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公开(公告)号:US20250067915A1
公开(公告)日:2025-02-27
申请号:US18940077
申请日:2024-11-07
Applicant: NALUX CO., LTD.
Inventor: Masanori ENDO
Abstract: A thin film type filter for attenuating light comprising a multilayer film including a layer or layers of iron oxide and a layer or layers of other material having refractive index lower than refractive index of iron oxide, wherein the multilayer is made up of alternate layers of iron oxide and of other material, a ratio of the number of iron atoms to the number of oxygen atoms in each layer of iron oxide is equal to or greater than 4/3 and less than 3/2 and an attenuation coefficient of each layer of iron oxide is equal to or greater than 0.1 for light of wavelength of a certain wavelength in a wavelength from 700 nanometers to 2000 nanometers.
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公开(公告)号:US12237153B2
公开(公告)日:2025-02-25
申请号:US17978778
申请日:2022-11-01
Inventor: Sung min Lee , Yoon Suk Oh
IPC: H01J37/32 , C23C14/06 , C23C14/08 , C23C14/24 , C23C14/26 , C23C14/30 , C23C14/50 , H01J37/147 , H01J37/06
Abstract: The present invention relates to a method of forming a plasma resistant oxyfluoride coating layer, including: mounting a substrate on a substrate holder provided in a chamber; causing an electron beam scanned from an electron gun to be incident on an oxide evaporation source accommodated in a first crucible, and heating, melting, and vaporizing the oxide evaporation source as the electron beam is incident on the oxide evaporation source; vaporizing a fluoride accommodated in a second crucible; and advancing an evaporation gas generated from the oxide evaporation source and a fluorine-containing gas generated from the fluoride toward the substrate, and reacting the evaporation gas generated from the oxide evaporation source and the fluorine-containing gas generated from the fluoride to deposit an oxyfluoride on the substrate. According to the present invention, it is possible to form a dense and stable oxyfluoride coating layer having excellent plasma resistance, suppressed generation of contaminant particles, and no cracks.
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公开(公告)号:US12228759B2
公开(公告)日:2025-02-18
申请号:US16965190
申请日:2018-08-06
Applicant: Huawei Technologies Co., Ltd.
Inventor: Peiling Lin , Ze Yuan , Guoping Wu , Xin Li , Meng Li , Xiaojun Dai , Jingjing Nie
IPC: G02B5/28 , C23C14/08 , C23C14/10 , C23C14/34 , C23C14/50 , C23C14/54 , H01J37/32 , H01J37/34 , H04B1/3827
Abstract: An enclosure of a mobile terminal and a sputter coating apparatus for making the same are provided. The enclosure includes a substrate and a composite film layer coated onto the substrate. The composite film layer has a thickness changing along a first direction. A difference in thickness between any two regions arranged along the first direction of the composite film layer is less than or equal to 350 nanometers. The enclosure has a spatially varying color corresponding to a wavelength between 400 nanometers and 760 nanometers.
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公开(公告)号:US12196109B2
公开(公告)日:2025-01-14
申请号:US18370648
申请日:2023-09-20
Applicant: RTX Corporation
Inventor: Brian T. Hazel , Elisa M. Zaleski , Kaylan M. Wessels
IPC: B32B15/04 , B32B18/00 , C23C4/11 , C23C4/134 , C23C4/18 , C23C14/06 , C23C14/08 , C23C14/22 , C23C14/28 , C23C14/30 , C23C14/34 , C23C16/40 , C23C16/455 , C23C28/00 , C23C28/04 , C23C30/00 , F01D5/28 , F01D25/00 , F01D25/08
Abstract: A calcium-magnesium-alumino-silicate (CMAS)-reactive thermal barrier coating includes a ceramic coating and a CMAS-reactive overlay coating, wherein the CMAS-reactive overlay coating conforms to a surface of the ceramic coating and comprises a compound that forms a stable high melting point crystalline precipitate when reacted with molten CMAS at a rate that is competitive with CMAS infiltration kinetics into the thermal barrier coating. The ceramic coating phase is stable with the CMAS-reactive overlay coating.
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公开(公告)号:US20250012791A1
公开(公告)日:2025-01-09
申请号:US18348245
申请日:2023-07-06
Applicant: National Chung Hsing University
Inventor: Shu-Ping Lin , Man-Cheng Sun , Lester Uy Vinzons , Yu-Ting Wei
Abstract: A nanostructural sensing substrate includes indium tin oxide (ITO) film coated upstanding silicon nanowires (ITO/USNWs). The ITO/USNWs are fabricated by coating an ITO film on USNWs, the density of which has been reduced using a facile Ag-assisted chemical etching method. Furthermore, the bioreceptor modified ITO/USNWs are developed to serve as the sensing substrate of the EGFETs device for label-free diagnosis of biomarker related diseases, such as Alzheimer's disease (AD), acute myocardial infarction, coronary artery disease (CAD), hepatic encephalopathy, lung fibrosis, Cushing's syndrome and cancers. The ITO-coated-USNWs are also used in nano-featured cell based biosensors (CBB) for electrically quantitative evaluation of drug release.
