公开(公告)号：US20250033322A1

公开(公告)日：2025-01-30

申请号：US18918514

申请日：2024-10-17

Applicant: Nelumbo Inc.

Inventor： Lance R. Brockway ,  David C. Walther ,  Josh Rafshoon

IPC: B32B7/027 ,  B32B5/02 ,  B32B9/02 ,  B32B17/02 ,  B32B33/00 ,  C04B35/04 ,  C04B35/10 ,  C04B35/453 ,  C04B38/00 ,  C08J5/12 ,  C09D1/00 ,  C09D5/08 ,  C09D201/00 ,  C23C8/02 ,  C23C8/52 ,  C23C22/06 ,  D06M11/44 ,  D06M11/83 ,  D06M23/06 ,  D06M101/06 ,  D06M101/32 ,  D06M101/34 ,  F28F19/06

Abstract: Functionalized textile materials are provided. At least a portion of a textile surface in includes a ceramic material, such as a binderless porous structured ceramic, and optionally, one or more functional layer is applied, resulting in a textile material with one or more desirable functional properties, such as hydrophilicity, hydrophobicity, flame retardancy, photocatalysis, anti-fouling, and/or deodorant properties.

公开(公告)号：US12087825B2

公开(公告)日：2024-09-10

申请号：US18243850

申请日：2023-09-08

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Yasuharu Hosaka ,  Toshimitsu Obonai ,  Yukinori Shima ,  Masami Jintyou ,  Daisuke Kurosaki ,  Takashi Hamochi ,  Junichi Koezuka ,  Kenichi Okazaki ,  Shunpei Yamazaki

IPC: H01L29/24 ,  C03C17/245 ,  C04B35/01 ,  C04B35/453 ,  C04B35/622 ,  C23C14/08 ,  C23C14/58 ,  H01L27/12 ,  H01L29/778 ,  H01L29/786

CPC classification number: H01L29/24 ,  C03C17/245 ,  C04B35/01 ,  C04B35/453 ,  C04B35/62218 ,  C23C14/08 ,  C23C14/5853 ,  H01L27/1225 ,  H01L29/7782 ,  H01L29/7786 ,  H01L29/78648 ,  H01L29/7869 ,  H01L29/78696 ,  C03C2217/23 ,  C03C2218/151 ,  C04B2235/3217 ,  C04B2235/3225 ,  C04B2235/3284 ,  C04B2235/3286 ,  C04B2235/3293 ,  C04B2235/787 ,  C04B2235/96

Abstract: A metal oxide film includes indium, M, (M is Al, Ga, Y, or Sn), and zinc and includes a region where a peak having a diffraction intensity derived from a crystal structure is observed by X-ray diffraction in the direction perpendicular to the film surface. Moreover, a plurality of crystal parts is observed in a transmission electron microscope image in the direction perpendicular to the film surface. The proportion of a region other than the crystal parts is higher than or equal to 20% and lower than or equal to 60%.

公开(公告)号：US20240172564A1

公开(公告)日：2024-05-23

申请号：US18283607

申请日：2022-03-28

Applicant: NITTO DENKO CORPORATION

Inventor： Gaku TSUBURAOKA ,  Daisuke NAKAMURA ,  Taketo ISHIKAWA ,  Hironobu MACHINAGA

IPC: H10N30/853 ,  C04B35/453 ,  C30B23/08 ,  C30B25/06 ,  C30B29/16 ,  H10N30/076

CPC classification number: H10N30/853 ,  C04B35/453 ,  C30B23/08 ,  C30B25/06 ,  C30B29/16 ,  H10N30/076 ,  C04B2235/3206 ,  C04B2235/3284 ,  C04B2235/46 ,  C04B2235/762 ,  C04B2235/95

Abstract: A piezoelectric film contains a piezoelectric material having a wurtzite-type crystal structure as a main component, and an additive element containing Kr, wherein the piezoelectric material contains a component selected from the group consisting of Zn, Al, Ga, Cd, and Si, as an electropositive element, and wherein a ratio of a content of Kr element to a content of contained elements in the piezoelectric material is in a range from 0.01 atm % to 0.05 atm %.

