THIN FILM TYPE FILTER FOR ATTENUATING LIGHT AND METHOD OF PRODUCING THE SAME

    公开(公告)号:US20250067915A1

    公开(公告)日:2025-02-27

    申请号:US18940077

    申请日:2024-11-07

    Inventor: Masanori ENDO

    Abstract: A thin film type filter for attenuating light comprising a multilayer film including a layer or layers of iron oxide and a layer or layers of other material having refractive index lower than refractive index of iron oxide, wherein the multilayer is made up of alternate layers of iron oxide and of other material, a ratio of the number of iron atoms to the number of oxygen atoms in each layer of iron oxide is equal to or greater than 4/3 and less than 3/2 and an attenuation coefficient of each layer of iron oxide is equal to or greater than 0.1 for light of wavelength of a certain wavelength in a wavelength from 700 nanometers to 2000 nanometers.

    Forming method of plasma resistant oxyfluoride coating layer

    公开(公告)号:US12237153B2

    公开(公告)日:2025-02-25

    申请号:US17978778

    申请日:2022-11-01

    Abstract: The present invention relates to a method of forming a plasma resistant oxyfluoride coating layer, including: mounting a substrate on a substrate holder provided in a chamber; causing an electron beam scanned from an electron gun to be incident on an oxide evaporation source accommodated in a first crucible, and heating, melting, and vaporizing the oxide evaporation source as the electron beam is incident on the oxide evaporation source; vaporizing a fluoride accommodated in a second crucible; and advancing an evaporation gas generated from the oxide evaporation source and a fluorine-containing gas generated from the fluoride toward the substrate, and reacting the evaporation gas generated from the oxide evaporation source and the fluorine-containing gas generated from the fluoride to deposit an oxyfluoride on the substrate. According to the present invention, it is possible to form a dense and stable oxyfluoride coating layer having excellent plasma resistance, suppressed generation of contaminant particles, and no cracks.

    Method and wet chemical compositions for diffusion barrier formation

    公开(公告)号:US12157944B2

    公开(公告)日:2024-12-03

    申请号:US18242599

    申请日:2023-09-06

    Abstract: A method of forming a diffusion barrier layer on a dielectric or semiconductor substrate by a wet process. The method includes the steps of treating the dielectric or semiconductor substrate with an aqueous pretreatment solution comprising one or more adsorption promoting ingredients capable of preparing the substrate for deposition of the diffusion barrier layer thereon; and contacting the treated dielectric or semiconductor substrate with a deposition solution comprising manganese compounds and an inorganic pH buffer (optionally, with one or more doping metals) to the diffusion barrier layer thereon, wherein the diffusion barrier layer comprises manganese oxide. Also included is a two-part kit for treating a dielectric or semiconductor substrate to form a diffusion barrier layer thereon.

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