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241 条记录 (耗时 0.021 秒)

    Semiconductor light device and fabrication method thereof
    1.
    发明授权
    Semiconductor light device and fabrication method thereof 有权
    半导体光器件及其制造方法

    公开(公告)号：US08969883B2

    公开(公告)日：2015-03-03

    申请号：US10534489

    申请日：2003-11-17

    申请人： Sung Ho Choo ,  Ja Soon Jang

    发明人： Sung Ho Choo ,  Ja Soon Jang

    IPC分类号： H01L33/30 ,  H01L33/40 ,  H01L33/32

    CPC分类号： H01L33/40 ,  H01L33/32 ,  Y10S257/918

    摘要： The present invention discloses a light device and a fabrication method thereof. An object of the present invention is to provide the light device and the fabrication method thereof an electric/thermal/structural stability is obtained, and a P-type electrode and an N-type electrode can be simultaneously formed. In order to achieve the above object, the inventive light device includes: a GaN-based layer; a high concentration GaN-based layer formed on the GaN-based layer; a first metal-Ga compound layer formed on the high concentration GaN-based layer; a first metal layer formed on the first metal-Ga compound layer; a third metal-Al compound layer formed on the first metal layer; and a conductive oxidation preventive layer formed on the third metal-Al compound layer.

    摘要翻译： 本发明公开了一种灯装置及其制造方法。 本发明的一个目的是提供一种光学器件及其制造方法，可以获得电/热/结构稳定性，并且可以同时形成P型电极和N型电极。 为了实现上述目的，本发明的光器件包括：GaN基层; 形成在GaN基层上的高浓度GaN基层; 形成在高浓度GaN基层上的第一金属-Ga化合物层; 形成在第一金属-Ga化合物层上的第一金属层; 形成在第一金属层上的第三金属-Al化合物层; 以及形成在第三金属-Al化合物层上的导电氧化防止层。

    Semiconductor device
    2.
    发明授权
    Semiconductor device 有权
    半导体器件

    公开(公告)号：US08835950B2

    公开(公告)日：2014-09-16

    申请号：US13398170

    申请日：2012-02-16

    申请人： Koichi Tachibana ,  Chie Hongo ,  Hajime Nago ,  Shinya Nunoue

    发明人： Koichi Tachibana ,  Chie Hongo ,  Hajime Nago ,  Shinya Nunoue

    IPC分类号： H01L29/22 ,  H01L33/02 ,  H01L33/26 ,  H01L33/30 ,  H01L33/32 ,  H01L33/00 ,  B82Y20/00 ,  H01S5/32 ,  H01S5/30 ,  H01S5/20 ,  H01S5/22 ,  H01S5/343

    CPC分类号： H01L33/0075 ,  B82Y20/00 ,  H01L33/02 ,  H01L33/305 ,  H01S5/2009 ,  H01S5/22 ,  H01S5/2224 ,  H01S5/3063 ,  H01S5/3072 ,  H01S5/3216 ,  H01S5/34333 ,  H01S2304/04 ,  Y10S257/918

    摘要： A semiconductor device has an active layer, a first semiconductor layer of first conductive type, an overflow prevention layer disposed between the active layer and the first semiconductor layer, which is doped with impurities of first conductive type and which prevents overflow of electrons or holes, a second semiconductor layer of first conductive type disposed at least one of between the active layer and the overflow prevention layer and between the overflow prevention layer and the first semiconductor layer, and an impurity diffusion prevention layer disposed between the first semiconductor layer and the active layer, which has a band gap smaller than those of the overflow prevention layer, the first semiconductor layer and the second semiconductor layer and which prevents diffusion of impurities of first conductive type.

