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公开(公告)号:US20240359288A1
公开(公告)日:2024-10-31
申请号:US18771492
申请日:2024-07-12
发明人: ChunHung CHEN , Jung-Yu LI , Sheng-Chen WANG , Shih-Sian HUANG
IPC分类号: B24B37/26 , B24B37/005 , B24B37/10 , B24B37/22 , B24B37/24 , B24B49/12 , B24B53/017
CPC分类号: B24B37/26 , B24B37/005 , B24B37/10 , B24B37/22 , B24B37/24 , B24B49/12 , B24B53/017
摘要: A method of using a polishing pad includes applying a slurry in a first region of the polishing pad. The method further includes spreading the slurry across the first region of the polishing pad at a first rate. The method further includes spreading the slurry across a second region at a second rate different from the first rate, wherein the second region is farther from a center of the polishing pad than the first region. The method further includes spreading the slurry across a third region at a third rate different from the second rate, wherein the second region is between the third region and the first region.
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公开(公告)号:US20240332037A1
公开(公告)日:2024-10-03
申请号:US18130407
申请日:2023-04-03
发明人: Brian J. BROWN
CPC分类号: H01L21/67046 , B08B1/12 , B08B1/32 , B08B1/50 , B08B3/02 , B08B3/08 , B24B53/017 , H01L21/02096
摘要: A chemical mechanical polishing (CMP) system include apparatus and methods to clean brushes used to scrub substrates, including brush cleaning using periodic chemical treatment. One or more embodiments include a method of operating the CMP system to rotate a first one or more scrubber brushes while the first one or more scrubber brushes are in contact with a first substrate, performing, concurrent with the rotating during the first time duration, a cleaning operation for a second one or more scrubber brushes, performing, during a second time duration of the cleaning cycle, the cleaning operation for the first one or more scrubber brushes, and rotating, concurrent with the performing the cleaning operation during the second time duration, the second one or more scrubber brushes while the second one or more scrubber brushes are in contact with a second substrate.
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公开(公告)号:US20240308028A1
公开(公告)日:2024-09-19
申请号:US18605311
申请日:2024-03-14
申请人: EBARA CORPORATION
IPC分类号: B24B57/02 , B24B53/017
CPC分类号: B24B57/02 , B24B53/017
摘要: A liquid supply device includes a swing arm capable of horizontally swinging above a polishing table, and a plurality of spray nozzles that is arranged in a longitudinal direction of the swing arm and sprays a cleaning fluid onto the polishing table, in which each of the plurality of spray nozzles has a slit-shaped fluid outlet, and a fluid outlet of the spray nozzle closer to a distal end of the swing arm is oriented to have a larger inclination angle with respect to a longitudinal direction of the swing arm in plan view.
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公开(公告)号:US20240173820A1
公开(公告)日:2024-05-30
申请号:US18214857
申请日:2023-06-27
发明人: Yeonsu Go , Donghoon Kwon
IPC分类号: B24B53/12 , B24B1/04 , B24B53/017
CPC分类号: B24B53/12 , B24B1/04 , B24B53/017
摘要: Provided is a conditioner including a conditioning arm on a polishing pad that is configured to chemically mechanically polish a substrate based on slurry, a conditioning disk on the conditioning arm that is configured to condition the polishing pad, a dilution solution injector on a first side of the conditioning arm and configured to inject a dilution solution to the slurry introduced into a space under the conditioning disk, and a sonicator on a second side of the conditioning arm and configured to apply an ultrasonic wave to debris generated from the polishing pad.
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公开(公告)号:US20240082881A1
公开(公告)日:2024-03-14
申请号:US18307526
申请日:2023-04-26
发明人: Donghoon KWON , Juhyun LEE , Chungki MIN
CPC分类号: B08B1/002 , B08B1/02 , B08B3/022 , B08B3/08 , B24B53/017 , H01L21/02065 , H01L21/02074 , H01L21/76819
摘要: A substrate cleaning device may include a first roll member and a second roll member including a copolymer of a first water-soluble polymer and a second water-soluble polymer. The first roll member may include a first roll body extending in a first direction and first protrusions on a surface of the first roll body. The second roll member may include a second roll body extending in the first direction and second protrusions on a surface of the second roll body.
