中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

195 records (took 0.02 seconds)

筛选除外

    Semiconductor laser apparatus
    1.
    发明授权
    Semiconductor laser apparatus 有权

    公开(公告)号：US10050413B2

    公开(公告)日：2018-08-14

    申请号：US15708531

    申请日：2017-09-19

    Applicant: LandMark Optoelectronics Corporation

    Inventor： Shu-Wei Chiu ,  Yin-Jie Ma ,  Wei Lin

    IPC: H01S5/16 ,  H01S5/32 ,  H01S5/22 ,  H01S5/20

    CPC classification number: H01S5/3211 ,  H01S5/1014 ,  H01S5/162 ,  H01S5/164 ,  H01S5/2031 ,  H01S5/222 ,  H01S2301/185

    Abstract: A semiconductor laser apparatus is provided and has a substrate, a first type cladding layer, a first type waveguide layer, an active layer, a second type waveguide layer, a second type cladding layer, and a capping layer disposed in sequence. The active layer has a light producing portion and a light emitting portion. A laser produced by the light producing portion, emits along a direction from the light producing portion toward the light emitting portion. The light emitting portion includes a first inactive region, a light emitting region, and a second inactive region. A refractive index of the light emitting region is lower than a refractive index of the first inactive region, the refractive index of the light emitting region is lower than a refractive index of the second inactive region, and width of a first part of the light emitting region continuously increases along the direction.

    OPTICAL SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
    2.
    发明申请
    OPTICAL SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME 有权
    光学半导体器件及其制造方法

    公开(公告)号：US20140036948A1

    公开(公告)日：2014-02-06

    申请号：US13944520

    申请日：2013-07-17

    Applicant: FUJITSU LIMITED

    Inventor： Akinori HAYAKAWA ,  Takeshi Matsumoto

    IPC: H01S5/343

    CPC classification number: H01S5/343 ,  H01S5/0287 ,  H01S5/06258 ,  H01S5/12 ,  H01S5/1203 ,  H01S5/1218 ,  H01S5/164 ,  H01S5/2231 ,  H01S2301/163

    Abstract: An optical semiconductor device includes a semiconductor substrate; a lower cladding layer formed over the semiconductor substrate; a quantum well active layer formed on the lower cladding layer; a diffraction grating layer formed over the quantum well active layer and having diffraction gratings formed in a surface thereof; and an upper cladding layer formed on the diffraction gratings of the diffraction grating layer. Further, a band gap in outer regions of the quantum well active layer that are adjacent to outer end surfaces of the optical semiconductor device is greater than the band gap in an inner region of the quantum well active layer that is located between the outer regions, and a thickness of one or more layers, which include the lower cladding layer and positioned between the semiconductor substrate and the quantum well active layer, is greater than or equal to 2.3 μm.

    Abstract translation: 光学半导体器件包括半导体衬底; 形成在所述半导体衬底上的下包层; 形成在下包层上的量子阱有源层; 在量子阱有源层上形成的衍射光栅层，并在其表面上形成衍射光栅; 以及形成在衍射光栅层的衍射光栅上的上包层。 此外，与光学半导体器件的外端表面相邻的量子阱有源层的外部区域中的带隙大于位于外部区域之间的量子阱活性层的内部区域中的带隙， 并且包括下包层并且位于半导体衬底和量子阱活性层之间的一层或多层的厚度大于或等于2.3μm。

    Semiconductor laser device and method of producing the same
    4.
    发明授权
    Semiconductor laser device and method of producing the same 失效
    半导体激光器件及其制造方法

    公开(公告)号：US07430228B2

    公开(公告)日：2008-09-30

    申请号：US10896026

    申请日：2004-07-22

    Applicant: Nobuhiro Ohkubo

    Inventor： Nobuhiro Ohkubo

    IPC: H01S5/00

    CPC classification number: H01S5/22 ,  H01S5/164 ,  H01S5/168 ,  H01S5/2205

    Abstract: In an AlGaInP semiconductor laser device, at least a first conductivity type first cladding layer, an active layer and a second conductivity type second cladding layer are formed on a semiconductor substrate. The second cladding layer forms a stripe-shaped ridge on a side opposite from the substrate, and a first conductivity type current block layer is disposed on both sides of the ridge. The first conductivity type current block layer has a lattice mismatch rate of −0.20% or more but not more than 0% relative to the semiconductor substrate. The lattice mismatch rate may be uniform within the current block layer. Alternatively, the lattice mismatch rate may increase continuously or stepwise with an increasing distance from a portion of the second conductivity type second cladding layer other than the ridge.

