公开(公告)号：US12053073B2

公开(公告)日：2024-08-06

申请号：US16980289

申请日：2019-04-09

申请人： LG CHEM, LTD.

发明人： Pilsung Jo ,  Jin Suk Song ,  Sangcholl Han ,  Ki Hwan Kim ,  Yong Chan Kim ,  Nansra Heo ,  Jeong Woo Shon

IPC分类号： B44F1/08 ,  A45D33/18 ,  A45D34/00 ,  A45D40/00 ,  B29C45/00 ,  B29C45/26 ,  B32B3/30 ,  B32B7/023 ,  B32B15/08 ,  B32B27/06 ,  B44F1/02 ,  C01B21/082 ,  C08J7/04 ,  G02B5/00 ,  G02B5/22 ,  B29C45/16 ,  B29K101/00 ,  B65D1/02 ,  C23C14/00

CPC分类号： A45D33/18 ,  A45D34/00 ,  A45D40/00 ,  B29C45/0001 ,  B29C45/26 ,  B32B3/30 ,  B32B7/023 ,  B32B15/08 ,  B32B27/06 ,  B44F1/02 ,  B44F1/08 ,  C01B21/0825 ,  C08J7/0423 ,  G02B5/003 ,  G02B5/223 ,  A45D2034/007 ,  A45D2040/0012 ,  A45D2200/053 ,  B29C45/1679 ,  B29K2101/00 ,  B29K2901/12 ,  B29K2995/002 ,  B32B2255/28 ,  B32B2307/4026 ,  B32B2307/416 ,  B32B2439/40 ,  B32B2451/00 ,  B65D1/0207 ,  C08J2367/02 ,  C23C14/0036

摘要： The present application relates to a decoration member including a pattern layer provided on one surface of the substrate and including a convex structure or a concave structure arranged two-dimensionally, and a method for preparing the decoration member.

公开(公告)号：US20240150647A1

公开(公告)日：2024-05-09

申请号：US18282590

申请日：2022-03-11

申请人： DENKA COMPANY LIMITED

发明人： Moeko TANAKA ,  Tomohiro NOMIYAMA

IPC分类号： C09K11/77 ,  C01B21/082 ,  C09K11/02 ,  H01L33/50

CPC分类号： C09K11/77348 ,  C01B21/0826 ,  C09K11/02 ,  H01L33/502 ,  C01P2002/54 ,  C01P2004/52 ,  C01P2004/62 ,  C01P2006/60

摘要： A phosphor powder consisting of a red phosphor represented by a general formula (Srx, Ca1-x-y, Euy)AlSi(N,O)3 having the same crystal phase as that of CaAlSiN3. In the general formula, relationships of x 0 are satisfied. In a case where a cumulative 10% value of the phosphor powder in a volume-based particle size distribution curve is defined as D10, a cumulative 50% value is defined as D50, and a cumulative 90% value is defined as D90, a value of D50 is more than 20 μm and 40 μm or less, and a value of (D90−D10)/D50 is 1.12 or less.

公开(公告)号：US11970777B2

公开(公告)日：2024-04-30

申请号：US17848600

申请日：2022-06-24

申请人： Applied Materials, Inc.

发明人： Shuaidi Zhang ,  Ning Li ,  Mihaela A. Balseanu ,  Bhaskar Jyoti Bhuyan ,  Mark Saly ,  Thomas Knisley

IPC分类号： C23C16/32 ,  C01B21/082 ,  C01B32/907 ,  C23C16/30 ,  C23C16/34 ,  C23C16/36 ,  C23C16/455

CPC分类号： C23C16/45553 ,  C01B21/0828 ,  C01B32/907 ,  C23C16/308 ,  C23C16/325 ,  C23C16/345 ,  C23C16/36 ,  C23C16/45536

摘要： Methods for atomic layer deposition (ALD) or plasma enhanced atomic layer deposition (PEALD) of low-K films are described. A method of depositing a film comprises exposing a substrate to a silicon precursor having the general formulae (Ia), (Ib), (Ic), (Id), (IX), or (X); and exposing the substrate to an oxidant to react with the silicon-containing film to form one or more of a silicon oxycarbide (SiOC) film or a silicon oxycarbonitride (SiOCN) film on the substrate, the oxidant comprising one or more of a carboxylic acid, an aldehyde, a ketone, an ethenediol, an oxalic acid, a glyoxylic acid, a peroxide, an alcohol, and a glyoxal.

公开(公告)号：US11753302B2

公开(公告)日：2023-09-12

申请号：US17937766

申请日：2022-10-03

申请人： NICHIA CORPORATION

发明人： Kenichi Aoyagi ,  Takashi Kaide ,  Yuya Takahashi ,  Shoji Hosokawa

IPC分类号： C01B21/082 ,  C01F17/30 ,  C09K11/08 ,  C09K11/77

CPC分类号： C01B21/0826 ,  C01F17/30 ,  C09K11/0883 ,  C09K11/7734 ,  C09K11/77348

摘要： Provided a method of producing a β-sialon fluorescent material having excellent emission intensity. The method includes providing a first composition containing aluminum, an oxygen atom, and a europium-containing silicon nitride, heat treating the first composition, contacting the heat-treated composition and a basic substance to obtain a second composition, and contacting the second composition resulting from contacting the heat-treated composition with the basic substance and an acidic liquid medium containing an acidic substance.