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公开(公告)号:US20250003056A1
公开(公告)日:2025-01-02
申请号:US18710273
申请日:2022-11-08
Applicant: CORNING INCORPORATED
Inventor: Paulo Clovis Dainese, Jr. , Wei Jiang , Robert George Manley , Bin Zhu
Abstract: A composite includes a substrate and a target material, wherein the target material includes indium oxide (In2O3), tin oxide (SnO2), and gallium oxide (Ga2O3), and a method for making the same. The method includes positioning the substrate and a target in a chamber and applying radio frequency (RF) power to the chamber to sputter ions of target material from the target onto the substrate.
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公开(公告)号:US12157944B2
公开(公告)日:2024-12-03
申请号:US18242599
申请日:2023-09-06
Applicant: MacDermid Enthone Inc.
Inventor: Richard W. Hurtubise , Eric Yakobson , Shaopeng Sun , Taylor L Wilkins , Elie H. Najjar , Wenbo Shao
Abstract: A method of forming a diffusion barrier layer on a dielectric or semiconductor substrate by a wet process. The method includes the steps of treating the dielectric or semiconductor substrate with an aqueous pretreatment solution comprising one or more adsorption promoting ingredients capable of preparing the substrate for deposition of the diffusion barrier layer thereon; and contacting the treated dielectric or semiconductor substrate with a deposition solution comprising manganese compounds and an inorganic pH buffer (optionally, with one or more doping metals) to the diffusion barrier layer thereon, wherein the diffusion barrier layer comprises manganese oxide. Also included is a two-part kit for treating a dielectric or semiconductor substrate to form a diffusion barrier layer thereon.
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公开(公告)号:US12157941B2
公开(公告)日:2024-12-03
申请号:US18559484
申请日:2022-03-09
Applicant: 3M INNOVATIVE PROPERTIES COMPANY
Inventor: Sean M. Sweetnam , Stephen P. Maki , Timothy J. Hebrink , Daniel M. Pierpont , Mark D. Weigel , David J. Rowe , Brandon R. Pietz , Christopher S. Lyons , Kevin D. Hagen
Abstract: Barrier films including a (co)polymeric substrate, at least one dyad on the substrate, each dyad made of a (co)polymer layer and an oxide layer overlaying the (co)polymer layer, and an outer (co)polymer layer overlaying the dyads. Optionally, at least one outer oxide layer overlays the outer (co)polymer layer. The barrier films transmit visible light and transmits, at an incident light angle of at least one of 0°, 30°, 45°, 60°, or 75°, at most 70 percent of incident ultraviolet light at a wavelength range from at least 100 nanometers to 400 nanometers or in a wavelength range from at least 100 nm to 350 nm. The barrier films exhibit atomic oxygen degradation of less than 1×10−20 mg/atom. The barrier films may be applied to decorative objects or electronic devices, (e.g., light receiving or emitting devices, in a satellite or aircraft. Methods of making the barrier films also are disclosed.
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公开(公告)号:US20240393516A1
公开(公告)日:2024-11-28
申请号:US18792711
申请日:2024-08-02
Applicant: VIAVI Solutions Inc.
Inventor: Karen Denise HENDRIX , Richard A. BRADLEY , Marius GRIGONIS , Georg J. OCKENFUSS
IPC: G02B5/28 , C23C14/08 , C23C14/18 , C23C14/54 , C23C14/58 , G01J5/0802 , G02B1/11 , G02B1/115 , G02B5/20 , G06V40/20 , H04N5/33 , H04N13/254
Abstract: An optical filter having a passband at least partially overlapping with a wavelength range of 800 nm to 1100 nm is provided. The optical filter includes a filter stack formed of hydrogenated silicon layers and lower-refractive index layers stacked in alternation. The hydrogenated silicon layers each have a refractive index of greater than 3 over the wavelength range of 800 nm to 1100 nm and an extinction coefficient of less than 0.0005 over the wavelength range of 800 nm to 1100 nm.
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公开(公告)号:US20240376615A1
公开(公告)日:2024-11-14
申请号:US18781675
申请日:2024-07-23
Applicant: SUNGREENH2 PTE. LTD.
Inventor: Saeid Masudy Panah
IPC: C25B11/036 , B22F1/105 , B22F3/10 , B22F3/16 , B22F9/02 , B22F9/04 , C23C14/02 , C23C14/06 , C23C14/08 , C23C24/10 , C25B9/75 , C25B9/77 , C25B11/032 , C25B11/063 , C25B11/081 , C25B11/089 , C25D3/56 , C25D5/18
Abstract: An electrolyser system and method of electrode manufacture. The system for electrolyzing a solution comprises: a first vessel in communication with at least one electrolyser stack comprising: at least one bipolar electrode comprising: a bipolar plate; a porous transport layer; and a catalyst comprising a binder; the bipolar plate, the porous transport layer, and the catalyst fused together into a single component; at least one separator; and a second vessel in communication with the at least one electrolyser stack. A method for manufacturing a catalyst comprising a binder, the method comprising: contacting a primary element with a secondary element to form a binder material; contacting the binder material with a primary catalyst material to form a binder material and primary catalyst material mixture; and sintering the binder material and primary catalyst material mixture. A composition comprising: a primary catalyst; and a binder.
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