公开(公告)号：US20180233882A1

公开(公告)日：2018-08-16

申请号：US13771875

申请日：2013-02-20

申请人： VI Systems GmbH

发明人： Nikolay LEDENTSOV ,  Vitaly SHCHUKIN

IPC分类号： H01S5/183 ,  H01S5/02 ,  H01S5/20 ,  H01S5/22 ,  H01S5/10

CPC分类号： H01S5/18302 ,  H01S5/0215 ,  H01S5/1021 ,  H01S5/18311 ,  H01S5/1833 ,  H01S5/18333 ,  H01S5/18352 ,  H01S5/205 ,  H01S5/222 ,  H01S5/423 ,  H01S2301/166

摘要： Optical beam quality of an optoelectronic device is improved by suppression of high-order transverse optical modes by their resonant interaction with the continuum of modes in the surrounding regions, such continuum being realized by replacement of one or several layers by layers having a lower refractive index. In particular, selective oxidation of GaAlAs-based vertical cavity surface emitting laser results in (Ga)AlO layers surrounding the aperture and having a lower refractive index than the original (Ga)AlAs layers. The continuum of optical modes originates due to the modification of the optical field in the areas surrounding the aperture caused by the low index insertions positioned to result in enhancement of the optical field in their vicinity. High-order lateral optical modes in the aperture region exhibit larger leakage losses than the fundamental lateral optical mode due to the resonant interaction with the continuum of modes outside the aperture, enabling single-mode lasing from a broad aperture vertical cavity surface emitting laser.

公开(公告)号：US20180226771A1

公开(公告)日：2018-08-09

申请号：US15886113

申请日：2018-02-01

申请人： STANLEY ELECTRIC CO., LTD.

发明人： Komei TAZAWA ,  Ji-Hao LIANG ,  Seiichiro KOBAYASHI

IPC分类号： H01S5/22 ,  H01S5/042 ,  H01S5/343 ,  H01S5/34 ,  H01S5/183

CPC分类号： H01S5/2205 ,  H01L33/105 ,  H01S5/0425 ,  H01S5/183 ,  H01S5/18311 ,  H01S5/18333 ,  H01S5/18341 ,  H01S5/18352 ,  H01S5/18369 ,  H01S5/2013 ,  H01S5/3407 ,  H01S5/34333 ,  H01S5/34346

摘要： A vertical-cavity light-emitting element includes: a first reflector; a semiconductor structure layer including a first semiconductor layer, an active layer, a second semiconductor layer, and a third semiconductor layer that are sequentially provided on the first reflector; a transparent electrode on the third semiconductor layer; and a second reflector on the transparent electrode and interposes the structure layer with the first reflector. The third semiconductor layer has a mesa structure to protrude on the second semiconductor layer and be covered by the transparent electrode. The light emitting element further includes a current confining layer including: an insulating film provided in the second semiconductor layer to surround the mesa structure and be in contact with the transparent electrode, the insulating film being an oxide of the second semiconductor layer; and an insulating layer on the insulating film to surround the mesa structure and define a through opening.

公开(公告)号：US20160248226A1

公开(公告)日：2016-08-25

申请号：US15148065

申请日：2016-05-06

申请人： Seiko Epson Corporation

发明人： Tsuyoshi KANEKO ,  Tetsuo NISHIDA ,  Yuji KURACHI

IPC分类号： H01S5/187 ,  H01S5/343 ,  H01S5/183

CPC分类号： H01S5/187 ,  G04F5/145 ,  H01S5/0421 ,  H01S5/0425 ,  H01S5/18313 ,  H01S5/18333 ,  H01S5/1835 ,  H01S5/18352 ,  H01S5/3432 ,  H03L7/26

摘要： A vertical cavity surface emitting laser includes: a substrate; and a laminated body which is provided over the substrate, wherein the laminated body includes a first mirror layer provided over the substrate, an active layer provided over the first mirror layer, and a second mirror layer provided over the active layer, in a plan view, the laminated body includes a first portion having a first width, a second portion having a second width, and a third portion which is provided between the first portion and the second portion and has a third width wider than the first width or the second width, and a resin layer which covers at least one portion of the first portion is provided.