    摘要翻译： 半导体器件具有有源层，第一导电类型的第一半导体层，设置在有源层和第一半导体层之间的防溢出层，其被掺杂有第一导电类型的杂质并且防止电子或空穴溢出， 第一导电类型的第二半导体层设置在有源层和溢出防止层之间以及溢出防止层和第一半导体层之间的至少之一以及设置在第一半导体层和有源层之间的杂质扩散防止层 其具有比溢出防止层，第一半导体层和第二半导体层的带隙小的带隙，并且防止第一导电类型的杂质的扩散。

    Surface emitting laser, method for producing surface emitting laser, and image forming apparatus
    5.
    发明授权
    Surface emitting laser, method for producing surface emitting laser, and image forming apparatus 有权
    表面发射激光器，表面发射激光器的制造方法和成像装置

    公开(公告)号：US08329524B2

    公开(公告)日：2012-12-11

    申请号：US13413973

    申请日：2012-03-07

    申请人： Mitsuhiro Ikuta

    发明人： Mitsuhiro Ikuta

    IPC分类号： H01L33/06

    CPC分类号： H01S5/18311 ,  H01S5/0286 ,  H01S5/18313 ,  H01S5/18316 ,  H01S5/18333 ,  H01S5/18347 ,  Y10S257/918

    摘要： A surface emitting laser includes a lower multilayer mirror, an active layer, and an upper multilayer mirror stacked onto a substrate. A first current confinement layer having a first electrically conductive region and a first insulating region is formed above or below the active layer using a first trench structure. A second current confinement layer having a second electrically conductive region and a second insulating region is formed above or below the first current confinement layer using a second trench structure. The first and second trench structures extend from a top surface of the upper multilayer mirror towards the substrate such that the second trench structure surrounds the first trench structure. When the surface emitting laser is viewed in an in-plane direction of the substrate, a boundary between the first electrically conductive region and the first insulating region is disposed inside the second electrically conductive region.

    摘要翻译： 表面发射激光器包括层叠在基板上的下多层反射镜，有源层和上多层反射镜。 使用第一沟槽结构在有源层的上方或下方形成具有第一导电区域和第一绝缘区域的第一电流限制层。 使用第二沟槽结构在第一电流限制层的上方或下方形成具有第二导电区域和第二绝缘区域的第二电流限制层。 第一和第二沟槽结构从上多层反射镜的顶表面延伸到衬底，使得第二沟槽结构围绕第一沟槽结构。 当在基板的面内方向上观察表面发射激光时，第一导电区域和第一绝缘区域之间的边界设置在第二导电区域的内部。

    LIGHT-EMITTING DEVICE AND MANUFACTURING METHOD THEREOF
    7.
    发明申请
    LIGHT-EMITTING DEVICE AND MANUFACTURING METHOD THEREOF 有权
    发光装置及其制造方法

    公开(公告)号：US20120168776A1

    公开(公告)日：2012-07-05

    申请号：US13415939

    申请日：2012-03-09

    申请人： Osamu Nakamura ,  Miyuki HIGUCHI ,  Yasuko WATANABE ,  Yasuyuki Arai

    发明人： Osamu Nakamura ,  Miyuki HIGUCHI ,  Yasuko WATANABE ,  Yasuyuki Arai

    IPC分类号： H01L33/48

    CPC分类号： H01L27/1266 ,  H01L27/12 ,  H01L27/1214 ,  H01L27/124 ,  H01L27/14645 ,  H01L27/3227 ,  H01L27/3253 ,  H01L27/3288 ,  H01L2227/326 ,  Y10S257/918

    摘要： To prevent a point defect and a line defect in forming a light-emitting device, thereby improving the yield. A light-emitting element and a driver circuit of the light-emitting element, which are provided over different substrates, are electrically connected. That is, a light-emitting element and a driver circuit of the light-emitting element are formed over different substrates first, and then electrically connected. By providing a light-emitting element and a driver circuit of the light-emitting element over different substrates, the step of forming the light-emitting element and the step of forming the driver circuit of the light-emitting element can be performed separately. Therefore, degrees of freedom of each step can be increased, and the process can be flexibly changed. Further, steps (irregularities) on the surface for forming the light-emitting element can be reduced than in the conventional technique.

