公开(公告)号：US08349201B2

公开(公告)日：2013-01-08

申请号：US12762966

申请日：2010-04-19

申请人： Chung-Mo Yang ,  Jae-Woo Joung ,  Young-Seuck Yoo

发明人： Chung-Mo Yang ,  Jae-Woo Joung ,  Young-Seuck Yoo

IPC分类号： B44C15/00

CPC分类号： B41J2/1603 ,  B41J2/1628 ,  B41J2/1631

摘要： A method of processing a SOI substrate to form a groove in the SOI substrate in which a silicon layer is stacked on both sides of an oxide layer is disclosed. In accordance with an embodiment of the present invention, the method includes dividing a portion of the silicon layer, in which the groove is to be processed, into a plurality of unit portions, performing dry etching on certain portions of the plurality of divided unit portions such that the oxide layer is exposed and removing remaining portions of the plurality of divided unit portions by removing the oxide layer.

摘要翻译： 公开了一种处理SOI衬底以在SOI衬底中形成沟槽的方法，其中硅层堆叠在氧化物层的两侧。 根据本发明的一个实施例，该方法包括将要处理的槽的硅层的一部分分成多个单元部分，对多个分割单元部分的某些部分进行干蚀刻 使得氧化物层被暴露并通过去除氧化物层去除多个分割单元部分的剩余部分。