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公开(公告)号：US5019721A
公开(公告)日：1991-05-28
申请号：US395965
申请日：1989-08-18
CPC分类号： H01L39/225 , H01L39/145 , H03K17/92 , H03K3/38 , Y10S505/865 , Y10S505/874
摘要： Active superconducting devices are formed of thin films of superconductor which include a main conduction channel which has an active weak link region. The weak link region is composed of an array of links of thin film superconductor spaced from one another by voids and selected in size and thickness such that magnetic flux can propagate across the weak link region when it is superconducting. Magnetic flux applied to the weak link region will propagate across the array of links causing localized loss of superconductivity in the links and changing the effective resistance across the links. The magnetic flux can be applied from a control line formed of a superconducting film deposited coplanar with the main conduction channel and weak link region on a substrate. The devices can be formed of any type to superconductor but are particularly well suited to the high temperature superconductors since the devices can be entirely formed from coplanar films with no overlying regions. The devices can be utilized for a variety of electrical components, including switching circuits, amplifiers, oscillators and modulators, and are well suited to microwave frequency applications.
摘要翻译： 有源超导器件由超导体的薄膜形成，其包括具有有源弱连接区域的主导通道。 弱连接区域由薄膜超导体的连接阵列组成，薄壁超导体通过空隙彼此间隔开并且在尺寸和厚度上选择，使得当超导时磁通量可以在弱连接区域上传播。 施加到弱连接区域的磁通量将传播到连接的阵列上，导致链路中的超导性的局部损失并且改变跨越链路的有效电阻。 磁通量可以由与基板上的主导电通道和弱连接区共面共面的超导膜形成的控制线施加。 器件可以由任何类型的超导体形成，但是特别适合于高温超导体，因为器件可以由没有上覆区域的共面膜完全形成。 这些器件可用于各种电气元件，包括开关电路，放大器，振荡器和调制器，并且非常适合于微波频率应用。
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公开(公告)号：US09509315B2
公开(公告)日：2016-11-29
申请号：US14775172
申请日：2014-03-11
CPC分类号： H03K19/195 , H01L39/025 , H01L39/10 , H01L39/12 , H01L39/125 , H01L39/126 , H01L39/145 , H03K19/20
摘要： A three-terminal device that exhibits transistor-like functionality at cryogenic temperatures may be formed from a single layer of superconducting material. A main current-carrying channel of the device may be toggled between superconducting and normal conduction states by applying a control signal to a control terminal of the device. Critical-current suppression and device geometry are used to propagate a normal-conduction hotspot from a gate constriction across and along a portion of the main current-carrying channel. The three-terminal device may be used in various superconducting signal-processing circuitry.
摘要翻译： 在低温下呈现晶体管状功能的三端子器件可以由单层超导材料形成。 通过将控制信号施加到装置的控制端，装置的主载流通道可以在超导和正常导通状态之间切换。 临界电流抑制和器件几何形状用于沿着主载流通道的一部分沿着栅极收缩传播正常导通热点。 三端器件可用于各种超导信号处理电路。
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公开(公告)号：US5550389A
公开(公告)日：1996-08-27
申请号：US171869
申请日：1993-12-22
申请人： Toshikazu Nishino , Mutsuko Hatano , Haruhiro Hasegawa , Hideaki Nakane , Ushio Kawabe , Kazuo Saitoh , Mitsuo Suga , Kazumasa Takagi
发明人： Toshikazu Nishino , Mutsuko Hatano , Haruhiro Hasegawa , Hideaki Nakane , Ushio Kawabe , Kazuo Saitoh , Mitsuo Suga , Kazumasa Takagi
CPC分类号： H01L39/145
摘要： A superconducting device low in power dissipation and high in operating speed is fabricated by use of a combination of a superconductor material and a semiconductor material. The superconducting device having a low power dissipation and high operating speed characteristic according to the present invention is suitable for configuring a large-scale integrated circuit.