公开(公告)号：US08670471B2

公开(公告)日：2014-03-11

申请号：US12711111

申请日：2010-02-23

申请人： Seheon Kim ,  Axel Scherer

发明人： Seheon Kim ,  Axel Scherer

IPC分类号： H01S3/10

CPC分类号： H01S5/183 ,  B82Y20/00 ,  H01L31/0352 ,  H01L31/035281 ,  H01L33/0045 ,  H01L2933/0083 ,  H01S5/041 ,  H01S5/105 ,  H01S5/18319 ,  H01S5/18327 ,  H01S5/18352 ,  H01S5/34 ,  H01S5/3412 ,  Y02E10/50

摘要： Photonic crystal cavities and related devices and methods are described. The described cavities can be used as lasers, photovoltaic sources, and single photon sources. The cavities can be both optically and electrically pumped. A fabrication process of the cavities is also described.

摘要翻译： 描述了光子晶体腔及相关装置和方法。 所描述的空腔可以用作激光器，光电源和单个光子源。 空腔可以光学和电气泵送。 还描述了空腔的制造工艺。

公开(公告)号：US08599233B2

公开(公告)日：2013-12-03

申请号：US13147239

申请日：2009-12-22

申请人： Katsunari Hanaoka

发明人： Katsunari Hanaoka

IPC分类号： B41J2/45 ,  H01S5/00

CPC分类号： B41J2/442 ,  B41J2/455 ,  B41J2/473 ,  H01S5/18311 ,  H01S5/18352 ,  H01S5/2086 ,  H01S5/423

摘要： A disclosed vertical cavity surface emitting laser element includes a substrate, a laminated body sandwiching a semiconductor active layer with an upper reflecting mirror and a lower reflecting mirror, a lower electrode, and an upper electrode. The laser element emits laser light in a direction perpendicular to the surface of the substrate when an electric current is supplied between the upper electrode and the lower electrode. The laser element further includes a selective oxidation layer in the upper reflecting mirror having a current blocking structure made of an oxidized region and an unoxidized region, and a detectable portion formed on a side surface of a mesa structure shaped by the upper reflecting mirror including the selective oxidation layer and the active layer, thereby enabling detecting the position of the selective oxidation layer from a top of the laminated body in a depth direction of the laminated body.

摘要翻译： 所公开的垂直腔表面发射激光器元件包括基板，夹着半导体有源层与上反射镜和下反射镜，下电极和上电极的层叠体。 当在上电极和下电极之间提供电流时，激光元件在垂直于衬底表面的方向上发射激光。 激光元件还包括在上反射镜中具有由氧化区域和非氧化区域构成的电流阻挡结构的选择性氧化层，以及形成在由上反射镜形成的台面结构的侧表面上的可检测部分， 选择性氧化层和有源层，从而能够在层叠体的深度方向上从层叠体的顶部检测选择氧化层的位置。

公开(公告)号：US20130051421A1

公开(公告)日：2013-02-28

申请号：US13592728

申请日：2012-08-23

申请人： Silke Traut ,  Stephanie Saintenoy

发明人： Silke Traut ,  Stephanie Saintenoy

IPC分类号： H01S5/028 ,  H01L21/30

CPC分类号： H01S5/0282 ,  H01S5/0283 ,  H01S5/18313 ,  H01S5/18352 ,  H01S5/18369 ,  H01S2301/176

摘要： A semiconductor laser device formed on a semiconductor substrate, the device comprising: a passivation layer arranged on an upper surface of the device structure for resisting moisture ingress, wherein the passivation layer comprises an inner layer deposited on the upper surface of the device by atomic layer deposition and an outer layer deposited on the inner layer, and comprising a material that is inert in the presence of water.

