公开(公告)号：US20230339755A1

公开(公告)日：2023-10-26

申请号：US18080016

申请日：2022-12-13

申请人： ZONE INFINITY CO., LTD.

发明人： In Chul CHO

IPC分类号： C01B21/068

CPC分类号： C01B21/0682 ,  C01P2004/03 ,  C01P2004/61

摘要： A synthesis method of silicon nitride powder including preparing mixed powder having a particle size of 8 to 10 µm which includes 69 to 98 wt% of silicon powder, 1 to 30 wt% of α-phase silicon nitride powder, and 1 to 10 wt% of silicon dioxide powder; performing heat treatment on the mixed powder in a nitrogen gas atmosphere of 0.85 to 1 atm at a temperature of 1,450 to 1,750° C. for 5 to 20 hours; and cooling the mixed powder gradually to obtain silicon nitride powder,; and performing pressure sintering on a silicon nitride sintered body by filling the mixed powder into a mold and then keeping the mixed powder at a temperature of 1,750 to 1,850° C. for 2 to 6 hours while pressure of 150 to 300 kg/cm2 is applied thereto in a nitrogen gas atmosphere of 0.85 to 1 atm.

公开(公告)号：US11749522B2

公开(公告)日：2023-09-05

申请号：US17572509

申请日：2022-01-10

申请人： DNF CO., LTD.

发明人： Sung Gi Kim ,  Jeong Joo Park ,  Joong Jin Park ,  Se Jin Jang ,  Byeong-Il Yang ,  Sang-Do Lee ,  Sam Dong Lee ,  Sang Ick Lee ,  Myong Woon Kim

IPC分类号： H01L21/02 ,  C23C16/32 ,  C01B33/18 ,  C01B21/068 ,  C07F7/10 ,  C23C16/455 ,  C23C16/50 ,  C23C16/40 ,  C23C16/34 ,  C23C16/30 ,  C23C16/36 ,  C09D1/00

CPC分类号： H01L21/02208 ,  C01B21/068 ,  C01B33/183 ,  C07F7/10 ,  C09D1/00 ,  C23C16/308 ,  C23C16/325 ,  C23C16/345 ,  C23C16/36 ,  C23C16/401 ,  C23C16/4554 ,  C23C16/50 ,  H01L21/0214 ,  H01L21/0217 ,  H01L21/0228 ,  H01L21/02126 ,  H01L21/02164 ,  H01L21/02167 ,  H01L21/02271 ,  H01L21/02274

摘要： Provided are a composition for depositing a silicon-containing thin film containing a bis(aminosilyl)alkylamine compound and a method for manufacturing a silicon-containing thin film using the same, and more particularly, a composition for depositing a silicon-containing thin film, containing the bis(aminosilyl)alkylamine compound capable of being usefully used as a precursor of the silicon-containing thin film, and a method for manufacturing a silicon-containing thin film using the same.

公开(公告)号：US20230274992A1

公开(公告)日：2023-08-31

申请号：US18170170

申请日：2023-02-16

申请人： Proterial, Ltd.

发明人： Kazufumi Suenaga ,  Rei Fukumoto ,  Youichiro Kaga

IPC分类号： H01L23/14 ,  C01B21/068 ,  H01L21/66

CPC分类号： H01L23/147 ,  C01B21/0682 ,  H01L22/12 ,  C01P2002/82 ,  C01P2006/32 ,  H01L23/3736

摘要： A silicon nitride substrate including a first surface, and a second surface disposed opposite the first surface. One of the first surface or the second surface is a measurement surface. On the measurement surface, a value of an average full-width-at-half-maximum (FWHM) Cave is broader than 0 cm−1 and narrower than 5.32 cm−1 as measured by using a following measurement method. The measurement method of the average full-width-at-half-maximum (FWHM) Cave: one central point and four edge portions on the measurement surface are determined as measurement points; a Raman spectrum is measured at each of the measurement points; a full-width-at-half-maximum (FWHM) C of a spectral peak having the maximum strength within a range from 850 cm−1 or greater to 875 cm−1 or less is calculated in each Raman spectrum; and an average value of thus calculated full-width-at-half-maximum (FWHM)s C is the average full-width-at-half-maximum (FWHM) Cave.

公开(公告)号：US20230099133A1

公开(公告)日：2023-03-30

申请号：US18062681

申请日：2022-12-07

申请人： SINTX Technologies, Inc.

发明人： Bryan J. McEntire ,  Ryan M. Bock ,  Bhajanjit Singh Bal

IPC分类号： C01B21/068 ,  A01C1/06 ,  A01N59/02 ,  A01N25/32

摘要： Disclosed herein are compositions, devices and methods for inactivating viruses, bacteria, and fungi. The compositions, methods, and devices may include coatings or slurries such as silicon nitride powder coatings or slurries for the inactivation of viruses, bacteria, and/or fungi.

公开(公告)号：US20230002229A1

公开(公告)日：2023-01-05

申请号：US17781489

申请日：2020-12-02

申请人： TOKUYAMA CORPORATION

发明人： Satoru WAKAMATSU ,  Koji AKIMOTO

IPC分类号： C01B21/068

摘要： The present invention relates to a method for producing a metal nitride, which is a method for synthesizing a metal nitride by igniting a raw material powder containing a metal powder housed in a reaction vessel (2) under a nitrogen atmosphere and propagating nitriding combustion heat of the metal powder to the whole of the housed raw material powder, characterized in that the raw material powder is housed in the reaction vessel (2) as a molded body (1B) having a void ratio of 40 to 70%. According to the present invention, it is possible to provide a method for producing a metal nitride capable of suppressing the occurrence of powder scattering and improving the recovery rate of the metal nitride.

