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    High-throughput ex-situ method for rare-earth-barium-copper-oxide (REBCO) film growth
    1.
    发明申请
    High-throughput ex-situ method for rare-earth-barium-copper-oxide (REBCO) film growth 有权
    稀土 - 钡 - 氧化铜（REBCO）薄膜生长的高通量异位法

    公开(公告)号：US20050127133A1

    公开(公告)日：2005-06-16

    申请号：US10736223

    申请日：2003-12-15

    Applicant: Venkat Selvamanickam

    Inventor： Venkat Selvamanickam

    IPC: C23C8/02 ,  C23C8/16 ,  H01L39/24 ,  B23K1/00

    CPC classification number: C23C8/02 ,  C23C8/16 ,  H01L39/2451 ,  Y10S505/73 ,  Y10S505/74 ,  Y10S505/742 ,  Y10T29/49014

    Abstract: The present invention provides a high-throughput system for the ex-situ formation of a superconducting thin film, such as rare-earth-barium-copper-oxide (REBCO), atop a continuous length of buffered metal substrate tape by heating a buffered metal substrate tape coated with precursors of REBCO These precursors, when heated and introduced to water vapor within a process chamber, decompose to form a functional superconducting thin film epitaxial to the buffer layer. A chamber such as a metalorganic chemical vapor deposition (MOCVD) reactor having showerhead and substrate heater assemblies designed for the creation of a long and wide deposition zone is well suited for use in the process the system. The chamber could be of cold-wall type where the walls are not heated or could of hot-wall type where the walls are heated.

    Abstract translation: 本发明提供了一种用于通过加热缓冲金属在连续长度的缓冲金属衬底带之上的超导薄膜例如稀土 - 氧化钡 - 氧化铜（REBCO）的非原位形成的高通量系统 涂覆有REBCO前体的基材带。当加热并将其引入处理室内的水蒸气时，这些前体分解形成向缓冲层外延的功能超导薄膜。 具有喷淋头和基板加热器组件的金属有机化学气相沉积（MOCVD）反应器的腔室，其设计用于产生长而宽的沉积区域，非常适用于该系统的过程。 该室可以是冷壁型，其中壁不加热或壁加热的热壁型。

    Critical doping in high-Tc superconductors for maximal flux pinning and critical currents
    3.
    发明申请
    Critical doping in high-Tc superconductors for maximal flux pinning and critical currents 失效
    用于最大磁通钉扎和临界电流的高Tc超导体中的临界掺杂

    公开(公告)号：US20030162666A1

    公开(公告)日：2003-08-28

    申请号：US10327408

    申请日：2002-12-20

    Inventor： Jeffery Lewis Tallon

    IPC: H01B001/00

    CPC classification number: H01L39/126 ,  Y10S505/742

    Abstract: A method for maximising critical current density (Jc) of high temperature superconducting cuprate materials (HTSC) which comprises controlling the doping state or hole concentration of the materials to be higher than the doping state or hole concentration of the material that provides a maximum superconducting transition temperature (Tc), and to lie at about a value where the normal-state pseudogap reduces to a minimum. Jc is maximised1 at hole concentration pnull0.19. HTSC compounds are also claimed.

    Abstract translation: 一种用于最大化高温超导铜酸盐材料（HTSC）的临界电流密度（Jc）的方法，其包括将材料的掺杂态或空穴浓度控制为高于提供最大超导转变的材料的掺杂态或空穴浓度 温度（Tc），并且处于约正常状态假峰值降至最小的值。 空穴浓度p≈0.19时Jc最大。 还要求HTSC化合物。

    Controlled conversion of metal oxyfluorides into superconducting oxides
    4.
    发明申请
    Controlled conversion of metal oxyfluorides into superconducting oxides 有权
    金属氟氧化物控制转化为超导氧化物

