摘要:
Bonding wire for semiconductor devices contains one or more of Be, B, P, Ca, Y, La, and Ce in a total of 0.031 at % to obtain a 0.180 at %, further contains one or more of In, Ga, and Cd in a total of 0.05 at % to 5.00 at %, and has a balance of Ag and unavoidable impurities. Due to this, it is possible to obtain a bonding wire for semiconductor devices sufficiently forming an intermetallic compound layer at a ball bond interface to secure the bond strength of the ball bond, not causing neck damage even in a low loop, having a good leaning characteristic, and having a good FAB shape.
摘要:
The present invention provides a bonding wire which can satisfy bonding reliability, spring performance, and chip damage performance required in high-density packaging. A bonding wire contains one or more of In, Ga, and Cd for a total of 0.05 to 5 at %, and a balance being made up of Ag and incidental impurities.
摘要:
An electrical contact material consists of Ag in which a metallic oxide is produced and dispersed through an internal oxidation and containing as metallic elements Cd, Mn and Al. With this contact material of this composition, there can be shown a high anti-welding property and a stably low contact resistance.
摘要:
Internal oxidized Ag-SnO system alloy electrical contact materials having a moderate initial contact resistance and having no depletion layer is disclosed. The alloy is internal oxidized by having it sandwiched between pure silver thin layers, and is cut horizontally right in two, simultaneously removing the depletion layer from the internally oxidized alloy.
摘要:
A method of making a heat-recoverable article in which an alloy comprising an intermetallic compound, which on cooling transforms into a banded martensite by shear with or without working, deformed after appropriate heat treatment so that on reheating it at least partly resumes its original shape. It is preferred to use a copperbase alloy which transforms into a martensite of pseudocubic symmetry.
摘要:
An electrical contact material obtained through internally oxidizing a silver alloy which is the solid solution with 3 to 11 weight percent of tin and other solute metal element(s). The alloy material is improved of its contact resistance by diffusing into the silver matrix 0.1 to 5 weight percent of metals having a decomposition and sublimation temperature lower than the melting point of silver and then by internally oxidizing the material.
摘要:
Process for the preparation of a composite electrical contact material consisting of an alloy composed of 84 to 90 weight percent of silver, 1.0 to 4.0 weight percent of the components consisting of at least two of zinc, tin or antimony, and less than 0.5 weight percent of the intermetallic compound of one of the group 2A elements of the Periodic Table with nickel or cobalt, the balance being cadmium, said alloy being formed into a strip or contact form and subjected to an internal oxidation at a temperature of 700* to 750*C.
摘要:
The composite comprises a silver matrix having grain boundaries and metal oxide grains enriched at said grain boundaries of said silver matrix. An alloy is provided, which comprises silver, a second metallic component, and at least two alloying metals selected from the class consisting of calcium, antimony, magnesium, beryllium, aluminum, tin, manganese, and zirconium. Said second metallic component and said alloying metals are oxidized in said alloy to form said composite.