显着增加。

公开(公告)号：US07262429B2

公开(公告)日：2007-08-28

申请号：US10512501

申请日：2003-04-28

申请人： Geoff W. Taylor

发明人： Geoff W. Taylor

IPC分类号： H01L26/06

CPC分类号： H01L31/111 ,  B82Y20/00 ,  H01L27/14643 ,  H01L27/14658 ,  H01L27/14806 ,  H01L27/14843 ,  H01L27/1485 ,  H01L29/205 ,  H01L29/74 ,  H01L31/03046 ,  H01L31/035236 ,  H01L31/035263 ,  H01L31/115 ,  Y02E10/544

摘要： An improved THz detection mechanism includes a heterojunction thyristor structure logically formed by an n-type quantum-well-base bipolar transistor and p-type quantum-wellbase bipolar transistor arranged vertically to share a common collector region. Antenna elements, which are adapted to receive electromagnetic radiation in a desired portion of the THz region, are electrically coupled (or integrally formed with) the p-channel injector electrodes of the heterojunction thyristor device such the that antenna elements are electrically connected to the p-type modulation doped quantum well interface of the device. THz radiation supplied by the antenna elements to the p-type quantum well interface increases electron temperature of a two-dimensional electron gas at the p-type modulation doped quantum well interface thereby producing a current resulting from thermionic emission over a potential barrier provided by said first-type modulation doped quantum well interface. This current flows over the p-type channel barrier to the ntype quantum well interface, thereby causing charge to accumulate in the n-type quantum well interface. The accumulated charge in the n-type quantum well interface is related to the intensity of the received THz radiation. The heterojunction-thyristor-based THz detector is suitable for many applications, including data communication applications and imaging applications.

摘要翻译： 改进的THz检测机构包括由n型量子阱基双极晶体管和p型量子阱基双极晶体管逻辑形成的异质结晶闸管结构，其垂直布置以共享公共集电极区域。 适于在THz区域的所需部分接收电磁辐射的天线元件与异质结晶闸管器件的p沟道注入器电极电耦合（或整体形成），使得天线元件电连接到p 型调制掺杂量子阱接口。 由天线元件向p型量子阱界面提供的太赫兹辐射增加了在p型调制掺杂量子阱界面处的二维电子气的电子温度，从而产生由所述电子势垒产生的电流， 第一类调制掺杂量子阱界面。 该电流流过p型沟道势垒到n型量子阱界面，从而使电荷累积在n型量子阱界面中。 n型量子阱界面中的累积电荷与接收的THz辐射的强度有关。 基于异质结晶闸管的THz检测器适用于许多应用，包括数据通信应用和成像应用。

公开(公告)号：US4520381A

公开(公告)日：1985-05-28

申请号：US455635

申请日：1983-01-05

申请人： Haruhiko Moriguchi ,  Masami Kurata

发明人： Haruhiko Moriguchi ,  Masami Kurata

IPC分类号： H04N1/028 ,  H01L27/14 ,  H01L27/146 ,  H01L31/10 ,  H01L31/111

CPC分类号： H01L27/14645 ,  H01L31/111

摘要： A polychromatic image sensor having a semiconductor for converting an optical signal into an electrical signal, in which the sensor is provided with at least two PN-junctions of which the depth from a light incident plane varies continuously. A plurality of sensors may be arranged into a sensor array.