    公开(公告)号：US20020182451A1

    公开(公告)日：2002-12-05

    申请号：US10159870

    申请日：2002-05-30

    Inventor： John A. Smith ,  Michael J. Cima ,  Neville Sonnenberg

    IPC: H01L039/00 ,  B32B001/00 ,  H01F006/00 ,  B32B019/00 ,  B32B009/00 ,  H01B012/00

    CPC classification number: H01L39/2451 ,  Y10S428/93 ,  Y10S505/742

    Abstract: An oxide superconductor article is provided having an oxide superconductor film having a thickness of greater than 0.5 microns disposed on a substrate, said article having a transport critical current density (Jc) of greater than or equal to about 105 A/cm2 at 77K, zero field. The oxide superconductor film is characterized by high Jc and high volume percent of c-axis epitaxial oxide grains, even with thicknesses of up to 1 micron. The oxide superconductor article is prepared by providing a metal oxyfluoride film, said metal oxyfluoride film comprising the constituent metallic elements of an oxide superconductor in substantially stoichiometric proportions; and converting the metal oxyfluoride into the oxide superconductor at a rate of conversion selected by adjusting a reaction parameter selected from the group consisting of temperature, PH2O, PO2, and time and combinations thereof, such that an oxide superconductor film having a transport critical current density of greater than or equal to about 105 A/cm2 at 77K, zero field is obtained.

    Abstract translation: 提供氧化物超导体制品，其具有设置在基底上的厚度大于0.5微米的氧化物超导体膜，所述制品在77K处具有大于或等于约105A / cm 2的运输临界电流密度（Jc），为零 领域。 氧化物超导体膜的特征在于高Jc和高体积百分比的c轴外延氧化物晶粒，即使厚度高达1微米。 通过提供金属氟氧化物膜制备氧化物超导体制品，所述金属氟氧化物膜包含基本上化学计量比的氧化物超导体的构成金属元素; 以及通过调节从由温度，PH 2 O，PO 2及其组合组成的组中选择的反应参数而选择的转化率，将金属氟氧化物转化为氧化物超导体，使得具有传输临界电流密度的氧化物超导体膜 在77K时大于或等于约105A / cm 2，获得零场。

    Method of electrochemical formation of high Tc superconducting damascene interconnect for integrated circuit
    5.
    发明授权
    Method of electrochemical formation of high Tc superconducting damascene interconnect for integrated circuit 有权
    用于集成电路的高Tc超导镶嵌互连的电化学形成方法

    公开(公告)号：US06482656B1

    公开(公告)日：2002-11-19

    申请号：US09873667

    申请日：2001-06-04

    Applicant: Sergey Lopatin

    Inventor： Sergey Lopatin

    IPC: H01L2100

    CPC classification number: H01L21/76871 ,  H01L21/288 ,  H01L21/2885 ,  H01L21/76807 ,  H01L21/76843 ,  H01L21/76873 ,  H01L21/76877 ,  H01L21/76891 ,  H01L23/53285 ,  H01L39/2451 ,  H01L2924/0002 ,  Y10S505/742 ,  H01L2924/00

    Abstract: A semiconductor device including a damascene superconducting interconnect, formed of a Ba—Cu—Ca—O superconducting material. A method of forming a superconducting damascene interconnect structure, and the structure made thereby, the method including forming a cavity in an interlevel dielectric; forming a barrier layer in the cavity; forming a seed layer in the cavity over the barrier layer; forming a Cu—Ba alloy layer; filling the cavity by depositing a Cu—Ca—O film; and annealing in oxygen flow to form a Ba—Cu—Ca—O superconductor on the barrier layer. In an alternate embodiment, no barrier layer is formed.

    Abstract translation: 包括由Ba-Cu-Ca-O超导材料形成的镶嵌超导互连的半导体器件。 一种形成超导镶嵌互连结构的方法及其制造的结构，所述方法包括在层间电介质中形成空腔; 在空腔中形成阻挡层; 在阻挡层上的空腔中形成晶种层; 形成Cu-Ba合金层; 通过沉积Cu-Ca-O膜来填充空腔; 并在氧气流中退火以在阻挡层上形成Ba-Cu-Ca-O超导体。 在替代实施例中，不形成阻挡层。

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