    Abstract translation: 在AlGaInP半导体激光器件中，在半导体衬底上形成至少第一导电型第一包覆层，有源层和第二导电型第二覆盖层。 第二包覆层在与基板相反的一侧形成条状的脊，并且第一导电型电流阻挡层设置在脊的两侧。 第一导电型电流阻挡层相对于半导体衬底具有-0.20％以上但不超过0％的晶格失配率。 晶格失配率在当前阻挡层内可能是均匀的。 或者，晶格失配率可以随着与除了脊之外的第二导电类型的第二包覆层的一部分的距离的增加而连续地或逐步地增加。

    Light-Emitting Device Structure Using Nitride Bulk Single Crystal Layer
    5.
    发明申请
    Light-Emitting Device Structure Using Nitride Bulk Single Crystal Layer 有权
    使用氮化物单晶层的发光器件结构

    公开(公告)号：US20080108162A1

    公开(公告)日：2008-05-08

    申请号：US11969735

    申请日：2008-01-04

    Applicant: Robert DWILINSKI ,  Roman Doradzinski ,  Jerzy Garczynski ,  Leszek Sierzputowski ,  Yasuo Kanbara

    Inventor： Robert DWILINSKI ,  Roman Doradzinski ,  Jerzy Garczynski ,  Leszek Sierzputowski ,  Yasuo Kanbara

    IPC: H01L33/00

    CPC classification number: C30B29/403 ,  B82Y20/00 ,  C30B7/005 ,  C30B7/10 ,  C30B9/00 ,  C30B29/406 ,  H01S5/021 ,  H01S5/0213 ,  H01S5/0218 ,  H01S5/0281 ,  H01S5/164 ,  H01S5/22 ,  H01S5/3202 ,  H01S5/32341 ,  H01S5/34333 ,  H01S2304/12

    Abstract: The object of this invention is to provide a high-output type nitride light emitting device. The nitride light emitting device comprises an n-type nitride semiconductor layer or layers, a p-type nitride semiconductor layer or layers and an active layer therebetween, wherein a gallium-containing nitride substrate is obtained from a gallium-containing nitride bulk single crystal, provided with an epitaxial growth face with dislocation density of 105/cm2 or less, and A-plane or M-plane which is parallel to C-axis of hexagonal structure for an epitaxial face, wherein the n-type semiconductor layer or layers are formed directly on the A-plane or M-plane. In case that the active layer comprises a nitride semiconductor containing In, an end face film of single crystal AlxGa1-xN (0≦x≦1) can be formed at a low temperature not causing damage to the active layer.

    Abstract translation: 本发明的目的是提供一种高输出型氮化物发光器件。 氮化物发光器件包括n型氮化物半导体层或p型氮化物半导体层或其间的有源层，其中含镓氮化物衬底由含镓氮化物本体单晶获得， 具有位错密度为10 5 / cm 2以下的外延生长面，平行于六方结构的C轴的A面或M面 对于外延面，其中n型半导体层直接形成在A平面或M平面上。 在有源层包括含有In的氮化物半导体的情况下，单晶Al x Ga 1-x N（0 <= x <= 1）的端面膜， 可以在不会对活性层造成损害的低温下形成。

    Semiconductor laser element and process for producing the same
    8.
    发明授权
    Semiconductor laser element and process for producing the same 失效
    半导体激光元件及其制造方法