公开(公告)号：US11735403B2

公开(公告)日：2023-08-22

申请号：US17384867

申请日：2021-07-26

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Motoki Nakashima ,  Haruyuki Baba

IPC: H01J37/34 ,  H01L29/786 ,  H01L29/66 ,  H01L21/02 ,  H01L27/12 ,  C23C14/34 ,  C23C14/08 ,  B28B11/24 ,  B28B1/00 ,  C04B35/01 ,  C04B35/453 ,  C04B35/58 ,  H01L29/423 ,  H01L29/24 ,  G02F1/1368 ,  G02F1/1335 ,  G02F1/1333

CPC classification number: H01J37/3429 ,  B28B1/008 ,  B28B11/24 ,  C04B35/01 ,  C04B35/453 ,  C04B35/58 ,  C23C14/086 ,  C23C14/3414 ,  H01J37/3414 ,  H01J37/3417 ,  H01J37/3426 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L27/127 ,  H01L27/1225 ,  H01L29/42384 ,  H01L29/66969 ,  H01L29/7869 ,  H01L29/78648 ,  H01L29/78696 ,  C04B2235/3205 ,  C04B2235/3206 ,  C04B2235/3217 ,  C04B2235/3232 ,  C04B2235/3239 ,  C04B2235/3244 ,  C04B2235/3251 ,  C04B2235/3256 ,  C04B2235/3258 ,  C04B2235/3279 ,  C04B2235/3284 ,  C04B2235/3286 ,  C04B2235/3287 ,  C04B2235/3293 ,  C04B2235/3409 ,  C04B2235/3418 ,  C04B2235/3852 ,  C04B2235/72 ,  C04B2235/781 ,  C04B2235/785 ,  C04B2235/786 ,  C04B2235/80 ,  G02F1/1368 ,  G02F1/133345 ,  G02F1/133514 ,  G02F1/133553 ,  G02F2203/02 ,  H01L29/24

Abstract: A novel metal oxide or a novel sputtering target is provided. A sputtering target includes a conductive material and an insulating material. The insulating material includes an oxide, a nitride, or an oxynitride including an element M1. The element M1 is one or more kinds of elements selected from Al, Ga, Si, Mg, Zr, Be, and B. The conductive material includes an oxide, a nitride, or an oxynitride including indium and zinc. A metal oxide film is deposited using the sputtering target in which the conductive material and the insulating material are separated from each other.

公开(公告)号：US11616148B2

公开(公告)日：2023-03-28

申请号：US16486897

申请日：2017-09-28

Applicant: MITSUI MINING & SMELTING CO., LTD.

Inventor： Miki Miyanaga ,  Kenichi Watatani ,  Hideaki Awata

IPC: H01B1/08 ,  C04B35/01 ,  C23C14/08 ,  H01L29/786 ,  C04B35/453 ,  C23C14/34 ,  C01G15/00 ,  C01G41/00 ,  C04B35/495

Abstract: The present invention relates to an oxide sintered material that can be used suitably as a sputtering target for forming an oxide semiconductor film using a sputtering method, a method of producing the oxide sintered material, a sputtering target including the oxide sintered material, and a method of producing a semiconductor device 10 including an oxide semiconductor film 14 formed using the oxide sintered material.

公开(公告)号：US20220371964A1

公开(公告)日：2022-11-24

申请号：US17762069

申请日：2020-08-25

Applicant: Panasonic Intellectual Property Management, Co., Ltd.