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公开(公告)号:US11911871B2
公开(公告)日:2024-02-27
申请号:US16285605
申请日:2019-02-26
IPC分类号: B24B53/017 , B24B37/04 , B27N3/00 , H01L21/304 , H01L21/321 , H01L21/67
CPC分类号: B24B53/017 , B24B37/04 , B27N3/007 , H01L21/304 , H01L21/3212 , H01L21/67
摘要: A method of manufacturing a composite article includes providing a polishing pad; rubbing over the polishing pad to produce a polishing pad debris; collecting the polishing pad debris; providing a wood material; and applying a force over the wood material and the polishing pad debris to form the composite article, wherein the composite article includes the wood material and the polishing pad debris, and the rubbing of the polishing pad includes removing a portion of the polishing pad to produce the polishing pad debris.
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公开(公告)号:US20240033878A1
公开(公告)日:2024-02-01
申请号:US17874627
申请日:2022-07-27
发明人: Eric L. Lau , Huanbo Zhang , Zhize Zhu , Ekaterina A. Mikhaylichenko , Christopher HeungGyun Lee , Jeonghoon Oh
IPC分类号: B24B37/30 , B24B37/04 , B24B53/017
CPC分类号: B24B37/30 , B24B37/042 , B24B53/017
摘要: Exemplary polishing methods for chemical mechanical polishing may include engaging a substrate with a membrane of a substrate carrier. The methods may include chucking the substrate against a substantially planar surface defined by the substrate carrier. The chucking may reduce a bow in the substrate. The methods may include polishing one or more materials on the substrate for a first period of time. The methods may include disengaging the substrate from the substantially planar surface. The methods may include polishing the one or more materials on the substrate for a second period of time.
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公开(公告)号:US20240025008A1
公开(公告)日:2024-01-25
申请号:US18257492
申请日:2021-08-25
申请人: SUMCO CORPORATION
发明人: Masahiro MURAKAMI , Ryoya TERAKAWA
IPC分类号: B24B37/04 , B24B53/017
CPC分类号: B24B37/042 , B24B53/017
摘要: A method of polishing a silicon wafer, including a final polishing step including a pre-stage polishing step and a subsequent finish polishing step. The finish polishing step in the final polishing step includes a finish slurry polishing step using a polishing solution having an abrasive grain density of 1×1013/cm3 or more as the second polishing solution; and a pre-polishing step using a polishing solution having an abrasive grain density of 1×1010/cm3 or less as the second polishing solution, the pre-polishing step being performed prior to the finish slurry polishing step. A method of producing a silicon wafer, including the steps of: forming a notch portion on a periphery of a single crystal silicon ingot grown by the Czochralski process; slicing the ingot to obtain a silicon wafer; and subjecting the resulting silicon wafer to the above method of polishing a silicon wafer.
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公开(公告)号:US20230415304A1
公开(公告)日:2023-12-28
申请号:US18210107
申请日:2023-06-15
发明人: Donghoon Kwon , Boun Yoon
IPC分类号: B24B53/017
CPC分类号: B24B53/017
摘要: A substrate polishing apparatus includes a polishing pad including a magnetic material, a platen having an upper surface to which the polishing pad is attached, a slurry supply unit installed on the polishing pad, a conditioner installed on the polishing pad to be spaced apart from the slurry supply unit in the one direction and configured to fine-polish a surface of the polishing pad, a polishing head installed on the polishing pad to be spaced apart from the conditioner in the one direction and configured to rotate a polishing target, and a magnetic module installed on the polishing pad to be disposed between the conditioner and the polishing head in the one direction and configured to apply magnetic force to polishing pad debris to remove the polishing pad debris.
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公开(公告)号:US20230415303A1
公开(公告)日:2023-12-28
申请号:US18097540
申请日:2023-01-17
发明人: Donghoon Kwon , Boun Yoon
IPC分类号: B24B53/017 , B24B37/24
CPC分类号: B24B53/017 , B24B37/24
摘要: A polishing apparatus for a substrate, includes: a polishing pad having at least one region formed of a light-transmitting material; a platen on which the polishing pad is disposed on an upper surface thereof, having a groove portion in a region overlapping the polishing pad, and rotatably installed in one direction; a light source unit accommodated in the groove portion of the platen, and emitting light of a predetermined wavelength band to the one region of the polishing pad; a slurry supply unit supplying a slurry containing photocatalyst particles excited by the light of the predetermined wavelength band to the polishing pad; and a polishing head installed on the polishing pad to be spaced apart from the slurry supply unit in the one direction, and rotating a semiconductor substrate in close contact with the polishing pad.
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