    公开(公告)号：US06959026B2

    公开(公告)日：2005-10-25

    申请号：US10327862

    申请日：2002-12-26

    Applicant: Nobuhiro Ohkubo

    Inventor： Nobuhiro Ohkubo

    IPC: H01S5/16 ,  H01S5/223 ,  H01S5/323 ,  H01S5/343 ,  H01S5/00

    CPC classification number: H01S5/164 ,  H01S5/168 ,  H01S5/2231 ,  H01S5/3072 ,  H01S5/32316 ,  H01S2301/173

    Abstract: In a semiconductor laser element, a semiconductor layer interface 116 containing oxygen atoms is present above an active layer 103 in at least an internal region of a laser resonator. Also, the peak wavelength of photoluminescence of the active layer 103 in regions in the vicinity of end faces of the laser resonator is made shorter than that of the active layer in the internal region of the laser resonator. In the internal region of the laser resonator, vacancies (crystal defects) produced above and in the neighborhood of the semiconductor layer interface containing oxygen atoms are captured at this semiconductor layer interface. Diffusion of the vacancies to the active layer is thus suppressed.

    Abstract translation: 在半导体激光元件中，在激光谐振器的至少内部区域中，在有源层103的上方存在含有氧原子的半导体层界面116。 此外，激光谐振器的端面附近的区域中的有源层103的光致发光的峰值波长比激光谐振器的内部区域中的有源层的峰值波长短。 在激光谐振器的内部区域中，在该半导体层界面处捕获在包含氧原子的半导体层界面上方和附近产生的空位（晶体缺陷）。 因此抑制空位向活性层的扩散。

    Method for fabricating semiconductor light emitting device
    10.
    发明申请
    Method for fabricating semiconductor light emitting device 有权
    制造半导体发光器件的方法

    公开(公告)号：US20040115847A1

    公开(公告)日：2004-06-17

    申请号：US10687647

    申请日：2003-10-20

    Applicant: Matsushita Electric Industrial Co., Ltd.

    Inventor： Yoshiaki Hasegawa ,  Toshitaka Shimamoto ,  Gaku Sugahara

    IPC: H01L021/00

    CPC classification number: B82Y20/00 ,  H01S5/0207 ,  H01S5/1039 ,  H01S5/164 ,  H01S5/22 ,  H01S5/3203 ,  H01S5/32341 ,  H01S5/34333 ,  H01S2304/12

    Abstract: A method for fabricating a semiconductor light emitting device, the method comprising the steps of: repeatedly forming, on a first nitride based Group III-V compound semiconductor layer, stripe-shaped masking films in a predetermined cycle in a width-wise direction thereof, each masking film comprising first width sections having a predetermined width and second width sections which are adjacent to both ends of each first width section and have a greater width than the predetermined width; selectively growing a second nitride based Group III-V compound semiconductor layer from exposed parts of a surface of the first nitride based Group III-V compound semiconductor so as to cover the masking films and the exposed parts, each of the exposed parts being located between the masking films; and layering a semiconductor laser structure on the second nitride based Group III-V compound semiconductor layer, the semiconductor laser structure including an active layer which substantially extends in a length-wise direction of the masking films and level difference portions which extend in the width-wise direction by a structure in which a portion located above the second width sections is lower than a portion located above the first width sections.

    Abstract translation: 一种制造半导体发光器件的方法，所述方法包括以下步骤：在第一氮化物基III-V族化合物半导体层上，沿其宽度方向以预定的周期重复形成条状掩模膜， 每个掩模膜包括具有预定宽度的第一宽度部分和与每个第一宽度部分的两端相邻并且具有比预定宽度更大的宽度的第二宽度部分; 从第一氮化物基III-V族化合物半导体的表面的暴露部分选择性地生长第二氮化物基III-V族化合物半导体层，以覆盖掩模膜和暴露部分，每个暴露部分位于 掩模膜; 并且在所述第二氮化物基III-V族化合物半导体层上层叠半导体激光器结构，所述半导体激光器结构包括基本上在所述掩模膜的长度方向上延伸的有源层和在所述宽度方向上延伸的电平差部分， 通过其中位于第二宽度部分上方的部分低于位于第一宽度部分之上的部分的结构的方向。

Patent Agency Ranking