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    CMP COMPOSITION INCLUDING ANIONIC AND CATIONIC INHIBITORS
    1.
    发明公开
    CMP COMPOSITION INCLUDING ANIONIC AND CATIONIC INHIBITORS 审中-公开

    公开(公告)号：US20240352280A1

    公开(公告)日：2024-10-24

    申请号：US18762402

    申请日：2024-07-02

    申请人： CMC Materials LLC

    发明人： Hsin-Yen WU ,  Jin-Hao JHANG ,  Cheng-Yuan KO

    IPC分类号： C09G1/02 ,  C09K3/14 ,  C09K13/00 ,  H01L21/321 ,  H01L21/768

    CPC分类号： C09G1/02 ,  C09K3/1409 ,  C09K13/00 ,  H01L21/3212 ,  H01L21/7684

    摘要： A chemical mechanical polishing composition for polishing tungsten or molybdenum comprises, consists essentially of, or consists of a water based liquid carrier, abrasive particles dispersed in the liquid carrier, an amino acid selected from the group consisting of arginine, histidine, cysteine, lysine, and mixtures thereof, an anionic polymer or an anionic surfactant, and an optional amino acid surfactant. A method for chemical mechanical polishing a substrate including a tungsten layer or a molybdenum layer includes contacting the substrate with the above described polishing composition, moving the polishing composition relative to the substrate, and abrading the substrate to remove a portion of the tungsten layer or the molybdenum layer from the substrate and thereby polish the substrate.

    Chemical mechanical polishing slurry and use thereof
    5.
    发明授权
    Chemical mechanical polishing slurry and use thereof 有权

    公开(公告)号：US12098299B2

    公开(公告)日：2024-09-24

    申请号：US17418745

    申请日：2019-12-18

    申请人： ANJI MICROELECTRONICS (SHANGHAI) CO., LTD

    发明人： Wenting Zhou ,  Jianfen Jing ,  Ying Yao ,  Xinyuan Cai ,  Jian Ma ,  Heng Li

    IPC分类号： C09G1/02 ,  H01L21/321

    CPC分类号： C09G1/02 ,  H01L21/3212

    摘要： A chemical mechanical polishing slurry, including silicon dioxide particles, a nitrogen-containing heterocyclic compound having one or more carboxy group(s), and an ethoxylated butoxylated alky alcohol, and use of the chemical mechanical polishing slurry in the polishing silicon oxide, polysilicon, and silicon nitride. Polishing rate for silicon nitride using the polishing slurry is much higher than that for silicon oxide and polysilicon. The polishing slurry can be applied to chemical mechanical polishing in which silicon oxide/polysilicon is used as the stop layer, and can be used to control the amount of oxide and polysilicon removed from the substrate surface during polishing.

    Polishing liquid and chemical mechanical polishing method
    10.
    发明授权
    Polishing liquid and chemical mechanical polishing method 有权

    公开(公告)号：US12006446B2

    公开(公告)日：2024-06-11

    申请号：US17547176

    申请日：2021-12-09

    申请人： FUJIFILM Corporation

    发明人： Tetsuya Kamimura

    IPC分类号： C09G1/02 ,  H01L21/02 ,  H01L21/321

    CPC分类号： C09G1/02 ,  H01L21/02074 ,  H01L21/3212

    摘要： The present invention provides a polishing liquid which has a good polishing speed and reduces the occurrence of dishing on a surface to be polished of an object to be polished having a cobalt-containing film after polishing in a case where the polishing liquid is applied to CMP of the object to be polished, and makes it possible to manufacture a semiconductor product having excellent reliability. The present invention also provides a chemical mechanical polishing method using the polishing liquid. The polishing liquid of an embodiment of the present invention is a polishing liquid used for chemical mechanical polishing of an object to be polished having a cobalt-containing film, the polishing liquid including colloidal silica, one or more specific compounds selected from the group consisting of glycine, alanine, sarcosine, and iminodiacetic acid, a passivation film forming agent, hydrogen peroxide, sodium, and ammonia, in which a mass ratio of a content of ammonia to a content of sodium is 1×103 to 1×106, and a pH is 5.5 to 8.0.