Inventor： Naoki KURIZOE ,  Ryosuke SAWA ,  Natsuki SATO ,  Tatsuro YOSHIOKA

IPC: C04B35/636 ,  C04B35/453 ,  C04B35/80

Abstract: A composite member includes an inorganic matrix part made from an inorganic substance including at least one of a metal oxide or a metal oxide hydroxide and an organic fiber that is directly fixed to the inorganic matrix part without interposing an adhesive substance different from the inorganic substance making up the inorganic matrix part and is present in a dispersed state within the inorganic matrix part. The composite member has a porosity of 20% or less in a section of the inorganic matrix part.

公开(公告)号：US11434172B2

公开(公告)日：2022-09-06

申请号：US17289975

申请日：2019-10-30

Applicant: IDEMITSU KOSAN CO., LTD.

Inventor： Shigekazu Tomai ,  Yoshihiro Ueoka ,  Satoshi Katsumata ,  Kenichi Sasaki ,  Masashi Oyama

IPC: H01B1/08 ,  C04B35/453

Abstract: A sintered body, containing zinc, magnesium and oxygen as constituent elements, wherein the atomic ratio of zinc to the sum of zinc and magnesium [Zn/(Zn+Mg)] is 0.20 to 0.75, the atomic ratio of magnesium to the sum of zinc and magnesium [Mg/(Zn+Mg)] is 0.25 to 0.80, and the sintered body consists of a single crystal structure as measured by X-ray diffraction.

公开(公告)号：US20220220605A1

公开(公告)日：2022-07-14

申请号：US17563237

申请日：2021-12-28

Applicant: JX Nippon Mining & Metals Corporation

Inventor： Yuhei Kuwana ,  Kozo Osada ,  Jun Kajiyama ,  Kazutaka Murai

IPC: C23C14/34 ,  C04B35/453

Abstract: An object of the present invention is to provide an IGZO sputtering target capable of improving uniformity for at least one property selected from the number of microcracks in the structure, the number of pores in the sintered body structure, and surface roughness.
The IGZO sputtering target according to the present invention has an oxide sintered body, the oxide sintered body comprising indium (In), gallium (Ga), zinc (Zn) and unavoidable impurities, wherein, on a surface of the oxide sintered body, a lightness difference ΔL* satisfies ΔL*

公开(公告)号：US11380482B2

公开(公告)日：2022-07-05

申请号：US17042523

申请日：2019-03-15

Applicant: TDK CORPORATION

Inventor： Shota Suzuki ,  Nobuyuki Okuzawa ,  Daisuke Hirose ,  Shirou Ootsuki ,  Wakiko Sato

IPC: H01G4/12 ,  C04B35/453 ,  C04B35/495 ,  H01B3/12 ,  H01G4/30 ,  H01G4/33

Abstract: A dielectric composition including a complex oxide containing bismuth, zinc, and niobium, includes a crystal phase formed of the complex oxide and having a pyrochlore type crystal structure, and an amorphous phase. When the complex oxide is represented by a composition formula BixZnyNbzO1.75+δ, in which x, y, and z satisfy relations of x+y+z=1.00, 0.20≤y≤0.50, and 2/3≤x/z≤3/2.

公开(公告)号：US20220148768A1

公开(公告)日：2022-05-12

申请号：US17095497

申请日：2020-11-11

Applicant: RIPD Intellectual Assets Ltd

Inventor： Mirjam Cergolj ,  Sasa Rustja Kosec ,  Sodec Jozef ,  Andrej Pirih

IPC: H01C7/112 ,  C04B35/453 ,  H01C17/065

Abstract: Provided according to embodiments of the invention are varistor ceramic formulations that include zinc oxide (ZnO). In particular, varistor ceramic formulations of the invention may include dopants including an alkali metal compound, an alkaline earth compound, an oxide of boron, an oxide of aluminum, or a combination thereof. Varistor ceramic formulations may also include other metal oxides. Also provided according to embodiments of the invention are varistor ceramic materials formed by sintering a varistor ceramic formulation according to an embodiment of the invention. Further provided are varistors formed from such ceramic materials and methods of making such materials.