Film forming method and film forming system
    2.
    发明授权
    Film forming method and film forming system 失效
    成膜方法和成膜系统

    公开(公告)号:US06656273B1

    公开(公告)日:2003-12-02

    申请号:US09593948

    申请日:2000-06-15

    IPC分类号: B05C914

    CPC分类号: H01L21/67178 H01L21/6715

    摘要: In an organic insulating film coating apparatus, an organic insulating film is applied onto a wafer by a spin coating. Thereafter, the wafer is subjected to heat processing and an inorganic insulating film is applied onto the wafer by a spin coating in an inorganic insulating film coating apparatus. After the coating of the inorganic insulating film, the wafer is subjected to aging processing and exchange-chemical coating processing. Thereafter, a solvent in the coating film is removed in a low-temperature heat processing apparatus and a low-oxygen and high-temperature heat processing apparatus, and thermal processing is performed for the wafer in a low-oxygen curing and cooling processing apparatus. The low-temperature heat processing apparatus, the low-oxygen and high-temperature heat processing apparatus, a delivery section for the wafer between the low-temperature heat processing apparatus and the low-oxygen and high-temperature heat processing apparatus, and a delivery section for the wafer between the low-oxygen and high-temperature heat processing apparatus and the low-oxygen curing and cooling processing apparatus are brought to low-oxygen atmospheres.

    摘要翻译: 在有机绝缘膜涂覆装置中,通过旋涂将有机绝缘膜施加到晶片上。 此后,对晶片进行热处理,并且通过无机绝缘膜涂覆设备中的旋涂将无机绝缘膜施加到晶片上。 在无机绝缘膜的涂覆之后,对晶片进行老化处理和交换化学涂覆处理。 然后,在低温热处理装置和低氧高温加热装置中除去涂膜中的溶剂,在低氧固化和冷却处理装置中对晶片进行热处理。 低温热处理装置,低氧高温加热装置,低温加热装置与低氧高温加热装置之间的晶片输送部,输送部 在低氧和高温热处理装置和低氧固化和冷却处理装置之间的晶片的截面被带到低氧气氛。