Method of scrubbing sulfur dioxide from waste gas to product potassium thiosulfate

    公开(公告)号:US11214490B1

    公开(公告)日:2022-01-04

    申请号:US17324230

    申请日:2021-05-19

    摘要: A method of wet-scrubbing a waste gas containing sulfur dioxide (SO2) to produce potassium thiosulfate. The wet-scrubbing facility includes multiple horizontally disposed stages where a preceding stage passes partially-scrubbed waste gas to a succeeding stage. Each stage has a scrubber mechanism to scrub waste gas with circulating fluid that progressively reduces SO2 in the waste gas before atmospheric discharge. The scrubber mechanism may optionally include a packing material to facilitate absorption of SO2 by the fluid, a sump disposed at the output of the stage to receive fluid as it drains from the packing, and a circulation pump to circulate fluid from the sump to its packing and to cascade at least a portion of the fluid back to a preceding stage. A portion of the fluid is extracted and reacted in a reaction vessel with a cation to produce potassium thiosulfate.

    Crossflow scrubbing method and apparatus to produce a product such as potassium thiosulfate or ammonium thiosulfate

    公开(公告)号:US11214489B1

    公开(公告)日:2022-01-04

    申请号:US17106090

    申请日:2020-11-28

    摘要: A method and a facility for wet-scrubbing sulfur dioxide to produce, for example, potassium thiosulfate or ammonium thiosulfate. The facility includes a multi-section vessel having multiple horizontally disposed stages where a preceding stage passes partially-scrubbed waste gas to a succeeding stage. Each stage has a scrubber mechanism to scrub waste gas with circulating fluid that successively reduces waste gas concentration before atmospheric discharge. The scrubber mechanism may include a packing to facilitate absorption of waste gas by the fluid, a sump disposed at the output of the stage to receive fluid as it drains from the packing, and a circulation pump to circulate fluid from the sump to its packing and to cascade at least a portion of the fluid back to a preceding stage. A portion of the fluid is extracted from the facility and reacted in a reaction vessel with a cation to produce ammonium thiosulfate or potassium thiosulfate.

    PROCESS FOR TREATING A MIXED FEED OF HYDROGEN SULFIDE GAS AND AMMONIA GAS TO PRODUCE AMMONIUM THIOSULFATE AND INCLUDING METHODOLOGY FOR EMISSIONS CONTROL

    公开(公告)号:US20210331923A1

    公开(公告)日:2021-10-28

    申请号:US17235735

    申请日:2021-04-20

    IPC分类号: C01B17/64

    摘要: This invention relates to production of an aqueous solution containing ammonium thiosulfate from a feed gas containing hydrogen sulfide (H2S) and ammonia (NH3). Sufficient separation of feed gas H2S from NH3 is achieved by controlling individual NH3 and H2S absorption mass-transfer rates in a single co-current stage, whereby a first gas contacts a first liquid containing ammonium bisulfite (ABS). Substantially more NH3 is absorbed than H2S, converting ABS to diammonium sulfite (DAS). A portion of DAS reacts with a sufficiently small portion of H2S to produce ATS and leaves as a second liquid stream. A larger portion of H2S leaves as a second gas stream. The second gas stream is oxidized to sulfur dioxide (SO2) comprising a third gas stream. The third gas stream contacts the second aqueous stream in a second contact stage whereby DAS in the second liquid stream is converted to ABS and returned to the first contacting zone.

    METHODS FOR TREATING SULFIDES IN GASEOUS STREAMS

    公开(公告)号:US20200140298A1

    公开(公告)日:2020-05-07

    申请号:US16733436

    申请日:2020-01-03

    申请人: BILL ARCHER, LLC

    摘要: A method for removing hydrogen sulfide from a biogas, wherein the hydrogen sulfide is absorbed in an aqueous liquid to produce a cleaned gas having a reduced amount of hydrogen sulfide relative to the biogas. The aqueous liquid is subsequently treated by contacting with a sulfur dye or sulfurized vat dye in the presence of an oxidizer such as oxygen gas, to convert the sulfides in the aqueous liquid to a non-toxic, water-soluble, product.

    Sulfur dioxide scrubbing system and process for producing potassium products

    公开(公告)号:US10472238B2

    公开(公告)日:2019-11-12

    申请号:US15974479

    申请日:2018-05-08

    摘要: The invention relates to a process for preparing potassium thiosulfate, potassium sulfite or potassium bisulfite comprising the following steps: Step (1a): providing a potassium hydroxide or potassium carbonate solution for neutralizing acid forming components such as dissolving SO2 or H2S; Step (1b): providing an SO2 contacting solution, containing at least some potassium sulfite or potassium bisulfite or potassium thiosulfate; Step (2): providing SO2 gas; Step (3): reacting these to absorb the SO2 gas and to form an intermediate reaction mixture comprising potassium sulfite, or potassium bisulfite or a mixture thereof, and optionally recovering the potassium sulfite, or potassium bisulfite or a mixture thereof, and/or optionally using steps 4 and 5; Step (4): adding sulfur or sulfide containing compound containing sulfur having the oxidation state of 0, −2 or of between 0 and −2 to the reaction mixture and optionally potassium hydroxide or potassium carbonate, and reacting the mixture under suitable conditions to form potassium thiosulfate; and Step (5): recovering the potassium thiosulfate, and optionally concentrating the potassium thiosulfate.

    Method for making devices having dielectric layers with thiosulfate-containing polymers

    公开(公告)号:US10374178B2

    公开(公告)日:2019-08-06

    申请号:US15488572

    申请日:2017-04-17

    摘要: A semiconductor device can be prepared using a precursor dielectric composition that comprises: (1) a photochemically or thermally crosslinked product of a photocurable or thermally curable thiosulfate-containing polymer that has a Tg of at least 50° C. and that comprises: an organic polymer backbone comprising (a) recurring units comprising pendant thiosulfate groups; and further comprises charge balancing cations, and (2) optionally, an electron-accepting photo sensitizer component. The electronic device can be prepared by independently applying the precursor dielectric composition and an organic semiconductor composition to a substrate to form an applied precursor dielectric composition and an applied organic semiconductor composition, respectively, and subjecting the applied precursor dielectric composition to curing conditions to form a gate dielectric layer that is in physical contact with the applied organic semiconductor composition.