公开(公告)号：US12129418B2

公开(公告)日：2024-10-29

申请号：US17743080

申请日：2022-05-12

申请人： ENTEGRIS, INC.

发明人： Hsing-Chen Wu ,  Min-Chieh Yang ,  Ming-Chi Liao ,  Wen Hua Tai ,  Wei-Ling Lan

IPC分类号： C09K13/06 ,  C09K13/00 ,  C09K13/04 ,  H01L21/02 ,  H01L21/306 ,  H01L21/311 ,  H01L21/3213

CPC分类号： C09K13/06 ,  C09K13/00 ,  C09K13/04 ,  H01L21/0217 ,  H01L21/30604 ,  H01L21/311 ,  H01L21/31105 ,  H01L21/32134

摘要： The present invention relates to compositions and methods for selectively etching silicon nitride in the presence of silicon oxide, polysilicon and/or metal silicides at a high etch rate and with high selectivity. Additives are described that can be used at various dissolved silica loading windows to provide and maintain the high selective etch rate and selectivity.

公开(公告)号：US12116520B2

公开(公告)日：2024-10-15

申请号：US17346641

申请日：2021-06-14

申请人： SK Innovation Co., Ltd. ,  SK Inc.

发明人： Cheol Woo Kim ,  Min Kyung Seon ,  Yu Na Shim ,  Jae Hoon Kwak ,  Young Bom Kim ,  Jong Ho Lee ,  Jin Kyung Jo

IPC分类号： C09K13/06 ,  C07F7/18 ,  H01L21/4757 ,  H01L21/311

CPC分类号： C09K13/06 ,  C07F7/1804 ,  H01L21/47573 ,  H01L21/31111

摘要： An etching composition contains phosphoric acid, phosphoric anhydride, a compound represented by the following Formula 1, and a silane compound comprising at least one silicon (Si) atom, excluding the compound represented by Formula 1:




wherein, in Formula 1, A is an n-valent radical, where n is an integer of 1 to 6, L is a direct bond or hydrocarbylene, Y is selected from NR1, O, PR2 and S, where R1 to R2 are independently hydrogen, halogen, a substituted or unsubstituted hydrocarbyl group, or non-hydrocarbyl group, X and Z are independently selected from N, O, P and S, and Ra to Rc are independently an unshared electron pair, hydrogen, or a substituted or unsubstituted hydrocarbyl group.

公开(公告)号：US12110436B2

公开(公告)日：2024-10-08

申请号：US17756223

申请日：2020-09-30

申请人： Versum Materials US, LLC

发明人： Chung-Yi Chang ,  Wen Dar Liu ,  Yi-Chia Lee

IPC分类号： C09K13/08 ,  C09K13/06 ,  H01L21/3213

CPC分类号： C09K13/08 ,  C09K13/06 ,  H01L21/32134

摘要： The disclosed and claimed subject matter relates to wet etchants exhibiting high copper and cobalt etching rates where the etching rate ratio between the two metals can be varied. The wet etchants have a composition comprising a formulation consisting of: at least one alkanolamine having at least two carbon atoms, at least one amino substituent and at least one hydroxyl substituent with the amino and hydroxyl substituents attached to two different carbon atoms; at least one pH adjuster for adjusting the pH of the formulation to between approximately 9 and approximately 12; at least one chelating agent; and water.

公开(公告)号：US20240309272A1

公开(公告)日：2024-09-19

申请号：US18607272

申请日：2024-03-15

申请人： ENTEGRIS, INC.

发明人： Juhee Yeo ,  SeongJin Hong ,  WonLae Kim ,  Younghun Park ,  Yeonhui Kang ,  Jinwook Jeong

IPC分类号： C09K13/06

CPC分类号： C09K13/06

摘要： Compositions and methods for selectively etching silicon nitride relative to polysilicon, silicon oxide materials and/or silicide materials from a microelectronic device.

公开(公告)号：US12091601B2

公开(公告)日：2024-09-17

申请号：US17987004

申请日：2022-11-15

申请人： FLUID ENERGY GROUP LTD.

发明人： Clay Purdy ,  Markus Weissenberger ,  Karl W. Dawson ,  Kyle G. Wynnyk

IPC分类号： C09K13/08 ,  C09K13/06 ,  H01L21/306

CPC分类号： C09K13/08 ,  C09K13/06 ,  H01L21/30604

摘要： A process for controlling the heat generated during the manufacture an inhibited hydrofluoric acid aqueous composition comprising:



hydrofluoric acid in solution;
a weak base; and
an alkanolamine;

said process comprising the steps of:

providing a pre-determined amount of weak base;
adding a pre-determined amount of said hydrofluoric acid to said weak base and obtaining a solution;
adding said alkanolamine to the resulting solution of hydrofluoric acid and weak base;
mixing until all components are dissolved;

wherein said alkanolamine and hydrofluoric acid are present in a molar ratio of at least 1:1.

