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    Large area group III nitride crystals and substrates, methods of making, and methods of use
    2.
    发明授权
    Large area group III nitride crystals and substrates, methods of making, and methods of use 有权

    公开(公告)号：US12000063B2

    公开(公告)日：2024-06-04

    申请号：US17173170

    申请日：2021-02-10

    申请人： SLT Technologies, Inc

    发明人： Drew W. Cardwell ,  Mark P. D'Evelyn

    IPC分类号： C30B29/40 ,  C01B21/06 ,  C30B25/04 ,  C30B25/18

    CPC分类号： C30B25/18 ,  C01B21/0632 ,  C30B25/04 ,  C30B29/406

    摘要： Embodiments of the present disclosure include techniques related to techniques for processing materials for manufacture of group-III metal nitride and gallium based substrates. More specifically, embodiments of the disclosure include techniques for growing large area substrates using a combination of processing techniques. Merely by way of example, the disclosure can be applied to growing crystals of GaN, AlN, InN, InGaN, AlGaN, and AlInGaN, and others for manufacture of bulk or patterned substrates. Such bulk or patterned substrates can be used for a variety of applications including optoelectronic and electronic devices, lasers, light emitting diodes, solar cells, photo electrochemical water splitting and hydrogen generation, photodetectors, integrated circuits, and transistors, and others.

    IRON-RICH PERMANENT MAGNET
    3.
    发明公开
    IRON-RICH PERMANENT MAGNET 审中-公开

    公开(公告)号：US20240112855A1

    公开(公告)日：2024-04-04

    申请号：US18529331

    申请日：2023-12-05

    申请人： REGENTS OF THE UNIVERSITY OF MINNESOTA

    发明人： Jian-Ping WANG ,  Md MEHEDI ,  YanFeng JIANG ,  Bin MA ,  Delin ZHANG ,  Fan ZHANG ,  Jinming LIU

    IPC分类号： H01F41/02 ,  C01B21/06 ,  H01F1/10

    CPC分类号： H01F41/0253 ,  C01B21/0622 ,  H01F1/10 ,  H01F1/03

    摘要： The disclosure is directed to an iron-nitride material having a polycrystalline microstructure including a plurality of elongated crystallographic grains with grain boundaries, the iron-nitride material including at least one of an α″-Fe16N2 phase and a body-center-tetragonal (bct) phase comprising Fe and N. The disclosure is also directed a method producing an iron-nitride material. The method includes some combinations of preparing a raw material comprising iron, carrying out a microstructure build-up by annealing the prepared raw material at an elevated temperature and subsequently quenching the prepared raw material to produce a microstructure build-up material, annealing the microstructure build-up material, reducing the microstructure build-up material in a hydrogen environment, nitriding the reduced material to produce a nitrided material and subsequently quenching the nitrided material to a martensitic transformation temperature, stress annealing the nitrided material, and magnetic field annealing the stress-annealed material.