公开(公告)号：US20230067267A1

公开(公告)日：2023-03-02

申请号：US17822566

申请日：2022-08-26

申请人： KING FAHD UNIVERSITY OF PETROLEUM AND MINERALS

发明人： Ahsanulhaq QURASHI ,  Ibrahim KHAN

IPC分类号： C25B11/091 ,  C01B21/082 ,  C25B1/04 ,  C25B11/00

摘要： A GaON/ZnO photoelectrode involving a nanoarchitectured photocatalytic material deposited onto a surface of a conducting substrate, and the nanoarchitectured photocatalytic material containing gallium oxynitride nanoparticles interspersed in zinc oxide nanoparticles, as well as methods of preparing the GaON/ZnO photoelectrode. A method of using the GaON/ZnO photoelectrode for solar water electrolysis is also provided.

公开(公告)号：US20230045233A1

公开(公告)日：2023-02-09

申请号：US17937766

申请日：2022-10-03

申请人： NICHIA CORPORATION

发明人： Kenichi AOYAGI ,  Takashi KAIDE ,  Yuya TAKAHASHI ,  Shoji HOSOKAWA

IPC分类号： C01B21/082 ,  C01F17/30 ,  C09K11/08 ,  C09K11/77

摘要： Provided a method of producing a β-sialon fluorescent material having excellent emission intensity. The method includes providing a first composition containing aluminum, an oxygen atom, and a europium-containing silicon nitride, heat treating the first composition, contacting the heat-treated composition and a basic substance to obtain a second composition, and contacting the second composition resulting from contacting the heat-treated composition with the basic substance and an acidic liquid medium containing an acidic substance.

公开(公告)号：US11566325B2

公开(公告)日：2023-01-31

申请号：US17120494

申请日：2020-12-14

申请人： Applied Materials, Inc.

发明人： Mei-Yee Shek ,  Bhargav S. Citla ,  Joshua Rubnitz ,  Jethro Tannos ,  Chentsau Chris Ying ,  Srinivas D. Nemani ,  Ellie Y. Yieh

IPC分类号： C23C16/36 ,  C01B21/082 ,  C23C16/44 ,  C23C16/50 ,  C09D1/00

摘要： Methods for plasma enhanced chemical vapor deposition (PECVD) of silicon carbonitride films are described. A flowable silicon carbonitride film is formed on a substrate surface by exposing the substrate surface to a precursor and a reactant, the precursor having a structure of general formula (I) or general formula (II) wherein R1, R2, R3, R4, R5, R6, R7, R8, R9, R10, R11, and R12 are independently selected from hydrogen (H), substituted or unsubstituted alkyl, substituted or unsubstituted alkoxy, substituted or unsubstituted vinyl, silane, substituted or unsubstituted amine, or halide; purging the processing chamber of the silicon precursor, and then exposing the substrate to an ammonia plasma.

公开(公告)号：US11560622B2

公开(公告)日：2023-01-24

申请号：US17298178

申请日：2019-08-09

申请人： MEIDENSHA CORPORATION

发明人： Toshinori Miura ,  Mitsuru Kekura ,  Naoto Kameda

IPC分类号： C23C16/40 ,  C01B21/082 ,  C01B33/12 ,  C08J7/06 ,  C23C16/30 ,  C23C16/455

摘要： Disclosed is a degradable film (1) in which a barrier layer (3) is disposed on a surface of a water-soluble polymer layer (2). The water-soluble polymer layer (2) is made of a water-soluble polymer such as polyvinyl alcohol or polyvinyl pyrrolidone. The barrier layer (3) is made of silicon oxide or silicon oxynitride. The barrier layer (3) is formed on the water-soluble polymer layer (2) by a CVD process with the supply of a raw material gas containing a precursor of a substance that forms the barrier layer (3), an ozone gas with an oxygen concentration of 20 vol % or higher and an unsaturated hydrocarbon gas to the water-soluble polymer layer (2).

公开(公告)号：US20230002671A1

公开(公告)日：2023-01-05

申请号：US17781528

申请日：2020-12-04

申请人： LUMILEDS LLC

发明人： Peter Josef SCHMIDT ,  Philipp-Jean STROBEL ,  Volker WEILER ,  Andreas TÜCKS

IPC分类号： C09K11/08 ,  C01B21/082 ,  H01L33/50 ,  C09K11/77

摘要： This specification discloses methods of enhancing the stability and performance of Eu2+ doped narrow band red emitting phosphors. In one embodiment the resulting phosphor compositions are characterized by crystallizing in ordered structure variants of the UCr4C4 crystal structure type and having a composition of AE1−xLi3−2yAl1+y−zSizO4−4y−zN4y+z:Eux (AE=Ca, Sr, Ba, or a combination thereof, 0

公开(公告)号：US11485906B2

公开(公告)日：2022-11-01

申请号：US17599631

申请日：2020-03-24

申请人： DENKA COMPANY LIMITED

发明人： Tomohiro Nomiyama ,  Yusuke Takeda ,  Marina Takamura ,  Tatsuya Okuzono ,  Masaru Miyazaki ,  Shintaro Watanabe

IPC分类号： C09K11/77 ,  C01B21/082 ,  C09K11/02 ,  H01L33/50

摘要： An α-sialon phosphor particle containing Eu. At least one minute recess is formed on a surface of the α-sialon phosphor particle. The α-sialon phosphor particle is preferably produced by undergoing a raw material mixing step, a heating step, a pulverizing step, and an acid treatment step.