摘要翻译： 通过使用超导体材料和半导体材料的组合来制造功耗低且工作速度高的超导装置。 根据本发明的具有低功耗和高工作速度特性的超导装置适用于配置大规模集成电路。
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公开(公告)号：US5571778A
公开(公告)日：1996-11-05
申请号：US413999
申请日：1995-03-30
申请人： Manabu Fujimoto , Katsumi Suzuki , Youichi Enomoto , Shoji Tanaka
发明人： Manabu Fujimoto , Katsumi Suzuki , Youichi Enomoto , Shoji Tanaka
CPC分类号： H01L27/18 , H01L39/145 , H01L39/2496 , Y10S505/728
摘要： A superconductor junction material is disclosed which comprises a substrate of a single crystal, and at least flux flow element, and optionally at least one Josephson junction element, provided on the surface, each of the flux flow and Josephson junction elements being formed of a superconducting oxide layer having a weak link. The flux flow and Josephson junction elements are prepared by vacuum deposition at different oxygen partial pressures.
摘要翻译： 公开了一种超导体接合材料，其包括单晶体的衬底，以及设置在表面上的至少一个通量流动元件和任选的至少一个约瑟夫逊结元件，每个磁通流和约瑟夫逊结元件由超导体 具有弱连接的氧化物层。 通过真空沉积在不同的氧分压下制备通量流和约瑟夫逊结元件。
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公开(公告)号：US4999337A
公开(公告)日：1991-03-12
申请号：US306751
申请日：1989-02-06
申请人： Takahiro Yamada
发明人： Takahiro Yamada
IPC分类号： H01L21/337 , H01L29/66 , H01L29/68 , H01L29/80 , H01L29/808 , H01L39/14 , H01L39/22
CPC分类号： H01L39/145 , H01L39/228
摘要： A superconductive transistor in which a complementary circuit is composed of semiconductor materials having pn junctions, that is, pnp type transistor and npn type transistor, and wiring is formed by using superconductive materials. As a result, the on/off conduction control by making use of the tunneling effect of pn junctions is possible, and a superconductive transistor having a least change of generating quasiparticles can be presented.
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公开(公告)号：US20130079230A1
公开(公告)日：2013-03-28
申请号：US13703225
申请日：2011-06-03
申请人： Ulrich Poppe , Dieter Weber , Yuriy Divin , Mikhail Faley
发明人： Ulrich Poppe , Dieter Weber , Yuriy Divin , Mikhail Faley
IPC分类号： H01L39/22
CPC分类号： H01L39/223 , G11C13/0007 , G11C13/04 , G11C2213/17 , G11C2213/53 , H01L39/145 , H01L39/228 , H01L45/08 , H01L45/1206 , H01L45/1226 , H01L45/1266 , H01L45/147
摘要： A three-port component comprises a source electrode, a drain electrode, and a channel, which is corrected between the source electrode and the drain electrode and which is made of a material haying an electronic conductivity that can be varied by supplying and/or removing ions. The three-port component comprises an ion reservoir, which is in contact with a gate electrode, and which is connected to the channel so that the reservoir is able to exchange ions with the channel when a potential is applied to the gate electrode. Information can be stored on the three-port component by distributing the total number of ions, which are present in the ion reservoir and the channel, between the ion reservoir and the channel. The distribution of ions in the channel and the ion reservoir changes when, and only when, a corresponding driving potential is applied to the gate electrode. Thus, in contrast to RRAMS, there is no time-voltage dilemma.
摘要翻译： 三端口部件包括源电极，漏电极和沟道，其在源电极和漏电极之间被校正，并且由具有电导率的材料制成，该材料可以通过供应和/或去除 离子。 三端口部件包括与栅电极接触的离子储存器，并且连接到通道，使得当电势施加到栅电极时，储存器能够与沟道交换离子。 信息可以通过分布在离子储存器和通道之间的离子储存器和通道中存在的总离子数存储在三端口部件上。 当并且仅当相应的驱动电位被施加到栅极电极时，通道和离子储存器中的离子分布发生变化。 因此，与RRAMS相比，没有时间电压困境。
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7.发明授权
公开(公告)号：US5338943A
公开(公告)日：1994-08-16
申请号：US115502
申请日：1993-09-01
CPC分类号： H03K17/92 , H01L39/145 , Y10S505/853 , Y10S505/865
摘要： A magnetic flux-enhanced control line for a superconducting flux flow transistor (SFFT). The SFFT includes a pair of superconducting electrodes which provide a voltage output, a region of weakened superconductor connecting the electrodes and a control line. The region of weakened superconductor carries a current I.sub.body and the control line carries a current I.sub.Control. The control line further has a portion thereof proximate the weakened region for providing a localized magnetic field through the weakened region as a function of I.sub.Control. The magnetic flux through the weakened region induces vortices therein which have a resistance r.sub.o. The proximate portion of the control line forms a tortuous current path whereby the magnetic flux through the weakened region is increased for increasing r.sub.o so that the output voltage of the transistor is increased without increasing I.sub.Control.