公开(公告)号：US20240279548A1

公开(公告)日：2024-08-22

申请号：US18569249

申请日：2022-03-30

申请人： RASA INDUSTRIES, LTD.

发明人： Sho NAGAO ,  Tomohiro INOUE ,  Takao MITSUI ,  Nobuhiro OSHITA ,  Reiji UCHIDA

IPC分类号： C09K13/06

CPC分类号： C09K13/06

摘要： Provided is an etching solution composition that can have both a higher etch selectivity of silicon nitride and a reduction in the deposition of silica on the surface of silicon oxide. An inorganic acid-based etching solution composition for selectively etching away silicon nitride from a semiconductor containing silicon nitride and silicon oxide, the etching solution composition comprising: (a) an etch inhibitor that reduces etching of silicon oxide; and (b) a deposition inhibitor that reduces deposition of silica on a surface of silicon oxide.

公开(公告)号：US20240254391A1

公开(公告)日：2024-08-01

申请号：US18430567

申请日：2024-02-01

申请人： ENTEGRIS, INC.

发明人： Hunter Patrick Hickox ,  Atanu K. Das ,  Chia-Jung Hsu ,  Steven A. Lippy

IPC分类号： C09K13/06 ,  C23F1/26

CPC分类号： C09K13/06 ,  C23F1/26

摘要： Wet etch compositions and related methods are provided herein. A wet etch composition for molybdenum, may include phosphoric acid, acetic acid, nitric acid, and an additive for reducing an oxidation rate of a MoOx layer. The additive may be present in an amount of 0.01% to 5% by weight based on a total weight of the wet etch composition.

公开(公告)号：US11920073B2

公开(公告)日：2024-03-05

申请号：US17486963

申请日：2021-09-28

申请人： PHICHEM CORPORATION

发明人： Xiaoyi Gao ,  Hangjian Hu

IPC分类号： C09K13/06 ,  C09K13/00 ,  C09K13/04 ,  C09K13/08 ,  C09K13/10 ,  C23F1/16 ,  C23F1/44 ,  H01L21/3213

CPC分类号： C09K13/06 ,  C09K13/00 ,  C09K13/04 ,  C09K13/08 ,  C09K13/10 ,  C23F1/16 ,  C23F1/44 ,  H01L21/32134

摘要： The present disclosure discloses an etching composition. The etching composition includes: a component A: oxidizing agent 1-30 wt %; a component B: inorganic acid 0.5-20 wt %; a component C: organic acid 0-15 wt %; a component D: chelating agent 0.01-15 wt %; a component E: ionic compound and/or other inorganic acids except the inorganic acid in the component B 0-0.1 wt %; and deionized water.

公开(公告)号：US20240059968A1

公开(公告)日：2024-02-22

申请号：US18234499

申请日：2023-08-16

申请人： Fujifilm Electronic Materials U.S.A., Inc.

发明人： Dmitry Dinega ,  Thomas Dory

IPC分类号： C09K13/06

CPC分类号： C09K13/06

摘要： The present disclosure is directed to etching compositions that are useful for, e.g., selectively removing silicon from a semiconductor substrate as an intermediate step in a multistep semiconductor manufacturing process.

公开(公告)号：US11807792B2

公开(公告)日：2023-11-07

申请号：US17181352

申请日：2021-02-22

申请人： TOKYO OHKA KOGYO CO., LTD.

发明人： Takahiro Eto ,  Lihong Liu

IPC分类号： C09K13/04 ,  H01L21/306 ,  C09K13/06 ,  H01L21/3213 ,  C09K13/08 ,  H01L21/311

CPC分类号： C09K13/04 ,  C09K13/06 ,  C09K13/08 ,  H01L21/30604 ,  H01L21/31111 ,  H01L21/32134

摘要： A semiconductor processing liquid including hydrofluoric acid, and an organic solvent, in which the organic solvent contains a compound represented by the formula below in which X1 is a single bond or an alkylene group having 1 to 6 carbon atoms, in which an ether bond may be interposed, Y10 is one of —O—, —(C═O)—, —O—(C═O)—, and —(C═O)—O—, Y20 is one of —(C═O)—, —O—(C═O)—, and —(C═O)—O—, and Y11 and Y21 are each independently a single bond or an alkylene group having 1 to 6 carbon atoms in which an ether bond may be interposed, provided that, X1, Y11, and Y21 do not contain hydroxyl groups in structures thereof, and when X1 is a single bond, Y10 is not —O—)

H3C—Y11—Y10—X1—Y20—Y21—CH3  (1).