APPARATUS AND METHOD OF BRUSH CLEANING USING PERIODIC CHEMICAL TREATMENTS

    公开(公告)号:US20240332037A1

    公开(公告)日:2024-10-03

    申请号:US18130407

    申请日:2023-04-03

    发明人: Brian J. BROWN

    摘要: A chemical mechanical polishing (CMP) system include apparatus and methods to clean brushes used to scrub substrates, including brush cleaning using periodic chemical treatment. One or more embodiments include a method of operating the CMP system to rotate a first one or more scrubber brushes while the first one or more scrubber brushes are in contact with a first substrate, performing, concurrent with the rotating during the first time duration, a cleaning operation for a second one or more scrubber brushes, performing, during a second time duration of the cleaning cycle, the cleaning operation for the first one or more scrubber brushes, and rotating, concurrent with the performing the cleaning operation during the second time duration, the second one or more scrubber brushes while the second one or more scrubber brushes are in contact with a second substrate.

    LIQUID SUPPLY DEVICE AND POLISHING DEVICE
    3.
    发明公开

    公开(公告)号:US20240308028A1

    公开(公告)日:2024-09-19

    申请号:US18605311

    申请日:2024-03-14

    申请人: EBARA CORPORATION

    IPC分类号: B24B57/02 B24B53/017

    CPC分类号: B24B57/02 B24B53/017

    摘要: A liquid supply device includes a swing arm capable of horizontally swinging above a polishing table, and a plurality of spray nozzles that is arranged in a longitudinal direction of the swing arm and sprays a cleaning fluid onto the polishing table, in which each of the plurality of spray nozzles has a slit-shaped fluid outlet, and a fluid outlet of the spray nozzle closer to a distal end of the swing arm is oriented to have a larger inclination angle with respect to a longitudinal direction of the swing arm in plan view.

    CONDITIONER AND CHEMICAL MECHANICAL POLISHING APPARATUS INCLUDING THE SAME

    公开(公告)号:US20240173820A1

    公开(公告)日:2024-05-30

    申请号:US18214857

    申请日:2023-06-27

    IPC分类号: B24B53/12 B24B1/04 B24B53/017

    CPC分类号: B24B53/12 B24B1/04 B24B53/017

    摘要: Provided is a conditioner including a conditioning arm on a polishing pad that is configured to chemically mechanically polish a substrate based on slurry, a conditioning disk on the conditioning arm that is configured to condition the polishing pad, a dilution solution injector on a first side of the conditioning arm and configured to inject a dilution solution to the slurry introduced into a space under the conditioning disk, and a sonicator on a second side of the conditioning arm and configured to apply an ultrasonic wave to debris generated from the polishing pad.

    METHOD OF POLISHING SILICON WAFER AND METHOD OF PRODUCING SILICON WAFER

    公开(公告)号:US20240025008A1

    公开(公告)日:2024-01-25

    申请号:US18257492

    申请日:2021-08-25

    申请人: SUMCO CORPORATION

    IPC分类号: B24B37/04 B24B53/017

    CPC分类号: B24B37/042 B24B53/017

    摘要: A method of polishing a silicon wafer, including a final polishing step including a pre-stage polishing step and a subsequent finish polishing step. The finish polishing step in the final polishing step includes a finish slurry polishing step using a polishing solution having an abrasive grain density of 1×1013/cm3 or more as the second polishing solution; and a pre-polishing step using a polishing solution having an abrasive grain density of 1×1010/cm3 or less as the second polishing solution, the pre-polishing step being performed prior to the finish slurry polishing step. A method of producing a silicon wafer, including the steps of: forming a notch portion on a periphery of a single crystal silicon ingot grown by the Czochralski process; slicing the ingot to obtain a silicon wafer; and subjecting the resulting silicon wafer to the above method of polishing a silicon wafer.

    SUBSTRATE POLISHING APPARATUS AND METHOD OF POLISHING SUBSTRATE USING THE SAME

    公开(公告)号:US20230415304A1

    公开(公告)日:2023-12-28

    申请号:US18210107

    申请日:2023-06-15

    IPC分类号: B24B53/017

    CPC分类号: B24B53/017

    摘要: A substrate polishing apparatus includes a polishing pad including a magnetic material, a platen having an upper surface to which the polishing pad is attached, a slurry supply unit installed on the polishing pad, a conditioner installed on the polishing pad to be spaced apart from the slurry supply unit in the one direction and configured to fine-polish a surface of the polishing pad, a polishing head installed on the polishing pad to be spaced apart from the conditioner in the one direction and configured to rotate a polishing target, and a magnetic module installed on the polishing pad to be disposed between the conditioner and the polishing head in the one direction and configured to apply magnetic force to polishing pad debris to remove the polishing pad debris.

    POLISHING APPARATUS FOR A SUBSTRATE AND POLISHING METHOD FOR A SUBSTRATE USING THE SAME

    公开(公告)号:US20230415303A1

    公开(公告)日:2023-12-28

    申请号:US18097540

    申请日:2023-01-17

    IPC分类号: B24B53/017 B24B37/24

    CPC分类号: B24B53/017 B24B37/24

    摘要: A polishing apparatus for a substrate, includes: a polishing pad having at least one region formed of a light-transmitting material; a platen on which the polishing pad is disposed on an upper surface thereof, having a groove portion in a region overlapping the polishing pad, and rotatably installed in one direction; a light source unit accommodated in the groove portion of the platen, and emitting light of a predetermined wavelength band to the one region of the polishing pad; a slurry supply unit supplying a slurry containing photocatalyst particles excited by the light of the predetermined wavelength band to the polishing pad; and a polishing head installed on the polishing pad to be spaced apart from the slurry supply unit in the one direction, and rotating a semiconductor substrate in close contact with the polishing pad.