    摘要翻译： 为了防止形成发光装置的点缺陷和线缺陷，从而提高产量。 设置在不同基板上的发光元件的发光元件和驱动电路电连接。 也就是说，发光元件的发光元件和驱动电路首先形成在不同的基板上，然后电连接。 通过在不同的基板上设置发光元件的发光元件和驱动电路，可以分别进行形成发光元件的步骤和形成发光元件的驱动电路的步骤。 因此，能够提高各步的自由度，能够灵活地变更处理。 此外，与传统技术相比，可以减少用于形成发光元件的表面上的台阶（凹凸）。

    Surface emitting laser with trenches to define conductive regions
    8.
    发明授权
    Surface emitting laser with trenches to define conductive regions 有权
    具有沟槽的表面发射激光器以限定导电区域

    公开(公告)号：US08188487B2

    公开(公告)日：2012-05-29

    申请号：US12837039

    申请日：2010-07-15

    申请人： Mitsuhiro Ikuta

    发明人： Mitsuhiro Ikuta

    IPC分类号： H01L29/26

    CPC分类号： H01S5/18311 ,  H01S5/0286 ,  H01S5/18313 ,  H01S5/18316 ,  H01S5/18333 ,  H01S5/18347 ,  Y10S257/918

    摘要： A surface emitting laser includes a lower multilayer mirror, an active layer, and an upper multilayer mirror stacked onto a substrate. A first current confinement layer having a first electrically conductive region and a first insulating region is formed above or below the active layer using a first trench structure. A second current confinement layer having a second electrically conductive region and a second insulating region is formed above or below the first current confinement layer using a second trench structure. The first and second trench structures extend from a top surface of the upper multilayer mirror towards the substrate such that the second trench structure surrounds the first trench structure. When the surface emitting laser is viewed in an in-plane direction of the substrate, a boundary between the first electrically conductive region and the first insulating region is disposed inside the second electrically conductive region.

    摘要翻译： 表面发射激光器包括层叠在基板上的下多层反射镜，有源层和上多层反射镜。 使用第一沟槽结构在有源层的上方或下方形成具有第一导电区域和第一绝缘区域的第一电流限制层。 使用第二沟槽结构在第一电流限制层的上方或下方形成具有第二导电区域和第二绝缘区域的第二电流限制层。 第一和第二沟槽结构从上多层反射镜的顶表面延伸到衬底，使得第二沟槽结构围绕第一沟槽结构。 当在基板的面内方向上观察表面发射激光时，第一导电区域和第一绝缘区域之间的边界设置在第二导电区域的内部。

    LIGHT-EMITTING ELEMENT AND LIGHT EMITTING DEVICE USING THE SAME
    9.
    发明申请
    LIGHT-EMITTING ELEMENT AND LIGHT EMITTING DEVICE USING THE SAME 有权
    发光元件和使用该发光元件的发光元件

    公开(公告)号：US20110278562A1

    公开(公告)日：2011-11-17

    申请号：US13196095

    申请日：2011-08-02

    申请人： Daisuke KUMAKI ,  Satoshi SEO

    发明人： Daisuke KUMAKI ,  Satoshi SEO

    IPC分类号： H01L51/52 ,  H01L51/56

    CPC分类号： H01L51/50 ,  H01L27/3244 ,  H01L27/3281 ,  H01L51/0051 ,  H01L51/0061 ,  H01L51/0071 ,  H01L51/0077 ,  H01L51/5088 ,  H01L51/5092 ,  H01L51/5262 ,  H01L2251/558 ,  Y10S257/918

    摘要： The present invention provides a light-emitting element having less increase in driving voltage with the accumulation of light-emission time, and provides a light-emitting element having less increase in resistance value with the increase in film thickness. A light-emitting element includes a first layer, a second layer and a third layer between a first electrode and a second electrode. The first layer is provided to be closer to the first electrode than the second layer, and the third layer is provided to be closer to the second electrode than the second layer. The first layer is a layer including an aromatic amine compound and a substance showing an electron accepting property to the aromatic amine compound. The second layer includes a substance of which an electron transporting property is stronger than a hole transporting property, and a substance showing an electron donating property to the aforementioned substance.

    摘要翻译： 本发明提供一种随着发光时间累积而具有较小驱动电压增加的发光元件，并提供随着膜厚度的增加而具有较小电阻值增加的发光元件。 发光元件包括在第一电极和第二电极之间的第一层，第二层和第三层。 第一层被提供为比第二层更靠近第一电极，并且第三层被提供为比第二层更靠近第二电极。 第一层是包含芳族胺化合物和对芳族胺化合物显示电子接受性的物质的层。 第二层包括电子传输性比空穴传输性强的物质，和表现出对上述物质的电子给予性的物质。