公开(公告)号：US20220280907A1

公开(公告)日：2022-09-08

申请号：US17540229

申请日：2021-12-01

申请人： Kunming University of Science and Technology

发明人： Lei Xu ,  Libo Zhang ,  Hang Li ,  Zhaohui Han ,  Jianhua Liu ,  Hongying Xia ,  Zhimeng Tang ,  Lirong Guo

IPC分类号： B01J19/18 ,  C01B21/068 ,  B01J4/00 ,  B01J19/00 ,  B01J8/00

摘要： A device for rapidly preparing β-Si3N4 by gas-solid reaction and a method thereof, and relates to the technical field of recycling and reuse of waste fine silicon powder. The bottom of a stock bin communicates with a first opening and closing passage, a first connection passage, and the top of a first transitional bin; the bottom of the first transitional bin communicates with the first opening and closing passage, a second connection passage, and the top of a reaction bin; the bottom of the reaction bin communicates with a second opening and closing passage, the first connection passage, and the top of a second transitional bin; the bottom of the second transitional bin communicates with the top of a conveying passage through the first opening and closing passage; a material outlet of the conveying bin communicates with the collection bin.

公开(公告)号：US11434252B2

公开(公告)日：2022-09-06

申请号：US16572451

申请日：2019-09-16

申请人： Gelest, Inc.

发明人： Barry C. Arkles ,  Youlin Pan ,  Fernando Jove

IPC分类号： C07F7/10 ,  C07F7/08 ,  H01L21/02 ,  C01B21/068 ,  C01B21/082

摘要： Hydridosilapyrroles and hydridosilaazapyrrole are a new class of heterocyclic compounds having a silicon bound to carbon and nitrogen atoms within the ring system and one or two hydrogen atoms on the silicon atom. The compounds have formula (I): in which R is a substituted or unsubstituted organic group and R′ is an alkyl group. These compounds react with a variety of organic and inorganic hydroxyl groups by a ring-opening reaction and may be used to produce silicon nitride or silicon carbonitride films.

公开(公告)号：US10974996B2

公开(公告)日：2021-04-13

申请号：US16255776

申请日：2019-01-23

申请人： The Government of the United States of America, as represented by the Secretary of the Navy

发明人： Matthew Laskoski ,  Boris Dyatkin ,  Teddy M. Keller

IPC分类号： C04B35/64 ,  C04B35/58 ,  C04B35/583 ,  C04B35/584 ,  C04B35/626 ,  C04B35/76 ,  C04B35/80 ,  C04B35/83 ,  C01B21/076 ,  C01B21/06 ,  C04B35/591 ,  C04B35/524 ,  C01B21/068 ,  C01B21/064

摘要： Disclosed is a composition having nanoparticles or particles of a refractory metal, a refractory metal hydride, a refractory metal carbide, a refractory metal nitride, or a refractory metal boride, an organic compound consisting of carbon and hydrogen, and a nitrogenous compound consisting of carbon, nitrogen, and hydrogen. The composition, optionally containing the nitrogenous compound, is milled, cured to form a thermoset, compacted into a geometric shape, and heated in a nitrogen atmosphere at a temperature that forms a nanoparticle composition comprising nanoparticles of metal nitride and optionally metal carbide. The nanoparticles have a uniform distribution of the nitride or carbide.

公开(公告)号：US10804095B2

公开(公告)日：2020-10-13

申请号：US16163170

申请日：2018-10-17

申请人： Samsung SDI Co., Ltd.

发明人： Jin-Hee Bae ,  Taeksoo Kwak ,  Byeonggyu Hwang ,  Kunbae Noh ,  Jun Sakong ,  Jinwoo Seo ,  Junyoung Jang

IPC分类号： H01L21/02 ,  C01B21/068 ,  C09D183/16 ,  C08G77/62

摘要： A composition for forming a silica layer includes a silicon-containing polymer and a solvent, the composition having a SiO2 conversion rate of greater than about 0 and less than or equal to about 15. The SiO2 conversion rate is represented by: SiO2 conversion rate=(a ratio of an area of Si—O to an area of Si—H measured after coating the composition in a thickness of 6700 Å on a bare wafer, and allowing the coated wafer to stand for 24 hours under conditions of a temperature of 85° C. and a relative humidity of 85%)−(a ratio of an area of Si—O to an area of Si—H measured after coating the composition in a thickness of 6700 Å on a bare wafer, and allowing the coated wafer to stand for 2 hours under conditions of a temperature of 85° C. and a relative humidity of 85%).

公开(公告)号：US10752778B2

公开(公告)日：2020-08-25

申请号：US16045712

申请日：2018-07-25

申请人： FUJIFILM Corporation

发明人： Keita Takahashi

IPC分类号： C08L101/00 ,  C08K9/04 ,  C08G65/22 ,  C01B21/064 ,  C01B21/072 ,  C08L63/00 ,  C08G65/18 ,  C01B21/068 ,  C09K5/14 ,  C08K5/1515 ,  C08K5/55 ,  C08K3/28 ,  C08J5/18 ,  C08K3/22 ,  C08K5/14 ,  C08K3/38

摘要： According to the present invention, there are provided a resin composition containing a surface-modified inorganic substance, which is obtained by performing surface modification on an inorganic nitride or an inorganic oxide by using a boronic acid compound, and an epoxy compound, a thermally conductive material including a cured substance of the resin composition, and a device including the thermally conductive material. The boronic acid compound has, for example, an amino group, a thiol group, a hydroxyl group, an isocyanate group, a carboxyl group, or a carboxylic acid anhydride group. By using the resin composition of the present invention, it is possible to provide a thermally conductive material having excellent thermal conductivity and a device having high durability.