摘要翻译： 一种形成在半导体衬底上的半导体激光器件，该器件包括：钝化层，布置在器件结构的上表面上，用于抵抗水分侵入，其中钝化层包括通过原子层沉积在器件的上表面上的内层 沉积物和沉积在内层上的外层，并且包含在水存在下为惰性的材料。

公开(公告)号：US08189642B1

公开(公告)日：2012-05-29

申请号：US12710173

申请日：2010-02-22

申请人： Nein-Yi Li ,  Chuan Xie ,  Chun Lei ,  Richard F. Carson

发明人： Nein-Yi Li ,  Chuan Xie ,  Chun Lei ,  Richard F. Carson

IPC分类号： H01S5/00

CPC分类号： H01S5/18352 ,  H01S5/0021 ,  H01S5/18313 ,  H01S5/18327 ,  H01S5/1833 ,  H01S2301/176

摘要： A vertical surface emitting laser having a mesa structure formed with sloping side walls. A passivation layer including at least two sublayers at least partially covers the mesa structure. The at least two sublayers have differing stress components arranged to at least partially counter each other. By making the mesa structure with sloping side walls, the deposition of the passivation layer in such a way as to minimize the net stress of the passivation layer is facilitated. In addition, the mesa structure has a first stack of mirror layers comprising a semiconductor material doped with a first dopant and having first peripheral oxidized portions extending a first distance into said first stack, and a second stack of mirror layers comprising a semiconductor material doped with a second dopant and having second peripheral oxidized portions extending a second distance into said second stack, wherein the first distance is different from the second distance. By controlling the first distance and the second distance appropriately, the internal stress in the mesa structure can be reduced.

摘要翻译： 具有形成有倾斜侧壁的台面结构的垂直表面发射激光器。 包括至少两个子层的钝化层至少部分地覆盖台面结构。 至少两个子层具有不同的应力分量，其布置成至少部分地相互对抗。 通过使具有倾斜侧壁的台面结构，钝化层的沉积以使钝化层的净应力最小化的方式变得容易。 此外，台面结构具有包括掺杂有第一掺杂剂的半导体材料的第一层反射镜层，并且具有第一距离延伸到所述第一堆叠中的第一外围氧化部分，以及第二层反射镜层，其包括掺杂有 第二掺杂剂并且具有将第二距离延伸到所述第二堆叠中的第二外围氧化部分，其中所述第一距离与所述第二距离不同。 通过适当地控制第一距离和第二距离，可以减小台面结构中的内部应力。

公开(公告)号：US20110116147A1

公开(公告)日：2011-05-19

申请号：US12917080

申请日：2010-11-01

申请人： Hiroshi MOTOMURA ,  Shunichi Sato

发明人： Hiroshi MOTOMURA ,  Shunichi Sato

IPC分类号： G02B26/08 ,  G02B26/10 ,  H01S5/00

CPC分类号： H01S5/18313 ,  B41J2/473 ,  B82Y20/00 ,  H01S5/0425 ,  H01S5/18338 ,  H01S5/18347 ,  H01S5/1835 ,  H01S5/18352 ,  H01S5/18355 ,  H01S5/18377 ,  H01S5/18391 ,  H01S5/18394 ,  H01S5/3434 ,  H01S5/423 ,  H01S2302/00

摘要： A disclosed surface emitting laser device includes an oscillator structure including an active layer, semiconductor multilayer reflection mirrors sandwiching the oscillator structure, an electrode provided on an emitting surface where light is emitted in a manner such that the electrode surrounds an emitting region, and a dielectric film formed in at least one region outside a center part of the emitting region so that a refractive index of the region outside the center part of the emitting region is less than the refractive index of the center part of the emitting region. When viewed from an emitting direction of the light, a part of the electrode overlaps a part of the dielectric film.