摘要翻译： 一种用于超导磁通流量晶体管（SFFT）的磁通增强控制线。 SFFT包括提供电压输出的一对超导电极，连接电极的弱化超导体区域和控制线。 弱化超导体的区域带有电流I控制线，并且控制线承载当前的IControl。 控制线还具有靠近弱化区域的部分，用于通过作为IControl的函数的弱化区域提供局部磁场。 通过弱化区域的磁通量在其中引起具有电阻ro的涡流。 控制线的最近部分形成曲折电流路径，由此通过弱化区域的磁通量增加以增加ro，从而在不增加IControl的情况下增加晶体管的输出电压。
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公开(公告)号：US5229655A
公开(公告)日：1993-07-20
申请号：US816395
申请日：1991-12-26
CPC分类号： H03K17/92 , H01L39/145 , H03K3/38
摘要： A superconducting active device has dual control inputs and is constructed such that the output of the device is effectively a linear mix of the two input signals. The device is formed of a film of superconducting material on a substrate and has two main conduction channels, each of which includes a weak link region. A first control line extends adjacent to the weak link region in the first channel and a second control line extends adjacent to the weak link region in the second channel. The current flowing from the first channel flows through an internal control line which is also adjacent to the weak link region of the second channel. The weak link regions comprise small links of superconductor, separated by voids, through which the current flows in each channel. Current passed through the control lines causes magnetic flux vortices which propagate across the weak link regions and control the resistance of these regions. The output of the device taken across the input to the main channels and the output of the second main channel and the internal control line will constitute essentially a linear mix of the two input signals imposed on the two control lines. The device is especially suited to microwave applications since it has very low input capacitance, and is well suited to being formed of high temperature superconducting materials since all of the structures may be formed coplanar with one another on a substrate.
摘要翻译： 超导有源器件具有双重控制输入，并且被构造成使得器件的输出实际上是两个输入信号的线性混合。 该器件由衬底上的超导材料膜形成，并且具有两个主要导电通道，每个导电通道包括弱连接区域。 第一控制线在第一通道中相邻于弱连接区延伸，第二控制线在第二通道中与弱连接区相邻延伸。 从第一通道流出的电流流过也与第二通道的弱连接区相邻的内部控制线。 弱连接区域包括由空隙隔开的超导体的小环节，电流在每个通道中流过。 通过控制线的电流导致磁通量涡流传播穿过弱连接区域并控制这些区域的电阻。 通过输入到主通道的设备的输出和第二主通道和内部控制线的输出将基本上构成施加在两个控制线上的两个输入信号的线性混合。 该器件特别适用于微波应用，因为它具有非常低的输入电容，并且非常适合于由高温超导材料形成，因为所有的结构可以在基板上彼此共面形成。
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公开(公告)号：US20180090661A1
公开(公告)日：2018-03-29
申请号：US15563158
申请日：2016-04-01
CPC分类号： H01L39/10 , G11C11/44 , H01L39/145
摘要： An active three-terminal superconducting device having an intersection region at which a hot spot may be controllably formed is described. The intersection region may exhibit current crowding in response to imbalances in current densities applied to channels connected to intersection region. The current crowding may form a hot spot, in which the superconducting device may exhibit a measurable resistance. In some cases, a three-terminal superconducting device may be configured to sense an amount of superconducting current flowing in a channel or loop without having to perturb the superconducting state or amount of current flowing in the channel. A three-terminal superconducting device may be used to read out a number of fluxons stored in a superconducting memory element.
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公开(公告)号：US20160028403A1
公开(公告)日：2016-01-28
申请号：US14775172
申请日：2014-03-11
IPC分类号： H03K19/195 , H03K19/20
CPC分类号： H03K19/195 , H01L39/025 , H01L39/10 , H01L39/12 , H01L39/125 , H01L39/126 , H01L39/145 , H03K19/20
摘要： A three-terminal device that exhibits transistor-like functionality at cryogenic temperatures may be formed from a single layer of superconducting material. A main current-carrying channel of the device may be toggled between superconducting and normal conduction states by applying a control signal to a control terminal of the device. Critical-current suppression and device geometry are used to propagate a normal-conduction hotspot from a gate constriction across and along a portion of the main current-carrying channel. The three-terminal device may be used in various superconducting signal-processing circuitry.
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