公开(公告)号：US11746014B2

公开(公告)日：2023-09-05

申请号：US17414451

申请日：2020-11-20

Applicant: IDEMITSU KOSAN CO., LTD.

Inventor： Yusuke Iseki ,  Nobuhito Nakaya

IPC: H01M10/0525 ,  H01M10/0562 ,  C01B17/20 ,  H01B1/10

CPC classification number: C01B17/20 ,  H01B1/10 ,  H01M10/0525 ,  H01M10/0562 ,  C01P2006/40 ,  H01M2300/0068

Abstract: Disclosed is a method for producing a sulfide solid electrolyte including a step of processing a slurry by at least one treatment selected from drying and heating, wherein a solid electrolyte raw material containing a lithium element, a sulfur element, a phosphorus element and a halogen element, and a complexing agent are mixed in a reactor to give a complex slurry containing a complex formed of the solid electrolyte raw material and the complexing agent, and the complex slurry is transferred into an intermediate tank equipped with a cooling device and cooled therein.

公开(公告)号：US20220336853A1

公开(公告)日：2022-10-20

申请号：US17766120

申请日：2020-08-18

Applicant: FURUKAWA CO., LTD.

Inventor： Tatsushi Yoshida

IPC: H01M10/0562 ,  C01B17/20 ,  C01B17/22

Abstract: The method of manufacturing a sulfide-based inorganic solid electrolyte material, including: (A) preparing a sulfide-based inorganic solid electrolyte material in a vitreous state; and (B) annealing the sulfide-based inorganic solid electrolyte material in the vitreous state using a heating unit. Step (B) includes a step (B1) of disposing the sulfide-based inorganic solid electrolyte material in the vitreous state in a heating space, a step (B2) of annealing the sulfide-based inorganic solid electrolyte material in the vitreous state disposed in the heating space while increasing a temperature of the heating unit from an initial temperature T0 to an annealing temperature T1, and a step (B3) of annealing the sulfide-based inorganic solid electrolyte material in the vitreous state disposed in the heating space at the annealing temperature T1, and a temperature increase rate from the initial temperature T0 to the annealing temperature T1 in the step (B2) is 2° C./min or higher.

公开(公告)号：US20210047561A1

公开(公告)日：2021-02-18

申请号：US17084443

申请日：2020-10-29

Applicant: Nanoco Technologies Ltd.

Inventor： Steven Daniels

IPC: C09K11/68 ,  C09K11/02 ,  C07C211/08 ,  B82Y20/00 ,  C07F11/00 ,  C01B19/00 ,  C07C211/03 ,  C01B17/20 ,  C07C211/21 ,  C01G39/06

Abstract: Methods of synthesizing transition metal dichalcogenide nanoparticles include forming a metal-amine complex, combining the metal-amine complex with a chalcogen source in at least one solvent to form a solution, heating the solution to a first temperature for a first period of time, and heating the solution to a second temperature that is higher than the first temperature for a second period of time.

公开(公告)号：US10808169B2

公开(公告)日：2020-10-20

申请号：US15644984

申请日：2017-07-10

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jeong Hee Lee ,  Hyun A Kang ,  Eun Joo Jang ,  Sang Eui Lee ,  Shin Ae Jun ,  Oul Cho ,  Tae Gon Kim ,  Tae Hyung Kim

IPC: C09K11/02 ,  G02F1/1335 ,  C09K11/59 ,  C01B17/20 ,  C08L33/04 ,  G02F1/361 ,  B24B1/00

Abstract: A method of grinding a semiconductor nanocrystal-polymer composite, the method including obtaining a semiconductor nanocrystal-polymer composite including a semiconductor nanocrystal and a first polymer, contacting the semiconductor nanocrystal-polymer composite with an inert organic solvent; and grinding the semiconductor nanocrystal-polymer composite in the presence of the inert organic solvent to grind the semiconductor nanocrystal-polymer composite.

公开(公告)号：US10752514B2

公开(公告)日：2020-08-25

申请号：US14426281

申请日：2013-09-09

Applicant: CORNELL UNIVERSITY

Inventor： Haitao Zhang ,  Richard D. Robinson

IPC: C09K11/74 ,  C09K11/58 ,  B82Y30/00 ,  C01G45/00 ,  C01G19/00 ,  C01G29/00 ,  C01G3/12 ,  C01G5/00 ,  C01G9/08 ,  C01G49/12 ,  C30B29/46 ,  C30B29/50 ,  C30B7/14 ,  C01B19/00 ,  C09K11/56 ,  C01B17/20 ,  C30B29/60 ,  C01G11/02

Abstract: A method for synthesizing a metal chalcogenide nanocrystal (NC) material includes reacting a metal material and an ammonium chalcogenide material in an organic solvent material. The method provides that the metal chalcogenide nanocrystal material may be synthesized by a heating-up method at large scale (i.e., greater than 30 grams). Ammonium chalcogenide salts exhibit high reactivity and metal chalcogenide nanocrystals can be synthesized at low temperatures (i.e., less than 200° C.) with high conversion yields (i.e., greater than 90 percent).