摘要翻译： 公开的表面发射激光器件包括：振荡器结构，其包括有源层，夹着振荡器结构的半导体多层反射镜，设置在发光面上的电极，以使电极围绕发射区域的方式发射光;电介质 在发光区域的中心部分外的至少一个区域中形成的膜，使得发光区域的中心部分外的区域的折射率小于发光区域的中心部分的折射率。 当从光的发射方向观察时，电极的一部分与电介质膜的一部分重叠。

公开(公告)号：US07924899B2

公开(公告)日：2011-04-12

申请号：US12471588

申请日：2009-05-26

申请人： Takashi Kondo

发明人： Takashi Kondo

IPC分类号： H01S5/00

CPC分类号： H01S5/1833 ,  G02B6/4206 ,  H01S5/0655 ,  H01S5/18311 ,  H01S5/18333 ,  H01S5/18336 ,  H01S5/18352 ,  H01S5/3095 ,  H01S2301/166 ,  H01S2302/00

摘要： Provided is a VCSEL that includes a lower DBR of a first conductivity type, an active region, and an upper DBR of a second conductivity type, on a substrate. The lower DBR has a first to-be-oxidized Al-containing layer located farther from the active region than a second to-be-oxidized layer that is formed in the upper DBR. Both layers have an oxidized region and a first or a second non-oxidized region surrounded by the oxidized region. The first non-oxidized region is larger than the maximum size of the second non-oxidized region for a single mode oscillation, and smaller than the maximum size of the first non-oxidized region for a single mode oscillation. The second non-oxidized region is larger than the maximum size of the second non-oxidized region for a single mode oscillation. The first non-oxidized region has a size equal to or larger than that of the second non-oxidized region.

摘要翻译： 提供了一种在衬底上包括第一导电类型的下DBR，有源区和第二导电类型的上DBR的VCSEL。 较低的DBR具有比活性区域更远的第一待氧化的含Al层，而不是形成在上DBR中的第二被氧化层。 两层都具有被氧化区域包围的氧化区域和第一或第二非氧化区域。 第一非氧化区域大于单模振荡的第二非氧化区域的最大尺寸，并且小于单模振荡的第一非氧化区域的最大尺寸。 第二非氧化区域大于单模振荡的第二非氧化区域的最大尺寸。 第一非氧化区域的尺寸等于或大于第二非氧化区域的尺寸。

公开(公告)号：US07580438B2

公开(公告)日：2009-08-25

申请号：US11832005

申请日：2007-08-01

申请人： Masamitsu Mochizuki

发明人： Masamitsu Mochizuki

IPC分类号： H01S5/00

CPC分类号： H01S5/18388 ,  B82Y20/00 ,  H01S5/026 ,  H01S5/0425 ,  H01S5/18311 ,  H01S5/18352 ,  H01S5/3432 ,  H01S2301/166

摘要： A surface-emitting type semiconductor laser includes: a lower mirror; an active layer formed above the lower mirror; an upper mirror formed above the active layer; and a lens section formed above the upper mirror, wherein n1>n, where λ is a design wavelength, n1 is a refractive index of a topmost layer of the upper mirror with respect to light of the design wavelength, and n is a refractive index of the lens section with respect to light of the design wavelength, the lens section has a thickness of λ/2n at an anti-node of the zeroth order resonance mode component among light resonating in the active layer, and the lens section has a thickness of λ/4n at at least a portion of an anti-node of the first order resonance mode component among the light resonating in the active layer.

摘要翻译： 表面发射型半导体激光器包括：下反射镜; 形成在下反射镜上方的活性层; 形成在有源层上方的上反射镜; 以及形成在上反射镜上方的透镜部分，其中λ1是设计波长，其中n1是上反射镜的最上层相对于设计波长的光的折射率，n是折射率 相对于设计波长的光的透镜部分，透镜部分在有源层中谐振的光中在零级谐振模式分量的反节点处具有λ/ 2n的厚度，并且透镜部分具有厚度 在有源层中谐振的光的一阶谐振模式分量的反节点的至少一部分上的λ/ 4n。