摘要翻译： 一种具有用于将光信号转换为电信号的半导体的多色图像传感器，其中传感器设置有至少两个PN结，其中来自光入射面的深度连续变化。 多个传感器可以被布置成传感器阵列。

公开(公告)号：US3665340A

公开(公告)日：1972-05-23

申请号：US3665340D

申请日：1969-12-30

申请人： MATSUSHITA ELECTRIC WORKS LTD

发明人： KOJIMA KIYOSHI ,  ABE TOSHIRO

IPC分类号： G08B23/00 ,  H01L29/00 ,  H01L31/111 ,  H02M1/092 ,  H03B17/00 ,  H03B7/06

CPC分类号： H03B17/00 ,  G08B23/00 ,  H01L29/00 ,  H01L31/111 ,  H02M1/092

摘要： A photosensitive solid oscillator, which comprises an impurity layer formed on a surface of a semi-conductor wafer, two separate impurity layers formed on the other surface of said wafer as spaced along the surface from each other, and electrodes respectively provided at least on each of the latter two impurity layers. The respective impurity layers on both surfaces of the wafer are of a reversely conducting type semiconductor with respect to said wafer and contain an impurity of a higher concentration than in the wafer.

公开(公告)号：US20170187376A1

公开(公告)日：2017-06-29

申请号：US15313096

申请日：2015-05-21

申请人： Applied Physical Electronics L.C.

发明人： William Charles Nunnally

IPC分类号： H03K17/795 ,  H01L31/111 ,  H01L31/11

CPC分类号： H03K17/795 ,  H01L29/1004 ,  H01L29/42304 ,  H01L29/73 ,  H01L29/74 ,  H01L31/11 ,  H01L31/1105 ,  H01L31/111 ,  H01L31/1113

摘要： Methods and systems include constructing and operating a semiconductor device with a mid-band dopant layer. In various implementations, carriers that are optically excited in a mid-band dopant region may provide injection currents that may reduce transition times and increase achievable operating frequency in a bipolar junction transistor (BJT). In various implementations, carriers that are optically excited in a mid-band dopant region within a thyristor may improve closure transition time, effective current spreading velocity, and maximum rate of current rise.

公开(公告)号：US20150207015A1

公开(公告)日：2015-07-23

申请号：US14419608

申请日：2013-07-31

申请人： Applied Physical Electronics, L.C.

发明人： William C. Nunnally

IPC分类号： H01L31/105 ,  H01L31/167 ,  H01L31/0288

CPC分类号： H01L31/0288 ,  H01L31/105 ,  H01L31/1105 ,  H01L31/111 ,  H01L31/1113 ,  H01L31/1136 ,  H01L31/167

摘要： An optical method of collapsing the electric field of an innovatively fabricated, reverse-biased PN junction causes a semiconductor switch to transition from a current blocking mode to a current conduction mode in a planar electron avalanche. This switch structure and the method of optically initiating the switch closure is applicable to conventional semiconductor switch configurations that employ a reverse-biased PN junction, including, but not limited to, thyristors, bipolar transistors, and insulated gate bipolar transistors.

摘要翻译： 将创新制造的反向偏置PN结的电场塌缩的光学方法导致半导体开关在平面电子雪崩中从电流阻挡模式转变为电流导通模式。 该开关结构和光学启动开关闭合的方法适用于采用反向偏置PN结的常规半导体开关配置，其包括但不限于晶闸管，双极晶体管和绝缘栅双极晶体管。

公开(公告)号：US20070200940A1

公开(公告)日：2007-08-30

申请号：US11362711

申请日：2006-02-28

申请人： Russell Gruhlke ,  Dariusz Burak ,  Thomas Dungan

发明人： Russell Gruhlke ,  Dariusz Burak ,  Thomas Dungan

IPC分类号： H04N9/083 ,  H04N3/14 ,  H04N5/335 ,  H04N9/04

CPC分类号： G02B5/201 ,  B82Y20/00 ,  G02B5/008 ,  G02B6/1226 ,  H01L27/1462 ,  H01L27/14647 ,  H01L31/111 ,  H04N2209/047

摘要： A vertical tri-color sensor having vertically stacked blue, green, and red pixels detects at least blue and green components of incident light by converting the blue and green components to surface plasmons.

摘要翻译： 具有垂直堆叠的蓝色，绿色和红色像素的垂直三色传感器通过将蓝色和绿色部件转换成表面等离子体激元来至少检测入射光的至少蓝色和绿色分量。