公开(公告)号：US10711188B2

公开(公告)日：2020-07-14

申请号：US15711180

申请日：2017-09-21

Applicant: Raytheon Company

Inventor： Stephanie J. Lin ,  James R. Chow ,  Kalin Spariosu

IPC: C09K11/66 ,  H01L33/50 ,  F21K9/64 ,  F21V7/22 ,  C09K11/54 ,  C09K11/88 ,  C09K11/02 ,  C01B17/20 ,  C01B19/00 ,  C09K11/56 ,  C01G21/21 ,  H01L31/0352 ,  B82Y20/00 ,  F21Y115/10 ,  B82Y40/00

Abstract: In certain embodiments, a first semiconductor material is vaporized to generate a vapor phase condensate. The vapor phase condensate is allowed to form nanoparticles. The nanoparticles are annealed to yield nanoparticles or cores. The cores are overcoated by introducing a solution containing second semiconductor material precursors in a coordinating solvent into a suspension of cores at a desired elevated temperature and mixing for a period of time sufficient to cause diffusion of the shell into the core. The diffusion of the shell into the core causes the quantum dots to exhibit a broadened optical emission. The produced quantum dots may be incorporated into a quantum dot based radiation source.

公开(公告)号：US10454100B2

公开(公告)日：2019-10-22

申请号：US15311184

申请日：2015-05-14

Applicant: AGENCY FOR SCIENCE, TECHNOLOGY AND RESEARCH

Inventor： Ning Ding ,  Yanwei Lum ,  Tzi Sum Andy Hor ,  Zhao Lin Liu ,  Yun Zong

IPC: H01M4/36 ,  H01M4/62 ,  H01M4/58 ,  B01J13/08 ,  B01J13/20 ,  C01B17/20 ,  C01G9/08 ,  C01G1/12

Abstract: There is provided a method of forming a porous particle comprising an electrically conductive continuous shell encapsulating a core, said core comprising an elemental compound that reversibly reduces in the presence of a cation and oxidizes in the absence of said cation, said method comprising the steps of: a) encapsulating an elemental compound precursor with said electrically conductive shell; b) reacting said elemental compound precursor with an oxidation agent to oxidize said elemental compound precursor to form said elemental compound, thereby forming said electrically conductive shell encapsulating said core comprising said elemental compound.

公开(公告)号：US10399148B2

公开(公告)日：2019-09-03

申请号：US15739536

申请日：2016-06-24

Applicant: Korea University Research and Business Foundation

Inventor： Yun-Mo Sung ,  Ki-Hyun Cho

IPC: C01G21/00 ,  C01G21/21 ,  B22F9/24 ,  B22F1/00 ,  C01B17/20 ,  C01B19/00 ,  C04B35/626 ,  C04B35/628

Abstract: The present invention relates to a method for preparing a phase-separated lead telluride-lead sulfide nanopowder using solution synthesis and a phase-separated lead telluride-lead sulfide nanopowder prepared by the method. The method includes: (a) mixing tellurium and a first solvent, followed by ultrasonic irradiation to prepare a tellurium precursor solution; (b) mixing an organosulfur compound and a second solvent, followed by ultrasonic irradiation to prepare a sulfur precursor solution; (c) mixing lead oxide, a third solvent, and a fourth solvent and heating the mixture to prepare a lead precursor solution; (d) adding the tellurium precursor solution to the lead precursor solution and allowing the mixture to react; (e) adding the sulfur precursor solution to the reaction mixture of step (d) and allowing the resulting mixture to react; and (f) cooling the reaction mixture of step (e) to room temperature to prepare a phase-separated lead telluride-lead sulfide nanopowder.

公开(公告)号：US10309011B2

公开(公告)日：2019-06-04

申请号：US15562545

申请日：2016-07-28

Applicant: KOREA RESEARCH INSTITUTE OF STANDARDS AND SCIENCE

Inventor： Sang Woo Kang ,  Ji Hun Mun

IPC: C01B17/20 ,  C01G39/06 ,  C23C16/02 ,  C23C16/30 ,  C23C16/52 ,  C30B25/16 ,  C30B25/18 ,  C30B29/46 ,  C30B29/64 ,  C23C16/455

Abstract: The present invention relates to a method for preparing a two-dimensional transition metal dichalcogenide and, more particularly, to a method for preparing a highly uniform two-dimensional transition metal dichalcogenide thin film. More specifically, the present invention is directed to a preparation method for a highly uniform two-dimensional transition metal dichalcogenide thin film at low temperature of 500° C. or below.

公开(公告)号：US10242761B2

公开(公告)日：2019-03-26

申请号：US14781011

申请日：2014-03-25

Applicant: ATOMIC ENERGY OF CANADA LIMITED

Inventor： Nicolas Guerin ,  Xiongxin Dai

IPC: G21G4/04 ,  C01B17/20 ,  C01G3/00 ,  C01G99/00 ,  G21G1/00

Abstract: A method for preparing alpha sources of polonium. A sample of polonium is provided in a solution. A controlled amount of sulfide and a controlled amount of a metal capable of forming an insoluble sulfide salt in the solution are introduced into the solution, in order to co-precipitate polonium from the solution. The precipitates are filtered out.